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    MOSFET 20V 45A Search Results

    MOSFET 20V 45A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 20V 45A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AOD424

    Abstract: PF7000
    Text: AOD424 20V N-Channel MOSFET General Description Product Summary The AOD424 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.


    Original     		PDF AOD424 AOD424 PF7000

    AOL1404

    Abstract: No abstract text available
    Text: AOL1404 20V N-Channel MOSFET General Description Product Summary The AOL1404 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.


    Original     		PDF AOL1404 AOL1404

    Untitled

    Abstract: No abstract text available
    Text: AOL1404 20V N-Channel MOSFET General Description Product Summary The AOL1404 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.


    Original     		PDF AOL1404 AOL1404

    Untitled

    Abstract: No abstract text available
    Text: AOD424 20V N-Channel MOSFET General Description Product Summary The AOD424 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.


    Original     		PDF AOD424 AOD424 19ABCDEF

    Untitled

    Abstract: No abstract text available
    Text: AP9918GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID Low on-resistance Capable of 2.5V gate drive Low drive current 20V 14m 45A Surface mount package Description Advanced Power MOSFETs from APEC provide the


    Original     		PDF AP9918GH/J O-252 O-251 O-251 9918GJ

    9918GH

    Abstract: AP9918GH marking codes transistors SSs
    Text: AP9918GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Low drive current N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID D 20V 14mΩ 45A G ▼ Surface mount package S Description


    Original     		PDF AP9918GH/J O-252 O-251 O-251 9918GJ 9918GH AP9918GH marking codes transistors SSs

    Untitled

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM32420LA-S •General description ■Features ELM32420LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=20V Id=45A Rds(on) < 14mΩ (Vgs=5V) Rds(on) < 26mΩ (Vgs=2.5V)


    Original     		PDF ELM32420LA-S ELM32420LA-S P1402CDG O-252

    AP9918GH

    Abstract: No abstract text available
    Text: AP9918GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low on-resistance N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 20V ▼ Capable of 2.5V gate drive RDS ON 14mΩ ▼ Low drive current ID D 45A G ▼ Surface mount package S Description


    Original     		PDF AP9918GH/J O-252 O-251 AP9918GH

    Untitled

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM32420LA-S •General description ■Features ELM32420LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=20V Id=45A Rds(on) < 14mΩ (Vgs=5V) Rds(on) < 26mΩ (Vgs=2.5V)


    Original     		PDF ELM32420LA-S ELM32420LA-S P1402CDG O-252

    ELM32420LA

    Abstract: No abstract text available
    Text: 单 N 沟道 MOSFET ELM32420LA-S •概要 ■特点 ELM32420LA-S 是 N 沟道低输入电容，低工作电压， •Vds=20V 低导通电阻的大电流 MOSFET。 ·Id=45A ·Rds on < 14mΩ (Vgs=5V) ·Rds(on) < 26mΩ (Vgs=2.5V) ■绝对最大额定值 项目


    Original     		PDF ELM32420LA-S P1402CDG O-252 ELM32420LA

    STV160NF02LA

    Abstract: No abstract text available
    Text: STV160NF02LA N-CHANNEL 20V - 0.0018Ω - 160A PowerSO-10 STripFET POWER MOSFET TYPE STV160NF02LA VDSS RDS on ID 20 V < 0.0027 Ω 160 A TYPICAL RDS(on) = 0.0018 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING 100% AVALANCHE TESTED


    Original     		PDF STV160NF02LA PowerSO-10 PowerSO-10 STV160NF02LA

    9918h

    Abstract: SSM9918H
    Text: SSM9918H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance D Capable of 2.5V gate drive BV DSS 20V R DS ON 14mΩ ID Low drive current 45A G Surface mount package S Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching,


    Original     		PDF SSM9918H O-252 O-251 9918h

    AP9918H

    Abstract: No abstract text available
    Text: AP9918H/J Advanced Power Electronics Corp. ▼ Low on-resistance N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Capable of 2.5V gate drive ▼ Low drive current BVDSS 20V RDS ON 14mΩ ID 45A G ▼ Surface mount package S Description The Advanced Power MOSFETs from APEC provide the


    Original     		PDF AP9918H/J O-252 O-251 AP9918H

    STV160NF02LA

    Abstract: No abstract text available
    Text: STV160NF02LA N-CHANNEL 20V - 0.0018Ω - 160A PowerSO-10 STripFET POWER MOSFET TYPE STV160NF02LA • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 20 V < 0.0027 Ω 160 A TYPICAL RDS(on) = 0.0018 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING


    Original     		PDF STV160NF02LA PowerSO-10 PowerSO-10 STV160NF02LA

    Untitled

    Abstract: No abstract text available
    Text: STV160NF02LA N-CHANNEL 20V - 0.0018Ω - 160A PowerSO-10 STripFET POWER MOSFET TYPE STV160NF02LA • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 20 V < 0.0027 Ω 160 A TYPICAL RDS(on) = 0.0018 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING


    Original     		PDF PowerSO-10 STV160NF02LA STV160NF02LA STV160NF02LAT4

    Untitled

    Abstract: No abstract text available
    Text: STV160NF02LA N-CHANNEL 20V - 0.0016Ω - 160A PowerSO-10 STripFET POWER MOSFET TYPE STV160NF02LA • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 20 V < 0.0025 Ω 160 A TYPICAL RDS(on) = 0.0016 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING


    Original     		PDF STV160NF02LA PowerSO-10 PowerSO-10 STV160NF02LA

    STV160NF02L

    Abstract: No abstract text available
    Text: STV160NF02L  N - CHANNEL 20V - 0.0016Ω - 160A PowerSO-10 STripFET MOSFET TYPE STV160NF02L • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 20 V < 0.0025 Ω 160 A TYPICAL RDS(on) = 0.0016 Ω ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING 100% AVALANCHE TESTED


    Original     		PDF STV160NF02L PowerSO-10 PowerSO-10 STV160NF02L

    STV160NF02L

    Abstract: motherboard schematic diagram
    Text: STV160NF02L N-CHANNEL 20V - 0.0016Ω - 160A PowerSO-10 STripFET POWER MOSFET TYPE STV160NF02L • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 20 V < 0.0025 Ω 160 A TYPICAL RDS(on) = 0.0016 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING


    Original     		PDF STV160NF02L PowerSO-10 PowerSO-10 STV160NF02L motherboard schematic diagram

    Untitled

    Abstract: No abstract text available
    Text: STB130NH02L N-CHANNEL 20V - 0.0034 Ω - 90A D2PAK STripFET III POWER MOSFET FOR DC-DC CONVERSION TYPE STB130NH02L • ■ ■ ■ ■ ■ VDSS R DS on ID 20 V < 0.0044 Ω 90 A(#) TYPICAL RDS(on) = 0.0034 Ω @ 10 V RDS(ON) * Qg INDUSTRY’s BENCHMARK


    Original     		PDF STB130NH02L O-263) O-263 STB130NH02L

    STV160NF02L

    Abstract: No abstract text available
    Text: STV160NF02L  N - CHANNEL 20V - 0.0016Ω - 160A PowerSO-10 STripFET MOSFET TYPE STV160NF02L • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 20 V < 0.0025 Ω 160 A TYPICAL RDS(on) = 0.0016 Ω ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING 100% AVALANCHE TESTED


    Original     		PDF STV160NF02L PowerSO-10 PowerSO-10 STV160NF02L

    STV160NF02L

    Abstract: No abstract text available
    Text: STV160NF02L N-CHANNEL 20V - 0.0016Ω - 160A PowerSO-10 STripFET POWER MOSFET TYPE STV160NF02L • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 20 V < 0.0025 Ω 160 A TYPICAL RDS(on) = 0.0016 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING


    Original     		PDF STV160NF02L PowerSO-10 PowerSO-10 STV160NF02L

    STV160NF02LA

    Abstract: No abstract text available
    Text: STV160NF02LA N-CHANNEL 20V - 0.0018Ω - 160A PowerSO-10 STripFET POWER MOSFET TYPE STV160NF02LA • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 20 V < 0.0027 Ω 160 A TYPICAL RDS(on) = 0.0018 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING


    Original     		PDF STV160NF02LA PowerSO-10 PowerSO-10 STV160NF02LA

    Untitled

    Abstract: No abstract text available
    Text: シングル N チャンネル MOSFET ELM32420LA-S •概要 ■特長 ELM32420LA-S は低入力容量 低電圧駆動、 低 ・ Vds=20V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=45A ・ Rds on < 14mΩ (Vgs=5V) ・ Rds(on) < 26mΩ (Vgs=2.5V)


    Original     		PDF ELM32420LA-S P1402CDG O-252

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM321504A-S •General description ■Features ELM321504A-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-40V Id=-45A Rds(on) < 15mΩ (Vgs=-10V) Rds(on) < 29mΩ (Vgs=-4.5V)


    Original     		PDF ELM321504A-S ELM321504A-S