MOS RM3 Search Results

MOS RM3 Result Highlights (5)

Part	Manufacturer	Description
TPHR7404PU	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL

MOS RM3 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
mitsubishi PM20CSJ060 Abstract: mitsubishi PM30CSJ060 Mitsubishi Electric IGBT MODULES Mitsubishi IPM module PS11015 mitsubishi power Modules PM30ctj060-3 m57962l M57959L/M57962L pm25rsb120 Text: Power Modules Power Modules MOS Power Modules BIPOLAR Preceding Page MITSUBISHI ELECTRIC CORPORATION Power Modules MOS Guidance IGBT Modules CIB Converter Inverter Brake Modules Intelligent Power Modules (IPMs) Hybrid ICs Applications Preceding Page © MITSUBISHI ELECTRIC CORPORATION	Original	RM50DA/CA/C1A-XXS RM25HG-24S RM400HA-24S RM35HG-34S RM400HV-34S RM300CA-9W RM60SZ-6S RM100SZ-6S RM10TN-H mitsubishi PM20CSJ060 mitsubishi PM30CSJ060 Mitsubishi Electric IGBT MODULES Mitsubishi IPM module PS11015 mitsubishi power Modules PM30ctj060-3 m57962l M57959L/M57962L pm25rsb120	PDF
PM30RSF060 Abstract: CM100U-12F M57962AL mitsubishi PM30CSJ060 78 MOS PM30ctj060-3 CM150U-12F cm200u12f CM600HU-24F M57963L Text: 三菱パワーモジュール MOS 活用の手引き三菱半導体〈パワーモジュール MOS〉品種一覧表形名 •IGBTモジュール ¡Uシリーズ CM600HU-12H CM400HU-24H CM600HU-24H CM75DU-12H CM100DU-12H CM150DU-12H CM200DU-12H CM300DU-12H	Original	CM600HU-12H CM400HU-24H CM600HU-24H CM75DU-12H CM100DU-12H CM150DU-12H CM200DU-12H CM300DU-12H CM400DU-12H CM50DU-24H PM30RSF060 CM100U-12F M57962AL mitsubishi PM30CSJ060 78 MOS PM30ctj060-3 CM150U-12F cm200u12f CM600HU-24F M57963L	PDF
calculation of IGBT snubber Abstract: darlington pair MODULE 200A RC VOLTAGE CLAMP snubber circuit ipm darlington RCD snubber mitsubishi semiconductors power modules mos IGBT snubber mitsubishi semiconductors inverter power modules CM100DY-24H inverter circuit using IGBT module Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS GENERAL CONSIDERATIONS FOR IGBT AND INTELLIGENT POWER MODULES 3.0 General Considerations for IGBT and Intelligent Power Modules H-Series IGBT and Intelligent Power Modules are based on advanced third generation IGBT and free-wheel	Original	00V/100A calculation of IGBT snubber darlington pair MODULE 200A RC VOLTAGE CLAMP snubber circuit ipm darlington RCD snubber mitsubishi semiconductors power modules mos IGBT snubber mitsubishi semiconductors inverter power modules CM100DY-24H inverter circuit using IGBT module	PDF
igbt PM20CSJ060 Mitsubishi Abstract: pwm INVERTER welder smps welder inverter inverter welder circuit IGBT welder circuit AC welder IGBT circuit vvvf motor pwm welder Mitsubishi IPM module pm150csa120 Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS MAIN APPLICATIONS FOR POWER MODULES 2.0 Main Applications for Power Modules Power modules are now commonly used in both converter and inverter circuits. As shown in the application chart in Figure 2.1, the main application of the IGBT is for use	Original	CM50TU-24H CM50DU-24H CM75TU-24H CM75DU-24H CM100TU-24H CM100DU-24H CM150DU-24H PM10CZF120 PM10RSH120 igbt PM20CSJ060 Mitsubishi pwm INVERTER welder smps welder inverter inverter welder circuit IGBT welder circuit AC welder IGBT circuit vvvf motor pwm welder Mitsubishi IPM module pm150csa120	PDF
XH035 Abstract: No abstract text available Text: 0.35 m Process Family: XH035 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions DESCRIPTION The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target applications are standard cell, semi-custom and	Original	XH035 XH035 35-micron	PDF
XH035 Abstract: mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3 Text: 0.35 µm CMOS Process Family XH035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions Description The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target	Original	XH035 XH035 35-micron mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3	PDF
CMOS spice model Abstract: MOS RM3 Spice model inductor BSIM3v3.2 XH035 XH035 library w10 jfet mos rm3 data PMOS "X-Fab" Core cell library Text: 0.35 µm CMOS Process Family XH035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions Description The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target	Original	XH035 XH035 35-micron CMOS spice model MOS RM3 Spice model inductor BSIM3v3.2 XH035 library w10 jfet mos rm3 data PMOS "X-Fab" Core cell library	PDF
MOS RM3 Abstract: No abstract text available Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing	Original	XO035 XO035 35-micron MOS RM3	PDF
MOS RM3 Abstract: mos rm3 data XO035 Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well" Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing	Original	XO035 XO035 35micron MOS RM3 mos rm3 data Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well"	PDF
mos rm3 data Abstract: MOS RM3 BSIM3V3 XH035 RM4L bsim3 dw-mo MICRON POWER RESISTOR Mos Q100 analog devices transistor tutorials Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and	Original	XA035 XA035 35-micron XH035 mos rm3 data MOS RM3 BSIM3V3 RM4L bsim3 dw-mo MICRON POWER RESISTOR Mos Q100 analog devices transistor tutorials	PDF
XH035 library Abstract: depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 XH035 analog devices transistor tutorials MOS RM3 Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and	Original	XA035 XA035 35-micron XH035 XH035 library depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 analog devices transistor tutorials MOS RM3	PDF
MOS RM3 Abstract: mos rm3 data "X-Fab" Core cell library ESD "p-well" n-well" XH035 0.18 um CMOS Spiral Inductor technology bsim3v3 RM3 transistors Q100 analog devices transistor tutorials Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and	Original	XA035 XA035 35-micron XH035 MOS RM3 mos rm3 data "X-Fab" Core cell library ESD "p-well" n-well" 0.18 um CMOS Spiral Inductor technology bsim3v3 RM3 transistors Q100 analog devices transistor tutorials	PDF
Untitled Abstract: No abstract text available Text: 0.35 m Process Family: XA035 0.35 Micron High Temperature Modular CMOS Technology DESCRIPTION The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and Industrial products with temperature range up to	Original	XA035 XA035 35-micron	PDF
CMOS Abstract: MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model Text: 0.18 µm CMOS Process XC018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular RF enabled CMOS Logic and Analog Technology 0.18-micron drawn gate length N-well process, modules are also available for metal-insulatormetal capacitors, high resistive poly, dual gate	Original	XC018 18-micron XC018 CMOS MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model	PDF

bsim3 0.18 micron parameters Abstract: bsim3 model for 0.18 micron technology for hspice 0.18 um CMOS parameters bsim3 model model values for 0.18 micron technology cmos XH018 CMOS Process Family model values for 0.25 micron technology cmos aadcc01_3v3 0.18-um CMOS technology length and width Text: 0.18 µm CMOS Process Family XH018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular Mixed Signal HV CMOS Technology Description The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six	Original	XH018 XH018 18-micron bsim3 0.18 micron parameters bsim3 model for 0.18 micron technology for hspice 0.18 um CMOS parameters bsim3 model model values for 0.18 micron technology cmos CMOS Process Family model values for 0.25 micron technology cmos aadcc01_3v3 0.18-um CMOS technology length and width	PDF
CMOS Process Family Abstract: XH018 bsim3 bsim3 0.18 micron parameters analog devices transistor tutorials TRANSISTORS BJT list IMD2 transistor XP018 process flow diagram "X-Fab" Core cell library Text: 0.18 µm CMOS Process Family XP018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron CMOS Power Management Process Technology Description The XP018 series is X-FAB’s 0.18 micron Modular Mixed Signal CMOS Power Management Technology. Based upon the industrial standard single	Original	XP018 XP018 18-micron CMOS Process Family XH018 bsim3 bsim3 0.18 micron parameters analog devices transistor tutorials TRANSISTORS BJT list IMD2 transistor process flow diagram "X-Fab" Core cell library	PDF
rpp1k1 Abstract: No abstract text available Text: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate	Original	XT018 XT018 18-micron rpp1k1	PDF
CMOS Abstract: hv 102 mos fet transistor varactor diode model in ADS bsim3 ADS varactor diode 0.18 micron 1.8V pspice model BSIM3V3 bsim3 model bsim3 model for 0.18 micron technology for hspice N-Channel jfet 100V depletion Text: 0.6 m CMOS Process XC06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features The XC06 Series completes X-FAB‘s 0.6 Micron Modular Mixed Signal Technology with embedded Non Volatile Memory and High Voltage options.	Original		PDF
SK 18752 Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751 Text: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,	Original	O03ED0 dete7837 H1-O03ED0-0805020NM SK 18752 SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751	PDF
XP018 Abstract: No abstract text available Text: 0.18 m Process Family: XP018 0.18 Micron CMOS Analog Mixed-Signal Process Technology DESCRIPTION The XP018 series is X-FAB’s 0.18 micron Modular Mixed Signal CMOS High Performance Analog Mixed-Signal Technology. Based upon the industrial standard single	Original	XP018 XP018 18-micron	PDF
SD MOSFET DRIVE DATASHEET 4468 8 PIN Abstract: SK 18752 ctx12s fgt313 18752 SANKEN sla6805m fn651 sla6101 SK 18751 str20012 Text: 半导体产品总目录 Sanken Electric Co., Ltd. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo 171-0021, Japan 电话：81-3-3986-6164 传真：81-3-3986-8637 海外销售办事处亚洲新加坡 Sanken Electric Singapore Pte. Ltd. 150 Beach Road, #14-03 The Gateway West, Singapore 189720	Original	O03CC0 Room3202, H1-O03CC0-1008031NM SD MOSFET DRIVE DATASHEET 4468 8 PIN SK 18752 ctx12s fgt313 18752 SANKEN sla6805m fn651 sla6101 SK 18751 str20012	PDF
nmos transistor 0.35 um Abstract: npn pnp rf transistor bipolar cross reference l24c using a zener diode as a varicap NMOS depletion pspice model bsim3 model for 0.18 micron technology for hspice bsim3 model MOS RM3 QS 100 NPN Transistor analog devices transistor tutorials Text: 0.6 µm BiCMOS Process Family XHB06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular HV BCD Technology Description The XHB06 is X-FAB's 0.6 Micron High-Voltage Bipolar CMOS DMOS BCD Technology, optimized for applications requiring operating voltages of 5V to 30V. Main target applications are power	Original	XHB06 XHB06 nmos transistor 0.35 um npn pnp rf transistor bipolar cross reference l24c using a zener diode as a varicap NMOS depletion pspice model bsim3 model for 0.18 micron technology for hspice bsim3 model MOS RM3 QS 100 NPN Transistor analog devices transistor tutorials	PDF
TFK 312 Abstract: MN6221 MOS RM3 MN6221TA TFK 317 TFK 4 314 tfk 4 301 N6221 6221 ic rm11 Text: MOS 1C, LS I MN6221 M N6221 • 7 7 - A ^ É f f l C M O S / C M O S Circuit for Electronic Melody-Alarm Generator H 1St ^ /D e sc rip tio n U n i t • mm MN62211± , ROM, t ^ « O Î Î S iS Æ H * » , Atlfàm i l S ' I î F / o T' !&, ttiÎJ'ê'ÆElï#, If H H ïfî,	OCR Scan	MN6221 N6221 MN62211± MN6221 35typ. N6221W TFK 312 MOS RM3 MN6221TA TFK 317 TFK 4 314 tfk 4 301 N6221 6221 ic rm11	PDF
2SJ460 Abstract: S72 MOS Text: p ^ - v t ^ n v io s 2 S J 4 6 0 1 ± 2 .5 V E i i ^ ' f U ^ # m o $ > F E T T '& U , A.O f i i / L r t i t t f S Ü Œ T 'lE f t T ' f , Ü T , *»o 7 S ift Ì # § S 'r > ^ 7 x - ^ @ J Ì T § f ê ir g T 'f o IK o t f- h i 2 .5 V T ' i E i i l T ' ^ ^ o	OCR Scan	2SJ460 2SJ460 S72 MOS	PDF

MOS RM3 Search Results

MOS RM3 Result Highlights (5)

MOS RM3 Datasheets Context Search

mitsubishi PM20CSJ060

PM30RSF060

calculation of IGBT snubber

igbt PM20CSJ060 Mitsubishi

XH035

XH035

CMOS spice model

MOS RM3

MOS RM3

mos rm3 data

XH035 library

MOS RM3

Untitled

CMOS

bsim3 0.18 micron parameters

CMOS Process Family

rpp1k1

CMOS

SK 18752

XP018

SD MOSFET DRIVE DATASHEET 4468 8 PIN

nmos transistor 0.35 um

TFK 312

2SJ460