MOS FET 086N10P Search Results

MOS FET 086N10P Result Highlights (5)

Part	Manufacturer	Description
TCK424G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK425G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK423G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK422G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET

MOS FET 086N10P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
086N10P Abstract: KU086N10P Mos fet 086N10P Text: SEMICONDUCTOR KU086N10P/F TECHNICAL DATA N-ch Trench MOS FET General Description KU086N10P A This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter,	Original	KU086N10P/F KU086N10P Fig16. Fig17. Fig18. 086N10P KU086N10P Mos fet 086N10P	PDF

Catalog Datasheet

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086N10P

Abstract: KU086N10P Mos fet 086N10P
Text: SEMICONDUCTOR KU086N10P/F TECHNICAL DATA N-ch Trench MOS FET General Description KU086N10P A This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter,

Original

KU086N10P/F KU086N10P Fig16. Fig17. Fig18. 086N10P KU086N10P Mos fet 086N10P

PDF