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    MOSFET 11N60 Search Results

    MOSFET 11N60 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 11N60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary 11N60K-MT Power MOSFET 11A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 11N60K-MT is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance,


    Original     		11N60K-MT 11N60K-MT O-220F2 QW-R502-A99 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary 11N60K-MT Power MOSFET 11A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 11N60K-MT is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance,


    Original     		11N60K-MT 11N60K-MT QW-R502-A99 PDF

    11N60

    Abstract: MOSFET 11N60 11n60 dc
    Text: SuperFET TM FCB11N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and


    Original     		FCB11N60 FCB11N60 FCB11N60TM 11N60 MOSFET 11N60 11n60 dc PDF

    3c90 ferrite

    Abstract: 5D-9 ntc 230V AC to 3V DC ic 11N60 RTH 5D-9 AP1661 F1 11N60 1N4148 3C90 MUR460
    Text: BCD Semi Ltd Co. AP1661 Demo Board Manual AP1661 Demo Board Manual Content: 1. Description 2. Specifications 3. Design procedure 4. Schematics of the Demo Board 5. PCB Layout 6. Photo View of the Demo Board 7. BOM 8. Test Result for Typical Performance and Characteristics


    Original     		AP1661 3c90 ferrite 5D-9 ntc 230V AC to 3V DC ic 11N60 RTH 5D-9 F1 11N60 1N4148 3C90 MUR460 PDF

    varistor 10K621

    Abstract: No abstract text available
    Text: Application Note 1096 High Voltage Green Mode PWM Controller AP3105NA/NV/NL/NR Prepared by Wu Qikun System Engineering Dept. 1. Introduction This application note includes detailed explanation of the IC’s major functions, some considerations about the PCB layout, and methods for reducing the


    Original     		AP3105NA/NV/NL/NR AP3105NX AP3103, AP3105NXâ 65kHz AP3103 1N4148, 15V/50Hz 50V/50Hz varistor 10K621 PDF

    IXAN0039

    Abstract: New Generation of 600V GaAs Schottky Diodes for High Power Density PFC Applications Schottky diode TO220 diode schottky 600v MOSFET and parallel Schottky diode schottky diode 100A D-86161 300V dc dc boost converter Diode schottky 29 schematic with a schottky diode
    Text: IXAN0039 A new generation of 600V GaAs Schottky diodes for high power density PFC applications Stefan Steinhoff1, Manfred Reddig2 and Steffen Knigge3 1 IXYS Berlin GmbH, Max-Planck-Strasse 5, D-12489 Berlin, Germany; s.steinhoff@ixys.de 2 Institute of Power Electronics, Dept. of Electrical Engineering of University of Applied Sciences,


    Original     		IXAN0039 D-12489 D-86161 IXAN0039 New Generation of 600V GaAs Schottky Diodes for High Power Density PFC Applications Schottky diode TO220 diode schottky 600v MOSFET and parallel Schottky diode schottky diode 100A 300V dc dc boost converter Diode schottky 29 schematic with a schottky diode PDF

    IXAN0040

    Abstract: 48V SMPS SiC POWER MOSFET PFC smps design 11N60S5 DGSS10-06CC D-86161 SIC DIODES
    Text: COVER STORY IXAN0040 GaAs and SiC devices will find more and more use The IGBT3 technology which combines the trench cell and the field stop concept is successfully GaAs power devices were mainly used up to 300V, while 600V applications like PFC were regarded to be perfectly served by SiC devices. A new generation of 600V GaAs power


    Original     		IXAN0040 D-10997 IXAN0040 48V SMPS SiC POWER MOSFET PFC smps design 11N60S5 DGSS10-06CC D-86161 SIC DIODES PDF

    11N60

    Abstract: P11N60 NCP1601 AND8355 2N2222 AND8356 MUR550 1N4148 1N5406 AND8354
    Text: AND8354/D Designing a HighEfficiency, 300-W, Wide Mains Interleaved PFC Prepared by: Joel Turchi ON Semiconductor http://onsemi.com APPLICATION NOTE Overview as long as they share the same control voltage to do so, the control pin of the two circuits are shorted . The


    Original     		AND8354/D AND8355 NCP1601. 11N60 P11N60 NCP1601 2N2222 AND8356 MUR550 1N4148 1N5406 AND8354 PDF

    sot-23 pinout

    Abstract: 431 sot23-5 FAN21SV06 11n60f FAN7385 FAN7382 FAN7380 fan3000 5N60 datasheet 4N60 fairchild
    Text: Power Seminar 2007 – New Product Update Q3/Q4 Jon Harper, Market Development Manager, Industrial & White Goods Systems, Europe September 2007 www.fairchildsemi.com Products for Power Supplies • • • • • Power33 and Power56 MOSFETs Low input voltage drivers: FAN3xxx


    Original     		Power33 Power56 FAN73xx FAN4800 sot-23 pinout 431 sot23-5 FAN21SV06 11n60f FAN7385 FAN7382 FAN7380 fan3000 5N60 datasheet 4N60 fairchild PDF

    AND8355

    Abstract: 11N60 3WR24 P2390 SPP11N60E diagram ic 4026 pin configuration ic 7410 NPN Transistor TO92 nfa33 smps circuit diagram of 150W step down
    Text: AND8407/D Key Steps to Design an Interleaved PFC Stage Driven by the NCP1631 Prepared by: Joel Turchi ON Semiconductor http://onsemi.com APPLICATION NOTE Interleaved PFC is an emerging solution that becomes particularly popular in applications where a strict form


    Original     		AND8407/D NCP1631 AND8355 11N60 3WR24 P2390 SPP11N60E diagram ic 4026 pin configuration ic 7410 NPN Transistor TO92 nfa33 smps circuit diagram of 150W step down PDF

    11N60E

    Abstract: FMV11N60E MS5F7023 fmv11n60 fuji D4701 DIODE marking le st ic MARKING QG MV11 O-220F MV11N60E
    Text: DATE DRAWN Feb.-05-'08 CHECKED Feb.-05-'08 CHECKED Feb.-05-'08 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor


    Original     		FMV11N60E MS5F7023 H04-004-05 H04-004-03 11N60E FMV11N60E MS5F7023 fmv11n60 fuji D4701 DIODE marking le st ic MARKING QG MV11 O-220F MV11N60E PDF

    11N60

    Abstract: CM6901 QP2512 ps113a 1 MEGA OHM PRESET 835NL-1A-B-C capacitor 47uF/400V IR 11N60 835NL-1A-B-C 12v cm6565
    Text: CM6565 Noise Free 16 pin Self-Start Interleaved PFC with 180 Degree Phase Shift CRM PFC Controller for 90+/85+ GENERAL DESCRIPTION FEATURES The CM6565 is the industry first 16 pin self-start interleaved ‹ Patent PFC with 180 degree phase shift CRM PFC controller for


    Original     		CM6565 CM6565 CM6561s 11N60 CM6901 QP2512 ps113a 1 MEGA OHM PRESET 835NL-1A-B-C capacitor 47uF/400V IR 11N60 835NL-1A-B-C 12v PDF

    CTX16-16926

    Abstract: FA2443-ALC CTX16-17298 TL1431QDBZ ctx16 SLUU256A FA2443-AL HPA126 panasonic TV flyback transformer Phoenix Passive Components
    Text: UCC28600 120-W Evaluation Module User's Guide October 2006 Power Supply MAN SLUU256A UCC28600 120-W Evaluation Module User's Guide Literature Number: SLUU256A August 2006 – Revised October 2006 User's Guide SLUU256A – August 2006 – Revised October 2006


    Original     		UCC28600 SLUU256A UCC28051 EIC61000-3-2 CTX16-16926 FA2443-ALC CTX16-17298 TL1431QDBZ ctx16 SLUU256A FA2443-AL HPA126 panasonic TV flyback transformer Phoenix Passive Components PDF

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 PDF

    STR 6750

    Abstract: 11N60 transistor SMD R1D TRANSISTOR SMD QP DK QP ic 3525 pwm application dc to dc converter 6 PIN SMD IC FOR SMPS SMD 3825 LED 4450 SMD SO-8 SMD MOSFET DRIVE 4450 8 PIN 200w power amplifier PCB layout
    Text: Version 1.1 , July 2000 Application Note AN-CoolMOS-06 200W SMPS Demonstration Board Author: Marko Scherf, Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g 200W SMPS Demonstration Board


    Original     		AN-CoolMOS-06 TDA16888, Room14J1 Room1101 STR 6750 11N60 transistor SMD R1D TRANSISTOR SMD QP DK QP ic 3525 pwm application dc to dc converter 6 PIN SMD IC FOR SMPS SMD 3825 LED 4450 SMD SO-8 SMD MOSFET DRIVE 4450 8 PIN 200w power amplifier PCB layout PDF

    SMD MOSFET DRIVE 4450 8 PIN

    Abstract: A7 SMD TRANSISTOR transistor SMD R1D 6 PIN SMD IC FOR SMPS str 6750 smps power supply circuit 11N60 transistor SMD DK SMD a7 Transistor smd transistor A7 s 52 transistor SMD DK rc
    Text: Version 1.2 , November 2001 Application Note AN-CoolMOS-06 200W SMPS Demonstration Board Author: Marko Scherf, Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion        200W SMPS Demonstration Board


    Original     		AN-CoolMOS-06 TDA16888, Room14J1 Room1101 SMD MOSFET DRIVE 4450 8 PIN A7 SMD TRANSISTOR transistor SMD R1D 6 PIN SMD IC FOR SMPS str 6750 smps power supply circuit 11N60 transistor SMD DK SMD a7 Transistor smd transistor A7 s 52 transistor SMD DK rc PDF

    Untitled

    Abstract: No abstract text available
    Text: OM11N60SA OM11N55SA POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 600V & 550V, 11 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • • • • Isolated Hermetic Metal Package Fast Switching Low RDS 0n Available Screened To MIL-S-19500, TX, TXV And S


    OCR Scan     		OM11N60SA OM11N55SA O-254AA MIL-S-19500, M11N60SA M11N55SA O-254 PDF

    OM11N55

    Abstract: OM11N55SA OM11N60 OM11N60SA na 44q
    Text: OM11N60SA OM11N55SA POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 600V & 550V, 11 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • • • • Isolated Hermetic Metal Package Fast Switching L ow R DS on Available Screened To MIL-S-19500, TX, TXV And S


    OCR Scan     		OM11N60SA OM11N55SA O-254AA MIL-S-19500, O-254 flT073 OM11N55 OM11N55SA OM11N60 na 44q PDF

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40 PDF