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    MOSFET 400 A Search Results

    MOSFET 400 A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 400 A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RA45H4045MR

    Abstract: RA45H4045MR-01 RA45H4045MR-E01 transistor MOSFET 924 ON
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4045MR 400-450MHz 45W 12.5V MOBILE RADIO DESCRIPTION The RA45H4045MR is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original     		PDF RA45H4045MR 400-450MHz RA45H4045MR 45-watt 450-MHz RA45H4045MR-01 RA45H4045MR-E01 transistor MOSFET 924 ON

    RA30H4047M

    Abstract: RA30H gp 532 RA30H4047M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original     		PDF RA30H4047M 400-470MHz RA30H4047M 30-watt 470-MHz RA30H gp 532 RA30H4047M-101

    RA13H4047M

    Abstract: rf power amplifier circuit by 400-470mhz RF MODULE 435Mhz RF MOSFET MODULE RA13H4047M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4047M RoHS Compliance , 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4047M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original     		PDF RA13H4047M 400-470MHz RA13H4047M 13-watt 470-MHz rf power amplifier circuit by 400-470mhz RF MODULE 435Mhz RF MOSFET MODULE RA13H4047M-101

    transistor MOSFET 924 ON

    Abstract: RF MOSFET MODULE RA45H4047M RA45H4047M-101 circuit diagram power amplifier 450w mitsubishi power module
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4047M RoHS Compliance, 400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H4047M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original     		PDF RA45H4047M 400-470MHz RA45H4047M 45-watt 470-MHz transistor MOSFET 924 ON RF MOSFET MODULE RA45H4047M-101 circuit diagram power amplifier 450w mitsubishi power module

    RA07N4047M-101

    Abstract: RA07N4047M
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N4047M RoHS Compliance , 400-470MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N4047M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 400- to


    Original     		PDF RA07N4047M 400-470MHz RA07N4047M 470-MHz RA07N4047M-101

    RA07M4047MS

    Abstract: RF MODULE 435Mhz
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M4047MSA RoHS Compliance , 400-470MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M4047MSA is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 400- to


    Original     		PDF RA07M4047MSA 400-470MHz RA07M4047MSA 470-MHz RA07M4047MS RF MODULE 435Mhz

    RA07M4047M-101

    Abstract: RA07M4047M
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M4047M RoHS Compliance , 400-470MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M4047M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 400- to


    Original     		PDF RA07M4047M 400-470MHz RA07M4047M 470-MHz RA07M4047M-101

    RA45H4045MR

    Abstract: RA45H4045MR-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4045MR RoHS Compliance , 400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H4045MR is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original     		PDF RA45H4045MR 400-450MHz RA45H4045MR 45-watt 450-MHz RA45H4045MR-101

    RA07N4047M

    Abstract: RA07N4047M-101 application MOSFET transmitters fm Vgg-25
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N4047M RoHS Compliance , 400-470MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N4047M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 400- to


    Original     		PDF RA07N4047M 400-470MHz RA07N4047M 470-MHz RA07N4047M-101 application MOSFET transmitters fm Vgg-25

    RF MOSFET MODULE

    Abstract: RA30H4047 RA30H4047M RA30H4047M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original     		PDF RA30H4047M 400-470MHz RA30H4047M 30-watt 470-MHz RF MOSFET MODULE RA30H4047 RA30H4047M-101

    RA07M4047MS

    Abstract: RA07M4047MSA RF MODULE 435Mhz
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M4047MSA RoHS Compliance , 400-470MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M4047MSA is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 400- to


    Original     		PDF RA07M4047MSA 400-470MHz RA07M4047MSA 470-MHz RA07M4047MS RF MODULE 435Mhz

    RA55H4047M

    Abstract: ra55h4047 RA55H4047M download RA55 RF MOSFET MODULE
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H4047M RoHS COMPLIANCE , 400-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H4047M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original     		PDF RA55H4047M 400-470MHz RA55H4047M 55-watt 470-MHz ra55h4047 RA55H4047M download RA55 RF MOSFET MODULE

    RA07H4047M-101

    Abstract: ra07h4047m
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H4047M RoHS Compliance ,400-470MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H4047M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 400- to 470-MHz


    Original     		PDF RA07H4047M 400-470MHz RA07H4047M 470-MHz RA07H4047M-101

    Untitled

    Abstract: No abstract text available
    Text: FQPF5N40 N-Channel QFET MOSFET 400 V, 3.0 A, 1.6 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQPF5N40 O-220F

    Untitled

    Abstract: No abstract text available
    Text: FQP17N40 N-Channel QFET MOSFET 400 V, 16 A, 270 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQP17N40 O-220

    Untitled

    Abstract: No abstract text available
    Text: FQU5N40 N-Channel QFET MOSFET 400 V, 3.4 A, 1.6 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


    Original     		PDF FQU5N40

    Untitled

    Abstract: No abstract text available
    Text: FDA24N40F N-Channel UniFETTM FRFET MOSFET 400 V, 23 A, 190 mΩ Features Description • RDS on = 150 mΩ (Typ.) @ VGS = 10 V, ID = 11.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.


    Original     		PDF FDA24N40F 100nsec 200nsec

    Untitled

    Abstract: No abstract text available
    Text: FDP19N40 N-Channel UniFETTM MOSFET 400 V, 19 A, 240 mΩ Features Description • RDS on = 200 mΩ (Typ.) @ VGS = 10 V, ID = 9.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDP19N40

    Untitled

    Abstract: No abstract text available
    Text: FDD3N40 / FDU3N40 N-Channel UniFETTM MOSFET 400 V, 2 A, 3.4 Ω Features Description • RDS on = 3.4 Ω (Typ.) @ VGS = 10 V, ID = 1 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDD3N40 FDU3N40

    Untitled

    Abstract: No abstract text available
    Text: FDP24N40 N-Channel UniFETTM MOSFET 400 V, 24 A, 175 mΩ Features Description • RDS on = 140 mΩ (Typ.) @ VGS = 10 V, ID = 12 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDP24N40

    8N40

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N40 Preliminary Power MOSFET 8 A, 400 V N-CHANNEL POWER MOSFET 1 „ The UTC 8N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a


    Original     		PDF O-220 O-220F1 QW-R502-577 8N40

    12N40

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N40 Preliminary Power MOSFET 12 A, 400 V N-CHANNEL POWER MOSFET 1 „ The UTC 12N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a


    Original     		PDF 12N40 O-220 12N40 O-220F1 QW-R502-574

    2N6799

    Abstract: No abstract text available
    Text: POWER MOSFET TRANSISTORS 400 Volt, 1.0 Ohm N-Channel 2N6799 JTX, JTXV 2N6800 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosnm and a high transconductance. FEATURES


    OCR Scan     		PDF 2N6799 2N6800 2N6799

    UFN350

    Abstract: UFN351
    Text: UFN350 UFN351 UFN352 UFN353 POWER MOSFET TRANSISTORS 400 Volt, 0.3 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low RDscom and a high transconductance. FEATURES


    OCR Scan     		PDF UFN350 UFN351 UFN352 UFN353 UFN350 UFN351 UFN352