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    MOSFET 1412 Search Results

    MOSFET 1412 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 1412 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMSD2P102LR2 Product Preview FETKY Power MOSFET and Schottky Diode Dual SO–8 Package Features • High Efficiency Components in a Single SO–8 Package • High Density Power MOSFET with Low RDS on , http://onsemi.com Schottky Diode with Low VF MOSFET


    Original     		NTMSD2P102LR2 PDF

    TC1412

    Abstract: TC1412COA TC1412CPA TC1412EOA TC1412EPA TC1412N TC1412NCOA TC1412NCPA
    Text: 2A HIGH-SPEED MOSFET DRIVERS TC1412 TC1412 TC1412N TC1412N 2A HIGH-SPEED MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • The TC1412/1412N are 2A CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to


    Original     		TC1412 TC1412N TC1412/1412N 500mA 1000pF 18nsec TC1412 TC1412COA TC1412CPA TC1412EOA TC1412EPA TC1412N TC1412NCOA TC1412NCPA PDF

    F 5M 365 R

    Abstract: No abstract text available
    Text: NTHD5904T1 Product Preview Dual N-Channel 2.5 V G-S MOSFET http://onsemi.com D2 D1 G2 G1 VDS (V) 20 S2 S1 PRODUCT SUMMARY rDS(on) (Ω) ID (A) 0.075 @ VGS = 4.5 V "4.2 0.134 @ VGS = 2.5 V "3.1 N–Channel MOSFET N–Channel MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)


    Original     		NTHD5904T1 F 5M 365 R PDF

    A6 TSOP-6

    Abstract: No abstract text available
    Text: NTHD5902T1 Product Preview Dual N-Channel 30 V D-S MOSFET http://onsemi.com D1 D2 G1 G2 PRODUCT SUMMARY S1 VDS (V) 30 rDS(on) (Ω) ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 S2 N–Channel MOSFET N–Channel MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)


    Original     		NTHD5902T1 A6 TSOP-6 PDF

    PHILIPS MOSFET MARKING

    Abstract: passive loopthrough n channel depletion MOSFET mosfet 5130 Q 817 mosfet K 2865 115102 4466 8 pin mosfet pin voltage marking code 10 sot23 BF1107
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BF1107 Silicon N-channel single gate MOSFET Preliminary specification File under Discrete Semiconductors, SC07 1998 Apr 07 Philips Semiconductors Preliminary specification Silicon N-channel single gate MOSFET


    Original     		M3D088 BF1107 SCA59 115102/00/01/pp8 PHILIPS MOSFET MARKING passive loopthrough n channel depletion MOSFET mosfet 5130 Q 817 mosfet K 2865 115102 4466 8 pin mosfet pin voltage marking code 10 sot23 BF1107 PDF

    mosfet K 2865

    Abstract: BF1107 PHILIPS RF MOSFET depletion MARKING PHILIPS MOSFET MARKING
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF1107 N-channel single gate MOSFET Product specification Supersedes data of 1998 Apr 07 File under Discrete Semiconductors, SC07 1998 Jun 22 Philips Semiconductors Product specification N-channel single gate MOSFET


    Original     		M3D088 BF1107 BF1107 SCA60 115102/00/02/pp8 mosfet K 2865 PHILIPS RF MOSFET depletion MARKING PHILIPS MOSFET MARKING PDF

    TRANSISTOR ww1

    Abstract: mosfet handbook trimmer 2-18 pf ww1 45 transistor trafo toroidal AN98021 BLF548 KDI-PPT820-75-3 4814 mosfet chip philips catalog potentiometer 2322 350
    Text: APPLICATION NOTE 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET AN98021 Philips Semiconductors 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET CONTENTS 1 INTRODUCTION 2 DESIGN CONSIDERATIONS 3 AMPLIFIER CONCEPT 4 INPUT CIRCUITRY


    Original     		BLF548 AN98021 BLF548 SCA57 TRANSISTOR ww1 mosfet handbook trimmer 2-18 pf ww1 45 transistor trafo toroidal AN98021 KDI-PPT820-75-3 4814 mosfet chip philips catalog potentiometer 2322 350 PDF

    t3055vl

    Abstract: 3055VL T30-55VL 418B-03 5M MARKING CODE DIODE SMC MTD3055VLT4
    Text: MTD3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		MTD3055VL t3055vl 3055VL T30-55VL 418B-03 5M MARKING CODE DIODE SMC MTD3055VLT4 PDF

    TSSOP-8 footprint and soldering sot-23

    Abstract: No abstract text available
    Text: MTB50N06V Preferred Device Power MOSFET 42 Amps, 60 Volts N–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		MTB50N06V TSSOP-8 footprint and soldering sot-23 PDF

    5p03h

    Abstract: TRANSISTOR LWW 21 ultra low level FET TO-236 sot363 ON Marking DS to247 pcb footprint TRANSISTOR LWW 20
    Text: MMFT5P03HD Preferred Device Power MOSFET 5 Amps, 30 Volts P–Channel SOT–223 This miniature surface mount MOSFET features ultra low RDS on and true logic level performance. It is capable of withstanding high energy in the avalanche and commutation modes and the


    Original     		MMFT5P03HD MMFT5P03HD 5p03h TRANSISTOR LWW 21 ultra low level FET TO-236 sot363 ON Marking DS to247 pcb footprint TRANSISTOR LWW 20 PDF

    ON semiconductor 340g

    Abstract: sot-223 body marking D K Q F
    Text: MMFT2406T1 Preferred Device Power MOSFET 700 mA, 240 Volts N–Channel SOT–223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. The device is housed in the SOT–223


    Original     		MMFT2406T1 ON semiconductor 340g sot-223 body marking D K Q F PDF

    HV9100

    Abstract: HV9100C HV9100P HV9100PJ HV9102 HV9102C HV9102P HV9102PJ HV9103 HV9103C
    Text: HV9100 HV9102 HV9103 High-Voltage Switchmode Controllers with MOSFET Ordering Information +VIN MOSFET Switch Package Options Max Feedback Voltage Max Duty Cycle BVDSS RDS ON 10V 70V ± 1.0% 49% 150V 5.0Ω HV9100P HV9100C HV9100PJ 10V 120V ± 1.0% 49% 200V


    Original     		HV9100 HV9102 HV9103 HV9100P HV9100C HV9100PJ HV9102P HV9102C HV9102PJ HV9103P HV9100 HV9100C HV9100P HV9100PJ HV9102 HV9102C HV9102P HV9102PJ HV9103 HV9103C PDF

    diode 1407

    Abstract: FT107
    Text: MMFT107T1 Preferred Device Power MOSFET 250 mA, 200 Volts N–Channel SOT–223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc–dc converters, solenoid and relay drivers. The device is housed in the SOT–223


    Original     		MMFT107T1 diode 1407 FT107 PDF

    2955E

    Abstract: TD 1409
    Text: MMFT2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P–Channel SOT–223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–source diode with a fast recovery time.


    Original     		MMFT2955E 2955E TD 1409 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTHS5404T1 Product Preview N-Channel 2.5 V G-S MOSFET http://onsemi.com D G S PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.030 @ VGS = 4.5 V "7.2 0.045 @ VGS = 2.5 V "5.9 N–Channel MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating


    Original     		NTHS5404T1 PDF

    V9102

    Abstract: No abstract text available
    Text: HV9100 HV9102 HV9103 Supertex inc. High-Voltage Switchmode Controllers with MOSFET Ordering Information +VIN Max Duty Cycle MOSFET Switch Package Options Min Max Feedback Voltage b v dss ^DS ON 10V 70V ± 1 .0 % 49% 150V 5 .0 ft HV91 OOP H V9100C H V9100PJ


    OCR Scan     		HV9100 HV9102 HV9103 HV9100P HV9100C HV9100PJ HV9102P HV9102PJ HV9103P HV9103PJ V9102 PDF

    ON semiconductor 340g

    Abstract: No abstract text available
    Text: NTHS5443T1 Product Preview P-Channel 2.5 V G-S MOSFET http://onsemi.com S G D PRODUCT SUMMARY VDS (V) –20 RDS(on) (Ω) ID (A) 0.065 @ VGS = –4.5 V "4.9 0.074 @ VGS = –3.6 V "4.6 0.110 @ VGS = –2.5 V "3.8 P–Channel MOSFET ChipFET CASE 1206A STYLE 1


    Original     		NTHS5443T1 ON semiconductor 340g PDF

    marking code J1 sot23

    Abstract: No abstract text available
    Text: MMFT2N02EL Preferred Device Power MOSFET 2 Amps, 20 Volts N–Channel SOT–223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This device is also designed with a low threshold voltage so it is fully enhanced with 5 Volts. This new


    Original     		MMFT2N02EL marking code J1 sot23 PDF

    A6 TSOP-6 MARKING

    Abstract: No abstract text available
    Text: NTHS5402T1 Product Preview N-Channel 30 V D-S MOSFET http://onsemi.com D G S PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.035 @ VGS = 10 V "6.7 0.055 @ VGS = 4.5 V "5.3 N–Channel MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol


    Original     		NTHS5402T1 A6 TSOP-6 MARKING PDF

    Untitled

    Abstract: No abstract text available
    Text: NTHS5441T1 Product Preview P-Channel 2.5 V G-S MOSFET http://onsemi.com S G D PRODUCT SUMMARY VDS (V) –20 rDS(on) (Ω) ID (A) 0.055 @ VGS = –4.5 V "5.3 0.06 @ VGS = –3.6 V "5.1 0.083 @ VGS = –2.5 V "4.3 P–Channel MOSFET ChipFET CASE 1206A STYLE 1


    Original     		NTHS5441T1 PDF

    TIL 414

    Abstract: No abstract text available
    Text: S u p e r t e x in c HV9100 HV9102 HV9103 . High-Voltage Switchmode Controllers with MOSFET Ordering Information +VIN MOSFET Switch Package O ptions Min Max Feedback Voltage Max Duty Cycle b v dss ^DS ON 10V 70V ± 1.0% 49% 150V 5.0Q. HV91 OOP HV9100C HV9100PJ


    OCR Scan     		HV9100 HV9102 HV9103 HV9100C HV9100PJ HV9102P HV9102C HV9102PJ HV9103P HV9103C TIL 414 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTHS5445T1 Product Preview P-Channel 1.8 V G-S MOSFET http://onsemi.com S G D PRODUCT SUMMARY VDS (V) –8.0 rDS(on) (Ω) ID (A) 0.035 @ VGS = –4.5 V "7.1 0.047 @ VGS = –2.5 V "6.2 0.062 @ VGS = –1.8 V "5.7 P–Channel MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)


    Original     		NTHS5445T1 PDF

    E3P03

    Abstract: 369A-13
    Text: NTMS3P03R2 Product Preview Power MOSFET -3.05 Amps, -30 Volts P–Channel SO–8 Features • • • • • • • http://onsemi.com High Efficiency Components in a Single SO–8 Package High Density Power MOSFET with Low RDS on Miniature SO–8 Surface Mount Package – Saves Board Space


    Original     		NTMS3P03R2 E3P03 369A-13 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTHD5903T1 Product Preview Dual P-Channel 2.5 V G-S MOSFET http://onsemi.com S1 S2 G2 G1 PRODUCT SUMMARY VDS (V) –20 D2 D1 rDS(on) (Ω) ID (A) 0.155 @ VGS = –4.5 V "2.9 0.180 @ VGS = –3.6 V "2.7 0.260 @ VGS = –2.5 V "2.2 P–Channel MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)


    Original     		NTHD5903T1 PDF