Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOSFET 303 Search Results

    MOSFET 303 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 303 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G3VM-41LR10

    Abstract: mosfet 407
    Text: Omron 08 Cat 303-464 5/10/07 15:48 Page 404 MOSFET Relay – G3VM-41LR6 Text Text MOSFET Relays – G3VM-41LR10 World’s Smallest SSOP Package MOSFET Relays COFF (typical : 0.45 pF, RON (typical): 12 Ω) with Low Output Capacitance and ON Resistance (CxR = 5 pF•Ω) in a 40-V


    Original     		PDF G3VM-41LR6 G3VM-41LR10 G3VM-41LR11 J964-E2-01 G3VM-41LR10 mosfet 407

    Untitled

    Abstract: No abstract text available
    Text: NCP5338 Integrated Driver and MOSFET The NCP5338 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP5338


    Original     		PDF NCP5338 NCP5338 NCP5338/D

    QFN40

    Abstract: application note gate driver with bootstrap capacitor PGND19
    Text: NCP5369 Integrated Driver and MOSFET The NCP5369 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP5369


    Original     		PDF NCP5369 NCP5369 40-pin QFN40 NCP5369/D QFN40 application note gate driver with bootstrap capacitor PGND19

    Untitled

    Abstract: No abstract text available
    Text: NCP5369 Integrated Driver and MOSFET The NCP5369 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP5369


    Original     		PDF NCP5369 NCP5369 NCP5369/D

    ncp53

    Abstract: QFN-40
    Text: NCP5369 Integrated Driver and MOSFET The NCP5369 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP5369


    Original     		PDF NCP5369 40-pin QFN40 485AZ NCP5369/D ncp53 QFN-40

    QFN56 footprint

    Abstract: bootstrap diode ncp53 NCP5360R
    Text: NCP5360R Integrated Driver and MOSFET The NCP5360R integrates a MOSFET driver, high-side MOSFET and low-side MOSFET into a 8mm x 8mm 56-pin QFN package. The driver and MOSFETs have been optimized for high-current DC-DC buck power conversion applications. The NCP5360R integrated


    Original     		PDF NCP5360R 56-pin NCP5360R/D QFN56 footprint bootstrap diode ncp53

    Untitled

    Abstract: No abstract text available
    Text: NCP5360R Integrated Driver and MOSFET The NCP5360R integrates a MOSFET driver, high-side MOSFET and low-side MOSFET into a 8mm x 8mm 56-pin QFN package. The driver and MOSFETs have been optimized for high-current DC-DC buck power conversion applications. The NCP5360R integrated


    Original     		PDF NCP5360R NCP5360R 56-pin NCP5360R/D

    Untitled

    Abstract: No abstract text available
    Text: NCP81081 Integrated Driver and MOSFET The NCP81081 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP81081


    Original     		PDF NCP81081 40-pin QFN40 NCP81081/D

    Untitled

    Abstract: No abstract text available
    Text: NCP5360A Integrated Driver and MOSFET The NCP5360A integrates a MOSFET driver, high-side MOSFET and low-side MOSFET into a 8mm x 8mm 56-pin QFN package. The driver and MOSFETs have been optimized for high-current DC-DC buck power conversion applications. The NCP5360A integrated


    Original     		PDF NCP5360A NCP5360A 56-pin QFN56 485AY NCP5360A/D

    Untitled

    Abstract: No abstract text available
    Text: NCP5369 Integrated Driver and MOSFET The NCP5369 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP5369


    Original     		PDF NCP5369 40-pin QFN40 485AZ NCP5369/D

    Untitled

    Abstract: No abstract text available
    Text: NCP5338 Integrated Driver and MOSFET The NCP5338 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP5338


    Original     		PDF NCP5338 40-pin NCP5338/D

    Untitled

    Abstract: No abstract text available
    Text: NCP5338 Integrated Driver and MOSFET The NCP5338 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP5338


    Original     		PDF NCP5338 NCP5338 NCP5338/D

    Untitled

    Abstract: No abstract text available
    Text: FDP75N08A N-Channel UniFETTM MOSFET 75 V, 75 A, 11 mΩ Description Features • • • • • UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDP75N08A O-220

    Untitled

    Abstract: No abstract text available
    Text: NCP5366 Integrated Driver and MOSFET The NCP5366 integrates a MOSFET driver, high-side MOSFET and low-side MOSFET into a 6mm x 6mm 40-pin QFN package. The driver and MOSFETs have been optimized for high-current DC-DC buck power conversion applications. The NCP5366 integrated


    Original     		PDF NCP5366 NCP5366 40-pin NCP5366/D

    AN799 Matching MOSFET Drivers to MOSFETs

    Abstract: an799 an799 microchip IRF450A TC4424 motor driver Matching MOSFET Drivers to MOSFETs TC4431 application TC4420 die MOSFET TEST SIMPLE Procedures TC4424
    Text: AN799 Matching MOSFET Drivers to MOSFETs INTRODUCTION V+ Microchip offers many sizes of MOSFET drivers. This allows the designer to best match the switching performance of the driver/ MOSFET to the application. TC4424 MOSFET DIE SIZES Unlike bipolar transistors in which die size is primarily a function of


    Original     		PDF AN799 TC4424 D-81739 DS00799A* DS00799A-page AN799 Matching MOSFET Drivers to MOSFETs an799 an799 microchip IRF450A TC4424 motor driver Matching MOSFET Drivers to MOSFETs TC4431 application TC4420 die MOSFET TEST SIMPLE Procedures TC4424

    Untitled

    Abstract: No abstract text available
    Text: SCH2805 SCH2805 Features Ordering number : ENN7760 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET MCH3314 and a Schottky barrier diode (SB0105)


    Original     		PDF SCH2805 ENN7760 MCH3314) SB0105) SCH2805/D

    Untitled

    Abstract: No abstract text available
    Text: SCH2819 SCH2819 Ordering number : ENN8291 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-Channel Silicon MOSFET SCH1419 and a Schottky Barrier Diode (SS0503)


    Original     		PDF SCH2819 ENN8291 SCH1419) SS0503) SCH2819/D

    2P50EG

    Abstract: 2P50 2p50e AN569 MTP2P50E MTP2P50EG mosfet transistor 400 volts.100 amperes
    Text: MTP2P50E Power MOSFET 2 Amps, 500 Volts P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed


    Original     		PDF MTP2P50E O-220 MTP2P50E/D 2P50EG 2P50 2p50e AN569 MTP2P50E MTP2P50EG mosfet transistor 400 volts.100 amperes

    Untitled

    Abstract: No abstract text available
    Text: MTP2P50E Power MOSFET 2 Amps, 500 Volts P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed


    Original     		PDF MTP2P50E MTP2P50E/D

    IRFM054

    Abstract: SHD218501 SHD218501A SHD218501B
    Text: SHD218501 SHD218501A SHD218501B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 303, REV. B Formerly Part Number SHD2181/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 60 Volt, 0.027 Ohm, 45A MOSFET • Isolated Hermetic Metal Package • Fast Switching


    Original     		PDF SHD218501 SHD218501A SHD218501B SHD2181/A/B IRFM054 SHD218501 SHD218501A SHD218501B

    Untitled

    Abstract: No abstract text available
    Text: SCH2809 SCH2809 Features • • • Ordering number : ENA0446 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET SCH1305 and a Schottky barrier diode (SBS018) contained


    Original     		PDF SCH2809 ENA0446 SCH1305) SBS018) SCH2809/D

    Amp. mosfet 1000 watt

    Abstract: AN569 MTB2P50E MTB2P50ET4 mosfet transistor 400 volts.100 amperes
    Text: MTB2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed


    Original     		PDF MTB2P50E MTB2P50E/D Amp. mosfet 1000 watt AN569 MTB2P50E MTB2P50ET4 mosfet transistor 400 volts.100 amperes

    t2p50e

    Abstract: p50eg AN569 MTB2P50E MTB2P50ET4 MTB2P50ET4G mosfet transistor 400 volts.100 amperes ww h 845 1 r
    Text: MTB2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed


    Original     		PDF MTB2P50E MTB2P50E/D t2p50e p50eg AN569 MTB2P50E MTB2P50ET4 MTB2P50ET4G mosfet transistor 400 volts.100 amperes ww h 845 1 r

    AN569

    Abstract: MTP1N50E mtp1n
    Text: MTP1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N–Channel TO–220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, the MOSFET is designed to


    Original     		PDF MTP1N50E r14525 MTP1N50E/D AN569 MTP1N50E mtp1n