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    MOSFET 600V 10A IC Search Results

    MOSFET 600V 10A IC Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    RJK6012DPE-00#J3 Renesas Electronics Corporation Nch Single Power Mosfet 600V 10A 920Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    RJL6012DPE-00#J3 Renesas Electronics Corporation Nch Single Power Mosfet 600V 10A 1100Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    RJK6012DPP-E0#T2 Renesas Electronics Corporation Nch Single Power Mosfet 600V 10A 920Mohm To-220Fp Visit Renesas Electronics Corporation
    RJK6012DPP-A0#T2 Renesas Electronics Corporation 600V - 10A - MOSFET High Speed Power Switching, TO-220FPA, /Tube Visit Renesas Electronics Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 600V 10A IC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    10A600V

    Abstract: No abstract text available
    Text: TAK CHEONG N-Channel Power MOSFET 10A, 600V, 0.75Ω 1 GENERAL DESCRIPTION The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state


    Original     		PDF DB-100 10A600V

    Untitled

    Abstract: No abstract text available
    Text: Product Summary ICE10N60FP N-Channel Enhancement Mode MOSFET TA = 25°C 10A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.28Ω Typ Qg VDS = 480V 41nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE10N60FP 250uA O-220 100us 0E-06 0E-02 0E-04 0E-00

    Untitled

    Abstract: No abstract text available
    Text: ICE10N60 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 10A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.28Ω Typ Qg VDS = 480V 41nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE10N60 250uA O-220 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 0E-00

    playstation 2 power supply

    Abstract: playstation 1 power supply SONY PLAYSTATION 3 sony playstation 3 power supply sony playstation 1 power supply sony playstation 2 power supply PLAYSTATION 3 power supply sony playstation 2 graphics synthesizer IBM GEKKO
    Text: Discretes and MultiMarket ICs DMI – BL Power 07/08/2002 DMI – BL Power Sony, Playstation, Nintendo, Gamecube, Microsoft and Xbox are trademarks and property of their respective owners. Semiconductors ASPD / page:2 DMI – BL Power Technical • CPU: Sony "Emotion Engine”, 128 bit, 300 MHz


    Original     		PDF OT223 BSH105 BSH103 PHP225 PHC21025 playstation 2 power supply playstation 1 power supply SONY PLAYSTATION 3 sony playstation 3 power supply sony playstation 1 power supply sony playstation 2 power supply PLAYSTATION 3 power supply sony playstation 2 graphics synthesizer IBM GEKKO

    Untitled

    Abstract: No abstract text available
    Text: ICE20N170 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 20A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.17Ω Typ Qg VDS = 480V 62nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE20N170 250uA O-220 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 0E-00

    Untitled

    Abstract: No abstract text available
    Text: ICE20N170U Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 20A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.17Ω Typ Qg VDS = 480V 62nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE20N170U 250uA O-262 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 0E-00

    Untitled

    Abstract: No abstract text available
    Text: APTMC120HR11CT3G Phase Leg & Dual Common Emitter Power Module SiC MOSFET Q1, Q2 : VCES = 1200V ; RDSon = 98mΩ max @ Tj = 25°C Trench & Field Stop IGBT3 (Q3, Q4): VCES = 600V ; IC = 20A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies


    Original     		PDF APTMC120HR11CT3G

    Untitled

    Abstract: No abstract text available
    Text: ICE20N170FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 20A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.17Ω Typ Qg VDS = 480V 62nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE20N170FP 250uA O-220 0E-06 0E-04 0E-02 0E-00

    Untitled

    Abstract: No abstract text available
    Text: ICE20N170B Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 20A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.17Ω Typ Qg VDS = 480V 62nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE20N170B 250uA O-263 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01

    Untitled

    Abstract: No abstract text available
    Text: ICE20N170FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 20A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.17Ω Typ Qg VDS = 480V 62nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE20N170FP 250uA O-220 100us 0E-06 0E-04 0E-02 0E-00

    "VDSS 800V" 40A mosfet

    Abstract: No abstract text available
    Text: APTMC120HR11CT3G Phase Leg & Dual Common Emitter Power Module SiC MOSFET Q1, Q2 : VCES = 1200V ; RDSon = 110mΩ max @ Tj = 25°C Trench & Field Stop IGBT3 (Q3, Q4): VCES = 600V ; IC = 20A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies


    Original     		PDF APTMC120HR11CT3G "VDSS 800V" 40A mosfet

    Untitled

    Abstract: No abstract text available
    Text: APTMC120HRM40CT3G Phase Leg & Dual Common Emitter Power Module SiC MOSFET Q1, Q2 : VCES = 1200V ; RDSon = 34mΩ max @ Tj = 25°C Trench & Field Stop IGBT3 (Q3, Q4): VCES = 600V ; IC = 50A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies


    Original     		PDF APTMC120HRM40CT3G

    Untitled

    Abstract: No abstract text available
    Text: PD - 95968 IRGP50B60PDPbF SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies


    Original     		PDF IRGP50B60PDPbF IRFPE30 O-247AC

    mosfet 10a 600v

    Abstract: td 1410 IRGP50B60PD 600V 25A Ultrafast Diode irfp250 DRIVER P channel 50A IGBT 30ETH06 IRFP250 50AIF
    Text: PD - 94624B IRGP50B60PD SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies


    Original     		PDF 94624B IRGP50B60PD O-247AC mosfet 10a 600v td 1410 IRGP50B60PD 600V 25A Ultrafast Diode irfp250 DRIVER P channel 50A IGBT 30ETH06 IRFP250 50AIF

    IRGP50B60PDPBF

    Abstract: 035H 30ETH06 IRFP250 IRFPE30 210uH
    Text: PD - 95968 IRGP50B60PDPbF SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies


    Original     		PDF IRGP50B60PDPbF IRFPE30 O-247AC IRGP50B60PDPBF 035H 30ETH06 IRFP250 IRFPE30 210uH

    035H

    Abstract: 30ETH06 IRFP250 IRFPE30 Ice-100
    Text: PD - 95968 IRGP50B60PDPbF SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies


    Original     		PDF IRGP50B60PDPbF IRFPE30 O-247AC 035H 30ETH06 IRFP250 IRFPE30 Ice-100

    bridge rectifier 24V AC to 24v dc

    Abstract: 1N5408 smd diodes GSIB1560
    Text: Switch Mode Power Supply Table of Contents ADAPTOR, Buck Capacitance. 3 ADAPTOR, EMI Filtering. 4


    Original     		PDF 250ns; DO-204AL DO-41) DO-220AA V-540V; V-440V bridge rectifier 24V AC to 24v dc 1N5408 smd diodes GSIB1560

    ETD4916A

    Abstract: STK2N50 ferrite core geometry diode BYW 200 500watts amplifier pcb layout 3kw pfc using l4981 application note r4849-a 0.5mh l4981 AN628 400W pwm smps schematic Philips Electrolytic Capacitor 824k 400v
    Text: APPLICATION NOTE A 500W HIGH POWER FACTOR WITH THE L4981A CONTINUOUS MODE IC The widespread use of passive AC/DC off-line converters causes low power factor and high line current harmonic distortion. To reduce these phenomena and to comply with relevant regulatory


    Original     		PDF L4981A L4981A ETD4916A STK2N50 ferrite core geometry diode BYW 200 500watts amplifier pcb layout 3kw pfc using l4981 application note r4849-a 0.5mh l4981 AN628 400W pwm smps schematic Philips Electrolytic Capacitor 824k 400v

    30ETH06

    Abstract: IRFP250 IRGP50B60PD
    Text: PD - 94624A IRGP50B60PD SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies


    Original     		PDF 4624A IRGP50B60PD O-247AC 30ETH06 IRFP250 IRGP50B60PD

    LSI SAS 2208

    Abstract: li shin smps 500W P channel 600v 20a IGBT optocoupler NAND THREE PHASE SOLID STATE RELAY WITH ZVS smps 500w half bridge smps igbt h-bridge igbt pwm schematics circuit 600 watt smps schematic
    Text: 1 Discrete Features Optoelectronics • Independent current limiting and shutdown controls · VTT output sources and sinks up to 3A · Tracking VDDQ /2 to within ±2% · VREF output follows VTT within ±40mV · Comprehensive New Product List · New Product Highlights


    Original     		PDF FAN5236 900mV 28-lead Power247TM, LSI SAS 2208 li shin smps 500W P channel 600v 20a IGBT optocoupler NAND THREE PHASE SOLID STATE RELAY WITH ZVS smps 500w half bridge smps igbt h-bridge igbt pwm schematics circuit 600 watt smps schematic

    Philips Electrolytic Capacitor 824k 400v

    Abstract: ETD4916A ETD 39 x 20 x 13 siemens zener diode 100V DO-35 ferrite core geometry 3kw smps pfc STK2N50 500watts amplifier pcb layout r4849-a 0.5mh R4849-A
    Text: AN827 APPLICATION NOTE A 500W HIGH POWER FACTOR WITH THE L4981A CONTINUOUS MODE IC The widespread use of passive AC/DC off-line converters causes low power factor and high line current harmonic distortion. To reduce these phenomena and to comply with relevant regulatory agency requirements , designers are employing active power factor correction in their off-line SMPS applications. This


    Original     		PDF AN827 L4981A L4981A Philips Electrolytic Capacitor 824k 400v ETD4916A ETD 39 x 20 x 13 siemens zener diode 100V DO-35 ferrite core geometry 3kw smps pfc STK2N50 500watts amplifier pcb layout r4849-a 0.5mh R4849-A

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    sono2

    Abstract: mosfet 600V 10A ic
    Text: MITSUBISHI Neh POWER MOSFET FK10KM-12 HIGH-SPEED SWITCHING USE FK1OKM-12 • Voss . 600V • rDS ON (MAX) .1.18Í2 • Id . 10A


    OCR Scan     		PDF FK10KM-12 FK1OKM-12 150ns UJ10l/l sono2 mosfet 600V 10A ic

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FK10SM-12 HIGH-SPEED SWITCHING USE FK1OSM-12 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 <t>3.2 5.45 0.6 4 Q w r ' V D S S . 600V rDS ON (MAX) 1.18Í2 ID . 10A Integrated Fast Recovery Diode (M A X .)


    OCR Scan     		PDF FK10SM-12 FK1OSM-12 150ns D-250V 57KH23 571Q1