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    MOSFET 20N Search Results

    MOSFET 20N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 20N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 20N65 Power MOSFET 20A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N65 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


    Original     		PDF 20N65 20N65 QW-R502-731

    IRFH7934TRPBF

    Abstract: No abstract text available
    Text: PD -97151 IRFH7934PbF HEXFET Power MOSFET Applications l l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC VDSS 30V RDS on max Qg 3.5m @VGS = 10V 20nC : Converters in Networking Systems Benefits


    Original     		PDF IRFH7934PbF 535mH, IRFH7934TRPBF

    Untitled

    Abstract: No abstract text available
    Text: PD -97151 IRFH7934PbF HEXFET Power MOSFET Applications l l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC VDSS 30V RDS on max Qg 3.5m @VGS = 10V 20nC : Converters in Networking Systems Benefits


    Original     		PDF IRFH7934PbF 535mH,

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 20N15V Preliminary Power MOSFET 20A, 150V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N15V is an N-Channel POWER MOSFET, it uses UTC’s advanced technology to provide customers with high switching speed and low gate charge.


    Original     		PDF 20N15V 20N15V 20N15VL-TF1-T 20N15VLG-TF1-T O-220F1 QW-R502-915

    mosfet 20n60

    Abstract: 600V 20A N-Channel MOSFET TO-3P 20n60 G mosfet 20n60 600v 20N60 mosfet 20N60G-T3P-T N-Channel 600V MOSFET 20N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 20N60 Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


    Original     		PDF 20N60 20N60 O-247 QW-R502-587 mosfet 20n60 600V 20A N-Channel MOSFET TO-3P 20n60 G mosfet 20n60 600v 20N60 mosfet 20N60G-T3P-T N-Channel 600V MOSFET

    mosfet 20n60

    Abstract: IDA14 600V 20A N-Channel MOSFET TO-3P 20N60 mosfet
    Text: UNISONIC TECHNOLOGIES CO., LTD 20N60 Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


    Original     		PDF 20N60 20N60 20N60L-T47-T 20N6ntarily, QW-R502-587 mosfet 20n60 IDA14 600V 20A N-Channel MOSFET TO-3P 20N60 mosfet

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 20N60 Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


    Original     		PDF 20N60 20N60 QW-R502-587

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


    Original     		PDF 20N60 20N60 QW-R502-587

    mosfet 20n60

    Abstract: 20n60
    Text: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


    Original     		PDF 20N60 20N60 QW-R502-587 mosfet 20n60

    20N60

    Abstract: 20N60 mosfet
    Text: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


    Original     		PDF 20N60 20N60 QW-R502-587 20N60 mosfet

    Untitled

    Abstract: No abstract text available
    Text: PD - 96226 IRF8734PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS on max Qg (typ.) 30V 3.5m @VGS = 10V 20nC 1 8 S 2 7 S 3


    Original     		PDF IRF8734PbF 10irf

    Untitled

    Abstract: No abstract text available
    Text: IRFH7934PbF HEXFET Power MOSFET Applications l l VDSS 30V Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC RDS on max Qg 3.5m @VGS = 10V 20nC : Converters in Networking Systems Benefits l l l l l


    Original     		PDF IRFH7934PbF IRFH7934TRPBF 535mH,

    20N65

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 20N65 Preliminary Power MOSFET 20A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N65 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


    Original     		PDF 20N65 O-247 20N65 QW-R502-731

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions


    Original     		PDF 20N60C5M O-220

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary 20N40K-MT Power MOSFET 20A, 400V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N40K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum


    Original     		PDF 20N40K-MT 20N40K-MT O-220F2 20N40KL-TF2-T 20N40KG-TF2-Tat QW-R502-B17

    mosfet 400V

    Abstract: 20n40
    Text: UNISONIC TECHNOLOGIES CO., LTD 20N40 Preliminary Power MOSFET 400V, 23A N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original     		PDF 20N40 20N40 O-247 QW-R502-623 mosfet 400V

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary 20N40K-MT Power MOSFET 20A, 400V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N40K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum


    Original     		PDF 20N40K-MT 20N40K-MT QW-R502-B17

    20n50

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 20N50 Preliminary Power MOSFET 20A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N50 is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and low leakage current,


    Original     		PDF 20N50 20N50 20N50L-T3P-T 20N50G-T3P-T QW-R502-895

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 FP D G D S G S Features MOSFET Conditions


    Original     		PDF 20N60C5M O-220

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Symbol


    Original     		PDF 20N60C5M O-220 20070704a

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions


    Original     		PDF 20N60C5M O-220

    20n60c5

    Abstract: 20n60c5m
    Text: IXKP 20N60C5M CoolMOS 1 Power MOSFET ID25 = 7.6 A VDSS = 600 V RDS on) max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		PDF 20N60C5M O-220 20090209d 20n60c5 20n60c5m

    Untitled

    Abstract: No abstract text available
    Text: IXKP 20N60C5M CoolMOS 1 Power MOSFET ID25 = 7.6 A VDSS = 600 V RDS on) max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		PDF 20N60C5M O-220 20090209d