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    MOS 2 GATE Search Results

    MOS 2 GATE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    MOS 2 GATE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TPCP8407 MOSFETs Silicon P-/N-Channel MOS U-MOS /U-MOS  TPCP8407 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) Small, thin package (2) Low gate charge N-channel MOSFET: QSW = 4.7 nC (typ.) P-channel MOSFET: QSW = 5.5 nC (typ.)


    Original     		PDF TPCP8407

    Untitled

    Abstract: No abstract text available
    Text: TPCP8407 MOSFETs Silicon P-/N-Channel MOS U-MOS /U-MOS  TPCP8407 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) Small, thin package (2) Low gate charge N-channel MOSFET: QSW = 4.7 nC (typ.) P-channel MOSFET: QSW = 5.5 nC (typ.)


    Original     		PDF TPCP8407

    M140 diode

    Abstract: g19278
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2716AGR SWITCHING P-CHANNEL POWER MOS FET PACKAGE DRAWING Unit: mm DESCRIPTION The μ PA2716AGR is P-Channel MOS Field Effect 8 Transistor designed for power management applications of 5 1, 2, 3 : Source 4 : Gate


    Original     		PDF PA2716AGR M140 diode g19278

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA2706GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µPA2706GR is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management 8 5 1, 2, 3 ; Source 4 ; Gate


    Original     		PDF PA2706GR PA2706GR

    transistors BC 543

    Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF OT-23 OT-363 OT-143 transistors BC 543 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5

    PA2702GR

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2702GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µPA2702GR is N-Channel MOS Field Effect Transistor 8 designed for DC/DC converters and power management 5 1, 2, 3 ; Source 4 ; Gate


    Original     		PDF PA2702GR PA2702GR

    Pch MOS FET

    Abstract: US6M2 TUMT6
    Text: US6M2 Transistors 2.5V Drive Nch+Pch MOS FET US6M2 zStructure Silicon N-channel MOS FET / Silicon P-channel MOS FET zExternal dimensions Unit : mm TUMT6 2.0 0.85Max. (2) (1) (3) 1pin mark 0.2 1.7 zFeatures 1) Nch MOS FET and Pch MOS FET are put in TUMT6 package.


    Original     		PDF 85Max. 15Max. Pch MOS FET US6M2 TUMT6

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2702GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µPA2702GR is N-Channel MOS Field Effect Transistor 8 designed for DC/DC converters and power management 5 1, 2, 3 ; Source 4 ; Gate


    Original     		PDF PA2702GR PA2702GR

    PA2700GR

    Abstract: PA2700
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2700GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µPA2700GR is N-Channel MOS Field Effect Transistor 8 designed for DC/DC converters and power management 5 1, 2, 3 ; Source 4 ; Gate


    Original     		PDF PA2700GR PA2700GR PA2700

    PA2700GR

    Abstract: UPA2700GR
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2700GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µPA2700GR is N-Channel MOS Field Effect Transistor 8 designed for DC/DC converters and power management 5 1, 2, 3 ; Source 4 ; Gate


    Original     		PDF PA2700GR PA2700GR UPA2700GR

    PA1755

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1755 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING Unit : mm DESCRIPTION This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters and power 8 5 1 ; Source 1 2 ; Gate 1


    Original     		PDF PA1755 PA1755

    PA1759

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1759 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1759 is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters. 8 5 1 ; Source 1 2 ; Gate 1


    Original     		PDF PA1759 PA1759 PA1759G

    PA1763

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1763 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1763 is N-Channel MOS Field Effect Transistor designed for DC/DC Converters. 8 5 1 : Source 1 2 : Gate 1


    Original     		PDF PA1763 PA1763

    PA1759

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1759 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING Unit : mm DESCRIPTION This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters. 8 5 1 ; Source 1 2 ; Gate 1


    Original     		PDF PA1759 PA1759G PA1759

    PA1754

    Abstract: PA1754G
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1754 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING Unit : mm DESCRIPTION This product is Dual N-channel MOS Field Effect Transistor designed for Li-ion battery applications 8 5 1 ; Source 1 2 ; Gate 1


    Original     		PDF PA1754 PA1754 PA1754G

    PA2770GR

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2770GR SWITCHING DUAL P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The μ PA2770GR is Dual P-Channel MOS Field Effect Transistors designed for Motor Drive application. 8 5 1 ; Source 1 2 ; Gate 1


    Original     		PDF PA2770GR PA2770GR M8E0904E

    PA1727

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1727 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µPA1727 is N-Channel MOS Field Effect Transistor designed for high current switching applications. 8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain


    Original     		PDF PA1727 PA1727 PA1727G

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2756GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA2756GR is Dual N-channel MOS Field Effect Transistor designed for switching applications. 8 5 1 : Source 1 2 : Gate 1 7, 8: Drain 1


    Original     		PDF PA2756GR PA2756GR

    SN7401

    Abstract: SN5401 W14A DS7810J m7403 SN7403 DS8812N 7403 MM506 N14A
    Text: DS7810/DS8810, DS7811/DS8811, DS7812/DS8812 ^ . Level Translators/Buffers National Semiconductor DS7810/DS8810 Quad 2-Input TTL-MOS Interface Gate DS7811/DS8S11 Quad 2-Input TTL-MOS Interface Gate DS7812/DS8812 Hex TTL-MOS Inverter General Description In a d d itio n th e devices m ay be used in applicatio n s


    OCR Scan     		PDF DS7810/DS8810 DS7811/DS8811 DS7812/DS8812 DM5401/DM7401 SN5401 /SN7401 5403/SN 5405/DM7405 SN5405/SN7405) DS7810, SN7401 W14A DS7810J m7403 SN7403 DS8812N 7403 MM506 N14A

    2SK12

    Abstract: 2SK1282 MEI-1202 TEA-1035 A 1282 transistor 2SK128 2SK1282-Z
    Text: DATA SHEET i MOS FIELD EFFECT POWER TRANSISTOR 2 S K 1 2 8 2 , 1 2 8 2 - Z SWITCHING N-CHANIMEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1282/1282-Z is N-channel MOS Field Effect PACKAGE DIMENSIONS in m illim eters Transistor designed fo r solenoid, m otor and lamp


    OCR Scan     		PDF 2SK1282 2SK1282-Z IEI-1209) 2SK12 MEI-1202 TEA-1035 A 1282 transistor 2SK128

    SN7401

    Abstract: DS8812N DS8810J VU14A m7403 SN74* inverter DS7810J SN5401 7403 N14A
    Text: DS7810/DS8810, DS7811/DS8811, DS7812/DS8812 ^ . Level Translators/Buffers National Semiconductor DS7810/DS8810 Quad 2-Input TTL-MOS Interface Gate DS7811/DS8S11 Quad 2-Input TTL-MOS Interface Gate DS7812/DS8812 Hex TTL-MOS Inverter General Description In a d d itio n th e devices m ay be used in applicatio n s


    OCR Scan     		PDF DS7810/DS8810 DS7811/DS8811 DS7812/DS8812 DM5401/DM7401 SN5401 /SN7401 5403/SN 5405/DM7405 SN5405/SN7405) DS7810, SN7401 DS8812N DS8810J VU14A m7403 SN74* inverter DS7810J 7403 N14A

    TC-799

    Abstract: NEC 2sk2134 nec 2134 2sk2134
    Text: i A I A di il. t ! MOS FIELD EFFECT POWER TRANSISTORS 2 S K 2 1 3 4 , 2 S K 2 1 3 4 - Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2134, 2SK2134-Z are N-channel Power MOS Field Effect Transistors designed for high voltage switching applications.


    OCR Scan     		PDF 2SK2134, 2SK2134-Z 2SK2134-Z IEI-1209) 2134-Z TC-799 NEC 2sk2134 nec 2134 2sk2134

    2SK2136

    Abstract: No abstract text available
    Text: MOS FIELD EFFECT POWER TRANSISTORS 2 S K 2 1 3 6 , 2 S K 2 1 3 6 - Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2136, 2SK2136-Z are N -channel Power MOS Field Effect Transistors designed fo r h ig h vo lta g e sw itch in g applications.


    OCR Scan     		PDF 2SK2136, 2SK2136-Z 2SK2136-Z IEI-1209) 2136-Z 2SK2136

    Untitled

    Abstract: No abstract text available
    Text: TA8437F TENTATIVE o SMART MOS DUAL H-BRIDGE DRIVER IC Unit in mm 12.6 + 0.2 TA843TF is monolithic type Smart MOS IC 2 ways - 0 .2 5 ÖÖ 12.4 TYP H-bridge driver IC, which employs 2 units of H-bridge 0.23To35 lf^ ' composed of MOS FET output and their control unit.


    OCR Scan     		PDF TA8437F TA843TF 23To3