P-Channel IGBT
Abstract: No abstract text available
Text: Novel SiC MOS-Bipolar Switches for >10 kV Applications Ranbir Singh GeneSiC Semiconductor Inc. 25050 Riding Plaza, Suite 130-801, South Riding, VA 20152 571-265-7535 ph , 703-373-6918 (fax), ranbir@ieee.org (email). MOS-based gate control is considered a necessity for the applicability of a switch to
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MRF9742
Abstract: MOTOROLA MASTER SELECTION GUIDE RF MHW591 MHW704 mhw593 MHW707-2 MHW592 MRF947T1 equivalent MHW707-1 MRF9282T1
Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar
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MHW1184L
MHW1224L
MHW1254L
MHW1304L
MRF9742
MOTOROLA MASTER SELECTION GUIDE RF
MHW591
MHW704
mhw593
MHW707-2
MHW592
MRF947T1 equivalent
MHW707-1
MRF9282T1
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J FET RF Cascode Input
Abstract: sd2200 SD2200 SEMICONDUCTOR SD2200DE topaz
Text: TOPAZ SEMICONDUCTOR DSE D g ^0fl522b □ □□1,050 1 | ' T - yi-zf SD22ÛQ SEMICONDUCTOR_ N-CHANNEL DEPLETION-MODE D-MOS FET ORDERING INFORMATION TO-206AF TO-72 Hermetic Package SD2200DE SD2200DE/R with Shorting Ring on leads 20Vt 750
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SD2200
D-EV30S
O-206AF
SD2200DE
SD2200DE/R
J FET RF Cascode Input
sd2200
SD2200 SEMICONDUCTOR
SD2200DE
topaz
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MHW707-2
Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar
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714U/1
MHLW8000
MHW707-2
MHW707-1
MRF947T1 equivalent
mhw704
CR2428
MHW591
MHW592
MHW593
MHW707
MRF861
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Untitled
Abstract: No abstract text available
Text: ff - fo - ^ TMF120, TMF122, Universal Semiconductor TMF121 TMF123 M onolithic D ual N -C hannel Enhancem ent-M ode L ateral D-MOS FETs Ordering Inform ation Differential Gate-Source Voltage Differential Drift TO-99 Hermetic Package TO-99 Package with Shorting Ring
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TMF120,
TMF122,
TMF121
TMF123
25/iV/Â
25nVnC
25/1V/Â
TMF120HD
TMF121HD
TMF122HD
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LM714
Abstract: LM714 dual package CA3193AE ic 741 operational amplifier subtracter CA3193 3193A differential pair cascode darlington CA3193 CA3193A CA3193E
Text: tle 3193, 3193A bject MHz, MOS cision rational plifiers) thor ) ywords rris miconor, sin- rational lifier, cost op , low ut bias ent, preon, ustrial mercial pera, unity stable, age back Semiconductor January 1998 Features CA3193, CA3193A CT UCT ODU E PROD 7
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CA3193,
CA3193A
442Precision
CA3193
CA3193A
CA3193
LM714
LM714 dual package
CA3193AE
ic 741 operational amplifier
subtracter CA3193
3193A
differential pair cascode darlington
CA3193E
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TRIAC RCA ca3058
Abstract: rca ca3240E CA311G CA101AT CA124G sn76013 CA1310 CA555CG Fuji Electric tv schematic diagram 40468A
Text: RCA Linear Integrated Circuits This DATABOOK contains complete technical information on the full line of RCA standard commercial linear in tegrated circuits and MOS field-effect transistors for both industrial and con sumer applications. An Index to Devices provides a complete listing of
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PA119CE
Abstract: No abstract text available
Text: PA119CE • PA119CEA PA119CE • PA119CEA PA119CE, PA119CEA Video Power Operational Amplifier FEATURES • VERY FAST SLEW RATE — 900 V/µs • POWER MOS TECHNOLOGY — 4A peak rating • LOW INTERNAL LOSSES — 0.75V at 2A • PROTECTED OUTPUT STAGE — Thermal Shutoff
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PA119CE
PA119CEA
PA119CE,
PA119
PA119U
PA119CE
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CMOS differential amplifier cascode
Abstract: folded cascode op amp open loop gain high end amplifier schematics folded cascode second stage folded cascode current mirror op amp folded cascode rail to rail op amp AN13310 class A push pull power amplifier EL5157 Q7-Q10
Text: Avoiding Instability in Rail-to-Rail CMOS Amplifiers Application Note January 2, 2008 AN1331.0 FIGURE 1. VOLTAGE FEEDBACK AMPLIFIER Introduction Voltage Feedback Amplifier The minimum feature size of the MOS transistor has been greatly reduced since its invention just a few decades ago.
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AN1331
CMOS differential amplifier cascode
folded cascode op amp open loop gain
high end amplifier schematics
folded cascode second stage
folded cascode current mirror op amp
folded cascode rail to rail op amp
AN13310
class A push pull power amplifier
EL5157
Q7-Q10
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PA119CE
Abstract: PA119 15V 5A Power Supply Schematic PA119CEA
Text: PA119CE • PA119CEA PA119CE • PA119CEA PA119CE, PA119CEA Video Power Operational Amplifier FEATURES • VERY FAST SLEW RATE — 900 V/µs • POWER MOS TECHNOLOGY — 4A peak rating • LOW INTERNAL LOSSES — 0.75V at 2A • PROTECTED OUTPUT STAGE — Thermal Shutoff
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PA119CE,
PA119CEA
PA119CE
PA119CEA
PA119
PA119U
PA119CE
15V 5A Power Supply Schematic
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3SK121
Abstract: 3SK121 fet 3SK101 Transistor 3sk121 2sc3602 3SK114 3SK102 2SC2804 3SK115 2SC2876
Text: > MOS FET < •d s s Type No. i N-Channel ' P-channel Application VH F Amp FM RF Cascode Type 2SK241 lYfsl TYP. V DS 'D pd i (V) (mA) (mW) (mA) I I 20 30 200 1.5~14 V ds V GS (V) (V) 10 Y :3 ~ 7 0 : 1 .5 - 3.5 (mS) 10 V ds V GS (V) (V) (PF) 10 10 0.05 -3
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2sk241
3SK121
3sk101
3SK102
3SK114
3SK115
3SK145
3SK121
3SK121 fet
3SK101
Transistor 3sk121
2sc3602
3SK114
3SK102
2SC2804
3SK115
2SC2876
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SD411HD
Abstract: 1D24 vgd schematic diagram SD5000
Text: TOPAZ SEMICONDUCTOR OSE D J^GflSaab 0001024 3 | 7~"~ -L T S0411 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE DUAL D-MOS FET ORDERING INFORMATION SD411HD TO-78 Hermetic Package FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ Normally OFF Configuration Low Interelectrode Capacitances
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SD411HD
Common-Source11'
80//sec,
SD5000
SD411HD
1D24
vgd schematic diagram
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PA119
Abstract: PA119CE
Text: PA119CE • PA119CEA PA119CE • PA119CEA PA119CE, PA119CEA Video Power Operational Amplifier FEATURES • VERY FAST SLEW RATE — 900 V/µs • POWER MOS TECHNOLOGY — 4A peak rating • LOW INTERNAL LOSSES — 0.75V at 2A • PROTECTED OUTPUT STAGE — Thermal Shutoff
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PA119CE,
PA119CEA
PA119CE
PA119CEA
PA119
PA119U
PA119CE
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SD5501
Abstract: TELEDYNE SD5501J
Text: TELEDYNE COMPONENTS 5ÖE D • û ilT b O a GODtiMS4 T SD5501 SEMICONDUCTOR N-CHANNEL DEPLETION-MODE 4-CHANNEL D-MOS FET ARRAY ORDERING INFORMATION Sorted Chips in Waffle Pack 16-Pin Ceramic Dual In-tine Package 16-Pin Plastic Dual In-Line Package SD5501CHP'
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SD5501
SD5501CHP-
16-Pin
SD5501J
16-Plrt
SD55Q1N
30Vdc
Voltage111
Match111,
TZ5911
SD5501
TELEDYNE
SD5501J
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Untitled
Abstract: No abstract text available
Text: • PA09A PA09PA09 • PA09A PA09, PA09A Power Operational Amplifier FEATURES • POWER MOS TECHNOLOGY — 2A peak rating • HIGH GAIN BANDWIDTH PRODUCT — 150MHz • VERY FAST SLEW RATE — 200V/µs • PROTECTED OUTPUT STAGE — Thermal shutoff • EXCELLENT LINEARITY — Class A/B output
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PA09A
PA09A
150MHz
PA09U
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PA09U
Abstract: No abstract text available
Text: PA09PA09 • PA09A • PA09A PA09, PA09A Power Operational Amplifier FEATURES • POWER MOS TECHNOLOGY — 2A peak rating • HIGH GAIN BANDWIDTH PRODUCT — 150MHz • VERY FAST SLEW RATE — 200V/µs • PROTECTED OUTPUT STAGE — Thermal shutoff • EXCELLENT LINEARITY — Class A/B output
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PA09A
PA09A
150MHz
PA09U
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folded cascode rail to rail op amp
Abstract: folded cascode second stage CMOS differential amplifier cascode folded cascode current mirror op amp high end amplifier schematics rail-to-rail differential amplifier AN1306 EL5157 EL5160 EL5411
Text: Avoid Instability in Rail to Rail CMOS Amplifiers Application Note Introduction The minimum feature size of the MOS transistor has been greatly reduced since its invention just a few decades ago. Reductions in gate oxide thickness, channel length and width have been responsible for a revolutionary reduction in
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150pF
AN1306
folded cascode rail to rail op amp
folded cascode second stage
CMOS differential amplifier cascode
folded cascode current mirror op amp
high end amplifier schematics
rail-to-rail differential amplifier
EL5157
EL5160
EL5411
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Untitled
Abstract: No abstract text available
Text: PA09 •PA09A APEX MICROTECHINJOLOGY CORPORATION • APPLICATIONS HOTLINE 800 546-APEX 800-5-46-2739 FEATURES • • • • • • • POWER MOS TECHNOLOGY — 2A peak rating HIGH GAIN BANDWIDTH PRODUCT — 150MHz VERY FAST SLEW RATE — 400V/^s PROTECTED OUTPUT STAGE — Thermal shutoff
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PA09A
546-APEX
150MHz
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J FET RF Cascode Input
Abstract: T431 Teledyne Semiconductor teledyne fet u
Text: TELEDYNE C O M P O N EN T S döE » MI Ö TlTbO H 000 3430 T - US'- b « -S '* SD2100 SEMICONDUCTOR_ N-CHANNEL DEPLETION-MODE D-MOS FET ORDERING INFORMATION TO-2Q6AF (TO-72 Hermetic Package SD2100DË with Shorting Ring on lead«
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SD2100
SD2100DË
SD2100DE/Ft
SO-16)
OT-143)
J FET RF Cascode Input
T431
Teledyne Semiconductor
teledyne fet u
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diagram of ic 7941
Abstract: Teledyne Semiconductor
Text: eäE TELEDYNE COMPONENTS Ir M Jæ Æ D ÜTL7bü2 QOUb4b7 ? m • Æ TZ5 9 1 1 SEMICONDUCTOR N-CHANNEL DEPLETION-MODE DUAL D-MOS FET ORDERING INFORMATION TQ-78 Hermetic Package TZ5911HD SO-8 Surface Mount Package T259110V FEATURES APPLICATIONS ■ ■ ■ ■
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TQ-78
TZ5911HD
T259110V
OT-143)
diagram of ic 7941
Teledyne Semiconductor
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Untitled
Abstract: No abstract text available
Text: • PA09A PA09PA09 • PA09A PA09, PA09A Power Operational Amplifier FEATURES • POWER MOS TECHNOLOGY — 2A peak rating • HIGH GAIN BANDWIDTH PRODUCT — 150MHz • VERY FAST SLEW RATE — 200V/µs • PROTECTED OUTPUT STAGE — Thermal shutoff • EXCELLENT LINEARITY — Class A/B output
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PA09A
150MHz
PA09U
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Untitled
Abstract: No abstract text available
Text: FEATURES • • • • • • • POWER MOS TECHNOLOGY — 2A peak rating HIGH GAIN BANDWIDTH PRODUCT — 150MHz VERY FAST SLEW RATE — 4 0 0 V / hs PROTECTED OUTPUT STAGE — Thermal shutoff EXCELLENT LINEARITY — Class A /B output WIDE SUPPLY RANGE — ±12V to ±40V
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150MHz
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To206AF
Abstract: SD2100 SD2100DE vgd schematic diagram
Text: TOPAZ SE MIC ONDUCTOR OSE D Q ^OflSSab 0001053 0 | SE M IC O N D U C T O R _ S D 2 M N-CHANNEL DEPLETION-MODE D-MOS FET ORDERING INFORMATION TO-206AF TO-72 Hermetic Package with Shorting Ring on leads SD2100DE SD2100DE/R Description '•
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O-206AF
SD2100DE
SD2100DE/R
Common-Source111
80/ysec,
TZ5911
To206AF
SD2100
SD2100DE
vgd schematic diagram
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2SK241
Abstract: 2sk241 mos fet dual-gate DC bias of FET 2SK302
Text: 3. 3-TERMINAL MOS FET FOR USE AT HIGH-FREQUENCIES 2SK241, 2SK302 nal injector terminal for mixer circuits, and an AGC terminal. However, there is another method as shown in Figure 3.1. This shows a typical high-frequency amplifier in a Hi-Fi tuner. Gate 2 in the figure is
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2SK241,
2SK302)
2SK241)
2SK882)
2SK241
2sk241 mos fet
dual-gate
DC bias of FET
2SK302
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