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    MOSFET 500V 50A Search Results

    MOSFET 500V 50A Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    2SK1522-E1-E#T2 Renesas Electronics Corporation Nch Single Power MOSFET 500V 50A 110mOhm TO-264A Visit Renesas Electronics Corporation
    H5N5004PL-E0-E#T2 Renesas Electronics Corporation Nch Single Power MOSFET 500V 50A 110mohm TO-264A Visit Renesas Electronics Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 500V 50A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MOSFET 50A 500V 1 PDM505HC


    Original     		PDF PDM505HC

    55n50

    Abstract: ixys ixfn 55n50 IXFK50N50
    Text: HiPerFETTM Power MOSFET IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die VDSS I D25 RDS on t rr 500V 500V 500V 500V 55A 80mW 250ns 50A 100mW 250ns 55A 80mW 250ns 50A 100mW 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK) Maximum Ratings


    Original     		PDF 55N50 50N50 50N50 250ns 100mW ixys ixfn 55n50 IXFK50N50

    ixys ixfn 55n50

    Abstract: 50n50 IXFK50N50 IXFN50N50 IXFK55N50 IXFN55N50
    Text: HiPerFETTM Power MOSFET IXFN IXFN IXFK IXFK Single Die MOSFET 55N50 50N50 55N50 50N50 VDSS ID25 RDS on 500V 500V 500V 500V 55A 50A 55A 50A 80mΩ 100mΩ 80mΩ 100mΩ trr 250ns 250ns 250ns 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK)


    Original     		PDF 55N50 50N50 250ns O-264 ixys ixfn 55n50 50n50 IXFK50N50 IXFN50N50 IXFK55N50 IXFN55N50

    ixys ixfn 55n50

    Abstract: ixys ixfn55n50 IXFK50N50
    Text: HiPerFETTM Power MOSFET IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die VDSS I D25 RDS on t rr 500V 500V 500V 500V 55A 80mW 250ns 50A 100mW 250ns 55A 80mW 250ns 50A 100mW 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK) Maximum Ratings


    Original     		PDF 55N50 50N50 50N50 250ns 100mW ixys ixfn 55n50 ixys ixfn55n50 IXFK50N50

    Untitled

    Abstract: No abstract text available
    Text: MOSFET 50A 500V 1 PDM505HA P2HM505HA


    Original     		PDF PDM505HA P2HM505HA

    Untitled

    Abstract: No abstract text available
    Text: MOSFET 50A 450 500V 1 PD7M441H P2H7M441H PD7M440H


    Original     		PDF PD7M441H P2H7M441H PD7M440H

    Untitled

    Abstract: No abstract text available
    Text: MOSFET 50A 450 500V 1 PD7M441L P2H7M441L PD7M440L


    Original     		PDF PD7M441L P2H7M441L PD7M440L

    isotop mosfet 100V

    Abstract: STE53NM50
    Text: STE53NM50 N-CHANNEL 500V - 0.08Ω - 50A ISOTOP MDmesh Power MOSFET PRELIMINARY DATA TYPE STE53NM50 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V < 0.1Ω 50 A TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE


    Original     		PDF STE53NM50 isotop mosfet 100V STE53NM50

    ultrasound transducer high power driver

    Abstract: ultrasound transducer circuit driver 4973 DRF1202 schmitt trigger non inverting DRF12XX
    Text: DRF1202 PRELIMINARY 500V, 50A, 30MHz MOSFET Driver Hybrid The DRF1202 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased


    Original     		PDF DRF1202 30MHz DRF1202 ultrasound transducer high power driver ultrasound transducer circuit driver 4973 schmitt trigger non inverting DRF12XX

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD F5N50 Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC F5N50 is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the


    Original     		PDF F5N50 F5N50 QW-R502-A90

    IRF820

    Abstract: No abstract text available
    Text: IRF820 N-channel 500V - 2.5Ω - 4A TO-220 PowerMesh II MOSFET General features Type VDSS RDS on ID IRF820 500V <0.3Ω 4A • Extremely high dv/dt capability ■ 100% avalnche tested ■ New high voltage benchmark ■ Gate charge minimized 3 1 2 TO-220


    Original     		PDF IRF820 O-220 O-220 IRF820

    IRF820

    Abstract: JESD97 IRF8204
    Text: IRF820 N-channel 500V - 2.5Ω - 4A TO-220 PowerMesh II MOSFET General features Type VDSS RDS on ID IRF820 500V <0.3Ω 4A • Extremely high dv/dt capability ■ 100% avalnche tested 3 ■ New high voltage benchmark ■ Gate charge minimized 1 TO-220 c


    Original     		PDF IRF820 O-220 IRF820 JESD97 IRF8204

    DL2M100N5

    Abstract: dawin
    Text: D W DAWIN Electronics TM DL2M100N5 May. 2009 500V DUAL N-Channel MOSFET Description Equivalent Circuit and Package DAWIN’S Dual power MOSFET devices are designed for switching applications of high voltage and current. You have to connect external fast recovery diode reverse connected across each MOSFET


    Original     		PDF DL2M100N5 250nC DL2M100N5 dawin

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N50 Power MOSFET 8A, 500V N-CHANNEL POWER MOSFET  1 DESCRIPTION The UTC 8N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original     		PDF O-220F1 O-220 QW-R502-546

    61N50

    Abstract: 58N50 D-68623 92810G
    Text: IXFN 58N50 IXFN 61N50 Preliminary Data Sheet VDSS IXFN 58N50 500V IXFN 61N50 500V High Current Power MOSFET N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 500 V V GS Continuous ±20


    Original     		PDF 58N50 61N50 58N50 61N50 OT-227 D-68623 92810G

    DRF1202

    Abstract: DRF12XX
    Text: DRF1202 500V, 50A, 30MHz MOSFET Driver Hybrid The DRF1202 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.


    Original     		PDF DRF1202 30MHz DRF1202 CF1202. DRF12XX

    Untitled

    Abstract: No abstract text available
    Text: DRF1202 500V, 50A, 30MHz MOSFET Driver Hybrid The DRF1202 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.


    Original     		PDF DRF1202 30MHz DRF1202 15MHz AcousG188. DRF1202.

    Untitled

    Abstract: No abstract text available
    Text: DRF1202 500V, 50A, 30MHz MOSFET Driver Hybrid The DRF1202 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.


    Original     		PDF DRF1202 30MHz DRF1202 15MHz AcousG188. DRF1202.

    ultrasound transducer circuit driver

    Abstract: DRF1202 DRF12XX
    Text: DRF1202 500V, 50A, 30MHz MOSFET Driver Hybrid The DRF1202 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.


    Original     		PDF DRF1202 30MHz DRF1202 15MHz DRF1202. ultrasound transducer circuit driver DRF12XX

    DRF1202

    Abstract: No abstract text available
    Text: DRF1202 500V, 50A, 30MHz MOSFET Driver Hybrid The DRF1202 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.


    Original     		PDF DRF1202 30MHz DRF1202 15MHz RG188. DRF1202.

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet D V DSS HiPerFET Power MOSFET IXFN IXFN IXFK IXFK Single MOSFET Die 55N50 50N50 55N50 50N50 500V 500V 500V 500V K DS on ^D25 55A 50A 55A 50A 85m Q 100m£2 85m£2 100m£2 250ns 250ns 250ns 250ns TO-264 AA (IXFK) Symbol Maximum Ratings


    OCR Scan     		PDF 250ns 250ns 55N50 50N50 50N50 O-264

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Preliminary Data Sheet V DSS HiPerFET Power MOSFET IXFN IXFN IXFK IXFK Single MOSFET Die 55N50 50N50 55N50 50N50 500V 500V 500V 500V D trr DS on ^D25 55A 50A 55A 50A 85m£2 100m£2 85m£2 100m£2 250ns 250ns 250ns 250ns TO-264 AA (IXFK) Symbol


    OCR Scan     		PDF 55N50 50N50 250ns O-264

    FM50DY-9

    Abstract: kiv4 fm50DY MOSFET Modules
    Text: MITSUBISHI MOSFET MODULES F M 5 0 D Y - 9 . - 1 0 MEDIUM POWER SWITCHING USE _ INSULATED TYPE FM50DY-9, -10 • lD . 50A • V DSs . 450/500V


    OCR Scan     		PDF FM50DY-9, 450/500V E80271 FM50DY-9 kiv4 fm50DY MOSFET Modules

    MOSFET Modules

    Abstract: 2MI100F-025 "MOSFET Modules" 2MI50S-050 2M150F-050 2MI100F-050 2MI50F-050 M210 2MI100F
    Text: COLLMER SEMICONDUCTOR INC 34E I> 2 2 3 â 7 cia GG01553 T ' 3 ^ BICOL - i 5 FUJI MOSFET M odules 250V 500V MOSFET Module advantages: • Increase carrier frequencies • Improve control accuracy MOSFET Modules are used on: • Switch-mode power supplies SMPS


    OCR Scan     		PDF 20kHz) 120VAC 240VAC 20kHz 25-35kg MOSFET Modules 2MI100F-025 "MOSFET Modules" 2MI50S-050 2M150F-050 2MI100F-050 2MI50F-050 M210 2MI100F