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    MOS POWER 823 Search Results

    MOS POWER 823 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLF278C Rochester Electronics VHF power MOS transistor Visit Rochester Electronics Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    MOS POWER 823 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: APT6017B2LL APT6017LLL 600V 35A 0.170W B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		PDF APT6017B2LL APT6017LLL O-264 O-264 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT6017B2FLL APT6017LFLL 600V 35A 0.170W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		PDF APT6017B2FLL APT6017LFLL O-264 O-264 O-247

    XP151A03A7MR

    Abstract: No abstract text available
    Text: Power MOS FET ◆N-Channel Power MOS FET •Applications ◆DMOS Structure ●Notebook PCs ◆Low On-State Resistance: 0.17Ω max ●Cellular and portable phones ●On-board power supplies ◆Ultra High-Speed Switching ●Li-ion battery systems ◆SOT-23 Package


    Original     		PDF NSOT-23 XP151A03A7MR OT-23

    Untitled

    Abstract: No abstract text available
    Text: APT6017JLL 600V POWER MOS 7TM Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel


    Original     		PDF APT6017JLL OT-227

    Untitled

    Abstract: No abstract text available
    Text: APT6017JLL 600V 31A POWER MOS 7TM Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel


    Original     		PDF APT6017JLL

    Untitled

    Abstract: No abstract text available
    Text: APT6017JFLL 600V 31A 0.170W POWER MOS 7TM FREDFET • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package


    Original     		PDF APT6017JFLL OT-227

    electrical circuit diagram reverse forward move d

    Abstract: H24 SMD DIODE
    Text: Low Power Loss ORing Diode Module BID Series This is a low power loss ORing diode device that eliminates the need for a Schottky diode. With the voltage detection between terminals of its built-in MOS-FET, it is turned ON for forward voltage and OFF for reverse voltage like a diode.


    Original     		PDF BDD20101213 electrical circuit diagram reverse forward move d H24 SMD DIODE

    H24 SMD DIODE

    Abstract: electrical circuit diagram reverse forward move d 12v bulb 220 supply diagram
    Text: Low Power Loss ORing Diode Module BID Series This is a low power loss ORing diode device that eliminates the need for a Schottky diode. With the voltage detection between terminals of its built-in MOS-FET, it is turned ON for forward voltage and OFF for reverse voltage like a diode.


    Original     		PDF BDD20101213 H24 SMD DIODE electrical circuit diagram reverse forward move d 12v bulb 220 supply diagram

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet 1.0MHz, 3.5A, Synchronous Step Down DC-DC Converter General Description Features The AP3435 is a high efficiency step-down DC-DC voltage converter. The chip operation is optimized by peak-current mode architecture with built-in synchronous power MOS switchers. The oscillator


    Original     		PDF AP3435 AP3435

    mos 8580

    Abstract: 87-3.3
    Text: Voltage Controlled Oscillator Typical Performance Data MOS-868-119+ V TUNE FREQUENCY POWER OUTPUT TUNE SENS MHz/V (MHz) (dBm) 0.00 0.25 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 10.50 11.00 11.50 12.00


    Original     		PDF MOS-868-119+ mos 8580 87-3.3

    Untitled

    Abstract: No abstract text available
    Text: Voltage Controlled Oscillator Typical Performance Data MOS-828-219+ V TUNE FREQUENCY POWER OUTPUT TUNE SENS MHz/V (MHz) (dBm) 0.00 0.25 0.50 0.80 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 3.25 3.50 3.75 4.00 4.25 4.50 4.80 5.00 5.25 5.50 5.75 6.00 6.25


    Original     		PDF MOS-828-219+

    APC UPS es 500 CIRCUIT DIAGRAM

    Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
    Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.


    OCR Scan     		PDF ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212

    Untitled

    Abstract: No abstract text available
    Text: PF0011 b lE ]> p o ia n a T33 • h it i4 HITACHI/ OPTOELECTRONICS HIGH FREQUENCY POWER MOS FET MODULE UHF Band 890-915 MHz ■ FEATURES • Include Input and Output Matching Circuit • Easy to Control Output Power • Superior to Stability at Load Mismatching


    OCR Scan     		PDF PF0011 20sec 0D13bGD

    TEA2262

    Abstract: No abstract text available
    Text: r = 7 SGS-THOMSON liìiflDÈ[S [l[Li gTFK©liì!lD(gi TEA2262 SWITCH MODE POWER SUPPLY CONTROLLER • POSITIVE AND NEGATIVE OUTPUT CUR­ RENT UP TO 1A ■ LOW START-UP CURRENT ■ DIRECT DRIVE OF THE MOS POWER TRANSISTOR ■ TWO LEVELS TRANSISTOR CURRENT LIMI­


    OCR Scan     		PDF TEA2262 TEA2262

    vk200* FERROXCUBE

    Abstract: MRF137 3950K MOTOROLA TRANSISTOR 974
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line 30 W 2 .0 -4 0 0 MHz N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR N-CHANNEL MOS BROADBAND RF POWER . . . designed fo r w ideband large-signal o utp ut and d river stages in the 2.0 to 400 MHz range


    OCR Scan     		PDF MRF137 vk200* FERROXCUBE 3950K MOTOROLA TRANSISTOR 974

    N 821 Diode

    Abstract: transistor IRF 450 821 transistor ON 823 D 823 transistor transistor D 822 irf transistor 822FI SC-0241 tr 821
    Text: rz 7 A 7#. SCS-THOMSON IRF 820/FI-821/FI mnmglliigmiBiMnigi_ IRF 822/FI-823/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS RdS OI1 IRF820 IRF820FI 500 V 500 V 3.0 ß 3.0 ß IRF821 IRF821FI 450 V 450 V 3.0 ß 3.0 n 2.5 A 2.0 A IRF822


    OCR Scan     		PDF IRF820 IRF820FI IRF821 IRF821FI IRF822 IRF822FI IRF823 IRF823FI 820/FI-821/FI 822/FI-823/FI N 821 Diode transistor IRF 450 821 transistor ON 823 D 823 transistor transistor D 822 irf transistor 822FI SC-0241 tr 821

    D 823 transistor

    Abstract: transistor IRF 450 821 transistor transistor D 822 P irf transistors transistor irf 500 transistor D 822 ON 823 823FI irf822f
    Text: rz7 SGS-THOMSON [ÜD g»iIL[l RDD(gi IRF 820/FI-821/FI IRF 822/FI-823/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS IRF820 IRF820FI 500 V 500 V 3.0 3.0 IRF821 IRF821FI 450 V 450 V 3.0 3.0 IRF822 IRF822FI 500 V 500 V 4.0 4.0 IRF823 IRF823FI


    OCR Scan     		PDF 820/FI-821/FI 822/FI-823/FI IRF820 IRF820FI IRF821 IRF821FI IRF822 IRF822FI IRF823 IRF823FI D 823 transistor transistor IRF 450 821 transistor transistor D 822 P irf transistors transistor irf 500 transistor D 822 ON 823 823FI irf822f

    TEA2262

    Abstract: SMPS Transformer Symbol circuit diagram of high power smps SMPS Transformer 12V mos power 823 TEA5170 smps circuit diagrams MASTER-SLAVE SMPS FOR TV hf amplifier for transformer
    Text: ^7M Æ 7 S G S -T H O M S O N ß IL IO T M K i TEA 2262 SWITCH MODE POWER SUPPLY CONTROLLER POSITIVE AND NEGATIVE OUTPUT CUR­ RENT UP TO 1A LOW START-UP CURRENT DIRECT DRIVE OF THE MOS POWER TRANSISTOR TWO LEVELS TRANSISTOR CURRENT LIMI­ TATION DOUBLE PULSE SUPPRESSION


    OCR Scan     		PDF TEA2262 TEA2262 SMPS Transformer Symbol circuit diagram of high power smps SMPS Transformer 12V mos power 823 TEA5170 smps circuit diagrams MASTER-SLAVE SMPS FOR TV hf amplifier for transformer

    svi 2003

    Abstract: 915MH svi 2003 a PF0011 S85M 915m1 885Mhz 915p Hitachi Scans-001
    Text: blE D PF0011 M^baOS 00135cia T33 • H I T M HITACHI/ OPTOELECTRONICS HIGH FREQUENCY POW ER MOS F E T MODULE UHF Band 890-915 MHz ■ FEATURES # Include Input and Output Matching Circuit # Easy to Control Output Power # Superior to Stability at Load Mismatching


    OCR Scan     		PDF 885MF 885MHz 915MH 915MHz 915M1 885MI-/ D013bQD -PF0011 svi 2003 svi 2003 a PF0011 S85M 915p Hitachi Scans-001

    ELM13401CA

    Abstract: ELM13401EA ELM13400CA SOT-26 ci FET MARKING MO sot-23 ELM13401AA E1101 SOT-23 00A ELM13401 marking za mos
    Text: ELM13400XÄ N-Channel Enhancement Mode Power MOS FET • GENERAL DESCRIPTION ELM13400xA Series uses advanced trench technology to provide excellent Riwom, low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM


    OCR Scan     		PDF ELM13400XA ELMI3400xA OT-23, OT-26 28mi2. ELM13400xA OT-23 ELM13401CA ELM13401EA ELM13400CA SOT-26 ci FET MARKING MO sot-23 ELM13401AA E1101 SOT-23 00A ELM13401 marking za mos

    Untitled

    Abstract: No abstract text available
    Text: Æ T S G S -T tfO M S O N RiôD g (Q [l[L[lgïï[S(o)RgD(gi TEA2262 SWITCH MODE POWER SUPPLY CONTROLLER • POSITIVE AND NEGATIVE OUTPUT CUR­ RENT UP TO 1A ■ LOW START-UP CURRENT ■ DIRECT DRIVE OF THE MOS POWER TRANSISTOR ■ TWO LEVELS TRANSISTOR CURRENT LIMI­


    OCR Scan     		PDF TEA2262 DIP16 TEA2262 7T2T237 0D5fiT53

    IC-3190

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ ///PD42S16800,4216800,42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The jiPD42S16800, 4216800, 42S17800, 4217800 are 2,097.152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.


    OCR Scan     		PDF uPD42S16800 uPD4216800 uPD42S17800 uPD4217800 jiPD42S16800, 42S17800, iuPD42Sl6800 42S17800 28-pin IC-3190

    MN3802

    Abstract: mn3811k MN3802A MN3801 MN3830S mn3811 MN3725 mn3810 MN3823S 318MHZ
    Text: MOS LSIs • CCD Delay Line Series 1 Type No. Category N M S Supply voltage (12V) Quasi-single power supply 5V, (9V) c s Low EMI Low clock noise Supply voltage 5V,9V Clock Multiplier Package No. Auto-bias 6.0MHz 400mVp-p built-in 5V 200mW 6V O.OlmW 1H -


    OCR Scan     		PDF 200mW 300mW 150mW 5V220mW 5V30mW 5V55mW MN3104 9V90mW 125mW MN3802 mn3811k MN3802A MN3801 MN3830S mn3811 MN3725 mn3810 MN3823S 318MHZ

    20N06

    Abstract: No abstract text available
    Text: SGS-THOMSON STP20N06 STP20N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP20N 06 STP20N 06FI V dss R DS on Id 60 V 60 V 0 .0 9 £2 0 .0 9 £2 20 A 13 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF STP20N06 STP20N06FI STP20N O-220 ISOWATT220 STP20N06/FI GC20180 20N06