IEC60747-8
Abstract: AN11158 nxp mosfet soa derating AN10273 iec60134
Text: AN11158 Understanding power MOSFET data sheet parameters Rev. 2 — 16 August 2012 Application note Document information Info Content Keywords MOSFET. Abstract This application note describes the content of power MOSFET data sheet parameters AN11158 NXP Semiconductors
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AN11158
AN11158
IEC60747-8
nxp mosfet soa derating
AN10273
iec60134
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Untitled
Abstract: No abstract text available
Text: AN11158 Understanding power MOSFET data sheet parameters Rev. 4 — 4 February 2014 Application note Document information Info Content Keywords MOSFET. Abstract This application note describes the content of power MOSFET data sheet parameters AN11158 NXP Semiconductors
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Text: AOT502 Clamped N-Channel MOSFET General Description Product Summary AOT502 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.
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Abstract: No abstract text available
Text: AN11158 Understanding power MOSFET data sheet parameters Rev. 3 — 7 January 2013 Application note Document information Info Content Keywords MOSFET. Abstract This application note describes the content of power MOSFET data sheet parameters AN11158 NXP Semiconductors
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AN11158
AN11158
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AOT502
Abstract: gate-drain zener 50E05 102-AX
Text: AOT502 Clamped N-Channel MOSFET General Description Product Summary AOT502 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.
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AOT502
AOT502
gate-drain zener
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"MOSFET Module"
Abstract: QJB0121002 MOSFET 50V 100A FS70UMJ-2 mosfet module
Text: QJB0121002 Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Four MOSFET Module 210 Amperes/100 Volts Description: Powerex power MOSFET Module designed specially for customer applications. Each module consists of four Mosfet transistors in an H-Bridge configuration with each
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QJB0121002
Amperes/100
FS70UMJ-2
QJB01210ce
-100A/
"MOSFET Module"
QJB0121002
MOSFET 50V 100A
mosfet module
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IRF8734PBF
Abstract: IRF8734TRPBF
Text: PD - 96226 IRF8734PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage
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IRF8734PbF
10formation:
IRF8734PBF
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Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT10N10 Power MOSFET 10A, 100V N-CHANNEL MOSFET DESCRIPTION The UTC UTT10N10 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed
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UTT10N10
UTT10N10
UTT10N10L-TM3-T
UTT10N10G-TM3-T
UTT10N10L-TN3-T
UTT10N10G-TN3-T
UTT10N10L-TN3-R
UTT10N10G-TNat
QW-R502-714
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FQD13N10
Abstract: No abstract text available
Text: FQD13N10 / FQU13N10 N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
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Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT10N10 Power MOSFET 10A, 100V N-CHANNEL MOSFET DESCRIPTION The UTC UTT10N10 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed
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UTT10N10
UTT10N10
UTT10N10L-TN3-R
UTT10N10G-TN3-R
UTT10N10L-TN3-T
UTT10N10G-TN3-T
QW-R502-714
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Untitled
Abstract: No abstract text available
Text: PD - 96226 IRF8734PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS on max Qg (typ.) 30V 3.5m @VGS = 10V 20nC 1 8 S 2 7 S 3
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10irf
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Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT10N10 Power MOSFET 10A, 100V N-CHANNEL MOSFET DESCRIPTION The UTC UTT10N10 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed
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UTT10N10
UTT10N10
UTT10N10L-TM3-T
UTT10N10G-TM3-T
UTT10N10L-TN3-T
UTT10N10G-TN3-T
UTT10N10L-TN3-R
UTT10N10G-TN3-R
QW-R502-714
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Untitled
Abstract: No abstract text available
Text: FQD13N10 / FQU13N10 N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
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Abstract: No abstract text available
Text: FQD13N10 N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
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BD6563FV-LB
Abstract: No abstract text available
Text: Datasheet Small Signal IGBT/MOSFET Gate Driver Series Three-Channel Small Signal IGBT/MOSFET Gate Drivers BD6563FV-LB ●General Description BD6563FV-LB is 3-ch gate driver to drive gate of IGBT/MOSFET from 5V input signals. Output signals consist of each high side and low side
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BD6563FV-LB
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Abstract: No abstract text available
Text: Datasheet Small Signal IGBT/MOSFET Gate Driver Series Three-Channel Small Signal IGBT/MOSFET Gate Drivers BD6563FV-LB General Description BD6563FV-LB is 3-ch gate driver to drive gate of IGBT/MOSFET from 5V input signals. Output signals consist of each high side and low side
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AN2386
Abstract: Atlas silvaco 14047 silvaco
Text: AN2386 Application note How to achieve the threshold voltage thermal coefficient of the MOSFET acting on design parameters Introduction Today, the MOSFET devices are used mainly as switches in electronic circuits. In such operational conditions, the MOSFET device works in switch on and switch off modes.
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AN2386
AN2386
Atlas silvaco
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Abstract: No abstract text available
Text: FDC86244 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 2.3 A, 144 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been
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Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT120P06 Power MOSFET 120A, 60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT120P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also
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UTT120P06L-TQ2-R
UTT120P06G-TQ2-R
QW-R502-728
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p-channel Mosfet 110A
Abstract: UTT120P06
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT120P06 Power MOSFET 120A, 60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT120P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also
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QW-R502-728
p-channel Mosfet 110A
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MO-240
Abstract: No abstract text available
Text: FDMC86244 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 9.4 A, 134 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been
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MO-240
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Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT16P10 Power MOSFET 100V, 16A P-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC UTT16P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can
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UTT16P10
O-252
UTT16P10L-TN3-R
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UTT16P10L-TN3-T
UTT16P10G-TN3-T
QW-R502-748
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Untitled
Abstract: No abstract text available
Text: FQP13N10 N-Channel QFET MOSFET 100 V, 12.8 A, 180 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to
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Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT25P06 Power MOSFET −60V, −27.5A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT25P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand
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UTT25P06
UTT25P06L-TA3-T
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UTT25P06L-TM3-T
UTT25P06G-TM3at
QW-R502-595
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