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    MOROCCO P3 TRANSISTOR Search Results

    MOROCCO P3 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOROCCO P3 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet 1200V 40A

    Abstract: ir igbt 1200V 40A STTA1212D igbt high frequency 1200V morocco p3 transistor IGBT trr TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE STTA12
    Text: STTA1212D  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS 12A VRRM 1200V trr typ ns VF (max) V K A IF(AV) FEATURES AND BENEFITS A ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. VERY LOW OVERALL POWER LOSSES IN


    Original     		PDF STTA1212D O220AC mosfet 1200V 40A ir igbt 1200V 40A STTA1212D igbt high frequency 1200V morocco p3 transistor IGBT trr TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE STTA12

    DIODE T53

    Abstract: transistor marking p3 SOD15 IGBT trr igbt high frequency 1200V STTA212S DI 380 Transistor TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE DIODE marking ED diode tURBOSWITCH
    Text: STTA212S  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATASHEET MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 1200V trr (typ) 65ns VF (max) 1.5V A K FEATURES AND BENEFITS SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS : FREEWHEEL OR BOOSTER DIODE


    Original     		PDF STTA212S DIODE T53 transistor marking p3 SOD15 IGBT trr igbt high frequency 1200V STTA212S DI 380 Transistor TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE DIODE marking ED diode tURBOSWITCH

    morocco p3

    Abstract: mosfet 1200V 40A IGBT Transistor 1200V, 25A mosfet 1200V 25A ir igbt 1200V 40A STTA2512P TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE IGBT Transistor 2.5a transistor marking p3 transistor P1 P 12
    Text: STTA2512P  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS 25A VRRM 1200V trr typ 60ns VF (max) 1.9V K A IF(AV) FEATURES AND BENEFITS A ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. VERY LOW OVERALL POWER LOSSES IN


    Original     		PDF STTA2512P morocco p3 mosfet 1200V 40A IGBT Transistor 1200V, 25A mosfet 1200V 25A ir igbt 1200V 40A STTA2512P TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE IGBT Transistor 2.5a transistor marking p3 transistor P1 P 12

    sod6 package

    Abstract: sod6 MARKING T11 STTB106U
    Text: STTB106U  TURBOSWITCH  ”B”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATASHEET MAIN PRODUCTS CHARACTERISTICS IF AV 1A VRRM 600V trr (typ) 45ns VF (max) 1.3V A K FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS : SNUBBING OR CLAMPING,


    Original     		PDF STTB106U sod6 package sod6 MARKING T11 STTB106U

    DIODE P1

    Abstract: P4 transistor STTA3006CW diode tURBOSWITCH morocco p3 transistor TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE
    Text: STTA3006CW  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODES PRELIMINARY DATASHEET MAIN PRODUCTS CHARACTERISTICS 2 x 15A IF AV 1 VRRM 600V 2 3 trr (typ) 35ns VF (max) 1.6V FEATURES AND BENEFITS SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS: Freewheel or Booster Diode.


    Original     		PDF STTA3006CW DIODE P1 P4 transistor STTA3006CW diode tURBOSWITCH morocco p3 transistor TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE

    STTB206S

    Abstract: marking t61
    Text: STTB206S  TURBOSWITCH  ”B”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATASHEET MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 600V trr (typ) 45ns VF (max) 1.3V A K FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS : SNUBBING OR CLAMPING, DEMAGNETIZATION


    Original     		PDF STTB206S STTB206S marking t61

    SMD 8A TRANSISTOR

    Abstract: Diode SMD ED 8A transistor SMD 8A TRANSISTOR 935 SMD smd transistor 8A fast recovery diode 1200v SMD smd transistor ed STTA812G
    Text: STTA812G  TURBOSWITCHTM ”A” ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINAY DATASHEET MAIN PRODUCT CHARACTERISTICS IF AV 8A VRRM 1200V trr (typ) 50ns VF (max) 2.0V A K K FEATURES AND BENEFITS ULTRA-FAST, AND NOISE-FREE RECOVERY. VERY LOW OVERALL POWER LOSSES IN


    Original     		PDF STTA812G SMD 8A TRANSISTOR Diode SMD ED 8A transistor SMD 8A TRANSISTOR 935 SMD smd transistor 8A fast recovery diode 1200v SMD smd transistor ed STTA812G

    sod6

    Abstract: sod6 package transistor p2 marking MARKING P1 TRANSISTOR STTA106U marking t01 transistor marking p3 1B marking transistor transistor P1 F ed1b
    Text: STTA106U  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATASHEET MAIN PRODUCTS CHARACTERISTICS IF AV 1A VRRM 600V trr (typ) 20ns VF (max) 1.5V A K FEATURES AND BENEFITS SPECIFIC TO ”FREEWHEEL MODE” OPERA -TIONS : FREEWHEEL OR BOOSTERDIODE


    Original     		PDF STTA106U sod6 sod6 package transistor p2 marking MARKING P1 TRANSISTOR STTA106U marking t01 transistor marking p3 1B marking transistor transistor P1 F ed1b

    DI 380 Transistor

    Abstract: SOD15 transistor marking p3 STTA206S diode 400v 2A ultrafast marking t51 transistor p2 marking
    Text: STTA206S  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATASHEET MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 600V trr (typ) 20ns VF (max) 1.5V A K FEATURES AND BENEFITS SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS : FREEWHEEL OR BOOSTER DIODE


    Original     		PDF STTA206S DI 380 Transistor SOD15 transistor marking p3 STTA206S diode 400v 2A ultrafast marking t51 transistor p2 marking

    15A POWER TRANSISTOR FOR SMPS

    Abstract: STTA1512P STTA1512PI IGBT trr
    Text: STTA1512P/PI  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATA MAIN PRODUCTS CHARACTERISTICS 15A VRRM 1200V trr typ 55ns VF (max) 1.9V K A IF(AV) FEATURES AND BENEFITS A A ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. VERY LOW OVERALL POWER LOSSES IN


    Original     		PDF STTA1512P/PI STTA1512P STTA1512PI 15A POWER TRANSISTOR FOR SMPS STTA1512P STTA1512PI IGBT trr

    schematic inductive proximity sensor

    Abstract: proximity switch schematic proximity switch block diagram inductive proximity sensor transistor schematic schematic inductive sensor AN2679 BES070815 military Proximity Sensor B65933A0000X022 inductive proximity sensor schematic
    Text: AN2679 Application note Smart inductive proximity switch Introduction The STEVAL-IFS006V1 inductive proximity switch demonstration board is designed based on the principle of metal body detection using the eddy current effect on the HF losses of a coil. It consists of a single transistor HF oscillator, an ST7LITEUS5 microcontroller and the


    Original     		PDF AN2679 STEVAL-IFS006V1 TDE1708DFT schematic inductive proximity sensor proximity switch schematic proximity switch block diagram inductive proximity sensor transistor schematic schematic inductive sensor AN2679 BES070815 military Proximity Sensor B65933A0000X022 inductive proximity sensor schematic

    TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE

    Abstract: transistor C 2240
    Text: STTA5012T V 1/2  TURBOS WITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATA MAIN PRODUCTS CHARACTERISTICS IF(AV) 25A VRRM 1200V trr (typ) 65ns VF (max) 1.85V K2 A2 A2 K1 K1 A1 K2 A1 STTA5012T(V)1 STTA5012T(V)2 FEATURES AND BENEFITS ULTRA-FAST, SOFT AND NOISE-FREE


    Original     		PDF STTA5012T TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE transistor C 2240

    RECTIFIER DIODE 5A, 2000V VRRM

    Abstract: STTA512D 2000V 0,25A Ultrafast RECOVERY Diode ISOWATT220AC STTA512F 102c marking IGBT 2000V .50A
    Text: STTA512D/F  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATA IF AV 5A VRRM 1200V trr (typ) 45ns VF (max) 2.0V K A MAIN PRODUCTS CHARACTERISTICS FEATURES AND BENEFITS A A ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. VERY LOW OVERALL POWER LOSSES IN


    Original     		PDF STTA512D/F O220AC ISOWATT220AC STTA512D STTA512F RECTIFIER DIODE 5A, 2000V VRRM STTA512D 2000V 0,25A Ultrafast RECOVERY Diode ISOWATT220AC STTA512F 102c marking IGBT 2000V .50A

    STTA812DI

    Abstract: tb 411 STTA812D high power fast recovery diodes 5 ns
    Text: STTA812D I  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATA IF(AV) 8A VRRM 1200V trr (typ) 50ns VF (max) 2.0V K A MAIN PRODUCTS CHARACTERISTICS FEATURES AND BENEFITS A A ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. VERY LOW OVERALL POWER LOSSES IN


    Original     		PDF STTA812D O220AC STTA812D STTA812DI STTA812DI tb 411 high power fast recovery diodes 5 ns

    Diode SGS-Thomson

    Abstract: SGS-Thomson mosfet TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE
    Text: r z T SGS-THOMSON ^7# K TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f a v 12A V rrm 1200V trr (typ) ns Vf (max) PRELIMINARY DATA V FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. . VERY LOW OVERALL POWER LOSSES IN


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    mosfet 1200V 25A

    Abstract: No abstract text available
    Text: r z T SGS-THOMSON ^ 7 # K TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f av 25A V rrm 1200V trr (typ) 60ns Vf PRELIMINARY DATA 1.9V (max) FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. . VERY LOW OVERALL POWER LOSSES IN


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    STTA106U

    Abstract: No abstract text available
    Text: rZ Z SCS-THOMSON ^ 7# liainieiataigHEC T ia M n o STTA 106U TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS If<av 1A V rrm 600V trr typ) 20ns V f (max) 1.5V PRELIMINARY DATASHEET FEATURES AND BENEFITS • SPECIFIC TO ’’FREEWHEEL MODE" OPERA


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    Untitled

    Abstract: No abstract text available
    Text: STTA 1212D TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f a v 12A V rrm 1200V trr (typ) 50 ns Vf 2.0 V (max) FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. ■ VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION


    OCR Scan     		PDF 1212D

    ST DIODE T03

    Abstract: STTA112U
    Text: STTA112U TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 1A V rrm 1200V tir Vf (typ) 65ns (max) 1.5V FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGNETIZATION AND RECTIFICATION


    OCR Scan     		PDF STTA112U ST DIODE T03 STTA112U

    Untitled

    Abstract: No abstract text available
    Text: STTA2512P TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f a v 25A V rrm 1200V trr (typ) 60ns Vf 1.9V (max) FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. ■ VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION


    OCR Scan     		PDF STTA2512P

    mosfet morocco

    Abstract: ad 152 transistor
    Text: f Z T SGS-THOMSON ^ 7# M C ^ < m iO T s M K S T T A 8 1 2 D (I TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS If(av) 8A V rrm 1200V trr (typ) 50ns Vf (max) 2.0V PRELIMINARY DATA kH 4 - V FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE


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    smd transistor 2p data

    Abstract: diode 500A 1200v smd transistor JJ
    Text: rz T ^7# SGS-THOMSON M »iLiOT(s iOOS TURBOSWITCH ”A” STTA812G ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f (a v ) 8A V rrm 1200V (typ) 50ns (max) 2.0V trr Vf PRELIMINAY DATASHEET a -H -k FEATURES AND BENEFITS • ULTRA-FAST, AND NOISE-FREE RECOVERY.


    OCR Scan     		PDF STTA812G smd transistor 2p data diode 500A 1200v smd transistor JJ

    Untitled

    Abstract: No abstract text available
    Text: STTA5012TV1/2 TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 25A I f a v V 1200V rrm 60ns trr (typ) V f STTA5012TV1 STTA5012TV2 1.9V (max) FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. ■ VERY LOW OVERALL POWER LOSSES IN


    OCR Scan     		PDF STTA5012TV1/2 STTA5012TV1 STTA5012TV2

    Untitled

    Abstract: No abstract text available
    Text: rz ^ T SGS-THOMSON 7# M ûœ ËŒ O T «® S T T A 1 5 1 2 P/PI TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 15A V rrm 1200V trr (typ) 55ns Vf (max) PRELIMINARY DATA V 1.9V FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE


    OCR Scan     		PDF STTA1512P STTA1512PI