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    MOS GATED THYRISTOR Search Results

    MOS GATED THYRISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    MOS GATED THYRISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    stanag 3456

    Abstract: ac Inverter schematics 10 kw 30KW Inverter Diagram working principle of an inverter convertisseur dc ac 115v 400 hz 120 degree conduction mode of an inverter Pure sinewave inverter circuit diagram commutation techniques of scr principle block diagram 115v 400hz power single phase dual output inverter with three switch legs
    Text: APPLICATION NOTE APT9601 By: Serge Bontemps Phillipe Cussac Henry Foch Denis Grafham HIGH FREQUENCY RESONANT HALF BRIDGE MOS-Gated Power Semiconductors Configured in the ZVT Thyristor-Dual Mode Yield > 95% Converter Efficiency at 1-10 kW, When Resonantly Switched


    Original     		PDF APT9601 stanag 3456 ac Inverter schematics 10 kw 30KW Inverter Diagram working principle of an inverter convertisseur dc ac 115v 400 hz 120 degree conduction mode of an inverter Pure sinewave inverter circuit diagram commutation techniques of scr principle block diagram 115v 400hz power single phase dual output inverter with three switch legs

    ED26 diode

    Abstract: mos Turn-off Thyristor MOS Controlled Thyristor AN8602 ED-26 diode mosfet controlled thyristor MOS-Gated Thyristor ford igbt P channel 600v 20a IGBT MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
    Text: Harris Semiconductor No. AN8602.1 Harris Power MOSFETs May 1992 The IGBTs - A New High Conductance MOS-Gated Device Author: J.P. Russell, A.M. Goodman, L.A. Goodman and J.M. Neilson Abstract ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to


    Original     		PDF AN8602 ED26 diode mos Turn-off Thyristor MOS Controlled Thyristor ED-26 diode mosfet controlled thyristor MOS-Gated Thyristor ford igbt P channel 600v 20a IGBT MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information 1500V MOS Gated Thyristor MMJX1H40N150 VDM = 1500V A A G Electrically Isolated Tab K G K Isolated Tab Symbol Test Conditions VDM TJ VGK VGK ITSM PD Maximum Ratings = 25°C to 150°C 1500 V Continuous Transient ±30 ±40


    Original     		PDF MMJX1H40N150 50/60Hz, 40N150

    applications of mos controlled thyristor

    Abstract: MOS Controlled Thyristor Semiconductor Power AN-7504 mosfet controlled thyristor mos Turn-off Thyristor P channel 600v 20a IGBT ED26 diode Pelly 10A fast Gate Turn-off Thyristor transistor Ia 15 rca
    Text: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract Title N86 bt he BTs w gh ncce OSted vice utho eyrds terrpoon, minctor, er OCI O frk geode May 1992 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to


    Original     		PDF

    ED26 diode

    Abstract: 8602 RECTIFIER AN8602 mos Turn-off Thyristor 8602 RECTIFIER 4 PIN P channel 600v 20a IGBT Pelly P channel 600v 30a IGBT applications of mos controlled thyristor INTERSIL 1981
    Text: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract May 1992 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to that of an n-channel power MOSFET but employs an n-epitaxial layer grown on a p+ substrate. In operation, the


    Original     		PDF AN8602 ED26 diode 8602 RECTIFIER mos Turn-off Thyristor 8602 RECTIFIER 4 PIN P channel 600v 20a IGBT Pelly P channel 600v 30a IGBT applications of mos controlled thyristor INTERSIL 1981

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information 1500V MOS Gated Thyristor MMIX1H60N150V1 VDM A w/ Anti-Parallel Diode A G Electrically Isolated Tab G K K Isolated Tab Symbol Test Conditions VDM TJ 1500 V VGK VGK Continuous Transient ±30 ±40 V V ITSM TC TC = 25°C, 1 s


    Original     		PDF MMIX1H60N150V1 50/60Hz, 60N150V1

    MOS Controlled Thyristor

    Abstract: GTO thyristor 5A, 400V ED-26 diode Pelly AN75 AN-7504 MOS-Gated Transistors MOS-Gated Thyristor ED26 diode
    Text: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract /Title AN75 4 Subect The GBTs A ew i h onucance OSated evice Autho ) Keyords Fairhild orpoation, emionuctor, Cretor () DOCI FO dfark Page- May 1992 AN-7504 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to


    Original     		PDF AN-7504 MOS Controlled Thyristor GTO thyristor 5A, 400V ED-26 diode Pelly AN75 AN-7504 MOS-Gated Transistors MOS-Gated Thyristor ED26 diode

    DT94-15

    Abstract: ir21xx SCR gate drive circuit 3 phase IGBT inverter design by ir2130 HEXFEt Power MOSFET Design Guide 3 phase dc control ir2130 HV Floating MOS-Gate Driver circuits GBAN-PVI-1 DT-93-4 AN-948
    Text: App. Notes Design Tips Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Revised Application Notes and Design Tips INT-936 Title (and topic, if necessary) Document# Pages Date The Do's and Don'ts of Using MOS-Gated Transistors


    Original     		PDF INT-936 AN-936) INT-937 Jun-96 Oct-98 DT94-15 ir21xx SCR gate drive circuit 3 phase IGBT inverter design by ir2130 HEXFEt Power MOSFET Design Guide 3 phase dc control ir2130 HV Floating MOS-Gate Driver circuits GBAN-PVI-1 DT-93-4 AN-948

    SCR gate drive circuit

    Abstract: DT94-15 variable frequency drive circuit diagram dc-Motor controller 500w 600V igbt dc to dc buck converter IR2130 with ac voltage controller Drive circuit for IGBT using IR2130 dt94-9 SCR Gate Drive for ac to dc converter GBAN-PVI-1
    Text: App. Notes Design Tips Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Revised Application Notes and Design Tips INT-936 Title (and topic, if necessary) Document# Pages Date The Do's and Don'ts of Using MOS-Gated Transistors


    Original     		PDF INT-936 May-97 Jun-97 AN-936) Jun-96 SCR gate drive circuit DT94-15 variable frequency drive circuit diagram dc-Motor controller 500w 600V igbt dc to dc buck converter IR2130 with ac voltage controller Drive circuit for IGBT using IR2130 dt94-9 SCR Gate Drive for ac to dc converter GBAN-PVI-1

    ON Semiconductor marking

    Abstract: motorola ZENER diode marking code motorola transistor dpak marking motorola diode marking code On semiconductor date Code dpak YEAR A on semiconductor marking code dpack MARKING ON Semiconductor to220 transistor marking MOTOROLA sot-223 MARKING ON SEMI MOTOROLA DATE CODE transistor
    Text: 504 BRD8008/D Rev. 0, Mar-2000 ON Semiconductor Part Marking Transition Brochure ON Semiconductor ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does


    Original     		PDF BRD8008/D Mar-2000 r14525 ON Semiconductor marking motorola ZENER diode marking code motorola transistor dpak marking motorola diode marking code On semiconductor date Code dpak YEAR A on semiconductor marking code dpack MARKING ON Semiconductor to220 transistor marking MOTOROLA sot-223 MARKING ON SEMI MOTOROLA DATE CODE transistor

    MOS-Controlled Thyristor

    Abstract: SMCTAA32N14A10 mos 1200v to-247 800v nmos MOS Controlled Thyristor MOS-Controlled Thyristor N-type 103-290 Solidtron RG-47 MOS-Controlled Thyristor to-247
    Text: SMCTAA32N14A10 Advanced Pulse Power Device 275 Great Valley Parkway Malvern, PA 19355 Ph: 610-407-4700 N-MOS VCS, TO-247 Data Sheet Rev 0 - 12/19/07 Description Package Size - 4 This voltage controlled SolidtronTM (VCS) discharge switch utilizes an n-type MOS-Controlled Thyristor mounted in a five


    Original     		PDF SMCTAA32N14A10 O-247 O-247 04242009-NB-0010 MOS-Controlled Thyristor SMCTAA32N14A10 mos 1200v to-247 800v nmos MOS Controlled Thyristor MOS-Controlled Thyristor N-type 103-290 Solidtron RG-47 MOS-Controlled Thyristor to-247

    MOS-Controlled Thyristor

    Abstract: SMCTAA65N14A10 Solidtron MOS Controlled Thyristor MOS-Controlled Thyristor N-type
    Text: SMCTAA65N14A10 SolidtronTM 275 Great Valley Parkway Malvern, PA 19355 Ph: 610-407-4700 N-MOS VCS, TO-247 Data Sheet Rev 0 - 02/15/08 Description Package Size - 6 This Voltage Controlled SolidtronTM (VCS) discharge switch utilizes an n-type MOS-Controlled Thyristor mounted in a five


    Original     		PDF SMCTAA65N14A10 O-247 O-247 260oC 04242009-NB-0012 MOS-Controlled Thyristor SMCTAA65N14A10 Solidtron MOS Controlled Thyristor MOS-Controlled Thyristor N-type

    AA32N14A10

    Abstract: MOS-Controlled Thyristor Solidtron aa32n14 RG47 SMCTAA32N14A10 RG-47 SCR 3KA 02uF edis
    Text: SMCT AA32N14A10 Advanced Pulse Power Device N-MOS VCS, TO-247 Description Package This voltage controlled Solidtron VCS discharge switch utilizes an n-type MOS-Controlled Thyristor mounted in a five leaded TO247 plastic package. The VCS features the high peak current capability and low Onstate voltage drop common to SCR thyristors combined with


    Original     		PDF AA32N14A10 O-247 O-247 FO-247 AA32N14A10 MOS-Controlled Thyristor Solidtron aa32n14 RG47 SMCTAA32N14A10 RG-47 SCR 3KA 02uF edis

    TA32N14A10

    Abstract: MOS-Controlled Thyristor MCT thyristor 63SN 37PB SOLDER TA32N14 ta32n14a KA NMOS 1400V MCT 302oC Solidtron
    Text: SMCT TA32N14A10 Advanced Pulse Power Device N-MOS VCS, ThinPakTM Description Package This voltage controlled Solidtron VCS discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a ThinPakTM, ceramic "chip-scale" hybrid. Gate Return Bond Area


    Original     		PDF TA32N14A10 63pb/37sn 260oC TA32N14A10 MOS-Controlled Thyristor MCT thyristor 63SN 37PB SOLDER TA32N14 ta32n14a KA NMOS 1400V MCT 302oC Solidtron

    MOS-Controlled Thyristor

    Abstract: SMCTTA65N14A10 MCT thyristor SMCTAA65N14A10 63SN 37PB SOLDER SMCTTA65N
    Text: SMCTTA65N14A10 SolidtronTM 275 Great Valley Parkway Malvern, PA 19355 Ph: 610-407-4700 N-MOS VCS, ThinPak Data Sheet Rev 0 - 02/15/08 Description Package Size - 6 SolidtronTM This voltage controlled (VCS) discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a


    Original     		PDF SMCTTA65N14A10 63pb/37sn 260oC SMCTAA65N14A10 04242009-NB-0011 MOS-Controlled Thyristor SMCTTA65N14A10 MCT thyristor SMCTAA65N14A10 63SN 37PB SOLDER SMCTTA65N

    SMCTTA32N14A10

    Abstract: TA32N14A10
    Text: SMCT TA20N20A10 Advanced Pulse Power Device N-MOS VCS, ThinPakTM Preliminary Data Sheet Description Package This voltage controlled Solidtron VCS discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a ThinPakTM, ceramic "chip-scale" hybrid.


    Original     		PDF TA20N20A10 63pb/37sn SMCTTA32N14A10 TA32N14A10

    SMCTTA32N14A10

    Abstract: MOS-Controlled Thyristor MCT thyristor MOS Controlled Thyristor
    Text: SMCTTA32N14A10 SolidtronTM 275 Great Valley Parkway Malvern, PA 19355 Ph: 610-407-4700 www.siliconpower.com N-MOS VCS, ThinPakTM Data Sheet Rev 2 - 07/10/2008 Description Package This voltage controlled SolidtronTM (VCS) discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a


    Original     		PDF SMCTTA32N14A10 260oC SMCTTA32N14A 04242009-NB-0007 SMCTTA32N14A10 MOS-Controlled Thyristor MCT thyristor MOS Controlled Thyristor

    TA65N14A10

    Abstract: 1E21 MCT thyristor SMCTTA65N14A10 RG-47
    Text: SMCT TA65N14A10 Advanced Pulse Power Device N-MOS VCS, ThinPakTM Description Package This voltage controlled Solidtron VCS discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a ThinPakTM, ceramic "chip-scale" hybrid. Gate Return Bond Area


    Original     		PDF TA65N14A10 63pb/37sn 260oC TA65N14A10 1E21 MCT thyristor SMCTTA65N14A10 RG-47

    TA32N14A10

    Abstract: SCR 3KA 37sn TA32N14 MOS Controlled Thyristor RG-47
    Text: SMCT TA32N14A10 Advanced Pulse Power Device N-MOS VCS, ThinPakTM Description Package This voltage controlled Solidtron VCS discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a ThinPakTM, ceramic "chip-scale" hybrid. Gate Return Bond Area


    Original     		PDF TA32N14A10 63pb/37sn 260oC TA32N14A10 SCR 3KA 37sn TA32N14 MOS Controlled Thyristor RG-47

    Mitsubishi IPM module

    Abstract: igbt module testing IGBT 1500 mitsubishi semiconductors power modules mos trench power igbt IGBT cross MITSUBISHI IGBT 100A mitsubishi electric igbt module ac igbt Mitsubishi Electric IGBT MODULES
    Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS FEATURED PRODUCTS TECHNOLOGY AND TREND Featured Products Technology and Trend The IGBT and IPM products in this data book feature the 3rd Generation H-Series IGBT chip and a new generation free-wheel diode. A brief description of this technology


    Original     		PDF

    NCP1204

    Abstract: bipolar power transistor data NCP4000 SO32W NCP1450 dual zener common anode NCP801 DC-DC Step-Up Converter for White LED TSOP RECEIVER MOSFET P-CH 250V 5A
    Text: Rev. 9, 2Q02 SGD503/D POWER MANAGEMENT SOLUTIONS ANALOG PRODUCTS DC/DC: Multiphase Controllers Device CS5323 NCP5332A POWER MANAGEMENT SOLUTIONS ANALOG cont. Gate Drive External On-chip Compliance VRM 9.0 VRM 9.0 Package SO-20W SO-28W Availability NOW May-02


    Original     		PDF SGD503/D CS5323 NCP5332A SO-20W SO-28W May-02 NCP1203 NCP1204 NCP1205 NCP1209 NCP1204 bipolar power transistor data NCP4000 SO32W NCP1450 dual zener common anode NCP801 DC-DC Step-Up Converter for White LED TSOP RECEIVER MOSFET P-CH 250V 5A

    MOS-Controlled Thyristor

    Abstract: SMCTAC05N14A10 MOS Controlled Thyristor scr 50kA MOS-Controlled Thyristor N-type Solidtron 04242009-NB-0004 SMCTAC
    Text: SMCTAC05N14A10 SolidtronTM 275 Great Valley Parkway Malvern, PA 19355 Ph: 610-407-4700 fax: 610-407-3688 N-MOS VCS, Bare-Die Data Sheet Rev 1 - 03/30/09 Description Size - 2 Gate return Gate Bond Area This voltage controlled SolidtronTM (VCS) discharge switch


    Original     		PDF SMCTAC05N14A10 260oC 04242009-NB-0004 MOS-Controlled Thyristor SMCTAC05N14A10 MOS Controlled Thyristor scr 50kA MOS-Controlled Thyristor N-type Solidtron SMCTAC

    VCSFF05N14

    Abstract: SM 226 6V 120ka Solidtron 05N14 J-STD-033 KA NMOS Fairchild 958
    Text: VCS FF 05N14 A10 SolidtronTM 275 Great Valley Parkway Malvern, PA 19355 Ph: 610-407-4700 fax: 610-407-3688 N-MOS VCS, F-Pak Data Sheet Rev 4 Description Size - 2 The Voltage Controlled SolidtronTM (VCS) features high peak current capability and a low on-state voltage drop common to


    Original     		PDF 05N14 04242009-NB-0005 VCSFF05N14 SM 226 6V 120ka Solidtron J-STD-033 KA NMOS Fairchild 958

    ic 4048

    Abstract: MOS Controlled Thyristor
    Text: Advanced Technical Information IGBT Single Switch VIO 1000-03 G4 ULTRA Low VCEsat IC25 = 1100A = 300 V VCES VCE sat typ. = 1.3 V G E' E C T1 T2 C T1 G E' E T2 IGBT Symbol Conditions VCES TJ = 25°C to 150°C 300 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF B25/100 ic 4048 MOS Controlled Thyristor