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    MOS 4016 R ON Search Results

    MOS 4016 R ON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    MOS 4016 R ON Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    icl7660 harris

    Abstract: HI7188 ICL7660 ICL7660S ICL7660 equivalent
    Text: Harris Semiconductor No. AN9620 Harris Data Acquisition May 1996 Using the HI7188 with a Single Supply Author: John D. Norris Introduction ICL7660S Voltage Converter The HI7188 is an easy-to-use, 16-bit, 8-channel, sigma-delta A/D subsystem ideal for low frequency physical and electrical


    Original     		AN9620 HI7188 ICL7660S 16-bit, 1-800-4-HARRIS icl7660 harris ICL7660 ICL7660 equivalent PDF

    TH58NVG2S3BTG00

    Abstract: th58nvg th58nvg2s3btg TH58NVG2S3 PSL 26 DIN2111 PA15 PA16 th58nvg*t TH58NVG2S3B
    Text: TH58NVG2S3BTG00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM Lead-Free DESCRIPTION The TH58NVG2S3B is a single 3.3 V 4Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096 blocks.


    Original     		TH58NVG2S3BTG00 TH58NVG2S3B 2112-byte 004-08-20A TH58NVG2S3BTG00 th58nvg th58nvg2s3btg TH58NVG2S3 PSL 26 DIN2111 PA15 PA16 th58nvg*t PDF

    CI 4066 vol

    Abstract: 74HCT logic family specifications HCT CMOS family characteristics 74HCMOS MGK563 hcmos family CI 4016 74HCT Logic Family Specification CMOS Logic Family Specifications F TTL family characteristics
    Text: INTEGRATED CIRCUITS DATA SHEET FAMILY SPECIFICATIONS HCMOS family characteristics March 1988 File under Integrated Circuits, IC06 Philips Semiconductors FAMILY SPECIFICATIONS HCMOS family characteristics A subset of the family, designated as XX74HCTXXXXX,


    Original     		XX74HCTXXXXX, 74HC/HCT/HCU 74HCU 74HCT CI 4066 vol 74HCT logic family specifications HCT CMOS family characteristics 74HCMOS MGK563 hcmos family CI 4016 74HCT Logic Family Specification CMOS Logic Family Specifications F TTL family characteristics PDF

    transistor KSD1 105

    Abstract: No abstract text available
    Text: SPLC701B 11x12 and 6x12 Text and Graphics Liquid Crystal Display Controller/Driver JAN. 05, 2005 Version 1.3 Sunplus Technology reserves the right to change this documentation without prior notice. Information provided by Sunplus Technology is believed to be


    Original     		SPLC701B 11x12 transistor KSD1 105 PDF

    KSD1 180

    Abstract: KSD1 65
    Text: SPLC701B 11x12 and 6x12 Text and Graphics Liquid Crystal Display Controller/Driver MAY. 17, 2005 Version 1.5 Sunplus Technology reserves the right to change this documentation without prior notice. Information provided by Sunplus Technology is believed to be


    Original     		SPLC701B 11x12 KSD1 180 KSD1 65 PDF

    TC58DVM92A3TA00

    Abstract: TC58DVM92A3
    Text: TC58DVM92A3TA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512-MBIT 64 M x 8 BITS CMOS NAND E PROM DESCRIPTION The device is a single 3.3 V 512-Mbit (553,648,128 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 4096 blocks. The device has a 528-byte


    Original     		TC58DVM92A3TA00 512-MBIT 528-byte 528-byte TC58DVM92A3TA00 TC58DVM92A3 PDF

    TC58DVM92A5BAJ3

    Abstract: TC58DVM92A5 TC58DVM92A
    Text: TC58DVM92A5BAJ3 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512-MBIT 64M x 8 BITS CMOS NAND E PROM DESCRIPTION The device is a single 3.3 V 512Mbit (553,648,128 bit) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 4096 blocks. The device has a 528-byte static


    Original     		TC58DVM92A5BAJ3 512-MBIT 512Mbit 528-byte TC58DVM92A5BAJ3 TC58DVM92A5 TC58DVM92A PDF

    TC58DYM92A5TAI0

    Abstract: No abstract text available
    Text: TC58DYM92A5TAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512-MBIT 64M x 8 BITS CMOS NAND E PROM DESCRIPTION The device is a single 1.8 V 512Mbit (553,648,128 bit) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 4096 blocks. The device has a 528-byte static


    Original     		TC58DYM92A5TAI0 512-MBIT 512Mbit 528-byte TC58DYM92A5TAI0 PDF

    TC58DVM92A5TAI0

    Abstract: TC58DVM92A5TA TC58DVM92A5 TC58DVM92A
    Text: TC58DVM92A5TAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512-MBIT 64M x 8 BITS CMOS NAND E PROM DESCRIPTION The device is a single 3.3 V 512Mbit (553,648,128 bit) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 4096 blocks. The device has a 528-byte static


    Original     		TC58DVM92A5TAI0 512-MBIT 512Mbit 528-byte TC58DVM92A5TAI0 TC58DVM92A5TA TC58DVM92A5 TC58DVM92A PDF

    NAND read disturb

    Abstract: TC58DYM92A5BAJ3
    Text: TC58DYM92A5BAJ3 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512-MBIT 64M x 8 BITS CMOS NAND E PROM DESCRIPTION The device is a single 1.8 V 512Mbit (553,648,128 bit) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 4096 blocks. The device has a 528-byte static


    Original     		TC58DYM92A5BAJ3 512-MBIT 512Mbit 528-byte NAND read disturb TC58DYM92A5BAJ3 PDF

    TC58DYM92A5TA00

    Abstract: No abstract text available
    Text: TC58DYM92A5TA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512-MBIT 64M x 8 BITS CMOS NAND E PROM DESCRIPTION The device is a single 1.8 V 512Mbit (553,648,128 bit) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 4096 blocks. The device has a 528-byte static


    Original     		TC58DYM92A5TA00 512-MBIT 512Mbit 528-byte TC58DYM92A5TA00 PDF

    TH58NVG2S3

    Abstract: TH58NVG2S3BFT00 TH58NVG toshiba TH58NVG th58 th58nv toshiba nand plane size TH58NVG2S MOS 4016 PSL 26
    Text: TH58NVG2S3BFT00/TH58NVG2S8BFT00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT/256M × 16 BIT CMOS NAND E PROM DESCRIPTION The TH58NVG2SxB is a single 3.3 V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable


    Original     		TH58NVG2S3BFT00/TH58NVG2S8BFT00 BIT/256M TH58NVG2SxB 2112-byte/1056-word 2112-byte 003-10-30A TH58NVG2S3 TH58NVG2S3BFT00 TH58NVG toshiba TH58NVG th58 th58nv toshiba nand plane size TH58NVG2S MOS 4016 PSL 26 PDF

    7805CT

    Abstract: MOC5010 ip1717 UA741CN op amp TL081P LM3524N LM13080N 7824ct LM7915CK LM7905CK
    Text: Master Designer Version 8.5 Component Library Reference Volume 2 October 1995 All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted, in any form or by any means-electronic, mechanical, photocopying, recording, or otherwise-without the prior


    Original     		PDF

    4016 ic

    Abstract: No abstract text available
    Text: COS/MOS INTEGRATED CIRCUIT QUAD • • • • • • • • • • • • • • • A o \ t , * > h c c îh c f « m b B IL A T E R A L S W IT C H 20V D IG IT A L OR ± 10V P E A K -T O -P E A K SW ITCHING 2 8 0 « T Y P IC A L ON RESISTANCE FOR 15V O PE R ATIO N


    OCR Scan     		10kHz, 4016B CF4016B 4016 ic PDF

    vlf 12.5 kHz schematic

    Abstract: 4416B 4000B 4016B MAXIMUM ANALOG SWITCH DPDT
    Text: 4416B INTERNATIONAL, INC. CMOS QUAD ANALOG SWITCH FEA TU R ES ♦ DPDT Switch Operation Without External Logic ♦ Wide Range of Digital and Analog Signal Levels — Digital or Analog Signal to 18 Volts peak ♦ Low ON Resistance — 200 f í typ. over 15Vp.p Signal Input Range,


    OCR Scan     		4416B 10kf2 vlf 12.5 kHz schematic 4416B 4000B 4016B MAXIMUM ANALOG SWITCH DPDT PDF

    ferranti array

    Abstract: No abstract text available
    Text: MH SERIES FERRANTI INTERDESIGN, INC. HIGH VOLTAGE SILICON GATE CMOS ARRAYS FEATURES • Oxide Isolated Polysilicon Gate CM OS Technology. • 3V to 15V Specified Operating Voltage. • Operation up to 40MHz at 15V, 15MHz at 5V. • 8 Arrays Ranging from 70 to 1600 Two Input


    OCR Scan     		40MHz 15MHz ferranti array PDF

    TH58512FT

    Abstract: No abstract text available
    Text: TOSHIBA TH58512FT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE 512-MBIT 64M X SILICON GATE CMOS 8 BITS CMOS NAND E2PROM DESCRIPTION The TH58512 is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes X 32 pages X 4096 blocks.


    OCR Scan     		TH58512FT 512-MBIT TH58512 528-byte TH58512FT PDF

    TSOP 48 Package nand memory toshiba

    Abstract: 1076H CD 4016 PIN DIAGRAM TH58512FTI TH58512FT
    Text: TH58512FTI TOSHIBA TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 512-MBIT 64M SILICON GATE CMOS X 8 BITS CMOS NAND E2PROM DESCRIPTION The TH58512 is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically E rasable and Programmable Read-Only Memory (NAND E 2PROM) organized as 528 bytes X 32 pages X 4096 blocks.


    OCR Scan     		TH58512FTI 512-MBIT TH58512 528-byte TSOP 48 Package nand memory toshiba 1076H CD 4016 PIN DIAGRAM TH58512FTI TH58512FT PDF

    TH58512FT

    Abstract: No abstract text available
    Text: TOSHIBA TH58512FT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 512-MBIT 64M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TH58512 is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes X 32 pages X 4096 blocks.


    OCR Scan     		TH58512FT 512-MBIT TH58512 528-byte 48-P-1220-0 TH58512FT PDF

    internal structure of ic 4017

    Abstract: 4518 CI
    Text: C2MOS Logic TC74HC/HCT Series 7. Common Electrical Characteristics 7-1 Power Dissipation The power dissipation of CMOS device is composed of two components: one static, the other dynamic.The total power dissipation is the sum of static and dynamic power dissipation.


    OCR Scan     		TC74HC/HCT internal structure of ic 4017 4518 CI PDF

    internal structure of ic 4017

    Abstract: 4518 CI increase the output of Ic 4017 4511 e 4518 CI
    Text: 7. COMMON ELECT RICAL CHARACTERISTICS 7 -1 Pow er Dissipation The power dissipation of CMOS device is com posed of two com ponents: one static, the other dynam ic. The total power dissipation is the sum of static and dynam ic power dissipation. Static power dissipation is obtained by m ultiplying quiescent supply current by the supply voltage


    OCR Scan     		PDF

    HC-88

    Abstract: hc81
    Text: 7. COMMON E L E C T R IC A L C H A R A C T E R IS T IC S 7-1 Powtr Dissipation T h e pow er d issip a tio n of CMOS device is com posed of tw o com ponents: one s ta tic , the o th e r d y n am ic. T h e to ta l pow er d issip a tio n is the B u m of sta tic a n d d y n a m ic pow er d issip atio n .


    OCR Scan     		HC-90 HC-88 hc81 PDF

    ic 6116 from texas instruments

    Abstract: ma 6116 f6 transistor tic 2250 4016 static ram tms4016
    Text: MILITARY CM O S SMJ5517 2048 WORD BY 8-BIT STATIC RAM LSI DECEMBER 1 9 8 3 SMJ5517 . . . JD PACKAGE 1 TOP VIEW 2K X 8 Organization. Common I/O Single + 5 -V Supply • Fully Static Operation (No Clocks, No Refresh) A7 C 1 ^ 2 4 H vcc 23 ] A 8 22 U A 9 21 D W


    OCR Scan     		SMJ5517 24-Pin 600-M B8416. TC5517 54S/74S, 54LS/74LS 54ALS/74ALS SMJ5517 ic 6116 from texas instruments ma 6116 f6 transistor tic 2250 4016 static ram tms4016 PDF

    4500B AA

    Abstract: No abstract text available
    Text: 7. COMMON ELECTRICAL CHARACTERISTICS 7 -1 P o w e r D is s ip a tio n The power dissipation of CMOS device is com posed of two components: one static, the other dynam ic. The total power dissipation is the sum of static and d yn am ic power dissipation. Static power dissipation is obtained by m ultiplyin g quiescent supply current by the supply voltage


    OCR Scan     		CHARACTERISTICS-16 4500B AA PDF