Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOSFET 1052 Search Results

    MOSFET 1052 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 1052 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    jfet cascode

    Abstract: vertical JFET SiS 671 12 VOLTS CIRCUIT USING MOSFET an7260.2 mosfet equivalent DEPLETION MOSFET transistor jfet Harris Semiconductor jfet cascode mosfet switching
    Text: Harris Semiconductor No. AN7260.2 Harris Power MOSFETs September 1993 Power MOSFET Switching Waveforms: A New Insight Author: Harold R. Ronan, Jr. and C. Frank Wheatley, Jr. The examination of power MOSFET voltage and current waveforms during switching transitions reveals that the


    Original     		PDF AN7260 jfet cascode vertical JFET SiS 671 12 VOLTS CIRCUIT USING MOSFET an7260.2 mosfet equivalent DEPLETION MOSFET transistor jfet Harris Semiconductor jfet cascode mosfet switching

    MOSFET 1052

    Abstract: FAN53168 FAN53418 FAN53418M FDD6696
    Text: www.fairchildsemi.com FAN53418 Synchronous DC-DC MOSFET Driver Features General Description • Drives N-channel High-Side and Low-Side MOSFETs in a synchronous buck configuration • Internal Adaptive “Shoot-Through” Protection • High Switching Frequency > 500kHz


    Original     		PDF FAN53418 500kHz) w/3000pF FAN53418 FAN53168 DS300053418 MOSFET 1052 FAN53418M FDD6696

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PD-97174A 2N7622U2 IRHLNA797064 60V, P-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT SMD-2 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHLNA797064 100K Rads (Si) RDS(on) 0.015Ω ID -56A* IRHLNA793064 0.015Ω


    Original     		PDF PD-97174A 2N7622U2 IRHLNA797064 IRHLNA797064 IRHLNA793064 MIL-STD-750, MlL-STD-750,

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PD-97174A 2N7622U2 IRHLNA797064 60V, P-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT SMD-2 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHLNA797064 100K Rads (Si) RDS(on) 0.015Ω ID -56A* IRHLNA793064 0.015Ω


    Original     		PDF PD-97174A IRHLNA797064 IRHLNA793064 2N7622U2 -380A/ MIL-STD-750, MlL-STD-750,

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Devices RF Power MOSFET RFM04U6P Application Note Contens Contens ・・Bias Bias Current Current // DC DC Characteristics Characteristics Vds Vds = 3.6V, 3.6V, 4.8V, 4.8V, 6.0V, 6.0V, 7.2V 7.2V Vgs = 0.5V ~ 1.7V 0.05V Vgs = 0.5V ∼ 1.7V ( 0.05V Step


    Original     		PDF RFM04U6P 100mA, 200mA, 300mA, 400mA, 500mA, 600mA, 700mA

    2N7622U2

    Abstract: IRHLNA793064 IRHLNA797064
    Text: PD-97174A 2N7622U2 IRHLNA797064 60V, P-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT SMD-2 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHLNA797064 100K Rads (Si) RDS(on) 0.015Ω ID -56A* IRHLNA793064 0.015Ω -56A* 300K Rads (Si)


    Original     		PDF PD-97174A 2N7622U2 IRHLNA797064 IRHLNA797064 IRHLNA793064 ap380A/ MIL-STD-750, MlL-STD-750, 2N7622U2 IRHLNA793064

    MOSFET 1052

    Abstract: No abstract text available
    Text: SSFP16N25 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 250V Simple Drive Requirement ID25 = 16A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability


    Original     		PDF SSFP16N25 00A/s ISD16A di/dt200A/S width300S; MOSFET 1052

    Nippon capacitors

    Abstract: nippon chemi-con 10000 uf 16v
    Text: LTC3703 100V Synchronous Switching Regulator Controller Description Features High Voltage Operation: Up to 100V Large 1Ω Gate Drivers No Current Sense Resistor Required Step-Up or Step-Down DC/DC Converter Dual N-Channel MOSFET Synchronous Drive Excellent Line and Load Transient Response


    Original     		PDF 100kHz 600kHz n16-Pin 28-Pin LTC3703 16-Pin 500mA LT1339 Nippon capacitors nippon chemi-con 10000 uf 16v

    Untitled

    Abstract: No abstract text available
    Text: NTY100N10 Preferred Device Power MOSFET 123 A, 100 V N-Channel Enhancement-Mode TO264 Package http://onsemi.com Features 123 A, 100 V 9 mW @ VGS = 10 V TYP • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Avalanche Energy Specified


    Original     		PDF NTY100N10 0E-03 0E-02 0E-05 0E-04 0E-01

    marking ic 8pin C66

    Abstract: No abstract text available
    Text: TPS28225 TPS28226 Product Preview www.ti.com SLUS710A – MAY 2006 – REVISED JANUARY 2007 High-Frequency 4-A Sink Synchronous MOSFET Drivers FEATURES • • • • • • • • • • • • • • • Drives Two N-Channel MOSFETs with 14-ns Adaptive Dead Time


    Original     		PDF TPS28225 TPS28226 SLUS710A 14-ns 10-ns 30-ns TPS54310 TPS62110 UCC28019 marking ic 8pin C66

    APM2016N

    Abstract: MOSFET 1052 APM2016NU STD-020C
    Text: APM2016NU N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/40A, RDS ON =12mΩ (typ.) @ VGS=4.5V RDS(ON)=20mΩ (typ.) @ VGS=2.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)


    Original     		PDF APM2016NU 0V/40A, O-252 APM2016N APM2016N MOSFET 1052 APM2016NU STD-020C

    APM2016N

    Abstract: apm*2016n APM2016NU marking 1052 MOSFET 1052 A102
    Text: APM2016NU N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/40A, RDS ON =12mΩ (typ.) @ VGS=4.5V G RDS(ON)=20mΩ (typ.) @ VGS=2.5V • • • D S Super High Dense Cell Design Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available


    Original     		PDF APM2016NU 0V/40A, O-252 APM2016N APM2016N apm*2016n APM2016NU marking 1052 MOSFET 1052 A102

    Untitled

    Abstract: No abstract text available
    Text: LTC3703 100V Synchronous Switching Regulator Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n High Voltage Operation: Up to 100V Large 1Ω Gate Drivers No Current Sense Resistor Required Step-Up or Step-Down DC/DC Converter Dual N-Channel MOSFET Synchronous Drive


    Original     		PDF LTC3703 100kHz 600kHz 16-Pin 28-Pin LT3430/LT3431 200kHz/500kHz LT3433

    Untitled

    Abstract: No abstract text available
    Text: Application Note 1052 Design Guidance for AP3106 Prepared by Qikun Wu System Engineering Dept. minimum PWM frequency is set at about 26kHz. 1. Introduction The AP3106 is a high voltage start-up, current mode PWM controller with green-mode power-saving operation.


    Original     		PDF AP3106 26kHz. AP3106

    LTC3703H

    Abstract: LTC3703-5 BAT85 Spice f10d LT1076HV power adapter 12v/5a pin LTC3703 MBR1100 Si7456DP BAS19
    Text: LTC3703 100V Synchronous Switching Regulator Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n The LTC 3703 is a synchronous step-down switching regulator controller that can directly step down voltages from up to 100V, making it ideal for telecom and automotive applications. The LTC3703 drives external N-channel


    Original     		PDF LTC3703 LTC3703 600kHz) 100kHz 600kHz toT3430/LT3431 200kHz/500kHz 16-Pin LT3433 500mA LTC3703H LTC3703-5 BAT85 Spice f10d LT1076HV power adapter 12v/5a pin MBR1100 Si7456DP BAS19

    30V 20A 10KHz power MOSFET

    Abstract: P channel MOSFET 10A schematic REG IC 48V IN 12V 10A OUT lt1339 application note MOSFET FOR 100khz SWITCHING APPLICATIONS schematic diagram 48v -200Vdc buck boost converter dual high side MOSFET driver with charge pump f12 mosfet IRFZ44 operation data buck converter vin 40v vout 20v 50khz
    Text: LTC3703 100V Synchronous Switching Regulator Controller DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High Voltage Operation: Up to 100V Large 1Ω Gate Drivers No Current Sense Resistor Required Step-Up or Step-Down DC/DC Converter


    Original     		PDF LTC3703 100kHz 600kHz 16-Pin 28-Pin LT3430/LT3431 200kHz/500kHz LT3433 30V 20A 10KHz power MOSFET P channel MOSFET 10A schematic REG IC 48V IN 12V 10A OUT lt1339 application note MOSFET FOR 100khz SWITCHING APPLICATIONS schematic diagram 48v -200Vdc buck boost converter dual high side MOSFET driver with charge pump f12 mosfet IRFZ44 operation data buck converter vin 40v vout 20v 50khz

    2N6770

    Abstract: No abstract text available
    Text: T2 UNITRODE CORP 9347963 UNITRODE 0G1D5E0 4 ï ~ CORP 92D 10520 POWER MOSFET TRANSISTORS 2N6769 J, JTX, JTXV 2N6770 500 Volt, 0.4 Ohm N-Channel FEA TU RES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Tem perature Stability


    OCR Scan     		PDF 2N6769 2N6770 001D523 2N6770

    mosfet 600V 100A ST

    Abstract: No abstract text available
    Text: SSF10N60A Advanced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 iaA Max. @ VDS= 600V


    OCR Scan     		PDF SSF10N60A mosfet 600V 100A ST

    Untitled

    Abstract: No abstract text available
    Text: International h?r Rectifier IRFPC40 INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • PD-9.511B 4Û55452 DOlSSbfi 0=13 • INR Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling


    OCR Scan     		PDF IRFPC40 O-247 O-220 O-247 QD1SS73

    FS50VS-3

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS50VS-3 HIGH-SPEED SWITCHING USE j FS50VS-3 OUTLINE DRAWING Dimensions in mm - 4-5 1 j 1.3 0.5 C i X Q -Ï Q C?; A ’ ö +i c\i T" ?) (3) •4) • 10V DRIVE • VDSS .150V


    OCR Scan     		PDF FS50VS-3 130ns O-220S FS50VS-3

    BSM 225

    Abstract: siemens bsm 181 BSM181
    Text: SIEMENS SIMOPAC MOSFET Modules BSM 181 F C BSM 181 FR VDS = 800 V /D = 34 A ^DS(on) = 0.32 Q • • • • • • • Power m odule Single switch FREDFET N channel E nhancem ent mode Package with insulated metal base plate C ircuit diagram : Fig. 1 a ’ )


    OCR Scan     		PDF 7076-A 052-A 057-A BSM 225 siemens bsm 181 BSM181

    N mosfet 100v 500A

    Abstract: No abstract text available
    Text: DE~1 cl B 4 7 citi3 OOIQSBM 1 UNITRODE. CORP 9347963 U N I T R O D E CORP 920 POWER MOSFET TRANSISTORS 100 Volt, 0.6 Ohm N-Ghannel 1Û5 2 4 D7"-J^-o7 JTX jtkvI K FEATURES DESCRIPTION • • • • • Th e Unltrode power M O SFET design u tilize s the m ost advanced technology available.


    OCR Scan     		PDF 2N6782 N mosfet 100v 500A

    Untitled

    Abstract: No abstract text available
    Text: SÌ1032R/X Vishay Siliconix New Product N-Channel 20-V D-S MOSFET TrenchFE T PRODUCT SUMMARY V d s (V ) -2 0 M O SFETs 1 .5 -V R a te d Id ( n iA ) r D S (on) ( Q ) 5 @ V Gs = 4.5 V 200 7 @ VGs = 2.5 V 175 9 @ V QS = 1.8 V 150 10 d V qs = 1.5 V 50 ESD Protected


    OCR Scan     		PDF 1032R/X S-02970-- 22-Jan-01 SC-75A, SI1032R

    Mosfet FTR 03-E

    Abstract: mt 1389 fe 2SD122 dtc144gs low noise Darlington Transistor DTC114EVA DTC143EF V/65e9 transistor transistor 2SC337
    Text: h 7 > y ^ £ / T ra n sisto rs h 7 > v * £ IÜ á q — J W / T r a n s is t o r s S u m m a ry • POWER MOSFET Application Part No 2SK1976 V dss V 2SK2176 Package Typ (Q ) V gs (V) Page Id (A) 450 5 30 1.0 10 2.5 TO-220FP 88 60 10 30 0 08 10 5 TO-220FP


    OCR Scan     		PDF 2SK1976 2SK2095 2SK2176 O-220FP 2SA785 2SA790 2SA790M 2SA806 Mosfet FTR 03-E mt 1389 fe 2SD122 dtc144gs low noise Darlington Transistor DTC114EVA DTC143EF V/65e9 transistor transistor 2SC337