Diode Motorola 711 2N2905A
Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
MV2103
Diode Motorola 711 2N2905A
pin configuration transistor BC547 2N2222
BC237
2N555
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IEC-801-2 ESD
Abstract: MONOLITHIC DIODE ARRAYS tvs-diode TVS RS422 TVS diode line voltage Application Note
Text: Ei8LC05 thru Ei8LC15 Low Capacitance, Bidirectional, Monolithic TVS Diode Network independent for multiple I/O port protection. These monolithic diode array networks can be used to protect combinations of 8 unidirectional or bi-directional lines. They provide ESD and
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Ei8LC05
Ei8LC15
Ei8LC12CX
Ei8LC15CX
com/PRESS/PR012601
IEC-801-2 ESD
MONOLITHIC DIODE ARRAYS
tvs-diode
TVS RS422
TVS diode line voltage Application Note
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MMAD1109
Abstract: MMAD130 MMAD1103 MMAD1105 MMAD1107
Text: MOTOROLA Order this document by MMAD130/D SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MMAD130/D
MMAD130/D
MMAD1109
MMAD130
MMAD1103
MMAD1105
MMAD1107
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1N6510 JAN
Abstract: 1N6510 LINFINITY linfinity 1N6100 1N6101 1N6510 1N6511 SG6100 SG6101 SG6511
Text: SG6100/SG6511 SG6101/SG6510 DIODE ARRAY CIRCUITS DESCRIPTION FEATURES The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has
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SG6100/SG6511
SG6101/SG6510
SG6100/SG6511
SG6101/SG6510
1N6100)
14-PIN
SG6101J
1N6101)
1N6510 JAN
1N6510 LINFINITY
linfinity
1N6100
1N6101
1N6510
1N6511
SG6100
SG6101
SG6511
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array networks
Abstract: No abstract text available
Text: Ei8LCXXX Monolithic Low Capacitance TVS Diode Network independent for multiple I/O port protection. These monolithic diode array networks can be used to protect combinations of 8 unidirectional or bi-directional lines. They provide ESD and surge protection for sensitive power and I/O
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Ei8LC05CX
Ei8LC08CX
Ei8LC12CX
Ei8LC15CX
array networks
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MAD130P
Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MMAD1108
De218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MAD130P
2N1711 solid state
BC237
MARKING CODE diode sod123 t3
H3T-B
MPS4258
bf244
MSA1022
Bf391
BCY72
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Untitled
Abstract: No abstract text available
Text: UC1610 UC2610 UC3610 Dual Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array • Exceptional Efficiency This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection
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UC1610
UC2610
UC3610
UC3610DW
UC3610DWTR
UC3610N
UC3610Q
UC3610QTR
SSYA008
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Untitled
Abstract: No abstract text available
Text: 1N5768 Monolithic Air Isolated Diode Array SCOTTSDALE DIVISION APPEARANCE 10-PIN Ceramic Flat Pack WWW . Microsemi .C OM DESCRIPTION These low capacitance diode arrays with common cathode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as
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1N5768
10-PIN
1N5770
1N5768
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Untitled
Abstract: No abstract text available
Text: 1N5770 Monolithic Air Isolated Diode Array SCOTTSDALE DIVISION APPEARANCE 10-PIN Ceramic Flat Pack WWW . Microsemi .C OM DESCRIPTION These low capacitance diode arrays with common anode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as
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1N5770
10-PIN
1N5768
1N5768
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Untitled
Abstract: No abstract text available
Text: 1N5770 Monolithic Air Isolated Diode Array SCOTTSDALE DIVISION APPEARANCE 10-PIN Ceramic Flat Pack WWW . Microsemi .C OM DESCRIPTION These low capacitance diode arrays with common anode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as
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1N5770
10-PIN
1N5768
1N5768
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Untitled
Abstract: No abstract text available
Text: 1N5768 Monolithic Air Isolated Diode Array SCOTTSDALE DIVISION APPEARANCE 10-PIN Ceramic Flat Pack WWW . Microsemi .C OM DESCRIPTION These low capacitance diode arrays with common cathode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as
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1N5768
10-PIN
1N5770
1N5768
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Untitled
Abstract: No abstract text available
Text: TH-C1840-P / TH-C1840-R n ACTIVELY COOLED 40W CW LINEAR BAR ARRAY DESCRIPTION The TH-C1840-P and TH-C1840-R(n) products are based upon highly performing 40W CW Laser Diode Bar Arrays. The Laser Diode structure is multiple emitters spaced on a monolithic 1cm
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TH-C1840-P
TH-C1840-R
8021-ed2
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diode 8008
Abstract: TH-C1725-P TH1725
Text: TH-C1725-S &TH-1725-P / TH-C1730-S &TH-C1730-P 25W / 30W CW LINEAR BAR ARRAY DESCRIPTION The TH-C1xx-S or P products are highly performing 25W CW and 30W CW Laser Diode Bar Arrays. The Laser Diode structure is multiple emitters spaced on a monolithic 1cm
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TH-C1725-S
TH-1725-P
TH-C1730-S
TH-C1730-P
79ver
8008-ed3
diode 8008
TH-C1725-P
TH1725
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THOMSON-CSF Power Laser diode
Abstract: TH-C1730-S
Text: TH-C1725-S / TH-C1730-S CONDUCTIVELY COOLED 25W / 30W CW LINEAR BAR ARRAY DESCRIPTION The TH-C17XX-P products are highly performing 25W CW and 30W CW Laser Diode Bar Arrays. The Laser Diode structure is multiple emitters spaced on a monolithic 1cm "bar".The bar is mounted with the active zone
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TH-C1725-S
TH-C1730-S
TH-C17XX-P
860nm
TH-C1730-S
THOMSON-CSF Power Laser diode
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Untitled
Abstract: No abstract text available
Text: 1N6507 Monolithic Air Isolated Diode Array SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays with common anode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing
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1N6507
10-PIN
1N6506
1N6507
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silicon general 16 pin ceramic dip J
Abstract: No abstract text available
Text: SG6100/SG6101 SILICON ADVANCED DATA SHEET GENERAL DIODE ARRAY CIRCUITS LINEAR INTEGRATED CIRCUITS DESCRIPTION FEATURES The SG6100 and SG6101 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100 is configured with 7 straight
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SG6100/SG6101
100mA
SG6100
SG6101
16-PIN
SG6101J
14-PIN
SG6100F
silicon general 16 pin ceramic dip J
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MMAD1107
Abstract: mmad1103 MMAD1105 MMAD1109 Ad1103
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-sw itching core-driver applications. These arrays offer many of the advantages of integrated
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MMAD130
MAD1105
MMAD1107
mmad1103
MMAD1105
MMAD1109
Ad1103
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MMAD1108
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8-Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-switching
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MMAD1108
MMAD1108
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CVD-450
Abstract: Laser Diode 808 nm
Text: LASER DIODE INC 1SE D I Sl&EI&B DODDMSl 5 I T -fh O f C VD-400 SERIES LASER DIODE, INC. QUASI CW LASER DIODE ARRAYS FEATURES: ► ► ► ► ► ► ► DESCRIPTION: The CVD-400 series lasers are Gallium Aluminum Arse nide Monolithic Quantum Well Arrays made by MOCVD
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VD-400
CVD-400
CVD-450
Laser Diode 808 nm
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SG6101J
Abstract: sg6101
Text: IlSFMTY SG6100/SG6511 SG6101/SG6510 M I C R O E L E C T R O N I C S DIODE ARRAY CIRCUITS FEATURES DESCRIPTION The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has
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SG6100/SG6511
SG6101/SG6510
16-PIN
SG6101J
1N6101)
14-PIN
SG6101J
sg6101
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Untitled
Abstract: No abstract text available
Text: CA3141 HARRIS SEMICONDUCTOR High-Voltage Diode Array For Commercial, Industrial & Military Applications March1993 Features Description • Matched Monolithic Construction - VF for Each Diode Pair Matched to Within 0.55mV Typ at lF - 1mA The CA3141E High Voltage Diode Array Consists of ten gen
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CA3141
CA3141E
CA3141
h1993
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Untitled
Abstract: No abstract text available
Text: TH-C1840-PI TH-C1840-R n ACTIVELY COOLED 40W CW LINEAR BAR ARRAY DESCRIPTION The TH-C1840-P and TH-C1840-R(n) products are based upon highly performing 40W CW Laser Diode Bar Arrays. The Laser Diode structure is multiple emitters spaced on a monolithic 1cm
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TH-C1840-PI
TH-C1840-R
TH-C1840-P
8021-ed2
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FSA2619P
Abstract: FSA2510M FSA2719M FSA2510P FSA2620M FSA2619M FSA2510 FSA2719P MONOLITHIC DIODE ARRAYS FSA2619M FSA2566P
Text: Diode Data NATL SEMICOND DISCRETE H E I D bSO liaO 0037007 Ô | T-43-2 4 Monolithic Diode Arrays Plastic - Ceramic - Metal Packages Device No. Package No. Configuration V rhm V Min FSA2510M TO-116-2 M16S 60 FSA2510P M 16S TO-116 *rr ns Max Test Cond. Proci
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0a37G07
T-43-2
FSA2510M
O-116-2
FSA2509
FSA2510P
O-116
FSA2563M
FSA2619P
FSA2719M
FSA2620M
FSA2619M
FSA2510
FSA2719P
MONOLITHIC DIODE ARRAYS FSA2619M
FSA2566P
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TH-C1725-R
Abstract: No abstract text available
Text: TH-C1725-R n I TH-C1730-R(n) ACTIVELY COOLED 25W / 30W CW LINEAR BAR ARRAYS DESCRIPTION The TH-C17XX-R(n) products are based upon highly performing 25W CW and 30W CW Laser Diode Bar Arrays. The Laser Diode structure is multiple emitters spaced on a monolithic 1cm
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TH-C1725-R
TH-C1730-R
TH-C17XX-R
TH-C1725-R7
TH-C1730-R7
8007-ed2
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