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    MOSFET 26 Search Results

    MOSFET 26 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 26 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOSFET P-channel SOT-23

    Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
    Text: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26


    Original     		PDF 2N7000 2N7002L MOSFET60 OT-23 BS107, BS107A BS108 BS170 NUD3124 NUD3160 MOSFET P-channel SOT-23 NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N

    Untitled

    Abstract: No abstract text available
    Text: FDP26N40 N-Channel UniFETTM MOSFET 400 V, 26 A, 160 m Features Description UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDP26N40 FDP26N40

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    Untitled

    Abstract: No abstract text available
    Text: FDB52N20 N-Channel UniFETTM MOSFET 200 V, 52 A, 49 mΩ Features Description • RDS on = 49 mΩ (Max.) @ VGS = 10 V, ID = 26 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDB52N20

    Fda18n50

    Abstract: No abstract text available
    Text: FDA18N50 N-Channel UniFETTM MOSFET 500 V, 19 A, 265 m Features Description • RDS on = 265 m (Max.) @ VGS = 10 V, ID = 9.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDA18N50 Fda18n50

    Untitled

    Abstract: No abstract text available
    Text: FDP26N40 N-Channel UniFETTM MOSFET 400 V, 26 A, 160 mΩ Features Description • RDS on = 130 mΩ (Typ.) @ VGS = 10 V, ID = 13 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDP26N40

    FDA18N50

    Abstract: No abstract text available
    Text: FDA18N50 N-Channel UniFETTM MOSFET 500 V, 19 A, 265 m Features Description • RDS on = 265 m (Max.) @ VGS = 10 V, ID = 9.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDA18N50 FDA18N50

    General Semiconductor diode marking 49

    Abstract: No abstract text available
    Text: FDB52N20 N-Channel UniFETTM MOSFET 500 V, 52 A, 49 m Features Description • RDS on = 49 m (Max.) VGS = 10 V, ID = 26 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDB52N20 FDB52N20 General Semiconductor diode marking 49

    Untitled

    Abstract: No abstract text available
    Text: FDB52N20 N-Channel UniFETTM MOSFET 200 V, 52 A, 49 m Features Description • RDS on = 49 m (Max.) VGS = 10 V, ID = 26 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDB52N20

    Untitled

    Abstract: No abstract text available
    Text: 1.5V Drive Nch+Pch MOSFET US6M11 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).


    Original     		PDF US6M11 R0039A

    Untitled

    Abstract: No abstract text available
    Text: 1.5V Drive Nch+Pch MOSFET US6M11 zDimensions Unit : mm zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).


    Original     		PDF US6M11 R0039A

    QS6M4

    Abstract: No abstract text available
    Text: QS6M4 QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 zDimensions Unit : mm zStructure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package.


    Original     		PDF

    J239

    Abstract: motorola J122 A113 MRF9002R2 RO4350 mosfet j133 motorola rf Power Transistor j122 mosfet J104 MOSFET J239 mosfet transistor
    Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N–Channel Enhancement–Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET


    Original     		PDF MRF9002R2/D MRF9002R2 J239 motorola J122 A113 MRF9002R2 RO4350 mosfet j133 motorola rf Power Transistor j122 mosfet J104 MOSFET J239 mosfet transistor

    motorola rf Power Transistor

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET


    Original     		PDF MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D motorola rf Power Transistor

    Untitled

    Abstract: No abstract text available
    Text: FCP260N60E / FCPF260N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 15 A, 260 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing


    Original     		PDF FCP260N60E FCPF260N60E

    Untitled

    Abstract: No abstract text available
    Text: FQPF47P06 P-Channel QFET MOSFET -60 V, -30 A, 26 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		PDF FQPF47P06 FQPF47P06

    FQP55N10

    Abstract: No abstract text available
    Text: FQP55N10 N-Channel QFET MOSFET 100 V, 55 A, 26 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		PDF FQP55N10 FQP55N10

    FQP47P06

    Abstract: No abstract text available
    Text: FQP47P06 P-Channel QFET MOSFET - 60 V, - 47 A, 26 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconducto®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		PDF FQP47P06 FQP47P06

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF740 Power MOSFET 10A, 400V, 0.55Ω N-CHANNEL POWER MOSFET „ TO-263 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,


    Original     		PDF UF740 O-263 O-220 O-220F O-220F2 UF740L-TA3-T UF740G-TA3-T UF740L-TF2-T UF740G-TF2-T UF74at

    Untitled

    Abstract: No abstract text available
    Text: FQB47P06 / FQI47P06 P-Channel QFET MOSFET -60 V, -47 A, 26 mΩ Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQB47P06 FQI47P06 FQI47P06

    Untitled

    Abstract: No abstract text available
    Text: FQPF47P06 / FQPF47P06YDTU P-Channel QFET MOSFET -60 V, -30 A, 26 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		PDF FQPF47P06 FQPF47P06YDTU

    Untitled

    Abstract: No abstract text available
    Text: FQB55N10 / FQI55N10 N-Channel QFET MOSFET 100 V, 55 A, 26 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQB55N10 FQI55N10 FQI55N10

    Untitled

    Abstract: No abstract text available
    Text: FCP260N60E / FCPF260N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 15 A, 260 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing


    Original     		PDF FCP260N60E FCPF260N60E

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 26N50 Preliminary Power MOSFET 26A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 26N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original     		PDF 26N50 26N50 QW-R502-789