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    MOSFET 4927N Search Results

    MOSFET 4927N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 4927N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4927N

    Abstract: mosfet 4927n NTMFS4927N NTMFS4927NT1G
    Text: NTMFS4927N Power MOSFET 30 V, 38 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives


    Original     		PDF NTMFS4927N NTMFS4927N/D 4927N mosfet 4927n NTMFS4927N NTMFS4927NT1G

    4927N

    Abstract: mosfet 4927n NTMFS4927N
    Text: NTMFS4927N Power MOSFET 30 V, 38 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives


    Original     		PDF NTMFS4927N NTMFS4927N/D 4927N mosfet 4927n

    4927n

    Abstract: mosfet 4927n
    Text: NTMFS4927N Power MOSFET 30 V, 38 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives


    Original     		PDF NTMFS4927N NTMFS4927N/D 4927n mosfet 4927n

    4927N

    Abstract: mosfet 4927n NTMFS4927NC ntmfs4927 NTMFS4927NT3G
    Text: NTMFS4927N, NTMFS4927NC Power MOSFET 30 V, 38 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives


    Original     		PDF NTMFS4927N, NTMFS4927NC NTMFS4927N/D 4927N mosfet 4927n ntmfs4927 NTMFS4927NT3G

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4927N, NTMFS4927NC Power MOSFET 30 V, 38 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives


    Original     		PDF NTMFS4927N, NTMFS4927NC NTMFS4927N/D

    mosfet 4927n

    Abstract: 4927N NTMFS4927NT1G NTMFS4927N NTMFS4927NT3G DFN5 1.6 PACKAGE DIMENSIONS
    Text: NTMFS4927N Power MOSFET 30 V, 38 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF NTMFS4927N NTMFS4927N/D mosfet 4927n 4927N NTMFS4927NT1G NTMFS4927N NTMFS4927NT3G DFN5 1.6 PACKAGE DIMENSIONS