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    MOSFET, ENHANCEMENT, N CHANNEL, 30V Search Results

    MOSFET, ENHANCEMENT, N CHANNEL, 30V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    MOSFET, ENHANCEMENT, N CHANNEL, 30V Price and Stock

    Platt Luggage N

    Field Service Pallet with 24 Pockets
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    • 10 $32.31
    • 100 $26.92
    • 1000 $26.25
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    Step'n Components MS27488-0-1

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    Step'n Components MS27488-8-1

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    Step'n Components M81969/14-05

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    Step'n Components MS27488-8-3

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    Find more MOSFET, ENHANCEMENT, N CHANNEL, 30V price and stock on Findchips.com

    MOSFET, ENHANCEMENT, N CHANNEL, 30V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT7410 Preliminary Power MOSFET 30V, 24A N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UT7410 is an N-channel enhancement MOSFET, it uses UTC’s advanced technology to provide the customers with perfect RDS ON and low gate charge.


    Original     		PDF UT7410 UT7410 UT7410L-K08-3030-R UT7410G-K08-3030-R K08-3030: QW-R502-902

    25V 55A to-252

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3006 Power MOSFET 55A, 30V N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UT3006 is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , cost-effectiveness and high switching speed.


    Original     		PDF UT3006 UT3006 O-252 UT3006L-TN3-R UT3006G-TN3-R UT3006L-K08-5060-R UT3006G-K08-5060-R QW-R502-636 25V 55A to-252

    mosfet 2n4351

    Abstract: 2N4351
    Text: 2N4351 N-CHANNEL MOSFET The 2N4351 is an enhancement mode N-Channel Mosfet The 2N4351 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.


    Original     		PDF 2N4351 2N4351 100mA mosfet 2n4351

    LS4352

    Abstract: No abstract text available
    Text: LS4352 N-CHANNEL MOSFET The LS4352 is an enhancement mode N-Channel Mosfet The LS4352 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.


    Original     		PDF LS4352 2N4352 100mA

    bare Die mosfet

    Abstract: No abstract text available
    Text: LS4351 N-CHANNEL MOSFET The LS4351 is an enhancement mode N-Channel Mosfet The LS4351 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.


    Original     		PDF LS4351 2N4351 100mA bare Die mosfet

    2N4352

    Abstract: No abstract text available
    Text: 2N4352 N-CHANNEL MOSFET The 2N4352 is an enhancement mode N-Channel Mosfet The 2N4352 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.


    Original     		PDF 2N4352 2N4352 100mA

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTT75N03 POWER MOSFET 75A, 30V, N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UTT75N03 is an N-channel enhancement mode Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching and a minimum on-state resistance.


    Original     		PDF UTT75N03 UTT75N03 UTT75N03L-TN3-R UTT75N03G-TN3-R UTT75N03L-TND-R UTT75N03G-TND-R O-252at QW-R205-046

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3006 Preliminary Power MOSFET 55A, 30V N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UT3006 is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , cost-effectiveness and high switching speed.


    Original     		PDF UT3006 UT3006 O-252 UT3006L-TN3-R UT3006G-TN3-R QW-R502-636

    Untitled

    Abstract: No abstract text available
    Text: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3402A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone


    Original     		PDF GSM3402A, OT-23 Lane11

    Untitled

    Abstract: No abstract text available
    Text: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM1032, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone


    Original     		PDF GSM1032, OT-523 Lane11

    Untitled

    Abstract: No abstract text available
    Text: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4822WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line


    Original     		PDF GSM4822WS, Lane11

    Untitled

    Abstract: No abstract text available
    Text: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3030, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		PDF GSM3030, 0V/12A 0V/10A O-252-2L GSM3030DF O-252-2L) Lane11

    Untitled

    Abstract: No abstract text available
    Text: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6562, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		PDF GSM6562, GSM6562TSF Lane11

    Untitled

    Abstract: No abstract text available
    Text: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		PDF GSM3406A, OT-23 GSM3406AJZF OT-23) Lane11

    Untitled

    Abstract: No abstract text available
    Text: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3025S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent R DS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		PDF GSM3025S, O-252-2L Lane11

    Untitled

    Abstract: No abstract text available
    Text: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4936S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		PDF GSM4936S, GSM4936SSF Lane11

    Untitled

    Abstract: No abstract text available
    Text: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4134, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		PDF GSM4134, 0V/12A 0V/10A GSM4134SF Lane11

    Untitled

    Abstract: No abstract text available
    Text: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		PDF GSM3406S, OT-23-3L GSM3406SZF OT-23-3L) Lane11

    Untitled

    Abstract: No abstract text available
    Text: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		PDF GSM3400AS, OT-23 GSM3400ASJZF OT-23) Lane11

    Untitled

    Abstract: No abstract text available
    Text: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4412, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		PDF GSM4412, GSM4412SF Lane11

    Untitled

    Abstract: No abstract text available
    Text: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4822S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		PDF GSM4822S, GSM4822SSF Lane11

    Untitled

    Abstract: No abstract text available
    Text: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4210, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		PDF GSM4210, GSM4210SF Lane11

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTF3055 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION As an N-channel enhancement mode power MOSFET, the UTC UTF3055 is designed for low voltage, high speed switching applications in power supplies, converters and power motor controls


    Original     		PDF UTF3055 UTF3055 UTF3055L-AA3-R UTF3055G-AA3-R UTF3055L-TN3-R UTF3055G-TN3-R OT-223 O-252 QW-R502-318

    Untitled

    Abstract: No abstract text available
    Text: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6561, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		PDF GSM6561, GSM6561TSF Lane11