MODEL Q2SD1858 NPN Search Results

MODEL Q2SD1858 NPN Result Highlights (4)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
MX0912B251Y	Rochester Electronics LLC	MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die)
CA3083Z-G	Rochester Electronics LLC	CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY
CA3046	Rochester Electronics LLC	RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN

MODEL Q2SD1858 NPN Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
9578 Abstract: MODEL Q2SD1858 NPN 2SD1858 model Q2SD1858 2SD1858 TR 104 Text: SPICE PARAMETER 2SD1858 by ROHM TR Div. * Q2SD1858 NPN BJT model * Date: 2006/11/15 .MODEL Q2SD1858 NPN + IS=82.625E-15 + BF=169.40 + VAF=100 + IKF=9.9578 + ISE=82.625E-15 + NE=1.3933 + BR=12.165 + VAR=100 + IKR=14.121 + ISC=202.30E-15 + NC=2.6727 + RE=.1	Original	PDF	2SD1858 Q2SD1858 625E-15 30E-15 28E-12 576E-12 55E-12 801E-9 9578 MODEL Q2SD1858 NPN 2SD1858 model 2SD1858 TR 104

Catalog Datasheet

MFG & Type

PDF

Document Tags

9578

Abstract: MODEL Q2SD1858 NPN 2SD1858 model Q2SD1858 2SD1858 TR 104
Text: SPICE PARAMETER 2SD1858 by ROHM TR Div. * Q2SD1858 NPN BJT model * Date: 2006/11/15 .MODEL Q2SD1858 NPN + IS=82.625E-15 + BF=169.40 + VAF=100 + IKF=9.9578 + ISE=82.625E-15 + NE=1.3933 + BR=12.165 + VAR=100 + IKR=14.121 + ISC=202.30E-15 + NC=2.6727 + RE=.1

Original

PDF

2SD1858 Q2SD1858 625E-15 30E-15 28E-12 576E-12 55E-12 801E-9 9578 MODEL Q2SD1858 NPN 2SD1858 model 2SD1858 TR 104