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    MOSF Search Results

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    MOSF Price and Stock

    Amphenol PCTEL GLHPDLTEMIMO-SF

    RF ANT 657.5MHZ DOME RP-SMA M
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GLHPDLTEMIMO-SF Bulk 14 1
    • 1 $217.12
    • 10 $215.275
    • 100 $215.275
    • 1000 $215.275
    • 10000 $215.275
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    RS GLHPDLTEMIMO-SF Bulk 9 14 Weeks 1
    • 1 $162.46
    • 10 $162.46
    • 100 $162.46
    • 1000 $162.46
    • 10000 $162.46
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    Richardson RFPD GLHPDLTEMIMO-SF 10
    • 1 -
    • 10 $260.2
    • 100 $260.2
    • 1000 $260.2
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    Master Electronics GLHPDLTEMIMO-SF 4
    • 1 $248.18
    • 10 $234.58
    • 100 $231.07
    • 1000 $231.07
    • 10000 $231.07
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    Infineon Technologies AG SICMOSFET

    SILICON CARBIDE MOSFET KIT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SICMOSFET 9 1
    • 1 $123.88
    • 10 $123.88
    • 100 $123.88
    • 1000 $123.88
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    Amphenol PCTEL GLHPDLTEMIMO-SF-MM

    RF ANT 789MHZ DOME RP-SMA MAGN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GLHPDLTEMIMO-SF-MM Bulk 8 1
    • 1 $215.28
    • 10 $215.28
    • 100 $215.28
    • 1000 $215.28
    • 10000 $215.28
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    RS GLHPDLTEMIMO-SF-MM Bulk 14 Weeks 10
    • 1 -
    • 10 $507.62
    • 100 $451.77
    • 1000 $451.77
    • 10000 $451.77
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    Richardson RFPD GLHPDLTEMIMO-SF-MM 10
    • 1 -
    • 10 $260.2
    • 100 $260.2
    • 1000 $260.2
    • 10000 $260.2
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    Master Electronics GLHPDLTEMIMO-SF-MM 6
    • 1 $255.86
    • 10 $241.34
    • 100 $237.72
    • 1000 $237.72
    • 10000 $237.72
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    Amphenol PCTEL BGLHPDLTEMIMO-SF-MM

    RF ANT 829MHZ DOME RP-SMA MAGN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BGLHPDLTEMIMO-SF-MM Box 6 1
    • 1 $217.12
    • 10 $215.275
    • 100 $215.275
    • 1000 $215.275
    • 10000 $215.275
    		Buy Now
    RS BGLHPDLTEMIMO-SF-MM Bulk 14 Weeks 1
    • 1 $507.62
    • 10 $451.77
    • 100 $451.77
    • 1000 $451.77
    • 10000 $451.77
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    Richardson RFPD BGLHPDLTEMIMO-SF-MM 10
    • 1 -
    • 10 $260.2
    • 100 $260.2
    • 1000 $260.2
    • 10000 $260.2
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    Amphenol PCTEL GL4X4MIMO-SF

    RF ANT 1.5865GHZ DOME RP-SMA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GL4X4MIMO-SF Box 3 1
    • 1 $169.37
    • 10 $160.962
    • 100 $160.962
    • 1000 $160.962
    • 10000 $160.962
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    RS GL4X4MIMO-SF Bulk 14 Weeks 10
    • 1 -
    • 10 $384.75
    • 100 $384.75
    • 1000 $384.75
    • 10000 $384.75
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    Richardson RFPD GL4X4MIMO-SF 25
    • 1 -
    • 10 -
    • 100 $194.56
    • 1000 $194.56
    • 10000 $194.56
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    Master Electronics GL4X4MIMO-SF 4
    • 1 $185.57
    • 10 $177.35
    • 100 $174.1
    • 1000 $174.1
    • 10000 $174.1
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    Find more MOSF price and stock on Findchips.com

    MOSF Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MOSFD200200R100-L Sensitron Semiconductor Fast Switching Solid State Relay Original PDF
    MOSFETIRF6602 International Rectifier DirectFET Power MOSFET(Vdss=20V) Original PDF
    MOSFET Parameters NXP Semiconductors AN11158 - Understanding power MOSFET data sheet parameters Original PDF

    MOSF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TPC8075 MOSFETs Silicon N-Channel MOS U-MOS TPC8075 1. Applications • Lithium-Ion Secondary Batteries • Notebook PCs • Mobile Equipments 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 2.1 mΩ (typ.) (VGS = 10 V)


    Original     		TPC8075 PDF

    Untitled

    Abstract: No abstract text available
    Text: TPN22006NH MOSFETs Silicon N-channel MOS U-MOS-H TPN22006NH 1. Applications • Switching Voltage Regulators • Motor Drivers • DC-DC Converters 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate charge: QSW = 4.5 nC (typ.)


    Original     		TPN22006NH PDF

    TL1454

    Abstract: No abstract text available
    Text: TL1454, TL1454Y DUAL-CHANNEL PULSE-WIDTH-MODULATION PWM CONTROL CIRCUIT SLVS086B – APRIL 1995 – REVISED NOVEMBER 1997 D D D D D D D D, N OR PW PACKAGE (TOP VIEW) Two Complete PWM Control Circuits Outputs Drive MOSFETs Directly Oscillator Frequency . . . 50 kHz to 2 MHz


    Original     		TL1454, TL1454Y SLVS086B TL1454 TL1454EVM-085 SLVA061 SLVA057 SLVA059 SLVU012, PDF

    Untitled

    Abstract: No abstract text available
    Text: TPH8R80ANH MOSFETs Silicon N-channel MOS U-MOS-H TPH8R80ANH 1. Applications • DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 13 nC (typ.)


    Original     		TPH8R80ANH PDF

    Untitled

    Abstract: No abstract text available
    Text: TPD7211F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7211F Power MOSFET Gate Driver for half-bridge TPD7211F is a Power MOSFET gate driver for half-bridge circuit. BiCD process is applied on this product. Features z


    Original     		TPD7211F TPD7211F SON8-P-0303-0 7211F PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA PHOTO RELAY TLP595A Unit in mm Telecommunication Data Acquisition Measurement Instrumentation The Toshiba TLP595A consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a six lead plastic DIP package. The


    OCR Scan     		TLP595A 300mA 2500Vrms UL1577, E67349 TLP595A PDF

    transistor 2SK1603

    Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358
    Text: H it'll Voltage M SFKTs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all


    OCR Scan     		OT-89, T0-220 2SK1488 2SK1865SM 2SK1531 2SK1745 2SK2057 2SK1544 O-220AB 2SK1723 transistor 2SK1603 2SK1603 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358 PDF

    FN521

    Abstract: FN 521 UFN522 UFN523 UFN520
    Text: POWER MOSFET TRANSISTORS UFN520 100 Volt, 0.3 Ohm N-Channel UFN522 UFN523 DESCRIPTION The U nitrode power M O SFET desig n u tilizes the m ost a dvan ced technology available. This efficient design a ch ieves a very low Rosiom an d a high tran scon d u ctan ce.


    OCR Scan     		UFN520 UFN522 UFN523 UFN520 UFN521 UFN522 FN521 FN 521 UFN523 PDF

    UFNF430

    Abstract: diode ed 2437 UFNF432
    Text: POWER MOSFET TRANSISTORS U F N F 4 3 0 U F N F 4 3 1 500 Volt, 1.5 Ohm N-Channel U F N F 4 3 2 U F N F 4 3 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rostom and a high transconductance.


    OCR Scan     		UFNF430 UFNF431 UFNF432 UFNF433 UFNF430 diode ed 2437 UFNF432 PDF

    d3004 transistor

    Abstract: P3004 mofset
    Text: SN75372 DUAL MOSFET DRIVER SLLSQ25A- P3004. JULY 1986 • Dual Circuits Capable of Driving Hlgh-Capacltance Loads at High Speeds • Output Supply Voltage Range up to 24 V D OR P PACKAGE TOP VIEW • Low Standby Power Dissipation 1A[ 1 E[ 2 U V CC1 7 ]1 Y


    OCR Scan     		SN75372 SLLSQ25A- P3004. d3004 transistor P3004 mofset PDF

    ufn440

    Abstract: UFN441
    Text: POWER MOSFET TRANSISTORS UFN440 UFN441 UFN442 UFN443 500 Volt, 0.85 Ohm N-Channel FEA TU RES D ESCRIPTIO N • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low R dscow and a high transconductance.


    OCR Scan     		UFN440 UFN441 UFN442 UFN443 UFN441 UFN442 PDF

    UFN432

    Abstract: mosfet UFN432 UFN 432 UFN431 UFN433
    Text: POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel UFN430 UFN431 UFN432 UFN433 FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance.


    OCR Scan     		UFN430 UFN431 UFN432 UFN433 UFN430 UFN431 UFN432 mosfet UFN432 UFN 432 UFN433 PDF

    UFN450

    Abstract: UFN451
    Text: POWER MOSFET TRANSISTORS Hfflg? 500 Volt, 0.4 Ohm N-Channel UFN452 UFN453 DESCRIPTION The U nitrode power M O SFET desig n u tilizes the m ost a dvan ced technology available. This efficie n t design a ch ieves a very low Rosiom and a high tran scon d u ctan ce.


    OCR Scan     		UFN452 UFN453 UFN450 UFN451 UFN452 UFN450 UFN451 PDF

    toshiba 2505 dd

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TPD1028AS TOSHIBA INTELLIGENT PO W ER DEVICE SILICON MONOLITHIC PO W ER MOS IC TPD1028AS LOW -SIDE SWITCH FOR M O TO R , SOLENOID A N D LAM P DRIVE TPD1028AS is a monolithic power IC for low-side switch. The IC has a vertical MOSFET output which can be directly


    OCR Scan     		TPD1028AS TPD1028AS toshiba 2505 dd PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TLP3540 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET T L P 3 540 Unit in mm M EM O R Y TESTERS LOGIC 1C TESTERS DATA RECORDING EQUIPMENT 7 6 5 CT1 n_ n l~P MEASURING EQUIPMENT TLP3540 is a photorelay and consists of a GaAs infrared emitting diode optically coupled to a photo-MOSFET in a 8-pin DIP package.


    OCR Scan     		TLP3540 TLP3540 5X1010 PDF

    2sj239

    Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
    Text: MOSFET Product Matrix VdssM * 100 *1 20 60 Id A * 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]


    OCR Scan     		2SK1112 2SK1719 2SJ239 2SK2030 2SK1079 TE12L) 2SK1078 2SJ238 2sj239 TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL PDF

    lts 542

    Abstract: UFN540 FN640
    Text: POWER MOSFET TRANSISTORS U F N 5 4 0 U F N 5 4 1 100 Volt, 0.0 85 Ohm N-Channel U F N 5 4 2 U F N 5 4 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.


    OCR Scan     		UFN540 UFN541 UFN542 UFN543 lts 542 UFN540 FN640 PDF

    ufn330

    Abstract: No abstract text available
    Text: POWER MOSFET TRANSISTORS 400 Volt, 1.0 Ohm N-Channel UFN332 UFN333 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roscom and a high transconductance. FEATURES • Fast Switching


    OCR Scan     		UFN332 UFN333 UFN330 UFN331 UFN332 ufn330 PDF

    120v battery charger Schematic Diagram

    Abstract: schematic diagram 48V battery charger regulator schematic diagram 48V automatic battery charger battery charger schematic 24V
    Text: y UNITRODE Advanced Low Voltage Boost Controller With Backup Charger UCC29401 UCC39401 ADVANCE INFORMATION FEATURES DESCRIPTION • Synchronous Conversion with Internal MOSFETs The UCC39401 is a multi-output single inductor synchronous boost control­ ler optimized to operate from a low input voltage such as a single or dual


    OCR Scan     		200mW UCC29401 UCC39401 UCC39401 120v battery charger Schematic Diagram schematic diagram 48V battery charger regulator schematic diagram 48V automatic battery charger battery charger schematic 24V PDF

    ufn1130

    Abstract: No abstract text available
    Text: POWER MOSFET TRANSISTORS 700 Volt, 3.5 Ohm N-Channel UFNU3° FEATU RES DESCRIPTION • • • • • • This new U nitrode power MOSFET utilizes the latest high voR&ge advanced technology The efficient design achieves a very low Rosion. a n d a & ig ti tranSe^rvductance.


    OCR Scan     		UFN1130 ufn1130 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TPD1035F TOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS IC TPD1035F LOW-SIDE POWER SWITCH FOR MOTOR, SOLENOID, AND LAMP DRIVERS TPD1035F is a monolithic power IC for low-side switch. The IC has a vertical MOSFET output which can be directly


    OCR Scan     		TPD1035F TPD1035F PDF

    UFNZ40

    Abstract: No abstract text available
    Text: UFNZ40 UFNZ42 POWER MOSFET TRANSISTORS 50 Volt, 0.028 Ohm N-Channel FEATURES DESCRIPTION • • • • C o m p a c t Plastic Package Fast S w itc h in g L o w D rive C urrent Ease o f Paralleling These lo w v o lta g e p o w e r M O S FETS have been designed fo r o p tim u m p e rfo rm a n c e in lo w


    OCR Scan     		UFNZ40 UFNZ42 UFNZ40, PDF

    UFN140

    Abstract: UFN143 kd 617
    Text: POWER MOSFET TRANSISTORS “ ui 100 Volt, 0.085 Ohm N-Channel UFN142 ufni43 FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.


    OCR Scan     		UFN142 ufni43 UFN140 UFN141 UFN142 UFN143 Q2173 UFN140 UFN143 kd 617 PDF

    5v to 20v pwm amplifier 40khz

    Abstract: 100KRPM
    Text: UC1625 UC3625 U IM IT R O O E Brushless DC Motor Controller FEATURES Drives Power MOSFETs or Power Darlingtons Directly 50V Open Collector High-Side Drivers Latched Soft Start High-speed Current-Sense Amplifier with Ideal Diode DESCRIPTION The UC1625 and UC3625 motor controller ICs integrate most of


    OCR Scan     		UC1625 UC3625 UC3625 140ns. 140ns 5v to 20v pwm amplifier 40khz 100KRPM PDF