MOSFET 4410A Search Results

MOSFET 4410A Result Highlights (5)

Part	Manufacturer	Description
TCK424G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK425G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK423G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK422G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET

MOSFET 4410A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
4410AGM Abstract: PART MARKING 9A AP4410AGM AP4410 Text: AP4410AGM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic BVDSS RDS ON ID D D D D 30V 13.5mΩ 10A G SO-8 S S S Description	Original	AP4410AGM 4410AGM 4410AGM PART MARKING 9A AP4410AGM AP4410	PDF
Untitled Abstract: No abstract text available Text: Advanced Power Electronics Corp. AP4410AGM-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D BV DSS Low On-resistance 30V RDS ON Fast Switching Performance G RoHS-compliant, halogen-free S 13.5mΩ ID 10A Description D Advanced Power MOSFETs from APEC provide the designer with the best	Original	AP4410AGM-HF-3 AP4410AGM-HF-3 AP4410A 4410AGM	PDF
D-6840 Abstract: transistor BD 441 IXBD 4413 efu dual mosfet POB11SO BD4410PI 4410PI ixys vco 52 full bridge igbt induction heating generator 2675000101 Text: 4bE D • Mb ô b E E b I X Y S 000105Ö 1 H IX Y CORP □IXYS T ’- S Z . H V ^ O PRELIM INARY INFORMATION* Data Sheet No. 91503A October 1991 ISOSMART HALF BRIDGE DRIVER CHIPSETS IXBD4410 / IXBD4411 / IXBD4412 / IXBD4413 Features 1200V o r Greater Low- to High-Side Isolation.	OCR Scan	IXBD4410/4411) 1503A IXBD4410 IXBD4411 IXBD4412 IXBD4413 10OOpF 100ns 000pF D-6840 transistor BD 441 IXBD 4413 efu dual mosfet POB11SO BD4410PI 4410PI ixys vco 52 full bridge igbt induction heating generator 2675000101	PDF

Catalog Datasheet

Type

Document Tags

PDF

4410AGM

Abstract: PART MARKING 9A AP4410AGM AP4410
Text: AP4410AGM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic BVDSS RDS ON ID D D D D 30V 13.5mΩ 10A G SO-8 S S S Description

Original

AP4410AGM 4410AGM 4410AGM PART MARKING 9A AP4410AGM AP4410

PDF

Untitled

Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP4410AGM-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D BV DSS Low On-resistance 30V RDS ON Fast Switching Performance G RoHS-compliant, halogen-free S 13.5mΩ ID 10A Description D Advanced Power MOSFETs from APEC provide the designer with the best

Original

AP4410AGM-HF-3 AP4410AGM-HF-3 AP4410A 4410AGM

PDF

D-6840

Abstract: transistor BD 441 IXBD 4413 efu dual mosfet POB11SO BD4410PI 4410PI ixys vco 52 full bridge igbt induction heating generator 2675000101
Text: 4bE D • Mb ô b E E b I X Y S 000105Ö 1 H IX Y CORP □IXYS T ’- S Z . H V ^ O PRELIM INARY INFORMATION* Data Sheet No. 91503A October 1991 ISOSMART HALF BRIDGE DRIVER CHIPSETS IXBD4410 / IXBD4411 / IXBD4412 / IXBD4413 Features 1200V o r Greater Low- to High-Side Isolation.

OCR Scan

IXBD4410/4411) 1503A IXBD4410 IXBD4411 IXBD4412 IXBD4413 10OOpF 100ns 000pF D-6840 transistor BD 441 IXBD 4413 efu dual mosfet POB11SO BD4410PI 4410PI ixys vco 52 full bridge igbt induction heating generator 2675000101

PDF