CA3098
Abstract: water level sensor schematic diagram CA3098 data sheet CA3098E schematic diagram water level control 1N914 MS-001-BA T2301B 12v dc water pump programmable schmitt trigger
Text: tle 3098 bject gramle mitt ger with mory, l Input cision el ector) thor ) ywords rris miconor, sin- CT T ODU CEMEN 7 R P E A 74 T L 7 E Semiconductor OL REP 00-442OBS ENDED 8 1 m s.co MM ions ECO pplicat p@harri R O N ral A centap Cent : Call or email Programmable Schmitt Trigger with
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CA3098
1-800-4-HARRIS
water level sensor schematic diagram
CA3098 data sheet
CA3098E
schematic diagram water level control
1N914
MS-001-BA
T2301B
12v dc water pump
programmable schmitt trigger
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AS6C1008
Abstract: AS6C1008-55
Text: February 2007 AS6C1008 128K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time :55ns Low powe r consumption: Operating current:10 mA TYP. Standby current: 1 µA (TYP.) Single 2.7V ~ 5.5V po we r supply Fully Compatible with all Competitors 5V product
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AS6C1008
32-pin
36-ball
AS6C1008
02/February/07,
AS6C1008-55
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Untitled
Abstract: No abstract text available
Text: OMAP3515/03 Applications Processor www.ti.com SPRS505C – FEBRUARY 2008 – REVISED FEBRUARY 2009 1 OMAP3515/03 Applications Processor • • • OMAP3515/03 Applications Processor: – OMAP 3 Architecture – MPU Subsystem • 600-MHz ARM Cortex™-A8 Core
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OMAP3515/03
SPRS505C
600-MHz
OMAP3515
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AK7782
Abstract: DOLBY DAEP
Text: AKM Semiconduct S tor 888 256-7364 e-mail: icinfo@ @akm.com AK778 82 Press Rellease New du ual-core aud dio DSP inteegrates five-channel 244-bit audio A ADC’s and a two-channel samplin ng rate conv verter for multi-chann m el automotiive infotainm ment appliccations
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AK778
AK7782
24-bit
witch-7364,
DOLBY DAEP
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verilog coding using instantiations
Abstract: DS512 XAPP917
Text: w Application Note: Migration Guide R Block mory Generator Migration Guide XAPP917 v5.0 September 16, 2009 Summary This document provides step-by-step instructions for migrating designs containing instances of either the legacy mory cores (Dual Port Block mory and Single Port Block mory cores)
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XAPP917
verilog coding using instantiations
DS512
XAPP917
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RAMB16WER
Abstract: blk_mem_gen DS512 XAPP917 vhdl coding for pipeline
Text: Application Note: Migration Guide Block mory Generator Migration Guide XAPP917 v6.0 April 19, 2010 Summary This document provides step-by-step instructions for migrating designs containing instances of either the legacy mory cores (Dual Port Block mory and Single Port Block mory cores)
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XAPP917
RAMB16WER
blk_mem_gen
DS512
XAPP917
vhdl coding for pipeline
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LC3764P
Abstract: No abstract text available
Text: O rd ering number : EN 2 94 7 B i sm YO LC3764P N0.2947B CMOS LSI 8192 Woçds X 8 Bits CMOS Mask-Programmable ROM V O verview // The LC3764P is an 8192 words X 8-bit low-power CMOS m ask-prograiptpiblejii^-on1- ^ mory:with a maximum access time of 150ns. All inputs and outputs are fully TTl^ipfnpatil|jp. Ik
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2947B
LC3764P
LC3764P
150ns.
28-pin
150ns
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY SPECIFICATION Rev 1 GM23C4000 524,288 X 8 BITS CMOS STATIC READ ONLY MORY Description Pin Configuration The GM23C4000 high-performance Read Only Me mory is organized as 524,288 words by eight bits and has an access time of 150 ns. It is designed to be
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GM23C4000
GM23C4000
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 128K x 8 Bit Static Random Access mory MCM6226B WJ PACKAGE 400 MIL SOJ CASE 857A-02 The M C M 6226B is a 1,048,576 bit static random a ccess me mory organized as 131,072 w ords of 8 bits, fabricated using h ig h -p e rfo rm a n :e s iiic o n -g a te
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6226B
r--------------226E:
MCM6226BJ15
MCM6226BJ17
MCM6226BJ20
MCM6226BJ25
MCM6226BJ35
M6226BJ15R2
MCM6226BJ17R2
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GM23C4000
Abstract: No abstract text available
Text: PRELIMINARY SPECIFICATION Rev 1 G M 23C4000 524,288 X 8 BITS CMOS STATIC READ ONLY MORY Description The GM23C4000 high-performance Read Only Me mory is organized as 524,288 words by eight bits and has an access time of 150 ns. It is designed to be compatible with all microprocessors and similar ap
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GM23C4000
GM23C4000
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BPU-1640TQAH12
Abstract: ot 112
Text: ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 YnbTpa3ByKOBbie npeo6pa30BaTenM AByHanpasneHHbie ynbTpa3ByKOBbie npeo6pa30BaienM MoryT pa6oiaTb m KaK npMeMHMK, mKaKnepeflaTHMK. Pa6oHafl HacTOTa : 40 Krq ypoBeHbaKycTMHecKoroflaBneHMa npM p a 6 o ie
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npeo6pa30BaTenM
npe06pa30BaTenn
npe06pa30Baienn
cm/10
flMana30H
-74flBB/MK6ap
Vpp/40
16x12
BPU-1640TQAH12
BPU-1640TQAH12
ot 112
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TSM320
Abstract: No abstract text available
Text: MHTEPTEKC w w w .i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 M M H M a T r o p H b ie M O H T M p y e M u e M 3 M e p M T e n M H a T e M n e p a T y p b i, n a H e n b PAN.TSM 220 m PAN.TSM 320 - 3to MOHTMpyeMbie Ha naHenb npM6opbi M3MepeHM3 m KOHTpona TeMnepaiypbi. Moryr ydaHaBnMBaTbCfl, HanpMMep, b
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06ecneHMBaioT
0C06eHH0CTM:
06nerHaK
B03M0WH0CTbi0
0T06paweHM5i
B03M0WH0CTb
-06H0BneHMe
Anana30H
tok20
TSM220
TSM320
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PSA08-11EWA
Abstract: PSA08-11GWA PSA08-11SRWA Kingbright PSA08-11EWA
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 E y K B e H H O -M M $ p O B b ie M H flM K aTO pbl 20 MM B b ico ia 3HaKa : 20 mm np0M3B0flMTenb : Kingbright MoryT 0 T06 pa^aTb KaK u,M#pbi, TaK m 6yKBbi. flMana30H CMnbi CBeTa yKa3aH npM 10 mA.
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0T06paÂ
flMana30H
PSA08-11EWA
PSA08-11GWA
PSA08-11SRWA
PSA08-11SRWA
Kingbright PSA08-11EWA
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TCD104C
Abstract: 2sa1016 DS0026CN
Text: TOSHIBA {L OG IC /ME MORY} T? DDD^sm 9097248 TOSHIBA LOGIC/MORY CCD IMAGE SENSOR CCD (Charge Coupled Device) TCD104C 67.C 0 9 5 4 1 D T-41-55 The TCD104C is a high resolution and high sensitivity 128 element linear image sensor. The device can be used for OCR, POS handscanner
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TCD104C
T-41-55
TCD104C
32/im
4D12A-C)
T-41-5
85-Q05
2sa1016
DS0026CN
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI M E MORY/ASIC blE T> bSHIfiSS DOlflbn •MITI 533 MITSUBISHI LS Is M5M5279P, J-15,-20,-25,-35 294912-BIT (32768-WORD BY 9-BIT) CMOS STATIC RAM DESCRIPTION The M5M5279 is a family of 32768-word by 9 bit static PIN CONFIGURATION (TOP VIEW) RAMs. fabricated with the high-performance CMOS silicon
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M5M5279P,
294912-BIT
32768-WORD
M5M5279
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DS75176A
Abstract: DS75176AT DS75176AM DS75176AJ-8 DS7S176
Text: DS75176A/DS75176AT NATL SEUICOND {ME MORY} IDE D | b S D U B b National Semiconductor □□b23S2 □ | p r e l im in a r y T-75-45-05 DS75176A/DS75176AT Multipoint RS-485/RS-422 Transceivers General Description The DS75176A is a high speed differential TRI-STATE
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T-75-45-05
DS75176A/DS75176AT
RS-485/RS-422
DS75176A
RS485
RS422.
10lls
TL/F/8759-9
DS7S176A
DS75176AT
DS75176AM
DS75176AJ-8
DS7S176
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Untitled
Abstract: No abstract text available
Text: ADV MI CRO ME MORY b4E » GSS7SSÛ DD3SÜSD ÖS1 • AMD4 il Am27C400 Advanced Micro Devices 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) ROM Compatible CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access tim e Single +5 V pow er sup ply — 100 ns ■ Low pow er consum ption
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Am27C400
8-Bit/262
16-Bit)
44-pin
42-pin
0032D31
KS000010
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Untitled
Abstract: No abstract text available
Text: FUJITSU M I CRO EL EC TR ON IC S FUJITSU S3E D • 3 7 ‘H 7 t a GD07417 7 ■ MB85235-10 IH X 9 DRAM MODULE MB85235-12 1,048,576 x 9 BIT DYNAMIC RANDOM ACCESS MORY MODULE The F u j i t s u MB85235 is a fully decoded, dynamic CMOS r a n d o m access m e mory module w i t h eight MB81C1000, in
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GD07417
MB85235-10
MB85235-12
MB85235
MB81C1000,
30-pin
30-pad
MB8523S
MB85235
MB81Creshed.
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DS7S1
Abstract: No abstract text available
Text: NATL SEMICOND {ME MORY} IDE D | b S O H E b -r- is - - ^ b - o 7 DS55107/DS55108/DS75107/DS75108/DS75208 Dual Line Receivers useful in certain applications that-have multiple V c c + sup plies or V c c + supplies that are turned off. General Description
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b50115b
DS55107/DS55108/DS75107/DS75108/DS75208
SN55109/SN75109
fiA75110/
DS75110
DS75107/DS75108/DS75208
A55107A/
DS55107A
DS55107/DS75107,
DS55108/DS75108,
DS7S1
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Fujitsu M5MO
Abstract: M5mo IMC060-P100
Text: SPEC No. ISSUE: EL083067 Mar 7 1996 T o ;_ n r * ! w is*' " ~ n M, n \ / <• '. y :r i ì 1 1 i l S P E C I F I C A T I O N S Product Type 16MB F LASH M E MORY CARD ID23DS05 j&This specifications contains 35 pages including the cover and appendix.
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EL083067
ID23DS05
IMC060-P100
Fujitsu M5MO
M5mo
IMC060-P100
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R31-R32-R40
Abstract: No abstract text available
Text: TO SHIBA TMP47C635 CMOS 4-BIT MICROCONTROLLER TMP47C635N The 47C635 is based on the TLCS-470 CMOS series. The 47C635 has on-screen display circuit OSD to display characters and marks which indicate channel or time on TV screen, A/D converter (comparator) input, D/A
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TMP47C635
TMP47C635N
47C635
TLCS-470
47C634.
TMP47C635N
SDIP54-P-600-1
TBEKSES-30361FBY
R31-R32-R40
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P8237A
Abstract: B237A Pin Details of bus controller IC 8282
Text: 8237A 8237A Multimode DMA Controller ÌAPX86 Family DISTINCTIVE CHARACTERISTICS • • • Four independent DMA channels, each with separate registers for Mode Control, Current Address, Base Address, Current Word Count and Base Word Count Transfer modes: Block, Demand, Single Word, Cascade
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APX86
3726A
3726A
P8237A
B237A
Pin Details of bus controller IC 8282
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m8087-2
Abstract: No abstract text available
Text: M8087 NUMERIC DATA PROCESSOR Military • High Performance Numeric Data Coprocessor ■ Standard M8086 Instruction Set Plus Arithmetic, Trigonometric, Exponential, and Logarithmic Instructions for All Data Types ■ All 24 Addressing Modes Available with M8086, M8088, M80186 CPUs
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M8087
M8086
M8086,
M8088,
M80186
64-Bit
80-Bit
18-Digit
40-Pin
m8087-2
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intel i3 mtbf
Abstract: PA28F0085A-120 28F008SA E0000 E28F008SA intel PLD 29041 E28F008SA-120 PA28F0085A ER27
Text: INTEL CORP MORY/PL] / 5 bE ]) m MfliblTb D0 7 b4f l ö TTb • ITL2 ß fö iy ilO I M G W in y 28F008SA 8 MBIT (1 MBIT x 8) FLASH MORY 3 zç. ■ Hlgh-Density Symmetrically Blocked Architecture — Sixteen 64 KByte Blocks Very High-Performance Read — 85 ns Maximum Access Time
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DD7b400
28F008SA
40-Lea28F0085A-120
28F008SA-L
AP-359
AP-360
25F008SA
AP-364
intel i3 mtbf
PA28F0085A-120
E0000
E28F008SA
intel PLD
29041
E28F008SA-120
PA28F0085A
ER27
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