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    MOSFET 5130 Search Results

    MOSFET 5130 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 5130 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    wiring diagram for ge cr2943

    Abstract: ceramic capacitor 33pf GE 4N35 4n35 optoisolator IRCZ44 IRF540 MIC5010 MIC5011 MIC5012 MIC5013
    Text: MIC5013 Micrel MIC5013 Protected High- or Low-Side MOSFET Driver General Description Features The MIC5013 is an 8-pin MOSFET driver with over-current shutdown and a fault flag. It is designed to drive the gate of an N-channel power MOSFET above the supply rail highside power switch applications. The MIC5013 is compatible


    Original     		PDF MIC5013 MIC5013 MIC5010 125pF wiring diagram for ge cr2943 ceramic capacitor 33pf GE 4N35 4n35 optoisolator IRCZ44 IRF540 MIC5011 MIC5012

    PHILIPS MOSFET MARKING

    Abstract: passive loopthrough n channel depletion MOSFET mosfet 5130 Q 817 mosfet K 2865 115102 4466 8 pin mosfet pin voltage marking code 10 sot23 BF1107
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BF1107 Silicon N-channel single gate MOSFET Preliminary specification File under Discrete Semiconductors, SC07 1998 Apr 07 Philips Semiconductors Preliminary specification Silicon N-channel single gate MOSFET


    Original     		PDF M3D088 BF1107 SCA59 115102/00/01/pp8 PHILIPS MOSFET MARKING passive loopthrough n channel depletion MOSFET mosfet 5130 Q 817 mosfet K 2865 115102 4466 8 pin mosfet pin voltage marking code 10 sot23 BF1107

    mosfet K 2865

    Abstract: BF1107 PHILIPS RF MOSFET depletion MARKING PHILIPS MOSFET MARKING
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF1107 N-channel single gate MOSFET Product specification Supersedes data of 1998 Apr 07 File under Discrete Semiconductors, SC07 1998 Jun 22 Philips Semiconductors Product specification N-channel single gate MOSFET


    Original     		PDF M3D088 BF1107 BF1107 SCA60 115102/00/02/pp8 mosfet K 2865 PHILIPS RF MOSFET depletion MARKING PHILIPS MOSFET MARKING

    TRANSISTOR ww1

    Abstract: mosfet handbook trimmer 2-18 pf ww1 45 transistor trafo toroidal AN98021 BLF548 KDI-PPT820-75-3 4814 mosfet chip philips catalog potentiometer 2322 350
    Text: APPLICATION NOTE 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET AN98021 Philips Semiconductors 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET CONTENTS 1 INTRODUCTION 2 DESIGN CONSIDERATIONS 3 AMPLIFIER CONCEPT 4 INPUT CIRCUITRY


    Original     		PDF BLF548 AN98021 BLF548 SCA57 TRANSISTOR ww1 mosfet handbook trimmer 2-18 pf ww1 45 transistor trafo toroidal AN98021 KDI-PPT820-75-3 4814 mosfet chip philips catalog potentiometer 2322 350

    CA3130 peak detector

    Abstract: CA3066 CA3085 CA5130M Harris CA3086 CA3130 CA3130A CA5130 CD4007 CA5130AE
    Text: CA5130, CA5130A S E M I C O N D U C T O R NOT RECOMMENDED FOR NEW DESIGNS November 1996 15MHz, BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output Features Description • MOSFET Input Stage - Very High Zl . . . . . . . . . . . . 1.5TΩ 1.5 x 1012Ω (Typ)


    Original     		PDF CA5130, CA5130A 15MHz, CA5130A CA5130 1-800-4-HARRIS CA3130 peak detector CA3066 CA3085 CA5130M Harris CA3086 CA3130 CA3130A CD4007 CA5130AE

    spw -079 transformer

    Abstract: samsung galaxy s2 numeric digital 600 plus ups ckt diagram samsung galaxy s2 display Zener Diode ph 4148 ph 4148 zener diode CD4046 spice model DIODE SMD L4W lm2576 spice SN75492
    Text: Micrel Semiconductor 1997 Databook 1 _ General Information 2 _ Computer Peripherals 3 _ Low-Dropout Linear Voltage Regulators 4 _ Switch-Mode Voltage Regulators 5 _ MOSFET Drivers 6 _


    Original     		PDF 1-06A spw -079 transformer samsung galaxy s2 numeric digital 600 plus ups ckt diagram samsung galaxy s2 display Zener Diode ph 4148 ph 4148 zener diode CD4046 spice model DIODE SMD L4W lm2576 spice SN75492

    TL494 car charger schematic diagram

    Abstract: samsung galaxy s2 controller for PWM fan tl494 1A current to 0-5v voltage converter using LM317 SMD LD33 capacitor huang 2200uF 35V uc3843 flyback supply opto-coupler SMD MOSFET DRIVE 4606 schematic lcd inverter samsung sine wave inverter tl494 circuit diagram
    Text: Micrel Semiconductor 1997 Databook 1 _ General Information 2 _ Computer Peripherals 3 _ Low-Dropout Linear Voltage Regulators 4 _ Switch-Mode Voltage Regulators 5 _ MOSFET Drivers 6 _


    Original     		PDF accurat49565 TL494 car charger schematic diagram samsung galaxy s2 controller for PWM fan tl494 1A current to 0-5v voltage converter using LM317 SMD LD33 capacitor huang 2200uF 35V uc3843 flyback supply opto-coupler SMD MOSFET DRIVE 4606 schematic lcd inverter samsung sine wave inverter tl494 circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors’ new SiliconMAXTM power MOSFET range - a next generation development of the company’s advanced TrenchMOS technology - brings the benefits of ultra-low RDS on and high-speed switching to applications requiring transistors with voltage


    Original     		PDF SCS63

    ISOPLUS247

    Abstract: ixys application note 250V 10A TF 106 20P50P
    Text: Preliminary Technical Information PolarPTM Power MOSFET IXTR20P50P VDSS ID25 RDS on = - 500V = - 13A ≤ 490mΩ Ω P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXTR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 500


    Original     		PDF IXTR20P50P ISOPLUS247 E153432 100ms 20P50P ISOPLUS247 ixys application note 250V 10A TF 106

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarPTM Power MOSFET IXTR90P10P VDSS ID25 RDS on = = ≤ - 100V - 57A Ω 27mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXTR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 100 V


    Original     		PDF IXTR90P10P ISOPLUS247 E153432 100ms 90P10P

    ISOPLUS247

    Abstract: IXTR48P20P 48P20P
    Text: Preliminary Technical Information PolarPTM Power MOSFET IXTR48P20P VDSS ID25 RDS on = = ≤ - 200V - 30A Ω 93mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXTR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V


    Original     		PDF IXTR48P20P ISOPLUS247 E153432 100ms 48P20P ISOPLUS247 IXTR48P20P

    mitsumi fe415-g11

    Abstract: fe415-g11 Mitsumi fm IFT fe415-g11 TEA5762 fe415 BB112 equivalent Mitsumi fm fe415-g11 A7MCS TOKO AMERICA S18 k2837
    Text: INTEGRATED CIRCUITS DATA SHEET TEA5762 Self Tuned Radio STR Product specification Supersedes data of 1995 Jun 23 File under Integrated Circuits, IC01 1999 Aug 04 Philips Semiconductors Product specification Self Tuned Radio (STR) TEA5762 FEATURES • High impedance MOSFET input on AM


    Original     		PDF TEA5762 545002/02/pp32 mitsumi fe415-g11 fe415-g11 Mitsumi fm IFT fe415-g11 TEA5762 fe415 BB112 equivalent Mitsumi fm fe415-g11 A7MCS TOKO AMERICA S18 k2837

    TOP225

    Abstract: SOD89 TEA1562 TOP224Y TOP227Y equivalent VIPER100 Application Note VIPER50 application note top223y TOP227Y philips top201
    Text: Philips Semiconductors’ new ZenBlockTM replaces double ZenBlockTM diode-, RCD- or RC-snubbers in flyback converters Zener with integrated blocking diode The leakage inductance of the transformer in a flyback converter causes voltage spikes when the MOSFET is turned off. In general


    Original     		PDF effi5600 TOP225 SOD89 TEA1562 TOP224Y TOP227Y equivalent VIPER100 Application Note VIPER50 application note top223y TOP227Y philips top201

    IXFR140N30

    Abstract: IXFR140N30P ISOPLUS247 1M300
    Text: IXFR140N30P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 300V 70A Ω 26mΩ 200ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFR140N30P 200ns ISOPLUS247 E153432 140N30P 5-13-08-B IXFR140N30 IXFR140N30P ISOPLUS247 1M300

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFR140N30P RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 300V 70A Ω 26mΩ 200ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFR140N30P 200ns ISOPLUS247 E153432 140N30P 5-13-08-B

    MOSFET 2 ampere 300 v

    Abstract: IRF9150 mosfet p channel
    Text: TECHNICAL DATA POWER MOSFET P CHANNEL Devices 25 AMPERE 100 VOLTS 0.15 Ω IRF9150 • • • • REPETITIVE AVALANCHE RATINGS LOW RDS ON LOW DRIVE REQUIREMENT DYNAMIC dv/dt RATING ABSOLUTE MAXIMUM RATINGS (TC = 250C unless otherwise noted) Parameters / Test Conditions


    Original     		PDF IRF9150 MOSFET 2 ampere 300 v IRF9150 mosfet p channel

    IXTH48P20P

    Abstract: IXTT48P20P
    Text: Preliminary Technical Information PolarPTM Power MOSFET IXTH48P20P IXTT48P20P VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated G Test Conditions VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 200 V VGSS Continuous ±20


    Original     		PDF IXTH48P20P IXTT48P20P O-247 100ms 48P20P IXTH48P20P IXTT48P20P

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFK140N30P IXFX140N30P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode 300V 140A Ω 24mΩ 200ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR


    Original     		PDF IXFK140N30P IXFX140N30P 200ns O-264 140N30P 5-13-08-B

    AP0503GMA

    Abstract: No abstract text available
    Text: AP0503GMA Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ SO-8 similar area footprint and pin assignment BVDSS 30V ▼ Low Gate Drive Voltage RDS ON 4.2mΩ D ▼ Lower On-resistance ID 75A ▼ RoHS Compliant


    Original     		PDF AP0503GMA 100ms AP0503GMA

    Untitled

    Abstract: No abstract text available
    Text: MIC5013 MIC5013 Protected High- or Low-Side MOSFET Driver General Description Features The MIC5013 is an 8-pin MOSFET driver with over-current shutdown and a fault flag. It is designed to drive the gate of an N-channel power MOSFET above the supply rail highside power switch applications. The MIC5013 is compatible


    OCR Scan     		PDF MIC5013 MIC5013 14-Pin

    Untitled

    Abstract: No abstract text available
    Text: MIC5013 Protected High- or Low-Side MOSFET Driver General Description Features The MIC5013 is an 8-pin MOSFET driver with over-current shutdown and a fault flag. It is designed to drive the gate of an N-channel power MOSFET above the supply rail highside power switch applications. The MIC5013 is compatible


    OCR Scan     		PDF MIC5013 MIC5013

    RCA-CD4007

    Abstract: 3 phase Rectifier Phase Control IC ICAN-6668 vat 2000 ge ca3600e opamp CA3130 rms to dc ca3130 15-V CA3130 CA5130
    Text: Iteil Solid State { i l i J G-": CA5130A, CA5130 Linear Integrated Circuits Advance Information BiMOS Microprocessor Operational Amplifiers E Suffix ,(M Suffix) 1Not Shown With MOSFET Input/CM O S Output Features: «en 1 s (S Suffix) (T Suffix) • MOSFET input stage provides:


    OCR Scan     		PDF CA5130A, CA5130 i012f) RCA-CA5130A CA5130 92CS-19431R3 1CE-402, RCA-CD4007 3 phase Rectifier Phase Control IC ICAN-6668 vat 2000 ge ca3600e opamp CA3130 rms to dc ca3130 15-V CA3130

    mosfet 5130

    Abstract: CA5130M
    Text: CA5130, CA5130A Í D SHARRIS U U E M t c tf l D U C T O R 15MHz, BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output November 1996 Features Description • MOSFET Input Stage CA5130A and CA5130 are integrated circuit operational am plifiers that combine the advantage of both CMOS and


    OCR Scan     		PDF CA5130, CA5130A 15MHz, CA5130A CA5130 CA5130AE CA5130AT CA5130E CA5130M mosfet 5130 CA5130M

    p12p10

    Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
    Text: - POWER MOSFETs 5 P-CHANNEL POWER MOSFETs PAGE 2N6804 Avalanche Energy Rated P-Channel Power M OSFET. 5-3 2N6849 Avalanche Energy Rated P-Channel Power MOSFET. 5-8 2N6851


    OCR Scan     		PDF 2N6804 2N6849 2N6851 2N6895 2N6896 2N6897 2N6898 IRF9130, IRF9131, IRF9132, p12p10 IRF9530* p-channel power MOSFET Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240