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    MOSFET 1000A Search Results

    MOSFET 1000A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 1000A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 49mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


    Original     		PDF APTMC60TLM55CT3AG

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 110mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


    Original     		PDF APTMC60TL11CT3AG

    800V 40A mosfet

    Abstract: mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG
    Text: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 55mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


    Original     		PDF APTMC60TLM55CT3AG 800V 40A mosfet mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 98mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


    Original     		PDF APTMC60TL11CT3AG

    uc3854 3kw pfc

    Abstract: uc3854 Application Note Power Factor Correction With the UC3854 2kw pfc uc3854 3kw PFC 3kw APT9901 UNITRODE Claudio de Sa e Silva 3.5kw pfc 3kw uc3854
    Text: APPLICATION NOTE APT9901 By: Kenneth Dierberger Denis Grafham OPTIMIZING THE DESIGN OF 3.5kW SINGLE-MOSFET POWER FACTOR CORRECTORS 1 APT9901 Optimizing The Design of 3.5kW Single-MOSFET Power Factor Correctors Kenneth Dierberger, Technical Marketing Manager


    Original     		PDF APT9901 B-1330 uc3854 3kw pfc uc3854 Application Note Power Factor Correction With the UC3854 2kw pfc uc3854 3kw PFC 3kw APT9901 UNITRODE Claudio de Sa e Silva 3.5kw pfc 3kw uc3854

    Untitled

    Abstract: No abstract text available
    Text: APTMC120AM20CT1AG Phase leg SiC MOSFET Power Module VDSS = 1200V RDSon = 17mΩ max @ Tj = 25°C ID = 143A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET


    Original     		PDF APTMC120AM20CT1AG

    APTMC120AM55CT1AG

    Abstract: 800V 40A mosfet
    Text: APTMC120AM55CT1AG Phase leg SiC MOSFET Power Module VDSS = 1200V RDSon = 55mΩ max @ Tj = 25°C ID = 55A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET


    Original     		PDF APTMC120AM55CT1AG APTMC120AM55CT1AG 800V 40A mosfet

    Untitled

    Abstract: No abstract text available
    Text: APTMC120AM55CT1AG Phase leg SiC MOSFET Power Module VDSS = 1200V RDSon = 49mΩ max @ Tj = 25°C ID = 55A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET


    Original     		PDF APTMC120AM55CT1AG

    "VDSS 800V" 40A mosfet

    Abstract: APTMC120AM20CT1AG mosfet 1200V 40A 800V 40A mosfet mosfet 40a 200v SiC POWER MOSFET Microsemi MOSFET 1200V
    Text: APTMC120AM20CT1AG Phase leg SiC MOSFET Power Module VDSS = 1200V RDSon = 20mΩ max @ Tj = 25°C ID = 102A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET


    Original     		PDF APTMC120AM20CT1AG "VDSS 800V" 40A mosfet APTMC120AM20CT1AG mosfet 1200V 40A 800V 40A mosfet mosfet 40a 200v SiC POWER MOSFET Microsemi MOSFET 1200V

    uc3854 3kw pfc

    Abstract: UNITRODE Claudio de Sa e Silva PFC 3kw Power Factor Correction with the UC3854 2kw pfc sc265 triac 2kw uc3854 3kw uc3854 UC3854 for PFC 3.5kw 3.5kw pfc
    Text: APT9901 By Kenneth Dierberger and Denis Grafham OPTIMIZING THE DESIGN OF 3.5KW SINGLE-MOSFET POWER FACTOR CORRECTORS OPTIMIZING THE DESIGN OF 3.5KW SINGLE-MOSFET POWER FACTOR CORRECTORS Kenneth Dierberger, Manager Technical Marketing, Advanced PowerTechnology, 405 S.W. Columbia St., Bend, OR 97702, USA


    Original     		PDF APT9901 B-1330 UC3854" NH03054. D-90471 UC1854/UC2854/UC3854 pp171-177, D90471N uc3854 3kw pfc UNITRODE Claudio de Sa e Silva PFC 3kw Power Factor Correction with the UC3854 2kw pfc sc265 triac 2kw uc3854 3kw uc3854 UC3854 for PFC 3.5kw 3.5kw pfc

    Untitled

    Abstract: No abstract text available
    Text: APT56M50B2 APT56M50L 500V, 56A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra


    Original     		PDF APT56M50B2 APT56M50L O-264 APT56M50B2 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT56M50B2 APT56M50L 500V, 56A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra


    Original     		PDF APT56M50B2 APT56M50L O-264 O-247

    APT34M60B

    Abstract: APT34M60S MIC4452
    Text: APT34M60B APT34M60S 600V, 34A, 0.21Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT34M60B APT34M60S APT34M60B APT34M60S MIC4452

    APT14M100B

    Abstract: ultra fast recovery diode 500V APT14M100S MIC4452 Microsemi MOSFET 1000V POWER MOSFET Rise Time 1000V NS
    Text: APT14M100B APT14M100S 1000V, 14A, 0.90Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT14M100B APT14M100S APT14M100B ultra fast recovery diode 500V APT14M100S MIC4452 Microsemi MOSFET 1000V POWER MOSFET Rise Time 1000V NS

    APT24M120B2

    Abstract: APT24M120L MIC4452
    Text: APT24M120B2 APT24M120L 1200V, 24A, 0.63Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT24M120B2 APT24M120L O-264 O-247 APT24M120B2 APT24M120L MIC4452

    APT34M60B

    Abstract: APT34M60S MIC4452 AG124
    Text: APT34M60B APT34M60S 600V, 36A, 0.19Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT34M60B APT34M60S APT34M60B APT34M60S MIC4452 AG124

    APT8M80K

    Abstract: MIC4452
    Text: APT8M80K 800V, 8A, 1.35Ω MAX, N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT8M80K O-220 APT8M80K MIC4452

    Untitled

    Abstract: No abstract text available
    Text: APT34M60B APT34M60S 600V, 36A, 0.19Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT34M60B APT34M60S APT34M60B

    Untitled

    Abstract: No abstract text available
    Text: APT43M60B2 APT43M60L 600V, 45A, 0.15Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT43M60B2 APT43M60L O-264 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT7M120B APT7M120S 1200V, 8A, 2.1Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT7M120B APT7M120S

    Untitled

    Abstract: No abstract text available
    Text: APT37M100B2 APT37M100L 1000V, 37A, 0.33Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT37M100B2 APT37M100L O-264 O-247

    APT24M120B2

    Abstract: APT24M120L MIC4452
    Text: APT24M120B2 APT24M120L 1200V, 24A, 0.65Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT24M120B2 APT24M120L O-264 O-247 APT24M120B2 APT24M120L MIC4452

    Untitled

    Abstract: No abstract text available
    Text: APT84M50B2 APT84M50L 500V, 84A, 0.065Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT84M50B2 APT84M50L O-264 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT4M120K 1200V, 5A, 3.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT4M120K O-220