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    MOSFET 32N03S Search Results

    MOSFET 32N03S Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 32N03S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    32N03S

    Abstract: 32N03 mosfet 32n03s BSC032N03S BSC032N03S G IEC61249-2-21 JESD22
    Text: BSC032N03S G OptiMOS 2 Power-Transistor Product Summary Features V DS 30 V • Fast switching MOSFET for SMPS R DS on ,max 3.2 mΩ • Optimized technology for notebook DC/DC converters ID 100 A • Qualified according to JEDEC1 for target applications


    Original     		BSC032N03S IEC61249-2-21 32N03S 32N03S 32N03 mosfet 32n03s BSC032N03S G IEC61249-2-21 JESD22 PDF

    32N03

    Abstract: 32N03S mosfet 32n03s
    Text: BSC032N03S G OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 3.2 mΩ ID 100 A 1 • Qualified according to JEDEC for target applications


    Original     		BSC032N03S Q67045-A5006 32N03S 32N03 32N03S mosfet 32n03s PDF

    mosfet 32n03s

    Abstract: 32N03S 32N03
    Text: BSC032N03S G OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 3.2 mΩ ID 100 A 1 • Qualified according to JEDEC for target applications


    Original     		BSC032N03S 32N03S mosfet 32n03s 32N03S 32N03 PDF

    32N03

    Abstract: 32N03S SMPS 30 BSC032N03S G mosfet 32n03s BSC032N03S JESD22
    Text: BSC032N03S G OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 3.2 mΩ ID 100 A 1 • Qualified according to JEDEC for target applications


    Original     		BSC032N03S 32N03S 32N03 32N03S SMPS 30 BSC032N03S G mosfet 32n03s JESD22 PDF

    32n03s

    Abstract: 32N03 BSC032N03S G BSC032N03S JESD22 mosfet+32n03s
    Text: BSC032N03S G OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 3.2 mΩ ID 100 A 1 • Qualified according to JEDEC for target applications


    Original     		BSC032N03S 32N03S 32n03s 32N03 BSC032N03S G JESD22 mosfet+32n03s PDF

    32N03

    Abstract: 32N03S A5006 BSC032N03S JESD22
    Text: BSC032N03S G OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 3.2 mΩ ID 100 A 1 • Qualified according to JEDEC for target applications


    Original     		BSC032N03S Q67045-A5006 32N03S 32N03 32N03S A5006 JESD22 PDF

    32N03

    Abstract: 32N03S mosfet 32n03s G-TECH
    Text: BSC032N03S G OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 3.2 mΩ ID 100 A 1 • Qualified according to JEDEC for target applications


    Original     		BSC032N03S 32N03S 32N03 32N03S mosfet 32n03s G-TECH PDF

    32n03

    Abstract: 32N03S BSC032N03S JESD22
    Text: BSC032N03S OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 3.2 mΩ ID 50 A 1 • Qualified according to JEDEC for target applications • N-channel


    Original     		BSC032N03S Q67042-S4219 32N03S 32n03 32N03S BSC032N03S JESD22 PDF

    32N03

    Abstract: 32n03s BSC032N03S BSC032N03S G fet 5080 JESD22
    Text: BSC032N03S OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 3.2 mΩ ID 50 A 1 • Qualified according to JEDEC for target applications • N-channel


    Original     		BSC032N03S Q67042-S4219 32N03S 32N03 32n03s BSC032N03S BSC032N03S G fet 5080 JESD22 PDF

    32N03

    Abstract: 32n03s
    Text: BSC032N03S OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 3.2 mΩ ID 50 A 1 • Qualified according to JEDEC for target applications • N-channel


    Original     		BSC032N03S BSC032N03S Q67042-S4219 32N03S 32N03 32n03s PDF