9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.
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10N60K
10N60K
10N60KL-TF3-T
10N60KG-TF3-T
O-220F
10N60KL-TF1-T
10N60at
QW-R502-743
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.
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10N60K
10N60K
10N60KL-TF3-T
10N60KG-TF3-T
O-220F
10N60KL-TF1-T
10N60KG-TF1-T
O-22at
QW-R502-743
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10N60K
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.
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10N60K
10N60K
O-220F
QW-R502-743
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.
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10N60K
10N60K
O-220F
O-220F1
QW-R502-743
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tf 10n60
Abstract: MOSFET 10n60 10N60 equivalent+of+10N60+mosfet
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have
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10N60
10N60
QW-R502-119
tf 10n60
MOSFET 10n60
equivalent+of+10N60+mosfet
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10N60G TO-220F
Abstract: UTC10N60L,10N60L, UTC10N60L,10N60L utc 10n60l
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have
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10N60
10N60
QW-R502-119
10N60G TO-220F
UTC10N60L,10N60L,
UTC10N60L,10N60L
utc 10n60l
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10N60C5M
Abstract: kw0649 IGBT GS c16tj 10N60C
Text: Advanced Technical Information IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET Conditions
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10N60C5M
O-220
10N60C5M
kw0649
IGBT GS
c16tj
10N60C
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10N60G
Abstract: mosfet 10a 600v 10N60G-TF3-T utc 10n60l
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have
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10N60
10N60
O-220
O-220F1
O-220F2
QW-R502-119
10N60G
mosfet 10a 600v
10N60G-TF3-T
utc 10n60l
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10N60C
Abstract: C3525
Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET
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10N60C5M
O-220
10N60C
C3525
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60Z Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60Z is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have
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10N60Z
10N60Z
QW-R502-936
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 ABFP D G D S G S Features MOSFET
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10N60C5M
O-220
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10N60C
Abstract: GS54
Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET
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10N60C5M
O-220
20070704a9
10N60C
GS54
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60Z-Q Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60Z-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have
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10N60Z-Q
10N60Z-Q
10N60ZL-TF1-T
10N60ZG-TF1-T
QW-R502-B05
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Untitled
Abstract: No abstract text available
Text: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions
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10N60C5M
O-220
20090209d
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10N60C
Abstract: No abstract text available
Text: IXKP 10N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Conditions VDSS TVJ = 25°C
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10N60C5
O-220
10N60C
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10N60C
Abstract: 10N60C5M
Text: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions
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10N60C5M
O-220
20090209d
10N60C
10N60C5M
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10N60C
Abstract: c16tj 10N60C5M
Text: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions
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10N60C5M
O-220
20080523c
10N60C
c16tj
10N60C5M
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10N60C
Abstract: No abstract text available
Text: IXKP 10N60C5 Advanced Technical Information ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Conditions VDSS TVJ = 25°C
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10N60C5
O-220
10N60C
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Untitled
Abstract: No abstract text available
Text: IXKP 10N60C5M COOLMOS * Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions
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10N60C5M
O-220
20080310b
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10N60
Abstract: 10n60b equivalent data book of 10N60 mosfet MOSFET 10n60 Data sheet MOSFET 10n60 mosfet 10a 600v mosfet 300V 10A datasheet 10N60A g 10N60 power mosfet 600v
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a
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10N60
O-220
10N60
O-220F
O-220F1
10N60L
10N60G
QW-R502-119
10n60b
equivalent data book of 10N60 mosfet
MOSFET 10n60 Data sheet
MOSFET 10n60
mosfet 10a 600v
mosfet 300V 10A datasheet
10N60A
g 10N60
power mosfet 600v
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Untitled
Abstract: No abstract text available
Text: IXKP 10N60C5 CoolMOS 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings
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10N60C5
O-220
20090209c
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10N60C
Abstract: IXKP10N60C5
Text: IXKP 10N60C5 CoolMOS 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS
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10N60C5
O-220
20080523b
10N60C
IXKP10N60C5
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K-MT Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60K-MT is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high
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10N60K-MT
10N60K-MT
QW-R205-022
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