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    MOSFET 3110 Search Results

    MOSFET 3110 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 3110 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3110 0001 mosfet

    Abstract: IRF7463
    Text: PD- 93843A IRF7463 SMPS MOSFET HEXFET Power MOSFET Applications High Frequency DC-DC Converters with Synchronous Rectification l VDSS RDS on max ID 30V 0.008Ω 14A Benefits Ultra-Low RDS(on) at 4.5V VGS l Low Charge and Low Gate Impedance to Reduce Switching Losses


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    PDF 3843A IRF7463 3110 0001 mosfet IRF7463

    driver 3110a

    Abstract: 3110a ADP3110AKRZ SOIC-8 mosfet 3110a MOSFET SO-8 ADP3110A NCP5381 NTD60N03
    Text: ADP3110A Dual Bootstrapped, 12 V MOSFET Driver with Output Disable The ADP3110A is a single Phase 12 V MOSFET gate drivers optimized to drive the gates of both high−side and low−side power MOSFETs in a synchronous buck converter. The high−side and low−side driver is capable of driving a 3000 pF load with a 25 ns


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    PDF ADP3110A ADP3110A ADP3110A/D driver 3110a 3110a ADP3110AKRZ SOIC-8 mosfet 3110a MOSFET SO-8 NCP5381 NTD60N03

    SOIC-8 mosfet 3110a

    Abstract: driver 3110a 3110A DFN8 3X3
    Text: ADP3110A Dual Bootstrapped, 12 V MOSFET Driver with Output Disable The ADP3110A is a single Phase 12 V MOSFET gate drivers optimized to drive the gates of both high−side and low−side power MOSFETs in a synchronous buck converter. The high−side and low−side driver is capable of driving a 3000 pF load with a 25 ns


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    PDF ADP3110A ADP3110A/D SOIC-8 mosfet 3110a driver 3110a 3110A DFN8 3X3

    Untitled

    Abstract: No abstract text available
    Text: ADP3110A Dual Bootstrapped, 12 V MOSFET Driver with Output Disable The ADP3110A is a single Phase 12 V MOSFET gate drivers optimized to drive the gates of both high−side and low−side power MOSFETs in a synchronous buck converter. The high−side and low−side driver is capable of driving a 3000 pF load with a 25 ns


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    PDF ADP3110A ADP3110A ADP3110A/D

    vfo 200v 0.4kw

    Abstract: dipipm dipipm application note
    Text: <Dual-In-Line Package Intelligent Power Module> MOSFET Super mini DIPIPM APPLICATION NOTE PSM03S93E5-A / PSM05S93E5-A Table of contents CHAPTER 1 INTRODUCTION .2


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    PDF PSM03S93E5-A PSM05S93E5-A vfo 200v 0.4kw dipipm dipipm application note

    spw -079 transformer

    Abstract: samsung galaxy s2 numeric digital 600 plus ups ckt diagram samsung galaxy s2 display Zener Diode ph 4148 ph 4148 zener diode CD4046 spice model DIODE SMD L4W lm2576 spice SN75492
    Text: Micrel Semiconductor 1997 Databook 1 _ General Information 2 _ Computer Peripherals 3 _ Low-Dropout Linear Voltage Regulators 4 _ Switch-Mode Voltage Regulators 5 _ MOSFET Drivers 6 _


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    PDF 1-06A spw -079 transformer samsung galaxy s2 numeric digital 600 plus ups ckt diagram samsung galaxy s2 display Zener Diode ph 4148 ph 4148 zener diode CD4046 spice model DIODE SMD L4W lm2576 spice SN75492

    TL494 car charger schematic diagram

    Abstract: samsung galaxy s2 controller for PWM fan tl494 1A current to 0-5v voltage converter using LM317 SMD LD33 capacitor huang 2200uF 35V uc3843 flyback supply opto-coupler SMD MOSFET DRIVE 4606 schematic lcd inverter samsung sine wave inverter tl494 circuit diagram
    Text: Micrel Semiconductor 1997 Databook 1 _ General Information 2 _ Computer Peripherals 3 _ Low-Dropout Linear Voltage Regulators 4 _ Switch-Mode Voltage Regulators 5 _ MOSFET Drivers 6 _


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    PDF accurat49565 TL494 car charger schematic diagram samsung galaxy s2 controller for PWM fan tl494 1A current to 0-5v voltage converter using LM317 SMD LD33 capacitor huang 2200uF 35V uc3843 flyback supply opto-coupler SMD MOSFET DRIVE 4606 schematic lcd inverter samsung sine wave inverter tl494 circuit diagram

    CA3130S

    Abstract: CA3160AS CA3160 single supply Wien Bridge Oscillator staircase generator circuit CA3160AT CA3160E ca3160ae staircase generator 3V to 300V dc dc converter
    Text: CA3160, CA3160A S E M I C O N D U C T O R 4MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output November 1996 Features Description • MOSFET Input Stage Provides: The CA3160A and CA3160 are integrated circuit operational amplifiers that combine the advantage of both CMOS and bipolar transistors on a monolithic chip. The CA3160 series are frequency compensated versions of the popular CA3130 series.


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    PDF CA3160, CA3160A CA3160A CA3160 CA3130 CA3160 125oC CA3130S CA3160AS single supply Wien Bridge Oscillator staircase generator circuit CA3160AT CA3160E ca3160ae staircase generator 3V to 300V dc dc converter

    TK12A10K3

    Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
    Text: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4


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    AUFP4004

    Abstract: No abstract text available
    Text: PD - 96407A AUTOMOTIVE GRADE AUIRFP4004 HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *


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    PDF 6407A AUIRFP4004 AUFP4004

    AUFP4004

    Abstract: No abstract text available
    Text: PD - 96407 AUTOMOTIVE GRADE AUIRFP4004 HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *


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    PDF AUIRFP4004 AUFP4004

    3110 0001 mosfet

    Abstract: IRFP4004PBF irfp4004 irf 3110 AN-994
    Text: PD - 97323 IRFP4004PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max. ID (Silicon Limited)


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    PDF IRFP4004PbF 350Ac O-247AC O-247AC 3110 0001 mosfet IRFP4004PBF irfp4004 irf 3110 AN-994

    AUFP4004

    Abstract: 3110 0001 mosfet AUIRFP4004 AN-994 TO-247AC
    Text: PD - 96407A AUTOMOTIVE GRADE AUIRFP4004 HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *


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    PDF 6407A AUIRFP4004 AUFP4004 3110 0001 mosfet AUIRFP4004 AN-994 TO-247AC

    irfp4004

    Abstract: No abstract text available
    Text: PD - 97323 IRFP4004PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max. ID (Silicon Limited)


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    PDF IRFP4004PbF 350Ac O-247AC O-247AC irfp4004

    3110 0001 mosfet

    Abstract: IRFH7107
    Text: PD - 97785 IRFH7107PbF HEXFET Power MOSFET VDS 75 V RDS on max 8.5 m Qg (typical) 48 nC RG (typical) 0.6  75 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications •Secondary Side Synchronous Rectification  Inverters for DC Motors


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    PDF IRFH7107PbF 3110 0001 mosfet IRFH7107

    Untitled

    Abstract: No abstract text available
    Text: PD - 97785 IRFH7107PbF HEXFET Power MOSFET VDS 75 V RDS on max 8.5 m Qg (typical) 48 nC RG (typical) 0.6  75 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications •Secondary Side Synchronous Rectification  Inverters for DC Motors


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    PDF IRFH7107PbF

    Untitled

    Abstract: No abstract text available
    Text: IRFH7107PbF HEXFET Power MOSFET VDS 75 V RDS on max 8.5 mΩ Qg (typical) 48 nC RG (typical) 0.6 Ω 75 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications


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    PDF IRFH7107PbF

    ic 4046

    Abstract: FSF250R1 FSF250R3 1E14 2E12 FSF250D FSF250D1 FSF250D3 FSF250R
    Text: FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


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    PDF FSF250D, FSF250R ic 4046 FSF250R1 FSF250R3 1E14 2E12 FSF250D FSF250D1 FSF250D3 FSF250R

    Untitled

    Abstract: No abstract text available
    Text: TK40S10K3Z MOSFET シリコンNチャネルMOS形 U-MOS  TK40S10K3Z 1. 用途 • 車載用 • モータドライブ用 • DC-DCコンバータ用 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 14.4 mΩ (標準) (VGS = 10 V)


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    PDF TK40S10K3Z

    Untitled

    Abstract: No abstract text available
    Text: MODULES FOR STEPPER MOTORS MODULES Hardware Version V1.1 HARDWARE MANUAL + + TMCM-3110 3-Axis Stepper Controller / Driver 2.8 A / 48 V USB, RS485, and CAN Step/Dir Interface Encoder Interface + TRINAMIC Motion Control GmbH & Co. KG Hamburg, Germany www.trinamic.com


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    PDF TMCM-3110 RS485, TMCM-3110 2012-MAY-25 2012-AUG-17 USB-2-485] TMC262] TMC429]

    Untitled

    Abstract: No abstract text available
    Text: ¡2 h a r r C A 3140A CA3140 i s BiMOS Operational Amplifiers with MOSFET Input/Bipolar Output August 1 9 9 1 Features D escription • MOSFET Input Stage The CA3140A and CA3140 are integrated-circuit operational amplifiers that combine the advantages of highvoltage PMOS transistors with high-voltage bipolar


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    PDF CA3140 CA3140A CA3140 CA3130

    2 volt zener

    Abstract: CA314Q REGULATOR IC 7915 CA3140S power supply in ic 7915 circuit diagram ano51 D2201 IC Generator to 10MHz triangle CS27a ca314 DE
    Text: HA RR IS S E M I C O N D S E C T O R H a r r i 4QE ]> • 4302571 0031746 7 BIHAS T-K-IS s C A 3 1 4 0 A C A 3 1 4 0 BiMOS Operational Amplifiers with MOSFET Input/Bipolar Output August 19 9 1 Features Description • MOSFET input Stage The CA3140A and CA3140 are Integrated-circutt


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    PDF CA3140A CA3140 CA3130 CA3140H. 2 volt zener CA314Q REGULATOR IC 7915 CA3140S power supply in ic 7915 circuit diagram ano51 D2201 IC Generator to 10MHz triangle CS27a ca314 DE

    3160E

    Abstract: CA3160AT 4007A CA 3140 OP AMP mospet
    Text: & CA3160, CA3160A 4MHz, BiMOS Operational Amplifier W Î t t l MOSPET Inpilt/CMOS OlltpUt November 1996 Features Description • MOSFET Input Stage Provides: The CA3160A and CA3160 are integrated circuit operational amplifiers that combine the advantage of both CMOS and bipo­


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    PDF CA3160, CA3160A CA3160A CA3160 CA3130 3160E CA3160AT 4007A CA 3140 OP AMP mospet

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


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