SiC POWER MOSFET
Abstract: sic MOSFET APTMC60TLM14CAG
Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 14mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode
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APTMC60TLM14CAG
SiC POWER MOSFET
sic MOSFET
APTMC60TLM14CAG
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Abstract: No abstract text available
Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode
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APTMC60TLM14CAG
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Untitled
Abstract: No abstract text available
Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode
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APTMC60TLM14CAG
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MRF185
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF185/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF185 The RF MOSFET Line RF POWER Field-Effect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N–CHANNEL BROADBAND RF POWER MOSFET N–Channel Enhancement–Mode Lateral MOSFET
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MRF185/D
MRF185
MRF185/D*
MRF185
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Abstract: No abstract text available
Text: PD - 97171 IRF7836PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage
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IRF7836PbF
EIA-481
EIA-541.
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IRF7836PBF
Abstract: No abstract text available
Text: PD - 97171 IRF7836PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage
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IRF7836PbF
EIA-481
EIA-541.
IRF7836PBF
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vcx 02 544
Abstract: No abstract text available
Text: FDC697P P-Channel 1.8V Specified Bottomless PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications.
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FDC697P
vcx 02 544
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AAT4280A-1
Abstract: SC70JW-8 AAT4250 AAT4280A
Text: PRODUCT DATASHEET AAT4280A SmartSwitchTM Slew Rate Controlled Load Switch General Description Features The AAT4280A SmartSwitch is a member of AnalogicTech’s Application Specific Power MOSFET ASPM™ product family. The AAT4280A is a P-channel MOSFET power
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AAT4280A
AAT4280A
AAT4250
AAT4280A-1
SC70JW-8
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AAT4280AIGU-4-T1
Abstract: AAT4250 AAT4280A AAT4280A-1 SC70JW-8
Text: PRODUCT DATASHEET AAT4280A SmartSwitchTM Slew Rate Controlled Load Switch General Description Features The AAT4280A SmartSwitch is a member of AnalogicTech’s Application Specific Power MOSFET ASPM™ product family. The AAT4280A is a P-channel MOSFET power
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AAT4280A
AAT4280A
AAT4250
AAT4280AIGU-4-T1
AAT4280A-1
SC70JW-8
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Untitled
Abstract: No abstract text available
Text: AOD210 30V N-Channel MOSFET General Description Product Summary The AOD210 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of
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AOD210
AOD210
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FLMP SuperSOT-6
Abstract: FDC697P
Text: FDC697P P-Channel 1.8V PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications. • –8 A, –20 V
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FDC697P
FLMP SuperSOT-6
FDC697P
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AOD210
Abstract: No abstract text available
Text: AOD210 30V N-Channel MOSFET General Description Product Summary The AOD210 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of
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AOD210
AOD210
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FLMP SuperSOT-6
Abstract: FDC697P FDC697P_F077 Supersot6
Text: FDC697P P-Channel 1.8V PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications. • –8 A, –20 V
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FDC697P
FDC697P
FLMP SuperSOT-6
FDC697P_F077
Supersot6
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3524 layout
Abstract: FDC697P P-Channel 1.8V MOSFET FLMP
Text: FDC697P P-Channel 1.8V PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications. • –8 A, –20 V
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FDC697P
3524 layout
FDC697P
P-Channel 1.8V MOSFET FLMP
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF154/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF154 N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz frequency range.
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MRF154/D
MRF154
MRF154/D*
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AN7254
Abstract: AN9321 AN9322 HUF75309T3ST TB334
Text: HUF75309T3ST Data Sheet 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in
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HUF75309T3ST
AN7254
AN9321
AN9322
HUF75309T3ST
TB334
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59E-1
Abstract: AN7254 AN7260 AN9321 AN9322 HUF75309T3ST TB334 TB337
Text: HUF75309T3ST Data Sheet June 1999 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET File Number 4377.3 Features • 3A, 55V This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF75309T3ST
59E-1
AN7254
AN7260
AN9321
AN9322
HUF75309T3ST
TB334
TB337
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Untitled
Abstract: No abstract text available
Text: AOT210L/AOB210L 30V N-Channel MOSFET General Description Product Summary The AOT210L/AOB210L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination
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AOT210L/AOB210L
AOT210L/AOB210L
O-263
GaAOT210L/AOB210L
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Untitled
Abstract: No abstract text available
Text: FDC3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDC3512
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Untitled
Abstract: No abstract text available
Text: AOT210L/AOB210L 30V N-Channel MOSFET General Description Product Summary The AOT210L/AOB210L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination
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AOT210L/AOB210L
AOT210L/AOB210L
O-263
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Untitled
Abstract: No abstract text available
Text: HUFA75309T3ST TM Data Sheet 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in
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HUFA75309T3ST
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AN9321
Abstract: AN9322 HUFA75309T3ST TB334
Text: HUFA75309T3ST Data Sheet 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in
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HUFA75309T3ST
HUFA75309T3ST
AN9321
AN9322
TB334
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FDC3512
Abstract: No abstract text available
Text: FDC3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDC3512
FDC3512
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HG62G
Abstract: HG71G154 hg62g051 HG62G019 HG71G063 HG71G HG71G030 HG62g014 HG51B HG62G035
Text: Wireless Communications ICs RF Power Amplifier Module Cellular Output PowerSupply Voltage Efficiency Part Number Standard W (V) (•/« Typ.) Technology 47% PF0025 AMPS 6.0 MOSFET 1.2 47% MOSFET PF0026 NMT900, TACS 1.2 6.0 PF0027 E-TACS 47% MOSFET 6.0 1.2
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PF0025
PF0026
NMT900,
PF0027
PF0030
PF0031
NMT900
PF0032
PF0040
PF0042
HG62G
HG71G154
hg62g051
HG62G019
HG71G063
HG71G
HG71G030
HG62g014
HG51B
HG62G035
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