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    MOSFET 400V 26A Search Results

    MOSFET 400V 26A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 400V 26A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 25N40 Preliminary Power MOSFET 400V, 26A N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 25N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original     		PDF 25N40 25N40 QW-R502-621

    N-channel MOSFET to-247

    Abstract: 25N40 mosfet 400V
    Text: UNISONIC TECHNOLOGIES CO., LTD 25N40 Preliminary Power MOSFET 400V, 26A N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 25N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original     		PDF 25N40 25N40 O-247 QW-R502-621 N-channel MOSFET to-247 mosfet 400V

    FDP26N40

    Abstract: FDPF26N40 MOSFET 400V
    Text: UniFETTM FDP26N40 / FDPF26N40 tm N-Channel MOSFET 400V, 26A, 0.16Ω Features Description • RDS on = 0.13Ω ( Typ.)@ VGS = 10V, ID = 13A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP26N40 FDPF26N40 FDPF26N40 MOSFET 400V

    MOSFET 400V 26a

    Abstract: FDP26N40 MOSFET 400V TO-220 FDPF26N40
    Text: UniFETTM FDP26N40 / FDPF26N40 tm N-Channel MOSFET 400V, 26A, 0.16Ω Features Description • RDS on = 0.13Ω ( Typ.)@ VGS = 10V, ID = 13A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP26N40 FDPF26N40 MOSFET 400V 26a MOSFET 400V TO-220 FDPF26N40

    Untitled

    Abstract: No abstract text available
    Text: UniFETTM FDP26N40 / FDPF26N40 tm N-Channel MOSFET 400V, 26A, 0.16Ω Features Description • RDS on = 0.13Ω ( Typ.)@ VGS = 10V, ID = 13A • Low gate charge ( Typ. 48nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP26N40 FDPF26N40

    STW26NM50

    Abstract: W26NM50 N-channel MOSFET to-247
    Text: STW26NM50 N-CHANNEL 500V - 0.10Ω - 26A TO-247 Zener-Protected MDmesh Power MOSFET TYPE VDSS RDS on ID STW26NM50 500 V < 0.120 Ω 30 A TYPICAL RDS(on) = 0.10Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE


    Original     		PDF STW26NM50 O-247 STW26NM50 W26NM50 N-channel MOSFET to-247

    STW26NM60

    Abstract: No abstract text available
    Text: STW26NM60 N-CHANNEL 600V - 0.125Ω - 26A TO-247 Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STW26NM60 • ■ ■ ■ ■ VDSS RDS on ID 600V < 0.135Ω 26 A TYPICAL RDS(on) = 0.125Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED


    Original     		PDF STW26NM60 O-247 STW26NM60

    Untitled

    Abstract: No abstract text available
    Text: STW26NM50 N-CHANNEL 500V - 0.10Ω - 26A TO-247 Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STW26NM50 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.120Ω 26 A TYPICAL RDS(on) = 0.10Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED


    Original     		PDF STW26NM50 O-247

    Untitled

    Abstract: No abstract text available
    Text: STU26NM50 N-CHANNEL 500V - 0.10Ω - 26A Max220 Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STU26NM50 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V < 0.120Ω 26 A TYPICAL RDS(on) = 0.01Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED


    Original     		PDF Max220 STU26NM50 Max220

    W26NM50

    Abstract: No abstract text available
    Text: STW26NM50 N-CHANNEL 500V - 0.10Ω - 26A TO-247 Zener-Protected MDmesh Power MOSFET n n n n n TYPE VDSS RDS on ID STW26NM50 500 V < 0.120 Ω 30 A TYPICAL RDS(on) = 0.10Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE


    Original     		PDF O-247 STW26NM50 O-247 W26NM50

    P011S

    Abstract: No abstract text available
    Text: STU26NM60 STU26NM60I N-CHANNEL 600V - 0.125Ω - 26A Max220/Max220I Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STU26NM60 STU26NM60I • ■ ■ ■ ■ VDSS RDS on ID 600V 600V < 0.135Ω < 0.135Ω 26 A 26 A TYPICAL RDS(on) = 0.0125Ω HIGH dv/dt AND AVALANCHE CAPABILITIES


    Original     		PDF Max220/Max220I STU26NM60 STU26NM60I Max220 P011S

    Untitled

    Abstract: No abstract text available
    Text: STU26NM50 STU26NM50I N-CHANNEL 500V - 0.10Ω - 26A Max220/Max220I Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STU26NM50 STU26NM50I • ■ ■ ■ ■ VDSS RDS on ID 500V 500V < 0.120Ω < 0.120Ω 26 A 26 A TYPICAL RDS(on) = 0.01Ω HIGH dv/dt AND AVALANCHE CAPABILITIES


    Original     		PDF Max220/Max220I STU26NM50 STU26NM50I Max220

    Untitled

    Abstract: No abstract text available
    Text: STU26NM60 STU26NM60I N-CHANNEL 600V - 0.120Ω - 26A Max220/Max220I Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STU26NM60 STU26NM60I • ■ ■ ■ ■ VDSS RDS on ID 600V 600V < 0.140Ω < 0.140Ω 26 A 26 A TYPICAL RDS(on) = 0.120Ω HIGH dv/dt AND AVALANCHE CAPABILITIES


    Original     		PDF STU26NM60 STU26NM60I Max220/Max220I

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 26N50 Preliminary Power MOSFET 26A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 26N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original     		PDF 26N50 26N50 QW-R502-789

    W26NM50

    Abstract: 26nm50 MAX220 STU26NM50 STU26NM50I STW26NM50
    Text: STW26NM50 STU26NM50, STU26NM50I N-CHANNEL 500V - 0.10Ω - 26A TO-247,Max220,Max220I Zener-Protected MDmesh Power MOSFET n n n n n TYPE VDSS RDS on ID STW26NM50 STU26NM50 STU26NM50I 500 V 500 V 500 V < 0.120 Ω < 0.120 Ω < 0.120 Ω 30 A 26 A 26 A TYPICAL RDS(on) = 0.10Ω


    Original     		PDF STW26NM50 STU26NM50, STU26NM50I O-247 Max220 Max220I STU26NM50 O-247 W26NM50 26nm50 STU26NM50 STU26NM50I STW26NM50

    26nm50

    Abstract: MAX220 U26NM50
    Text: STW26NM50 STU26NM50, STU26NM50I N-CHANNEL 500V - 0.10Ω - 26A TO-247,Max220,Max220I Zener-Protected MDmesh Power MOSFET n n n n n TYPE VDSS RDS on ID STW26NM50 STU26NM50 STU26NM50I 500 V 500 V 500 V < 0.120 Ω < 0.120 Ω < 0.120 Ω 30 A 26 A 26 A TYPICAL RDS(on) = 0.10Ω


    Original     		PDF O-247 Max220 Max220I STW26NM50 STU26NM50 STU26NM50I STU26NM50, O-247 26nm50 U26NM50

    smps with uc3842 and tl431

    Abstract: mc34063 step down with mosfet mc34063 step up with mosfet MC34063 MOSFET UC3842 step up converter mc34063 step down 5a mc34063 step up 5a MOSFET 1000v 30a uc3842 step down mc34063 triple output
    Text: POWER SUPPLY EQUIPMENT STMicroelectronics SOLUTIONS Power Converter Block Diagram Mains Mains Rectification Conditioning Mains Rectification / Inrush Current Limitation Mains Conditioning Primary Secondary Primary Secondary RECOMMENDED DEVICES MAIN FEATURES


    Original     		PDF BF3510TV /BF3506TV BHA/K3012TV BTAxx600CW AVS08 L6560/A L6561 L4981A/B ST90T40 /W/P/HxxNB50/60/80 smps with uc3842 and tl431 mc34063 step down with mosfet mc34063 step up with mosfet MC34063 MOSFET UC3842 step up converter mc34063 step down 5a mc34063 step up 5a MOSFET 1000v 30a uc3842 step down mc34063 triple output

    diode schottky 1000V 10a

    Abstract: SiC MOS APT0502
    Text: APT26M100JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330mΩ typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode


    Original     		PDF APT26M100JCU3 OT-227) diode schottky 1000V 10a SiC MOS APT0502

    Untitled

    Abstract: No abstract text available
    Text: APT26M100JCU2 ISOTOP Boost chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330mΩ typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch


    Original     		PDF APT26M100JCU2 OT-227)

    APT26M100JCU2

    Abstract: sic-diode 1000v APT0502 diode schottky 1000V 10a
    Text: APT26M100JCU2 ISOTOP Boost chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330mΩ typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch


    Original     		PDF APT26M100JCU2 OT-227) APT26M100JCU2 sic-diode 1000v APT0502 diode schottky 1000V 10a

    Untitled

    Abstract: No abstract text available
    Text: APT26M100JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330mΩ typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode


    Original     		PDF APT26M100JCU3 OT-227)

    smps 450 W

    Abstract: IRFPS43N50K
    Text: PD- 93922 PROVISIONAL IRFPS43N50K SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristics l Improved Avalanche Ruggedness and


    Original     		PDF IRFPS43N50K Super-247TM Voltage252-7105 smps 450 W IRFPS43N50K

    2SK3680-01

    Abstract: n-channel 250V power mosfet VDS50
    Text: 2SK3680-01 200401 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power 11.6±0.2 Applications Switching regulators


    Original     		PDF 2SK3680-01 2SK3680-01 n-channel 250V power mosfet VDS50

    2SK3680-01

    Abstract: 2sk3680
    Text: 2SK3680-01 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters


    Original     		PDF 2SK3680-01 2SK3680-01 2sk3680