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    MOSFET 4846N Search Results

    MOSFET 4846N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 4846N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4846N Power MOSFET 30 V, 100 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package


    Original     		PDF NTMFS4846N AND8195/D NTMFS4846N/D

    4846N

    Abstract: NTMFS4846N NTMFS4846NT1G NTMFS4846NT3G mosfet 4846n
    Text: NTMFS4846N Power MOSFET 30 V, 100 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package


    Original     		PDF NTMFS4846N AND8195/D NTMFS4846N/D 4846N NTMFS4846N NTMFS4846NT1G NTMFS4846NT3G mosfet 4846n

    4846N

    Abstract: No abstract text available
    Text: NTMFS4846N Power MOSFET 30 V, 100 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package


    Original     		PDF NTMFS4846N AND8195/D NTMFS4846N/D 4846N

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4846N Power MOSFET 30 V, 100 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package


    Original     		PDF NTMFS4846N AND8195/D NTMFS4846N/D

    NTMFS4846N

    Abstract: NTMFS4846NT1G NTMFS4846NT3G
    Text: NTMFS4846N Power MOSFET 30 V, 100 A, Single N-Channel, SO-8 FL Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThermally Enhanced SO8 Package


    Original     		PDF NTMFS4846N NTMFS4846N/D NTMFS4846N NTMFS4846NT1G NTMFS4846NT3G

    4846N

    Abstract: No abstract text available
    Text: NTMFS4846N Power MOSFET 30 V, 100 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package


    Original     		PDF NTMFS4846N AND8195/D NTMFS4846N/D 4846N