morocco B80NE03L
Abstract: STB80NE03L-06 st microelectronics MOSFET automotive B80NE03L
Text: STB80NE03L-06 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET T YPE V DSS R DS o n ID ST B80NE03L-06 30 V < 0.006 Ω 80 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.005 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC
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morocco B80NE03L
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st microelectronics MOSFET automotive
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B80NE0
Abstract: B80NE03L b80ne B80NE03L-06 STB80NE03L-06 morocco B80NE03L
Text: STB80NE03L-06 N - CHANNEL 30V - 0.005Ω - 80A - D2PAK STripFET POWER MOSFET T YPE V DSS R DS o n ID ST B80NE03L-06 30 V < 0.006 Ω 80 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.005 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC
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B80NE03L
Abstract: JESD97 STB80NE03L-06 b80ne
Text: STB80NE03L-06 N-channel 30V - 0.005Ω - 85A - D2PAK STripFET Power MOSFET General features Type VDSS RDS on ID STB80NE03L-06 30V <0.006Ω 80A • Exceptional dv/dt capability ■ Low gate charge 100°C ■ 100% Avalanche tested 3 1 D2PAK Description
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p011p
Abstract: STMicroelectronics marking D2PAK obsolete B80NE03L JESD97 STB80NE03L-06
Text: STB80NE03L-06 N-channel 30V - 0.005Ω - 85A - D2PAK STripFET Power MOSFET General features Type VDSS RDS on ID STB80NE03L-06 30V <0.006Ω 80A • Exceptional dv/dt capability ■ Low gate charge 100°C ■ 100% Avalanche tested 3 1 D2PAK Description
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STMicroelectronics marking D2PAK obsolete
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Abstract: No abstract text available
Text: STB80NE03L-06 N-channel 30V - 0.005Ω - 85A - D2PAK STripFET Power MOSFET General features Type VDSS RDS on ID ) s ( t c u d o ) r s Description ( P t c e t u e d l o o r s P b Internal schematic diagram e O t e l ) o s ( s t b c u O d Applications o
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