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    MOSFET 20V 100A Search Results

    MOSFET 20V 100A Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 20V 100A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A1 dual diode

    Abstract: ZXMN2AM832 log sheet air conditioning MLP832 ZXMN2AM832TA ZXMN2AM832TC
    Text: ZXMN2AM832 MPPS Miniature Package Power Solutions DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.12 ; ID= 3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 20V N channel Trench MOSFET utilizes a unique structure


    Original     		PDF ZXMN2AM832 A1 dual diode ZXMN2AM832 log sheet air conditioning MLP832 ZXMN2AM832TA ZXMN2AM832TC

    DM13A

    Abstract: log sheet air conditioning MLP832 ZXMN2AM832 ZXMN2AM832TA ZXMN2AM832TC
    Text: ZXMN2AM832 MPPS Miniature Package Power Solutions DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.12 ; ID= 3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 20V N channel Trench MOSFET utilizes a unique structure


    Original     		PDF ZXMN2AM832 switch00 DM13A log sheet air conditioning MLP832 ZXMN2AM832 ZXMN2AM832TA ZXMN2AM832TC

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UD6604-H Power MOSFET 20V COMPLEMENTARY MOSFET  DESCRIPTION The UTC UD6604-H is a 20V complementary MOSFET, it uses UTC’s advanced technology to provide the customers a minimum on state resistance, etc. The UTC UD6604-H is suitable for load switch and battery


    Original     		PDF UD6604-H UD6604-H UD6604G-AG6-R QW-R211-026

    Mosfet

    Abstract: SSF2122E
    Text: SSF2122E 20V Dual N-Channel MOSFET Main Product Characteristics VDSS 20V RDS on 15.2mohm(typ.) ID 7A ① DFN 3x3-8L Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF2122E 2122E 3000pcs 12000pcs 48000pcs Mosfet SSF2122E

    Mosfet

    Abstract: SSF2341E marking 2341E 2341E marking 4a sot23
    Text: SSF2341E 20V P-Channel MOSFET Main Product Characteristics VDSS -20V RDS on 37mΩ (typ.) ID -4A ① SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF2341E OT-23 for2341E 2341E Mosfet SSF2341E marking 2341E 2341E marking 4a sot23

    Untitled

    Abstract: No abstract text available
    Text: ZXMN2A01F 20V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INFORMATION Product Summary V BR DSS RDS(ON) 20V 0.12Ω @ VGS = 10V Features • • • • • • • • ID TA = +25°C 2.2A Description This new generation MOSFET is designed to minimize the on-state


    Original     		PDF ZXMN2A01F AEC-Q101 DS33513

    Untitled

    Abstract: No abstract text available
    Text: ZXMN2A01F 20V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INFORMATION Product Summary Features V BR DSS RDS(ON) 20V 0.12Ω @ VGS = 10V ID TA = +25°C 2.2A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching


    Original     		PDF ZXMN2A01F AEC-Q101 DS33513

    FDMJ1032C

    Abstract: marking 032 SC-75 Dual N & P-Channel
    Text: FDMJ1032C tm Dual N & P-Channel PowerTrench MOSFET N-Channel: 20V, 3.2A, 90mΩ P-Channel: -20V, -2.5A, 160mΩ Features General Description Q1: N-Channel This dual N and P-Channel „ Max rDS on = 90mΩ at VGS = 4.5V, ID = 3.2A MOSFET is produced enhancement


    Original     		PDF FDMJ1032C FDMJ1032C marking 032 SC-75 Dual N & P-Channel

    ZXM63C02

    Abstract: MO-187 ZXMD63C02X ZXMD63C02XTA ZXMD63C02XTC DSA003665
    Text: ZXMD63C02X 20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V BR DSS=20V; RDS(ON)=0.13⍀; ID=2.4A P-CHANNEL: V(BR)DSS DSS=-20V; RDS(ON)=0.27⍀; ID=-1.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique


    Original     		PDF ZXMD63C02X D-81673 ZXM63C02 MO-187 ZXMD63C02X ZXMD63C02XTA ZXMD63C02XTC DSA003665

    MLP832

    Abstract: ZXMP62M832 ZXMP62M832TA
    Text: ZXMP62M832 MPPS Miniature Package Power Solutions DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY P-Channel V BR DSS = -20V; RDS(ON) = 0.6 ; ID= -1.0A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 30V N channel Trench MOSFET utilizes a unique structure


    Original     		PDF ZXMP62M832 MLP832 ZXMP62M832 ZXMP62M832TA

    ELM14805AA

    Abstract: No abstract text available
    Text: 双 P 沟道 MOSFET ELM14805AA-N •概要 ■特点 ELM14805AA-N 是 P 沟道低输入电容低工作电压、 •Vds=-30V 低导通电阻的大电流 MOSFET，内藏有两个 MOSFET。 ·Id=-8A Vgs=-20V ·Rds(on) < 18mΩ (Vgs=-20V) ·Rds(on) < 19mΩ (Vgs=-10V)


    Original     		PDF ELM14805AA-N ELM14805AA

    Untitled

    Abstract: No abstract text available
    Text: SMD Type MOSFET Complementary PowerTrench MOSFET KDC6020C FDC6020C ( SOT-23-6 ) Unit: mm • Features ● RDS(ON) ＜ 27mΩ (V GS = 4.5V) ● RDS(ON) ＜ 39mΩ (V GS = 2.5V) 6 5 ０．３ｍｉｎ ● N-Channel ：V DS=20V I D=5.9A 4 ● P-Channel： VDS =-20V ID=-4.2A


    Original     		PDF KDC6020C FDC6020C) OT-23-6

    IRL5NJ7404

    Abstract: No abstract text available
    Text: PD - 94052 LOGIC LEVEL HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRL5NJ7404 20V, P-CHANNEL Product Summary Part Number BVDSS IRL5NJ7404 -20V RDS(on) 0.04Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing


    Original     		PDF IRL5NJ7404 IRL5NJ7404

    diode 2a02

    Abstract: No abstract text available
    Text: ZXMN2A02N8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.02 ID = 10.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXMN2A02N8 ZXMN2A02N8TA ZXMN2A02N8TC diode 2a02

    IRL5NJ7404

    Abstract: No abstract text available
    Text: PD - 94052A LOGIC LEVEL HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRL5NJ7404 20V, P-CHANNEL Product Summary Part Number BVDSS IRL5NJ7404 -20V RDS(on) 0.04Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing


    Original     		PDF 4052A IRL5NJ7404 IRL5NJ7404

    ZXMN2A02N8TA

    Abstract: ZXMN2A02N8TC 2A02 TS16949 ZXMN2A02N8
    Text: ZXMN2A02N8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.02 ID = 10.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXMN2A02N8 ZXMN2A02N8TA ZXMN2A02N8TC D-81541 ZXMN2A02N8TA ZXMN2A02N8TC 2A02 TS16949 ZXMN2A02N8

    2A02

    Abstract: ZXMN2A02N8 ZXMN2A02N8TA ZXMN2A02N8TC sm50A
    Text: ZXMN2A02N8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.02 ID = 10.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXMN2A02N8 ZXMN2A02N8TA ZXMN2A02N8TC 2A0200 2A02 ZXMN2A02N8 ZXMN2A02N8TA ZXMN2A02N8TC sm50A

    6P02

    Abstract: ZXM66P02N8 ZXM66P02N8TA ZXM66P02N8TC
    Text: ZXM66P02N8 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=-20V; RDS(ON)=0.025 D=-8.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXM66P02N8 ZXM66P02N8TA ZXM66P02N8TC INFORMATI64-7630 6P02 ZXM66P02N8 ZXM66P02N8TA ZXM66P02N8TC

    IRF7E3704

    Abstract: LCC-18
    Text: PD - 94678 HEXFET POWER MOSFET SURFACE MOUNT LCC-18 IRF7E3704 20V, N-CHANNEL Product Summary Part Number BVDSS IRF7E3704 20V RDS(on) 0.05Ω ID 12A* LCC-18 ® Seventh Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing


    Original     		PDF LCC-18) IRF7E3704 LCC-18 IRF7E3704 LCC-18

    ZXMN2A02N8TA

    Abstract: ZXMN2A02N8TC 2A02 ZXMN2A02N8 115AV
    Text: ZXMN2A02N8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.02 ID = 10.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXMN2A02N8 ZXMN2A02N8TA ZXMN2A02N8TC 2A02ew ZXMN2A02N8TA ZXMN2A02N8TC 2A02 ZXMN2A02N8 115AV

    Untitled

    Abstract: No abstract text available
    Text: PD - 94052A LOGIC LEVEL HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRL5NJ7404 20V, P-CHANNEL Product Summary Part Number BVDSS IRL5NJ7404 -20V RDS(on) 0.04Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing


    Original     		PDF 4052A IRL5NJ7404

    MLP832

    Abstract: ZXMN2AM832 ZXMN2AM832TA ZXMN2AM832TC
    Text: OBSOLETE - PLEASE USE ZXMN2AMCTA ZXMN2AM832 MPPS Miniature Package Power Solutions DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.12 ; ID= 3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package)


    Original     		PDF ZXMN2AM832 MLP832 ZXMN2AM832 ZXMN2AM832TA ZXMN2AM832TC

    Untitled

    Abstract: No abstract text available
    Text: ZXMN2A02N8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.02 ID = 10.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXMN2A02N8 ZXMN2A02N8TA ZXMN2A02N8TC D-81541

    UG 77A DIODE

    Abstract: mosfet p-channel 300v MOSFET N-CH 200V DT92A international rectifier 137 IRF7317 ug 77A
    Text: PD - 9.1568A International IGR Rectifier IRF7317 HEXFET Power MOSFET • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated N-CHANNEL MOSFET î _8 IS 2 Voss • & P-Ch 20V -20V


    OCR Scan     		PDF IRF7317 C-142 C-143 UG 77A DIODE mosfet p-channel 300v MOSFET N-CH 200V DT92A international rectifier 137 IRF7317 ug 77A