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    MOSFET 2N7000 Search Results

    MOSFET 2N7000 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 2N7000 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MOSFET P-channel SOT-23

    Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
    Text: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26


    Original     		2N7000 2N7002L MOSFET60 OT-23 BS107, BS107A BS108 BS170 NUD3124 NUD3160 MOSFET P-channel SOT-23 NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N PDF

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS PDF

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


    Original     		2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent PDF

    2N7000

    Abstract: 2n7000 data sheet 2n7000 equivalent mosfet motor dc 48v
    Text: DC COMPONENTS CO., LTD. 2N7000 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL SMALL SIGNAL MOSFET Description Designed for low voltage and low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.


    Original     		2N7000 500mA, 200mA 2N7000 2n7000 data sheet 2n7000 equivalent mosfet motor dc 48v PDF

    IXDD 614

    Abstract: BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS
    Text: APPLICATION NOTE AN0002 MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS By Abhijit D. Pathak 1. Introduction 1.1. MOSFET and IGBT Technology. 1.2. MOSFET Models and critical parameters 1.3. Turn-on and Turn-off phenomenon and their explanations 1.4. Power losses in Drivers


    Original     		AN0002 RH159NB D-68623; IXDD 614 BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS PDF

    IXAN0010

    Abstract: 0010 ixan0010 4 ixan0010 2 MOSFET IGBT DRIVERS THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS 18V, 400mW Zener diodes protect mosfet igbt drivers theory IXDD408 IXDD
    Text: IXAN0010 MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS By Abhijit D. Pathak 1. Introduction 1.1. MOSFET and IGBT Technology. 1.2. MOSFET Models and critical parameters 1.3. Turn-on and Turn-off phenomenon and their explanations 1.4. Power losses in Drivers 2. Types of Drivers


    Original     		IXAN0010 D-68623; IXAN0010 0010 ixan0010 4 ixan0010 2 MOSFET IGBT DRIVERS THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS 18V, 400mW Zener diodes protect mosfet igbt drivers theory IXDD408 IXDD PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFET 2N7000 MOSFET N-Channel TO-92 FEATURES z z z z 1. SOURCE High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability


    Original     		2N7000 500mA 200mA 500mA, 500mA 2N7000 PDF

    RL30A

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFET 2N7000 MOSFET N-Channel TO-92 FEATURES z z z z 1. SOURCE High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability


    Original     		2N7000 500mA 200mA 500mA, 500mA RL30A PDF

    low vgs mosfet to-92

    Abstract: mosfet to92 2N7000zg
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N7000Z Power MOSFET 115m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET „ DESCRIPTION 1 The UTC 2N7000Z has been designed to minimize on-state resistance to provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to


    Original     		2N7000Z 2N7000Z 400mA QW-R502-535 low vgs mosfet to-92 mosfet to92 2N7000zg PDF

    2n7000 smd

    Abstract: No abstract text available
    Text: MOSFET SMD Type N-Channel Enhancement Mode MOSFET 2N7000 SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● High density cell design for low RDS ON +0.1 1.3-0.1 +0.1 2.4-0.1 ● Voltage controlled small signal switch 0.4 3 1 ● High saturation current capability


    Original     		2N7000 OT-23 2n7000 smd PDF

    bs170kl

    Abstract: No abstract text available
    Text: 2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) VGS(th) (V) 2 at VGS = 10 V • TrenchFET Power MOSFET ID (A) 1.0 to 2.5 60 4 at VGS = 4.5 V Pb-free • ESD Protected: 2000 V 0.47 Available RoHS*


    Original     		2N7000KL/BS170KL O-226AA 7000KL O-92-18RM 170KL 08-Apr-05 bs170kl PDF

    2N7000KL-TR1-E3

    Abstract: BS170KL-TR1 170KL 2N7000KL-TR1 BS170KL-TR1-E3 rohs marking code vishay SILICONIX
    Text: 2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) VGS(th) (V) 2 at VGS = 10 V • TrenchFET Power MOSFET ID (A) 1.0 to 2.5 60 4 at VGS = 4.5 V Pb-free • ESD Protected: 2000 V 0.47 Available RoHS*


    Original     		2N7000KL/BS170KL O-226AA O-92-18RM 7000KL 18-Jul-08 2N7000KL-TR1-E3 BS170KL-TR1 170KL 2N7000KL-TR1 BS170KL-TR1-E3 rohs marking code vishay SILICONIX PDF

    170KL

    Abstract: BS170KL-TR1-E3 BS170KL-TR1 7000KL 2N7000KL-TR1 2N7000KL-TR1-E3 LOGO TD Display 2N7000KL
    Text: 2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) VGS(th) (V) 2 at VGS = 10 V • TrenchFET Power MOSFET ID (A) 1.0 to 2.5 60 4 at VGS = 4.5 V Pb-free • ESD Protected: 2000 V 0.47 Available RoHS*


    Original     		2N7000KL/BS170KL O-226AA O-92-18RM 7000KL 170KL BS170KL-TR1-E3 BS170KL-TR1 7000KL 2N7000KL-TR1 2N7000KL-TR1-E3 LOGO TD Display 2N7000KL PDF

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate MOSFET 2N7000 MOSFET N-Channel TO-92 FEATURES z z z z 1. SOURCE High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability 2. GATE 3. DRAIN 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted


    Original     		2N7000 500mA 200mA 500mA, 500mA 2N7000 PDF

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A PDF

    S1095

    Abstract: NTP13N10
    Text: ON Semiconductor Selector Guide − Power MOSFET Products MOSFET − Through−Hole RDS on Max (W) @ VGS = VDSS (V) 10 V 4.5 V/5.0 V* 2.5 V/2.7 V* 1.8 V QT Typ (nC) @ VGS = 4.5 V (5.0 V)/10 V* Max Rating Config. Page No. VN2222LL S 1095 0.35 2N7000 S 26 0.35


    Original     		VN2222LL 2N7000 BS170 BS107 BS108 BS107A VN2410L O-220AB NTP125N02R NTP90N02 S1095 NTP13N10 PDF

    2N7000 MOSFET

    Abstract: 2n7000 equivalents 2N7000 2N7002 MARKING 2n7000 equivalent 2N7000G 2N7002 JESD97
    Text: 2N7000 2N7002 N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID 2N7000 60V <5Ω (@10V) 0.35 2N7002 60V <5Ω (@10V) 0.20 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Description This MOSFET is the second generation of


    Original     		2N7000 2N7002 OT23-3L OT23-3L 2N7000 MOSFET 2n7000 equivalents 2N7000 2N7002 MARKING 2n7000 equivalent 2N7000G 2N7002 JESD97 PDF

    BS170KL

    Abstract: 170KL 2n7000kl equivalent 2N7000KL-TR1 BS170KL-TR1 2N7000KL RG173
    Text: 2N7000KL/BS170KL Vishay Siliconix New Product N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) VGS(th) (V) rDS(on) (W) 2 @ VGS = 10 V 60 TO-226AA (TO-92) G D 1 0.47 1 0 to 2 1.0 2.5 5 4 @ VGS = 4.5 V S ID (A) 0.33 D TrenchFETr Power MOSFET D ESD Protected: 2000 V


    Original     		2N7000KL/BS170KL O-226AA O-92-18RM 7000KL 170KL S-40247--Rev. 16-Feb-04 BS170KL 170KL 2n7000kl equivalent 2N7000KL-TR1 BS170KL-TR1 2N7000KL RG173 PDF

    2N7000KL

    Abstract: 170KL BS170KL-TR1 2N7000KL-TR1
    Text: 2N7000KL/BS170KL Vishay Siliconix New Product N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) VGS(th) (V) rDS(on) (W) 2 @ VGS = 10 V 60 TO-226AA (TO-92) G D 1 0.47 1 0 to 2 1.0 2.5 5 4 @ VGS = 4.5 V S ID (A) 0.33 D TrenchFETr Power MOSFET D ESD Protected: 2000 V


    Original     		2N7000KL/BS170KL O-226AA O-92-18RM 7000KL 170KL 08-Apr-05 2N7000KL 170KL BS170KL-TR1 2N7000KL-TR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7000K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES 2009. 11. 17 Revision No : 1 1/4


    Original     		2N7000K PDF

    2N7000

    Abstract: MTN7000A3 122n7000
    Text: Spec. No. : C325A3 Issued Date : 2004.02.13 Revised Date : . . Page No. : 1/4 CYStech Electronics Corp. N-CHANNEL MOSFET MTN7000A3 Description The MTN7000A3 is a N-channel enhancement-mode MOSFET. Symbol Outline MTN7000A3 TO-92 G：Gate S：Source D：Drain


    Original     		C325A3 MTN7000A3 MTN7000A3 UL94V-0 2N7000 122n7000 PDF

    Untitled

    Abstract: No abstract text available
    Text: RT9602 Dual Channel Synchronous-Rectified Buck MOSFET Driver General Description Features The RT9602 is a dual power channel MOSFET driver specifically designed to drive four power N-Channel MOSFETs in a synchronous-rectified buck converter topology. These drivers combined with RT9237/A and


    Original     		RT9602 RT9602 RT9237/A RT9241A/B 3000pF 14-Lead DS9602-05 PDF

    PHB83N03

    Abstract: rt9809 2N7000 PHB83N03LT PHB95N03LT RT9602 RT9809-20CV mosfet short circuit protection schematic diagram UGATE atx power supply pwm ic
    Text: RT9602 Dual Channel Synchronous-Rectified Buck MOSFET Driver General Description Features The RT9602 is a dual power channel MOSFET driver specifically designed to drive four power N-Channel MOSFETs in a synchronous-rectified buck converter topology. These drivers combined with RT9237/A and


    Original     		RT9602 RT9602 RT9237/A RT9241A/B 3000pF 14-Lead DS9602-08 PHB83N03 rt9809 2N7000 PHB83N03LT PHB95N03LT RT9809-20CV mosfet short circuit protection schematic diagram UGATE atx power supply pwm ic PDF

    2N7000 series protection

    Abstract: No abstract text available
    Text: RT9602 Dual Channel Synchronous-Rectified Buck MOSFET Driver General Description Features The RT9602 is a dual power channel MOSFET driver specifically designed to drive four power N-Channel MOSFETs in a synchronous-rectified buck converter topology. These drivers combined with RT9237/A and


    Original     		RT9602 RT9602 RT9237/A RT9241A/B 3000pF DS9602-09 2N7000 series protection PDF