mtm76325
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . MTM76325 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For DC-DC converter circuits For switching circuits • Overview Package MTM76325 is the composite MOS FET (N-channel and P-channel MOS
|
Original
|
2002/95/EC)
MTM76325
MTM76325
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package Overview MTM86727 is the composite MOS FET (N-channel MOS FET and schottky
|
Original
|
2002/95/EC)
MTM86727
MTM86727
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package Overview MTM86727 is the composite MOS FET (N-channel MOS FET and schottky
|
Original
|
2002/95/EC)
MTM86727
MTM86727
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM76720 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package Overview MTM76720 is the composite MOS FET (N-channel MOS FET and schottky
|
Original
|
2002/95/EC)
MTM76720
MTM76720
|
PDF
|
2SK1824
Abstract: C10535E MEI-1202
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1824 N-CHANNEL MOS FET FOR SWITCHING The 2SK1824 is a N-channel vertical type MOS FET that is PACKAGE DIMENSIONS in mm driven at 2.5 V. 0.1 +0.1 –0.05 0.3 ± 0.05 Because this MOS FET can be driven on a low voltage and
|
Original
|
2SK1824
2SK1824
C10535E
MEI-1202
|
PDF
|
2SK1580
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1580 N-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SK1580 is an N -channel vertical type MOS FET which can be PACKAGE DRAWING Unit : mm driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require con-
|
Original
|
2SK1580
2SK1580
|
PDF
|
FET2
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . FG654301 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits • Overview Package FG654301 is N-P channel dual type small signal MOS FET employed small
|
Original
|
2002/95/EC)
FG654301
FG654301
FET2
|
PDF
|
FET2
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . FG654301 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits • Overview Package FG654301 is N-P channel dual type small signal MOS FET employed small
|
Original
|
2002/95/EC)
FG654301
FG654301
FET2
|
PDF
|
G1563
Abstract: D1563 2SK1658 C10535E VP15-00-3 NEC MARKING surface TC236
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1658 N-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SK1658 is an N -channel vertical type MOS FET which can be PACKAGE DRAWING Unit : mm driven by 2.5 V power supply. 2.1 ±0.1 1.25 ±0.1 As the MOS FET is low Gate Leakage Current, it is suitable for appliances
|
Original
|
2SK1658
2SK1658
G1563
D1563
C10535E
VP15-00-3
NEC MARKING surface
TC236
|
PDF
|
2SK3111
Abstract: 2SK3111-S 2SK3111-ZJ MP-25
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3111 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3111 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
|
Original
|
2SK3111
2SK3111
O-262
2SK3111-ZJ
O-220AB
2SK3111-S
O-263
2SK3111-S
2SK3111-ZJ
MP-25
|
PDF
|
2SK3296
Abstract: 2SK3296-S 2SK3296-ZJ MP-25 nec 2sk3296
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3296 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3296 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
|
Original
|
2SK3296
2SK3296
O-220AB
2SK3296-S
O-262
2SK3296-ZJ
O-263
2SK3296-S
2SK3296-ZJ
MP-25
nec 2sk3296
|
PDF
|
2SK3295
Abstract: 2SK3295-S 2SK3295-ZJ MP-25
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3295 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3295 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
|
Original
|
2SK3295
2SK3295
O-220AB
2SK3295-S
O-262
2SK3295-ZJ
O-263
2SK3295-S
2SK3295-ZJ
MP-25
|
PDF
|
C10535E
Abstract: MEI-1202 PA505T marking FA fet transistor
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA505T N-CHANNEL/P-CHANNEL MOS FET 5-PIN 2 CIRCUITS MOS FET circuits. It achieves high-density mounting and saves mounting costs. PACKAGE DIMENSIONS (in millimeters) 0.32 +0.1 –0.05 • Two source common MOS FET circuits in package the
|
Original
|
PA505T
SC-59
PA505T
C10535E
MEI-1202
marking FA
fet transistor
|
PDF
|
nec 2501
Abstract: 2SK3110 nec 2702
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3110 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3110 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
|
Original
|
2SK3110
2SK3110
O-220
O-220
nec 2501
nec 2702
|
PDF
|
|
|
2SK3109
Abstract: 2SK3109-S 2SK3109-ZJ MP-25 1302 diode
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3109 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3109 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
|
Original
|
2SK3109
2SK3109
O-262
2SK3109-ZJ
O-220AB
2SK3109-S
O-263
2SK3109-S
2SK3109-ZJ
MP-25
1302 diode
|
PDF
|
2SK3294
Abstract: 2SK3294-S 2SK3294-ZJ MP-25
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3294 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3294 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
|
Original
|
2SK3294
2SK3294
O-220AB
2SK3294-S
O-262
2SK3294-ZJ
O-263
2SK3294-S
2SK3294-ZJ
MP-25
|
PDF
|
2SK3454
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3454 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3454 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, PART NUMBER
|
Original
|
2SK3454
2SK3454
O-220
O-220
|
PDF
|
2SK3573
Abstract: 2SK3573-S 2SK3573-Z 2SK3573-ZK MP-25 MP-25Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3573 SWITCHING N-CHANNEL POWER MOS FET ★ ORDERING INFORMATION DESCRIPTION The 2SK3573 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics,
|
Original
|
2SK3573
2SK3573
O-220AB
2SK3573-S
O-262
2SK3573-ZK
O-263
2SK3573-Z
O-220SMD
2SK3573-S
2SK3573-Z
2SK3573-ZK
MP-25
MP-25Z
|
PDF
|
2SK3572-Z
Abstract: ISS 99 diode 2SK3572 D1625 2SK3572-S 2SK3572-ZK MP-25 MP-25Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3572 SWITCHING N-CHANNEL POWER MOS FET ★ ORDERING INFORMATION DESCRIPTION The 2SK3572 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics,
|
Original
|
2SK3572
2SK3572
O-220AB
2SK3572-S
O-262
2SK3572-ZK
O-263
2SK3572-Z
O-220SMD
2SK3572-Z
ISS 99 diode
D1625
2SK3572-S
2SK3572-ZK
MP-25
MP-25Z
|
PDF
|
2SK3640
Abstract: 2SK3640-ZK
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3640 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3640 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and PART NUMBER PACKAGE
|
Original
|
2SK3640
2SK3640-ZK
2SK3640
O-252
O-252)
2SK3640-ZK
|
PDF
|
2SK3638
Abstract: 2SK3638-ZK
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3638 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3638 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and PART NUMBER PACKAGE
|
Original
|
2SK3638
2SK3638
2SK3638-ZK
O-252
O-252)
2SK3638-ZK
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3454 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3454 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, PART NUMBER
|
Original
|
2SK3454
2SK3454
O-220
O-220
|
PDF
|
2SK1398
Abstract: No abstract text available
Text: MOS FIELD EFFECT TRANSISTOR 2SK1398 N-CHANNEL MOS FET FOR HIGH SPEED SW ITCHING PACKAGE DIMENSIONS Unit : mm The 2SK1398 is an N-channel vertical type MOS FET which can be driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require con
|
OCR Scan
|
2SK1398
2SK1398
2SJ184.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3109 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3109 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
|
OCR Scan
|
2SK3109
2SK3109
O-220AB
2SK3109-S
O-262
2SK3109-ZJ
O-263
|
PDF
|
