Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOS RAMS Search Results

    MOS RAMS Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOS RAMS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOS Clock Driver

    Abstract: No abstract text available
    Text: DS3245 Quad MOS Clock Driver General Description Features The DS3245 is a quad bipolar-to-MOS clock driver with TTL compatible inputs It is designed to provide high output current and voltage capabilities necessary for optimum driving of high capacitance N-channel MOS memory systems


    Original
    PDF DS3245 DS3245J MOS Clock Driver

    C1995

    Abstract: DS3245 DS3245J DS3245N J16A N16A
    Text: DS3245 Quad MOS Clock Driver General Description Features The DS3245 is a quad bipolar-to-MOS clock driver with TTL compatible inputs It is designed to provide high output current and voltage capabilities necessary for optimum driving of high capacitance N-channel MOS memory systems


    Original
    PDF DS3245 C1995 DS3245J DS3245N J16A N16A

    Untitled

    Abstract: No abstract text available
    Text: DS75365 DS75365 Quad TTL-to-MOS Driver Literature Number: SNOSBR5A DS75365 Quad TTL-to-MOS Driver Y The DS75365 is a quad monolithic integrated TTL-to-MOS driver and interface circuit that accepts standard TTL input signals and provides high-current and high-voltage output


    Original
    PDF DS75365 DS75365

    MM5280

    Abstract: ds75361 DS75361N C1995 MM5270 ds7536
    Text: DS75361 Dual TTL-to-MOS Driver General Description Features The DS75361 is a monolithic integrated dual TTL-to-MOS driver interface circuit The device accepts standard TTL input signals and provides high-current and high-voltage output levels for driving MOS circuits It is used to drive


    Original
    PDF DS75361 MM5270 MM5280 MM5280 DS75361N C1995 ds7536

    et 1103

    Abstract: DS75361
    Text: DS75361 Dual TTL-to-MOS Driver General Description Features The DS75361 is a monolithic integrated dual TTL-to-MOS driver interface circuit The device accepts standard TTL input signals and provides high-current and high-voltage output levels for driving MOS circuits It is used to drive


    Original
    PDF DS75361 MM5270 MM5280 et 1103

    Untitled

    Abstract: No abstract text available
    Text: DS75365 Quad TTL-to-MOS Driver Y The DS75365 is a quad monolithic integrated TTL-to-MOS driver and interface circuit that accepts standard TTL input signals and provides high-current and high-voltage output levels suitable for driving MOS circuits It is used to drive


    Original
    PDF DS75365 DS75365N

    Untitled

    Abstract: No abstract text available
    Text: DS3245 DS3245 Quad MOS Clock Driver Literature Number: SNOSBO2A DS3245 Quad MOS Clock Driver General Description Features The DS3245 is a quad bipolar-to-MOS clock driver with TTL compatible inputs It is designed to provide high output current and voltage capabilities necessary for optimum driving


    Original
    PDF DS3245 DS3245

    Untitled

    Abstract: No abstract text available
    Text: DS75361 DS75361 Dual TTL-to-MOS Driver Literature Number: SNOSBR4A DS75361 Dual TTL-to-MOS Driver General Description Features The DS75361 is a monolithic integrated dual TTL-to-MOS driver interface circuit The device accepts standard TTL input signals and provides high-current and high-voltage


    Original
    PDF DS75361 DS75361 MM5270 MM5280

    intel 3207

    Abstract: DS75365N C1995 DS75365 DS75365WM M16B N16A vc2f A24V-4
    Text: DS75365 Quad TTL-to-MOS Driver Y General Description Y The DS75365 is a quad monolithic integrated TTL-to-MOS driver and interface circuit that accepts standard TTL input signals and provides high-current and high-voltage output levels suitable for driving MOS circuits It is used to drive


    Original
    PDF DS75365 intel 3207 DS75365N C1995 DS75365WM M16B N16A vc2f A24V-4

    101490

    Abstract: P22n HM50464P-12 50464 ram
    Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY


    OCR Scan
    PDF ADE-40 101490 P22n HM50464P-12 50464 ram

    rca thyristor manual

    Abstract: HN623258 101490
    Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j


    OCR Scan
    PDF

    sun hold RAS 0610

    Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
    Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information


    OCR Scan
    PDF A16685-7 EMTR1147 sun hold RAS 0610 oki Logic Motorola transistor 7144 MSC2304 M5M41000

    mcm2018a

    Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
    Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information


    OCR Scan
    PDF A16685-7 EMTR1147 mcm2018a sun hold RAS 0610 cqq 765 RT IC HX 710B U256D

    itt 2501

    Abstract: signetics 2501 2501N MOS-RAM
    Text: S ig n e tic s Memories - MOS-RAMS 2501—256 Bit Read/Write Static MOS RAM 256 x 1 C O N N E C TIO N D IA G R A M G E N E R A L DE SC R IPTIO N The 2501 em ploys enhancem ent mode p-channet MOS devices integrated on a single m o n o lith ic chip. A D D R ESS 6 [ i .


    OCR Scan
    PDF

    cleanthrough

    Abstract: No abstract text available
    Text: E2G0008-17-41 O K I Semiconductor MOS Memory Handling Guideline MOS Memory Handling Guideline 1. Static Electricity Precautions The input impedance is generally high in MOS memories so that the voltage is controlled through the oxide film in a transition gate. This makes the insulation very susceptible to breakdown due


    OCR Scan
    PDF E2G0008-17-41 FRW-17 cleanthrough

    2107B

    Abstract: F 5M 365 R intel 3205 Intel 2107B
    Text: irry 3245 QUAD TTL-TO-MOS DRIVER FOR 4K N-CHANNEL MOS RAMs • Fully Compatible with 4K RAMs Without Requiring Extra Supply or External Devices ■ High Speed, 32 nsec Max. — Delay + Transition Time ■ Low Power — 75mW Typical Per Channel ■ High Density — Four Drivers in


    OCR Scan
    PDF 2107B 2107B F 5M 365 R intel 3205 Intel 2107B

    vh07

    Abstract: 9646
    Text: 9646/0026 DUAL MOS C LO C K DRIVER F A IR C H IL D LINEAR IN T E G R A T E D C IR C U IT GENERAL DESCRIPTION — The 9646/0026 is a low-cost m onolithic dual MOS clock driver, designed for high speed driving of highly capacitive loads in a MOS system. The


    OCR Scan
    PDF DS0026. 14-PIN vh07 9646

    256X4

    Abstract: 1024x4 AM2168 Am91L22
    Text: MOS Memory MOS Memory Functional Index and Selection Guide 1K STATIC RAMS Part Number Am 9122-25 A m 9122-35 Am91L22-35 Am91 L22-45 Am9122-60 Organization 256 x 4 256 x 4 256 x 4 256x4 256 x 4 Acceee Tlme ns 25 35 36 45 60 Power DMpation(mW ) Standby - Active


    OCR Scan
    PDF Am91L22-35 L22-45 Am9122-60 256x4 Am2147 Am2147-45 Am2147-65 Am2147-70 Am21L47-45 Am21147 1024x4 AM2168 Am91L22

    MM2111

    Abstract: MM2111N MM2111-1N IVIM2111 MM2111-2N MM2111D mm21111 RRN2 Mm2111-1
    Text: MM2111, M M 2111-1, MM2111-2 MOS RAMs NATIONAL MM2111, MM2111-1, MM21TI-2 1 0 2 4 -bit 2 5 6 * 4 static MOS RAM w ith common I/O and output disable general description features The National IVIM2111 is a 256 by 4 static random access memory element fabricated using N-channel


    OCR Scan
    PDF MM2111, MM2111-1, MM21TI-2 1024-bit IVIM2111 100pF MM2111 MM2111N MM2111-1N MM2111-2N MM2111D mm21111 RRN2 Mm2111-1

    ram 4044

    Abstract: EMM Semi 4044 4044 RAM memory 4044 DC 4044 4044-UCA 4044-UCB L4044 L4044-UCA
    Text: PRELIMINARY SPECIFICATION E m 4044 m S E M 4K STATIC N-MOS RAM 4096 x 1, 450 ns, TTL In/Out I FEATURES • • • • • • • • • GENERAL DESCRIPTION SEMI’s 4044 RAMs are fu lly STATIC 4096 word X 1 bit N-MOS Random Access Memories— requiring no


    OCR Scan
    PDF 18-pin ram 4044 EMM Semi 4044 4044 RAM memory 4044 DC 4044 4044-UCA 4044-UCB L4044 L4044-UCA

    UPD4216805L

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT / i P D 4 2 S 16805L, 4 2 1 6 8 0 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE D escription The ^PD42S16805L, 4216805L are 2 097 152 words by 8 bits dynamic C MOS RAMs with optional hyper page


    OCR Scan
    PDF 16805L, uPD42S16805L uPD4216805L 42S16805L, 4216805L 28-pin PD42S16805L-A60, 4216805L-A60 /PD42S16805L-A70,

    HM6788P-25

    Abstract: 6788P s12045 28-pin SOJ SRAM
    Text: • RELIABILITY OF HITACHI 1C MEMORIES 1. STRUCTURE IC memories are basically classified into bipolar type and MOS type and utilized effectively by their characteristics. The characteristic o f bipolar memo­ ries is high speed but small capacity, instead, MOS


    OCR Scan
    PDF

    CDP18S601

    Abstract: CDP1802CD MPM-206 RCA cosmac 1802 CD4061 CDP18S012 CDP1802CE RCA-CDP1802 im6508 CDP18S007
    Text: RCA COS/MOS Memories, Microprocessors, and Support Systems This DATABOOK contains complete technical in­ formation on the full line of COS/MOS memory and microprocessor integrated circuits, COSMAC microboard computer systems, and COSMAC microprocessor support systems available from


    OCR Scan
    PDF 132nd CDP18S601 CDP1802CD MPM-206 RCA cosmac 1802 CD4061 CDP18S012 CDP1802CE RCA-CDP1802 im6508 CDP18S007

    o607

    Abstract: No abstract text available
    Text: DS75361 £9 National Semiconductor DS75361 Dual TTL-to-MOS Driver General Description Features The DS75361 is a monolithic integrated dual TTL-to-MOS driver interface circuit. The device accepts standard TTL input signals and provides high-current and high-voltage


    OCR Scan
    PDF DS75361 DS75361 MM5270 MM5280. o607