Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOSFET 400 AMP Search Results

    MOSFET 400 AMP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 400 AMP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RA45H4045MR

    Abstract: RA45H4045MR-01 RA45H4045MR-E01 transistor MOSFET 924 ON
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4045MR 400-450MHz 45W 12.5V MOBILE RADIO DESCRIPTION The RA45H4045MR is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original
    PDF RA45H4045MR 400-450MHz RA45H4045MR 45-watt 450-MHz RA45H4045MR-01 RA45H4045MR-E01 transistor MOSFET 924 ON

    RA45H4047M

    Abstract: RA45H4047M-01 RA45H4047M-E01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4047M 400-470MHz 45W 12.5V MOBILE RADIO DESCRIPTION The RA45H4047M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original
    PDF RA45H4047M 400-470MHz RA45H4047M 45-watt 470-MHz RA45H4047M-01 RA45H4047M-E01

    RA30H4047M

    Abstract: RA30H4047M-E01 RA30H4047M-01 30H4047M
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M 400-470MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original
    PDF RA30H4047M 400-470MHz RA30H4047M 30-watt 470-MHz RA30H4047M-E01 RA30H4047M-01 30H4047M

    hatfield attenuator

    Abstract: RA30H4045MR-01 RA30H4045MR RF MOSFET MODULE RA30H4045MR-E01 50 watt transistor amplifier 6.1 circuit diagram RF MODULE CIRCUIT DIAGRAM
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4045MR 400-450MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H4045MR is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original
    PDF RA30H4045MR 400-450MHz RA30H4045MR 30-watt 450-MHz hatfield attenuator RA30H4045MR-01 RF MOSFET MODULE RA30H4045MR-E01 50 watt transistor amplifier 6.1 circuit diagram RF MODULE CIRCUIT DIAGRAM

    hatfield attenuator

    Abstract: RF MOSFET MODULE rf power amplifier circuit by 400-470mhz RA07M4047M RA07M4047M-01 RA07M4047M-E01 RF MODULE 435Mhz circuit diagram of fm RA07M
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M4047M 400-470MHz 7W 7.2V PORTABLE RADIO DESCRIPTION The RA07M4047M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 400- to 470-MHz


    Original
    PDF RA07M4047M 400-470MHz RA07M4047M 470-MHz hatfield attenuator RF MOSFET MODULE rf power amplifier circuit by 400-470mhz RA07M4047M-01 RA07M4047M-E01 RF MODULE 435Mhz circuit diagram of fm RA07M

    RA07N4047M

    Abstract: RA07N4047M-01 RA07N4047
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N4047M 400-470MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N4047M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 400- to


    Original
    PDF RA07N4047M 400-470MHz RA07N4047M 470-MHz RA07N4047M-01 RA07N4047

    RA45H4047M

    Abstract: RA45H4047M-01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4047M 400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H4047M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original
    PDF RA45H4047M 400-470MHz RA45H4047M 45-watt 470-MHz RA45H4047M-01

    RA07N4047M

    Abstract: RA07N4047M-01 RA07N4047M-E01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECA UTIONS RA07N4047M 400-470MHz 7.5W 9.6V PORTABLE RADIO DESCRIPTION The RA07N4047M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 400- to 470-MHz


    Original
    PDF RA07N4047M 400-470MHz RA07N4047M 470-MHz RA07N4047M-01 RA07N4047M-E01

    RA45H4045MR

    Abstract: RA45H4045MR-01 RF POWER amplifier 10 watt
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4045MR 400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H4045MR is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original
    PDF RA45H4045MR 400-450MHz RA45H4045MR 45-watt 450-MHz RA45H4045MR-01 RF POWER amplifier 10 watt

    RA30H4047M

    Abstract: RA30H4047M-01 300w transistor power amplifier circuit diagram
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original
    PDF RA30H4047M 400-470MHz RA30H4047M 30-watt 470-MHz RA30H4047M-01 300w transistor power amplifier circuit diagram

    rf power amplifier circuit by 400-470mhz

    Abstract: RA13H4047M RA13H4047M-01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4047M 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4047M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original
    PDF RA13H4047M 400-470MHz RA13H4047M 13-watt 470-MHz rf power amplifier circuit by 400-470mhz RA13H4047M-01

    RA13H4047M-E01

    Abstract: RA13H4047M RA13H4047M-01 rf power amplifier circuit by 400-470mhz
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4047M 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4047M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original
    PDF RA13H4047M 400-470MHz RA13H4047M 13-watt 470-MHz RA13H4047M-E01 RA13H4047M-01 rf power amplifier circuit by 400-470mhz

    MRF177

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz N–CHANNEL BROADBAND RF POWER MOSFET ARCHIVE INFORMATION Designed for broadband commercial and military applications up to 400 MHz


    Original
    PDF MRF177/D MRF177 MRF177/D

    RA30H4047M

    Abstract: RA30H gp 532 RA30H4047M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original
    PDF RA30H4047M 400-470MHz RA30H4047M 30-watt 470-MHz RA30H gp 532 RA30H4047M-101

    transistor MOSFET 924 ON

    Abstract: RF MOSFET MODULE RA45H4047M RA45H4047M-101 circuit diagram power amplifier 450w mitsubishi power module
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4047M RoHS Compliance, 400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H4047M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original
    PDF RA45H4047M 400-470MHz RA45H4047M 45-watt 470-MHz transistor MOSFET 924 ON RF MOSFET MODULE RA45H4047M-101 circuit diagram power amplifier 450w mitsubishi power module

    RA07H4047M-01

    Abstract: RA07H4047M low power rf transistor T
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H4047M 400-470MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H4047M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 400- to 470-MHz


    Original
    PDF RA07H4047M 400-470MHz RA07H4047M 470-MHz RA07H4047M-01 low power rf transistor T

    50 watt transistor amplifier 6.1 circuit diagram

    Abstract: d408 RA07M404 circuit diagram of fm
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M4047M 400-470MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M4047M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 400- to 470-MHz


    Original
    PDF RA07M4047M 400-470MHz RA07M4047M 470-MHz 50 watt transistor amplifier 6.1 circuit diagram d408 RA07M404 circuit diagram of fm

    GP108

    Abstract: metwn
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H4047M 400-470MHz 7W 12.5V, 2 Stage Amp. For PORTABLE/ MOBILE RADIO DESCRIPTION The RA07H4047M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable/ mobile radios that operate in the 400- to


    Original
    PDF RA07H4047M 400-470MHz RA07H4047M 470-MHz nomina-1-55685-739 I-20041 GP108 metwn

    RA30H

    Abstract: RA30H4047 circuit diagram of fm
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz


    Original
    PDF RA30H4047M 400-470MHz RA30H4047M 30-watt 470-MHz RA30H RA30H4047 circuit diagram of fm

    50ND2

    Abstract: RA45H4047M RA45H4047M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4047M RoHS Compliance, 400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H4047M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original
    PDF RA45H4047M 400-470MHz RA45H4047M 45-watt 470-MHz 50ND2 RA45H4047M-101

    lt 7210

    Abstract: 400M 430M 470M RA60H4047M1 RA60H4047M1-101 RA60H4047M
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4047M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original
    PDF RA60H4047M1 400-470MHz RA60H4047M1 60-watt 470-MHz lt 7210 400M 430M 470M RA60H4047M1-101 RA60H4047M

    RA55H4047M

    Abstract: ra55h4047
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H4047M RoHS COMPLIANCE , 400-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H4047M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original
    PDF RA55H4047M 400-470MHz RA55H4047M 55-watt 470-MHz ra55h4047

    J115 mosfet

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF177 RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz


    OCR Scan
    PDF 10pFD 50Vdc 1N5347B, RF177 J115 mosfet

    J945

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field E ffect Transistors MRF177 N-Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz


    OCR Scan
    PDF MarketinC14 10nFD 50Vdc 1N5347B 20Vdc RF177 J945