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    MOS FET UHF LOW POWER Search Results

    MOS FET UHF LOW POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    MOS FET UHF LOW POWER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3SK196

    Abstract: mos fet uhf low power NF 028
    Text: 3SK196 Silicon N Channel Dual Gate MOS FET VHF/UHF TV Tuner RF Amplifier Features MPAK-4 • Compact package. • Low noise amplifier for VHF to UHF band, capable of RF amplifier for CATV wide band tuner. 2 Table 1 Absolute Maximum Ratings Ta = 25°C Item


    Original     		PDF 3SK196 3SK196 mos fet uhf low power NF 028

    PF0348

    Abstract: PF0349 PF0350 PF0351 PF0352 PF0353 Hitachi DSA0046
    Text: PF0348 Series MOS FET Power Amplifier Module for UHF Band ADE-208-343C Z 4th. Edition December, 1996 Features • Small package:30 x 10 × 5.9mm • Low operation voltage: 7W at 7.2V • Low power control current: 200µA Typ Ordering Infomation Type. name


    Original     		PDF PF0348 ADE-208-343C PF0348 360MHz PF0349 430MHz PF0350 470MHz PF0351 490MHz PF0349 PF0350 PF0351 PF0352 PF0353 Hitachi DSA0046

    Load VSWR tolerance

    Abstract: PF0350 PF0348 PF0349 PF0351 PF0352 PF0353 ADE-208-343C 68w fet Hitachi DSA00304
    Text: PF0348 Series MOS FET Power Amplifier Module for UHF Band ADE-208-343C Z 3rd. Edition December, 1996 Features • Small package:30 x 10 × 5.9mm • Low operation voltage: 7W at 7.2V • Low power control current: 200µA Typ Ordering Infomation Type. name


    Original     		PDF PF0348 ADE-208-343C PF0348 360MHz PF0349 430MHz PF0350 470MHz PF0351 490MHz Load VSWR tolerance PF0350 PF0349 PF0351 PF0352 PF0353 ADE-208-343C 68w fet Hitachi DSA00304

    PF0350

    Abstract: Hitachi DSA0096 PF0348 PF0349 PF0351 PF0352 PF0353
    Text: PF0348 Series MOS FET Power Amplifier Module for UHF Band ADE-208-343C Z 4th Edition December 1996 Features • Small package: 30 x 10 × 5.9 mm • Low operation voltage: 7 W at 7.2 V • Low power control current: 200 µA Typ Ordering Information Type Name


    Original     		PDF PF0348 ADE-208-343C PF0348 PF0349 PF0350 PF0351 PF0352 PF0353 D-85622 PF0350 Hitachi DSA0096 PF0349 PF0351 PF0352 PF0353

    Hitachi DSA002759

    Abstract: No abstract text available
    Text: 3SK297 Silicon N-Channel Dual Gate MOS FET ADE-208-389 1st. Edition Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline 3SK297 Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 3SK297 ADE-208-389 Hitachi DSA002759

    Hitachi DSA002759

    Abstract: No abstract text available
    Text: 3SK298 Silicon N-Channel Dual Gate MOS FET ADE-208-390 1st. Edition Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline 3SK298 Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 3SK298 ADE-208-390 Hitachi DSA002759

    3SK318

    Abstract: DSA003643
    Text: 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-600 Z 1st. Edition Feb. 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V


    Original     		PDF 3SK318 ADE-208-600 3SK318 DSA003643

    3SK319

    Abstract: Hitachi DSA002759
    Text: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602 Z 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V


    Original     		PDF 3SK319 ADE-208-602 3SK319 Hitachi DSA002759

    marking is "yb-"

    Abstract: Hitachi DSA002759
    Text: 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-600 Z 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V


    Original     		PDF 3SK318 ADE-208-600 marking is "yb-" Hitachi DSA002759

    dual-gate YB

    Abstract: 3SK318 SC-82AB Hitachi DSA00336
    Text: 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-600 Z 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V


    Original     		PDF 3SK318 ADE-208-600 dual-gate YB 3SK318 SC-82AB Hitachi DSA00336

    3SK319

    Abstract: ADE-208-602 DSA003643
    Text: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602 Z 1st. Edition Feb. 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V


    Original     		PDF 3SK319 ADE-208-602 3SK319 ADE-208-602 DSA003643

    3SK319

    Abstract: ADE-208-602 Hitachi DSA00395
    Text: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602 Z 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V


    Original     		PDF 3SK319 ADE-208-602 3SK319 Hitachi DSA00395

    PF0340A

    Abstract: BL01RN1-A62 MURATA MW 20 PF0341A PF0342A PF0343A PF0344A PF0345A Hitachi DSA00221 Hitachi DSA00221025
    Text: PF0341A Series MOS FET Power Amplifier Module for UHF Band ADE-208-338C Z 4th. Edition July 1996 Features • Small package: 30 x 10 × 5.9 mm • High output power at low voltage: 2 W Typ at 4.8 V • Low power control current: 200 µA Typ Ordering Information


    Original     		PDF PF0341A ADE-208-338C PF0341A PF0342A PF0343A PF0344A PF0345A PF0340A BL01RN1-A62 MURATA MW 20 PF0342A PF0343A PF0344A PF0345A Hitachi DSA00221 Hitachi DSA00221025

    3SK143

    Abstract: No abstract text available
    Text: High Frequency FETs 3SK143 Silicon N-Channel 4-pin MOS FET For UHF high-gain and low-noise amplification unit: mm +0.2 2.8 –0.3 • Features +0.2 0.65±0.15 ● Low noise-figure NF ● Large power gain PG ● Mini-type package, allowing downsizing of the sets and automatic


    Original     		PDF 3SK143 800MHz 3SK143

    PF0340A

    Abstract: PF0341A PF0342A BL01RN1-A62 PF0343A PF0344A PF0345A Hitachi DSA00311
    Text: PF0341A Series MOS FET Power Amplifier Module for UHF Band ADE-208-338C Z 4th. Edition July 1996 Features • Small package: 30 x 10 × 5.9 mm • High output power at low voltage: 2 W Typ at 4.8 V • Low power control current: 200 µA Typ Ordering Information


    Original     		PDF PF0341A ADE-208-338C PF0341A PF0342A PF0343A PF0344A PF0345A PF0340A PF0342A BL01RN1-A62 PF0343A PF0344A PF0345A Hitachi DSA00311

    3SK296ZQ-TL-E

    Abstract: 3SK296 3sk296zq SC82A
    Text: 3SK296 Silicon N-Channel Dual Gate MOS FET REJ03G0815-0300 Previous ADE-208-388A Rev.3.00 Aug.10.2005 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Outline RENESAS Package code: PTSP0004ZA-A


    Original     		PDF 3SK296 REJ03G0815-0300 ADE-208-388A) PTSP0004ZA-A 3SK296ZQ-TL-E 3SK296 3sk296zq SC82A

    Hitachi DSA002759

    Abstract: No abstract text available
    Text: 3SK317 Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-778 Z 1st. Edition Mar. 1999 Features • Low noise characteristics; (NF = 1.0 dB typ. at f = 200 MHz) • High power gain characteristics ; (PG = 27.6 dB typ. at f = 200 MHz) Outline


    Original     		PDF 3SK317 ADE-208-778 Hitachi DSA002759

    Hitachi DSA002759

    Abstract: No abstract text available
    Text: 3SK295 Silicon N-Channel Dual Gate MOS FET ADE-208-387 1st. Edition Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation Outline 3SK295 Absolute Maximum Ratings Ta = 25°C Item Symbol


    Original     		PDF 3SK295 ADE-208-387 Hitachi DSA002759

    Untitled

    Abstract: No abstract text available
    Text: HITACHI PF0348 Series MOS FET Power Amplifier Module for UHF Band HITACHI ADE-208-343C Z 3rd. Edition December, 1996 Features • Small package: 30 x 10 x 5.9mm • Low operation voltage: 7W at 7.2V


    OCR Scan     		PDF PF0348 ADE-208-343C 200jiA PF0349 PF0350 PF0351 PF0352 PF0353 360MHz

    3SK196

    Abstract: Marking G1s
    Text: H ITACH I 3SK196-Silicon N Channel Dual Gate MOS FET VHF/UHF TV Tuner RF Amplifier Features MPAK-4 • Compact package. • Low noise amplifier for VHF to UHF band, capable of RF amplifier for CATV wide band tuner. 2 Table 1 Absolute Maximum Ratings


    OCR Scan     		PDF 3SK196----------Silicon 3SK196 3SK196 Marking G1s

    Untitled

    Abstract: No abstract text available
    Text: PF0341A Series MOS FET Power Amplifier Module for UHF Band HITACHI Features • Small package: 30 x 10 x 5.9 mm • High output power at low voltage: 2 W Typ at 4.8 V • Low power control current: 200 ¡lA Typ Ordering Information Type Name Operating Frequency


    OCR Scan     		PDF PF0341A PF0341A PF0342A PF0343A PF0344A PF0345A ADE-208-338C

    Untitled

    Abstract: No abstract text available
    Text: PF0348 Series MOS FET Power Amplifier Module for UHF Band HITACHI ADE-208-343C Z 4th Edition December 1996 Features • Small package: 30 x 10 x 5.9 mm • Low operation voltage: 7 W at 7.2 V • Low power control current: 200 ¡lA Typ Ordering Information


    OCR Scan     		PDF PF0348 ADE-208-343C PF0348 PF0349 PF0350 PF0351 PF0352 PF0353

    3SK235

    Abstract: No abstract text available
    Text: HITACHI 3SK235-Silicon N Channel Dual Gate MOS FET UHF/VHF TV Tuner RF Amplifier Features MPAK-4 • Low voltage operation. • High gain, low noise. Table 1 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Drain to source voltage VDS


    OCR Scan     		PDF 3SK235------------Silicon 3SK235 3SK235

    bl01rn1-a62-001

    Abstract: BL01RN1-A62
    Text: HITACHI PF0341A Series MOS FET Power Amplifier Module for UHF Band HITACHI ADE-208-338C Z 4th. Edition July 1996 Features • Small package: 30 x 10 x 5.9 mm • High output power at low voltage: 2 W Typ at 4.8 V • Low power control current: 200 |iA Typ


    OCR Scan     		PDF PF0341A ADE-208-338C PF0342A PF0343A PF0344A PF0345A BL01RN1-A62-001 bl01rn1-a62-001 BL01RN1-A62