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    MOS FET MODULE SILICON Search Results

    MOS FET MODULE SILICON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG250YD2YMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 2200 V, 250 A, 2-153A1A Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOS FET MODULE SILICON Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Low Capacitance MOS FET

    Abstract: Hitachi DSA00103 DIODE DATABOOK PM5050J dr 25 diode
    Text: PM5050J Silicon N-Channel Power MOS FET Module { INCLUDEPICTURE "RG External:F-Drive PC shared :hitachi.eps" \* MERGEFORMAT } November 1996 Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance


    Original     		PDF PM5050J 093/PM5050J Low Capacitance MOS FET Hitachi DSA00103 DIODE DATABOOK PM5050J dr 25 diode

    PM45302F

    Abstract: Hitachi DSA00309
    Text: PM45302F Silicon N-Channel MOS FET Module Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain


    Original     		PDF PM45302F PM45302F Hitachi DSA00309

    PM50100K

    Abstract: Hitachi DSA00311
    Text: PM50100K Silicon N-Channel Power MOS FET Module Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain


    Original     		PDF PM50100K PM50100K Hitachi DSA00311

    PM45302F

    Abstract: Hitachi DSA001652
    Text: PM45302F Silicon N-Channel MOS FET Module November 1996 Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain


    Original     		PDF PM45302F D-85622 PM45302F Hitachi DSA001652

    PM50502C

    Abstract: Hitachi DSA00309
    Text: PM50502C Silicon N-Channel Power MOS FET Module Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain


    Original     		PDF PM50502C PM50502C Hitachi DSA00309

    PM5075J

    Abstract: Hitachi DSA00311
    Text: PM5075J Silicon N-Channel Power MOS FET Module Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain


    Original     		PDF PM5075J PM5075J Hitachi DSA00311

    Hitachi DSA00263

    Abstract: PM4575J PM5075J
    Text: PM4575J Silicon N-Channel Power MOS FET Module Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain


    Original     		PDF PM4575J termi2000 D-85622 Hitachi DSA00263 PM4575J PM5075J

    4600 fet

    Abstract: PM50150K Hitachi DSA00311
    Text: PM50150K Silicon N-Channel Power MOS FET Module Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain


    Original     		PDF PM50150K 4600 fet PM50150K Hitachi DSA00311

    Untitled

    Abstract: No abstract text available
    Text: 2MI50F-050 F U JI POWER M O S -FET B11 . NCHANNEL SILICON POWER MOS-FET ^ „ _ - ^ ^ _ —- MOS-FET MODULE • Features ■Outline Drawings • l ow on-resistance • High current 7? • hsulated to elements and metal base • Separated two-elements


    OCR Scan     		PDF 2MI50F-050

    Diode L2N

    Abstract: 2MI50F-050 ti2k 1x100
    Text: 2MI50F-050 FU JI POWER M OS-FET N-CHANNEL SILICON POWER MOS-FET MOS-FET MODULE • Features lOutline Drawings • l ow on-resistance • High current • hsulated to elements and metal base • Separated two-elements • hclude fast recovery diode 2-458 ■ Applications


    OCR Scan     		PDF 2MI50F-050 Diode L2N 2MI50F-050 ti2k 1x100

    Untitled

    Abstract: No abstract text available
    Text: • 44^205 ODlBbbS PM 5<V 75N -HITACHI/ OPTOELECTRONICS 47fl ■ HIT4 Preliminary LIE D SILICON N-CHANNEL POWER MOS FET MODULE HIGH SPEED POWER SWITCHING ■ FEATURES • Equipped with Power MOS FET • Low On-Resistance • High Speed Switching


    OCR Scan     		PDF

    MP6101

    Abstract: n channel fet array
    Text: MP6101 POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE 7T-MOS FET 6 IN 1 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS MOTOR DRIVE APPLICATIONS. •Pack a g e w i t h Heat Sink Isolated Lead. . H i g h D rain P o wer Dissipation. : P T =120W


    OCR Scan     		PDF MP6101 300yA Ta-25 Drain940 100/i MP6101 n channel fet array

    diode 2JC

    Abstract: 4S125
    Text: fcilE T> m 4ltclhEDS DD13t>53 75b « H i m PM4550N- Preliminary HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL POWER MOS FET MODULE HIGH SPEED POWER SWITCHING • FEATURES • Equipped with Power MOS FET • Low On-Resistance • High Speed Switching


    OCR Scan     		PDF DD13t PM4550N---------------HITACHI/ diode 2JC 4S125

    4575N

    Abstract: No abstract text available
    Text: blE D • H4Tb205 DD13t,S7 3T1 ■ H I T l4 PM4575N Preliminary HITACHI/ OPTO ELECTRON ICS SILICON N-CHANNEL POWER MOS FET MODULE HIGH SPEED POWER SWITCHING ■ FEATURES • Equipped with Power MOS FET • Low On-Resistance • High Speed Switching •


    OCR Scan     		PDF H4Tb205 DD13t PM4575N 4575N

    Untitled

    Abstract: No abstract text available
    Text: PM50302F Silicon N-Channel Power MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain


    OCR Scan     		PDF PM50302F D-85622

    Untitled

    Abstract: No abstract text available
    Text: PM50100K Silicon N-Channel Power MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain


    OCR Scan     		PDF PM50100K D-85622

    Untitled

    Abstract: No abstract text available
    Text: PM5050J Silicon N-Channel Power MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain


    OCR Scan     		PDF PM5050J D-85622

    Untitled

    Abstract: No abstract text available
    Text: PM4575J Silicon N-Channel Power MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain


    OCR Scan     		PDF PM4575J 110in

    Untitled

    Abstract: No abstract text available
    Text: PM45302F Silicon N-Channel MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain


    OCR Scan     		PDF PM45302F D-85622

    Untitled

    Abstract: No abstract text available
    Text: PM45100K Silicon N-Channel Power MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain


    OCR Scan     		PDF PM45100K D-85622

    Untitled

    Abstract: No abstract text available
    Text: PM4550J Silicon N-Channel Power MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain


    OCR Scan     		PDF PM4550J D-85622

    Untitled

    Abstract: No abstract text available
    Text: PM5075J Silicon N-Channel Power MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain


    OCR Scan     		PDF PM5075J D-85622

    Untitled

    Abstract: No abstract text available
    Text: PM50150K Silicon N-Channel Power MOS FET Module HITACHI Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain


    OCR Scan     		PDF PM50150K

    Untitled

    Abstract: No abstract text available
    Text: PM5075J Silicon N-Channel Power MOS FET Module HITACHI Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain


    OCR Scan     		PDF PM5075J