Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 9N100 Preliminary Power MOSFET 9A, 1000V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N100 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state
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9N100
9N100
O-247
QW-R502-735
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9N100
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 9N100 Preliminary Power MOSFET 9A, 1000V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N100 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state
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9N100
9N100
QW-R502-735
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Untitled
Abstract: No abstract text available
Text: APT9M100B APT9M100S 1000V, 9A, 1.40Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT9M100B
APT9M100S
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APT9M100B
Abstract: APT9M100S MIC4452
Text: APT9M100B APT9M100S 1000V, 9A, 1.40Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT9M100B
APT9M100S
APT9M100B
APT9M100S
MIC4452
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mosfet 1000v 9A
Abstract: APT9M100B APT9M100S MIC4452 1000v 5a ultra fast recovery diode
Text: APT9M100B APT9M100S 1000V, 9A, 1.50Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT9M100B
APT9M100S
mosfet 1000v 9A
APT9M100B
APT9M100S
MIC4452
1000v 5a ultra fast recovery diode
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Untitled
Abstract: No abstract text available
Text: APT9M100B APT9M100S 1000V, 9A, 1.40Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT9M100B
APT9M100S
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Untitled
Abstract: No abstract text available
Text: APTM100H45ST Full bridge Series & parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 450mΩ Ω max @ Tj = 25°C ID = 18A @ Tc = 25°C Application • • • Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Features • •
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APTM100H45ST
JESD24-1.
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w11nk100z
Abstract: W11NK100 STW11NK100Z stw11nk sound Processor acp 2371 st 0560
Text: STW11NK100Z N-CHANNEL 1000V - 1.1Ω - 9A TO-247 Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE STW11NK100Z • ■ ■ ■ ■ ■ VDSS RDS on 1000 V < 1.38 Ω ID Pw 9A 230 W TYPICAL RDS(on) = 0.72 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
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STW11NK100Z
O-247
w11nk100z
W11NK100
STW11NK100Z
stw11nk
sound Processor acp 2371
st 0560
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Untitled
Abstract: No abstract text available
Text: APTM100H45SCTG VDSS = 1000V RDSon = 450mΩ typ @ Tj = 25°C ID = 18A @ Tc = 25°C Full bridge Series & SiC parallel diodes MOSFET Power Module VBUS CR3A CR1A CR1B Q1 Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies
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APTM100H45SCTG
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mosfet 1000v 9A
Abstract: isl6260 APT18M100B APT18M100S MIC4452
Text: APT18M100B APT18M100S 1000V, 18A, 0.70Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT18M100B
APT18M100S
mosfet 1000v 9A
isl6260
APT18M100B
APT18M100S
MIC4452
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APT18M100B
Abstract: APT18M100S MIC4452
Text: APT18M100B APT18M100S 1000V, 18A, 0.70Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT18M100B
APT18M100S
APT18M100B
APT18M100S
MIC4452
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Untitled
Abstract: No abstract text available
Text: APT18M100B APT18M100S 1000V, 18A, 0.70Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT18M100B
APT18M100S
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Untitled
Abstract: No abstract text available
Text: APT18M100B APT18M100S 1000V, 18A, 0.70Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT18M100B
APT18M100S
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F8NK100Z
Abstract: P8NK100Z STF8NK100Z STP8NK100Z JESD97 p8nk equivalent to220
Text: STF8NK100Z STP8NK100Z N-CHANNEL 1000V - 1.66Ω - 9A - TO-220 - TO-220FP Zener-Protected SuperMESH MOSFET Preliminary data General features Type VDSS STF8NK100Z 1000 V STP8NK100Z 1000 V RDS on <2 Ω <2 Ω ID Pw 6.3 ANote 1 40 W 6.3 A 160 W • EXTREMELY HIGH dv/dt CAPABILITY
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STF8NK100Z
STP8NK100Z
O-220
O-220FP
STF8NK100Z
STP8NK100Z
O-220
F8NK100Z
P8NK100Z
JESD97
p8nk
equivalent to220
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APT9F100B
Abstract: APT9F100S MIC4452 500v 5a ultra fast recovery diode
Text: APT9F100B APT9F100S 1000V, 9A, 1.6Ω Max, trr ≤200ns N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
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APT9F100B
APT9F100S
200ns
APT9F100B
APT9F100S
MIC4452
500v 5a ultra fast recovery diode
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Untitled
Abstract: No abstract text available
Text: APT9F100B APT9F100S 1000V, 9A, 1.6Ω Max, trr ≤200ns N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
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APT9F100B
APT9F100S
200ns
APT9F100B
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APT0406
Abstract: APT0502 APTM100H80FT1G mosfet 1000v 9A
Text: APTM100H80FT1G VDSS = 1000V RDSon = 800mΩ typ @ Tj = 25°C ID = 11A @ Tc = 25°C Full - Bridge MOSFET Power Module 4 3 Q1 Q3 5 2 6 1 Q2 Q4 7 9 8 11 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control
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APTM100H80FT1G
APT0406
APT0502
APTM100H80FT1G
mosfet 1000v 9A
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Untitled
Abstract: No abstract text available
Text: APTM100H80FT1G VDSS = 1000V RDSon = 800mΩ typ @ Tj = 25°C ID = 11A @ Tc = 25°C Full - Bridge MOSFET Power Module 4 3 Q1 Q3 2 5 6 1 Q2 Q4 7 9 8 11 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control
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APTM100H80FT1G
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APT17F100B
Abstract: APT17F100S MIC4452 mosfet 1000v 9A
Text: APT17F100B APT17F100S 1000V, 17A, 0.78Ω Max, trr ≤245ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT17F100B
APT17F100S
245ns
APT17F100B
APT17F100S
MIC4452
mosfet 1000v 9A
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APT17F100B
Abstract: APT17F100S MIC4452
Text: APT17F100B APT17F100S 1000V, 17A, 0.80Ω Max, trr ≤245ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT17F100B
APT17F100S
245ns
APT17F100B
APT17F100S
MIC4452
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Untitled
Abstract: No abstract text available
Text: APT17F100B APT17F100S 1000V, 17A, 0.78Ω Max, trr ≤245ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT17F100B
APT17F100S
245ns
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SA215
Abstract: No abstract text available
Text: APT17F100B APT17F100S 1000V, 17A, 0.80Ω Max, trr ≤245ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT17F100B
APT17F100S
245ns
SA215
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Untitled
Abstract: No abstract text available
Text: APT17F100B APT17F100S 1000V, 17A, 0.78Ω Max, trr ≤245ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT17F100B
APT17F100S
245ns
APT17F100B
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IRF P CHANNEL MOSFET 200V 20A
Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω
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RF1S9630SM
RF1S4N100SM
RF1S630SM
RF1S70N06SM
RF1S70N03SM
O-263AB)
LC96586
IRF P CHANNEL MOSFET 200V 20A
P Channel Power MOSFET IRF
IRF P CHANNEL MOSFET
N CHANNEL MOSFET 10A 1000V
IRF P-Channel FET 200v 20A
IRF P CHANNEL MOSFET 10A 100V
p channel mosfet 100v 70a to-252
IRF P CHANNEL MOSFET 100v
IRF P-Channel FET 100v
IRF P CHANNEL MOSFET TO-252
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