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    MOSFET 1000V 9A Search Results

    MOSFET 1000V 9A Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 1000V 9A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 9N100 Preliminary Power MOSFET 9A, 1000V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 9N100 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original     		PDF 9N100 9N100 O-247 QW-R502-735

    9N100

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 9N100 Preliminary Power MOSFET 9A, 1000V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 9N100 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original     		PDF 9N100 9N100 QW-R502-735

    Untitled

    Abstract: No abstract text available
    Text: APT9M100B APT9M100S 1000V, 9A, 1.40Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT9M100B APT9M100S

    APT9M100B

    Abstract: APT9M100S MIC4452
    Text: APT9M100B APT9M100S 1000V, 9A, 1.40Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT9M100B APT9M100S APT9M100B APT9M100S MIC4452

    mosfet 1000v 9A

    Abstract: APT9M100B APT9M100S MIC4452 1000v 5a ultra fast recovery diode
    Text: APT9M100B APT9M100S 1000V, 9A, 1.50Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT9M100B APT9M100S mosfet 1000v 9A APT9M100B APT9M100S MIC4452 1000v 5a ultra fast recovery diode

    Untitled

    Abstract: No abstract text available
    Text: APT9M100B APT9M100S 1000V, 9A, 1.40Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT9M100B APT9M100S

    Untitled

    Abstract: No abstract text available
    Text: APTM100H45ST Full bridge Series & parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 450mΩ Ω max @ Tj = 25°C ID = 18A @ Tc = 25°C Application • • • Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Features • •


    Original     		PDF APTM100H45ST JESD24-1.

    w11nk100z

    Abstract: W11NK100 STW11NK100Z stw11nk sound Processor acp 2371 st 0560
    Text: STW11NK100Z N-CHANNEL 1000V - 1.1Ω - 9A TO-247 Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE STW11NK100Z • ■ ■ ■ ■ ■ VDSS RDS on 1000 V < 1.38 Ω ID Pw 9A 230 W TYPICAL RDS(on) = 0.72 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		PDF STW11NK100Z O-247 w11nk100z W11NK100 STW11NK100Z stw11nk sound Processor acp 2371 st 0560

    Untitled

    Abstract: No abstract text available
    Text: APTM100H45SCTG VDSS = 1000V RDSon = 450mΩ typ @ Tj = 25°C ID = 18A @ Tc = 25°C Full bridge Series & SiC parallel diodes MOSFET Power Module VBUS CR3A CR1A CR1B Q1 Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies


    Original     		PDF APTM100H45SCTG

    mosfet 1000v 9A

    Abstract: isl6260 APT18M100B APT18M100S MIC4452
    Text: APT18M100B APT18M100S 1000V, 18A, 0.70Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT18M100B APT18M100S mosfet 1000v 9A isl6260 APT18M100B APT18M100S MIC4452

    APT18M100B

    Abstract: APT18M100S MIC4452
    Text: APT18M100B APT18M100S 1000V, 18A, 0.70Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT18M100B APT18M100S APT18M100B APT18M100S MIC4452

    Untitled

    Abstract: No abstract text available
    Text: APT18M100B APT18M100S 1000V, 18A, 0.70Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT18M100B APT18M100S

    Untitled

    Abstract: No abstract text available
    Text: APT18M100B APT18M100S 1000V, 18A, 0.70Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT18M100B APT18M100S

    F8NK100Z

    Abstract: P8NK100Z STF8NK100Z STP8NK100Z JESD97 p8nk equivalent to220
    Text: STF8NK100Z STP8NK100Z N-CHANNEL 1000V - 1.66Ω - 9A - TO-220 - TO-220FP Zener-Protected SuperMESH MOSFET Preliminary data General features Type VDSS STF8NK100Z 1000 V STP8NK100Z 1000 V RDS on <2 Ω <2 Ω ID Pw 6.3 ANote 1 40 W 6.3 A 160 W • EXTREMELY HIGH dv/dt CAPABILITY


    Original     		PDF STF8NK100Z STP8NK100Z O-220 O-220FP STF8NK100Z STP8NK100Z O-220 F8NK100Z P8NK100Z JESD97 p8nk equivalent to220

    APT9F100B

    Abstract: APT9F100S MIC4452 500v 5a ultra fast recovery diode
    Text: APT9F100B APT9F100S 1000V, 9A, 1.6Ω Max, trr ≤200ns N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced


    Original     		PDF APT9F100B APT9F100S 200ns APT9F100B APT9F100S MIC4452 500v 5a ultra fast recovery diode

    Untitled

    Abstract: No abstract text available
    Text: APT9F100B APT9F100S 1000V, 9A, 1.6Ω Max, trr ≤200ns N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced


    Original     		PDF APT9F100B APT9F100S 200ns APT9F100B

    APT0406

    Abstract: APT0502 APTM100H80FT1G mosfet 1000v 9A
    Text: APTM100H80FT1G VDSS = 1000V RDSon = 800mΩ typ @ Tj = 25°C ID = 11A @ Tc = 25°C Full - Bridge MOSFET Power Module 4 3 Q1 Q3 5 2 6 1 Q2 Q4 7 9 8 11 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control


    Original     		PDF APTM100H80FT1G APT0406 APT0502 APTM100H80FT1G mosfet 1000v 9A

    Untitled

    Abstract: No abstract text available
    Text: APTM100H80FT1G VDSS = 1000V RDSon = 800mΩ typ @ Tj = 25°C ID = 11A @ Tc = 25°C Full - Bridge MOSFET Power Module 4 3 Q1 Q3 2 5 6 1 Q2 Q4 7 9 8 11 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control


    Original     		PDF APTM100H80FT1G

    APT17F100B

    Abstract: APT17F100S MIC4452 mosfet 1000v 9A
    Text: APT17F100B APT17F100S 1000V, 17A, 0.78Ω Max, trr ≤245ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft


    Original     		PDF APT17F100B APT17F100S 245ns APT17F100B APT17F100S MIC4452 mosfet 1000v 9A

    APT17F100B

    Abstract: APT17F100S MIC4452
    Text: APT17F100B APT17F100S 1000V, 17A, 0.80Ω Max, trr ≤245ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft


    Original     		PDF APT17F100B APT17F100S 245ns APT17F100B APT17F100S MIC4452

    Untitled

    Abstract: No abstract text available
    Text: APT17F100B APT17F100S 1000V, 17A, 0.78Ω Max, trr ≤245ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft


    Original     		PDF APT17F100B APT17F100S 245ns

    SA215

    Abstract: No abstract text available
    Text: APT17F100B APT17F100S 1000V, 17A, 0.80Ω Max, trr ≤245ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft


    Original     		PDF APT17F100B APT17F100S 245ns SA215

    Untitled

    Abstract: No abstract text available
    Text: APT17F100B APT17F100S 1000V, 17A, 0.78Ω Max, trr ≤245ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft


    Original     		PDF APT17F100B APT17F100S 245ns APT17F100B

    IRF P CHANNEL MOSFET 200V 20A

    Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
    Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω


    Original     		PDF RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM O-263AB) LC96586 IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252