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    MOSFET 4939N Search Results

    MOSFET 4939N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 4939N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4939n

    Abstract: mosfet 4939n NTMS4939NR2G
    Text: NTMS4939N Power MOSFET 30 V, 12.5 A, N−Channel, SO−8 Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF NTMS4939N NTMS4939N/D 4939n mosfet 4939n NTMS4939NR2G

    4939N

    Abstract: mosfet 4939n
    Text: NTMS4939N Power MOSFET 30 V, 12.5 A, N−Channel, SO−8 Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF NTMS4939N NTMS4939N/D 4939N mosfet 4939n

    4939n

    Abstract: 15AID 488A
    Text: NTMFS4939N Power MOSFET 30 V, 53 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF NTMFS4939N NTMFS4939N/D 4939n 15AID 488A

    4939n

    Abstract: mosfet 4939n NTMFS4939NT1G NTMFS4939NT3G NTMFS4939N
    Text: NTMFS4939N Power MOSFET 30 V, 53 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF NTMFS4939N NTMFS4939N/D 4939n mosfet 4939n NTMFS4939NT1G NTMFS4939NT3G NTMFS4939N

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4939N Power MOSFET 30 V, 53 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF NTMFS4939N NTMFS4939N/D

    mosfet 4939n

    Abstract: 4939n
    Text: NTMFS4939N Power MOSFET 30 V, 53 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF NTMFS4939N NTMFS4939N/D mosfet 4939n 4939n

    4939N

    Abstract: mosfet 4939n NTMFS4939NT1G NTMFS4939NT3G
    Text: NTMFS4939N Power MOSFET 30 V, 53 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF NTMFS4939N NTMFS4939N/D 4939N mosfet 4939n NTMFS4939NT1G NTMFS4939NT3G