Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOD 4 COUNTER Search Results

    MOD 4 COUNTER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74F779PC Rochester Electronics LLC 74F779 - Binary Counter Visit Rochester Electronics LLC Buy
    54191J/B Rochester Electronics LLC 54191 - Decade Counter Visit Rochester Electronics LLC Buy
    74AC11191DW Rochester Electronics LLC 74AC11191 - Binary Counter Visit Rochester Electronics LLC Buy
    MM74C925N Rochester Electronics LLC 74C925 - Display Driver Counter Visit Rochester Electronics LLC Buy
    9305DM/B Rochester Electronics LLC 9305 - Counter Visit Rochester Electronics LLC Buy

    MOD 4 COUNTER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RF antenna 433.92

    Abstract: 433.92 wire antenna
    Text: Totem Line flH R EL,. Via Foro dei Tigli, 4 • Phone : +39-0546941124 • Fax : +39-0546941660 • 1 47015 Modigliana FO Italy • http://www.aurel.it • E-mail: aurel@aurel.it Rubber flexible antenna • Antenna flessibile in gomma mod. mod. T T-A Flexible omnidirectional antenna suitable for 433.92 Mhz


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSEL-VITELIC V404J32and V404J36 1M x32and 1M x36 CMOS MEMORY MODULES PRELIMINARY Features Description • ■ ■ ■ ■ ■ The V404J32 memory Module is organized as 1,048,576 x 32 bits in a 72-lead single-in-line mod­ ule. The 1M x 32 memory module uses 8 MoselVitelic 1M x 4 DRAMs. The V404J36 Memory Mod­


    OCR Scan     		V404J32and V404J36 x32and 72-lead V404J32 77777F77\i V404J32/36 PDF

    DH311

    Abstract: No abstract text available
    Text: M OSEL v m u c PRELIMINARY V404J32 and V404J36 1M x 32 and 1M x 36 CMOS MEMORY MODULES Features Description u • ■ ■ ■ ■ The V404J32 memory Module is organized as 1,048,576 x 32 bits in a 72-lead single-in-line mod­ ule. The 1M x 32 memory module uses 8 MoselVitelic 1M x 4 DRAMs. The V404J36 Memory Mod­


    OCR Scan     		V404J32 V404J36 72-lead V404J32/36 DH311 PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM0164405B IBM0164405P 16M x 4 13/11 EDO DRAM Features • 16,777,216 word by 4 bit organization Read-Mod ify-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out CAS before RAS Refresh - 4096 cycles/Retention Time RAS Access Time


    OCR Scan     		IBM0164405B IBM0164405P 256ms 104ns 360mW 0j-32 PDF

    sweep

    Abstract: 1 hz pulse generator El 3023
    Text: Data Sheet 4 MHz Sweep Function Generators Models 4001A & 4003A 4001A 4003A Mod el Models 4001A and 4003A are 4 MHz sweep function generators. The sweep function offers linear or log sweep with variable sweep rates and widths. The model 4003A has the addition of a 20 MHz


    Original     		15V/230 v032812 sweep 1 hz pulse generator El 3023 PDF

    HM50464P-15

    Abstract: 50464P-12 50464CP-12 50464cp 50464P HM504 50464
    Text: H M 5 0 4 6 4 S e rie s 65536-word x 4-bit Dynamic Random Access Memory • FEATURES • Page mod« capability • Single 5V ±10% HM 50464P Series • On chip substrate bias generator • Low power: 350 mW active, 20 mW standby • High speed: Access Time 120ns/150ns/200ns


    OCR Scan     		50464P 65536-word 120ns/150ns/200ns DP-18B) 50464C 50464P-12 HM50464P-15 50464CP-12 HM50464CP-15 50464CP-20 50464cp HM504 50464 PDF

    Untitled

    Abstract: No abstract text available
    Text: MEMORY MB814405D-60/60L/-70/70L CMOS 1,048,576 x 4 BITS Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB814405D is a fully decoded CMOS Dynamic RAM DRAM}-that-contacts 4,194,304 memory cells accessible in 4-bit increments. The MB814405D features the “hyper page’ ' mod of operation which provides


    OCR Scan     		MB814405D-60/60L/-70/70L MB814405D PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM0165405B IBM0165405P 16M x 4 12/12 EDO DRAM Features • 16,777,216 word by 4 bit organization Read-Mod ify-Write • Single 3.3 ± 0.3V power supply Performance: -50 -60 I rac RAS Access Tim e 50 ns 60ns tcAC GAS Access Tim e 13ns 15ns •*AA ; Colum n Address Access Tim e


    OCR Scan     		IBM0165405B IBM0165405P 256ms 400jiA) 104ns 504mW SOJ-32 PDF

    Untitled

    Abstract: No abstract text available
    Text: MEMORY 4 M X 4 BIT FAST PAGg MOD E DYNAMIC RAM M 7400A-60/-70/-60L/" CMOS 4,194,304 x 4 Bit Fast Page Mode Dynamic RAM DESCRIPTION The Fujitsu MB81V17400A is a fully decoded CMOS Dynamic RAM DRAM t e t contains 16,777,216 memory cells accessible in 4-bit increments. The MB81V17400A features a “fast page” m od^of operation whereby high­


    OCR Scan     		400A-60/-70/-60L/" MB81V17400A F9708 PDF

    cas200

    Abstract: No abstract text available
    Text: Stgnsttes DoeunwntNo. ass- SON No. O w eriM ua Ju n *4 , ISSO Statt» Produci Spedllceben FAST 74F1766 Burst Mode DRAM Controller BMDC FAST Praduca TYPE FEATURES • Allows burat*moda acoaaa for aystsms using Nlbbla/Paga/Statle column mod* DRAMa • Complata oontrol of DRAM accost,


    OCR Scan     		74F1766 150MHz 200mA 74F176S cas200 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 Mega Byte DRAM MODULE KMM5361003C/CG Fast Page Moa» 1Mx36 Quad CAS DRAM SIMM Using Quad CAS DRAM, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5361003C is a 1M bit x 36 Dynamic RAM high density memory mod' e using Parity with 4M Quad CAS DRAM. The Samsung


    OCR Scan     		KMM5361003C/CG 1Mx36 KMM5361003C 20-pin 24-pin 72-pin KMW5361003C KMM5361003C PDF

    KMM5361003C6

    Abstract: TAA 780 kmm5361003
    Text: DRAM MODULE / _ 4 Mega Byte KMM5361003C/CG Fast Page Mode / 1Mx36 Quad CAS DRAM SIMM Using Quad CAS DRAM, 5V G EN ERA L D ESCRIPTIO N FEATURES The Samsung KMM5361003C is a 1M bit x 36 Dynamic RAM high density memory mod' e using Parity with 4M Quad CAS DRAM. The Samsung


    OCR Scan     		KMM5361003C/CG 1Mx36 KMM5361003C 20-pin 24-pin 72-pin KMM5361U03C KMM5361003C6 TAA 780 kmm5361003 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSEL VITELIC PRELIMINARY V408J32 1M X 32 HIGH PERFORMANCE EDO MEMORY MODULE Features Description • ■ The V408J32 memory Module is organized as 1,097,152 x 32 bits in a 72-lead single-in-line mod­ ule. The 1M x 32 memory module uses 8 MoselVitelic 1M x 4 DRAMs. The x32 modules are ideal


    OCR Scan     		V408J32 72-lead PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSEL VITELIC PRELIMINARY V408J32 1M x 32 HIGH PERFORMANCE EDO MEMORY MODULE Features Description • ■ The V 408J32 memory Module is organized as 1,097,152 x 32 bits in a 72-lead single-in-line mod­ ule. The 1M x 32 memory module uses 8 MoselVitelic 1M x 4 DRAMs. The x32 modules are ideal


    OCR Scan     		V408J32 72-lead 408J32 b353311 V408J32 PDF

    KM41C1000

    Abstract: KMM591000
    Text: SAMSUNG K M M 4 9 1 0 0 0 /K M M 5 9 1 0 0 0 □ - • - 1M x 9 DRAM SIP and SIMM Memory Modules GENERAL DESCRIPTION FEATURES The Samsung KMM491000 and KMM591000 are 1M x 9 dynamic RAM high density memory mod­ ules. The ninth bit is generally used for parity and


    OCR Scan     		KMM491000 KMM591000 KM41C1000 20-pin R0286 PDF

    KM41C1000

    Abstract: 30-pin simm memory KMM591000 30-pin simm memory dynamic IRP 745 km41c SIMM 30-pin KMM491000-10 KMM591000-10 KMM491000-12
    Text: S AM SUN G K M M 4 9 1 0 0 0 /K M M 5 9 1 0 0 0 □ " W Semiconductor 1M x 9 DRAM SIP and SIMM Memory Modules GENERAL DESCRIPTION FEATURES The Samsung KMM491000 and KMM591000 are 1M x 9 dynamic RAM high density memory mod­ ules. The ninth bit is generally used for parity and


    OCR Scan     		KMM491000/KMM591000 KMM491000 KMM591000 KM41C1000 20-pin 22/i/F R0286 30-pin simm memory 30-pin simm memory dynamic IRP 745 km41c SIMM 30-pin KMM491000-10 KMM591000-10 KMM491000-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSEL- VITELIC V404J232 and V404J236 2M X 32 and 2M X 36 CMOS MEMORY MODULES PRELIMINARY Features Description • ■ ■ ■ ■ ■ The V404J232 memory Module is organized as 2,097,152 x 32 bits in a 72-lead single-in-line mod­ ule. The 2M x 32 memory module uses 16 MoselVitelic 1M x 4 DRAMs. The V404J236 Memory


    OCR Scan     		V404J232 V404J236 72-lead 72lead V404J232/236 PDF

    Untitled

    Abstract: No abstract text available
    Text: M O S E L VITELIC PRELIMINARY V408J232 2M x 32 HIGH PERFORMANCE EDO MEMORY MODULE Features Description • ■ The V 408J232 memory Module is organized as 2,097,152 x 32 bits in a 72-lead single-in-line mod­ ule. The 2M x 32 memory module uses 16 MoselVitelic 1M x 4 DRAMs. The x32 modules are Ideal


    OCR Scan     		V408J232 72-lead 408J232 PDF

    hyundai tv hy 22 f circuit

    Abstract: c 144 ESS HYM5C9256
    Text: HYUNDAI ELECTRONICS 3TE D • >4b7SGñó G D G Ü 3 S Ö 4 ■ HYNK 256K*9-Bit CMOS DRAM MODÍIfc&’ M421202A-APR91 DESCRIPTION The HYM5C9256 is a 256K words by 9 bits dynamic RAM m odule and consists o f nine HY53C256LF Fast Page mode CM OS DRAM s in 18 pin PLCC package mounted on a 30 pin


    OCR Scan     		M421202A-APR91 HYM5C9256 HY53C256LF 22jiF HYM5C9256M HYM5C9256P HYM5C9256-70 HYM5C9256-80 HYM5C9256-10 HYM5C9256-12 hyundai tv hy 22 f circuit c 144 ESS PDF

    Untitled

    Abstract: No abstract text available
    Text: m m m m fa a a a a a a m — i ^ — H V P F R P A G F M O D F D Y N A M IC R A M CMOS 4,194,304 x 4 BIT Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB8117405A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The M B8117405A features a “hyper page” mod«:.of operation whereby high­


    OCR Scan     		MB8117405A B8117405A 024-bits F9703 PDF

    Untitled

    Abstract: No abstract text available
    Text: M O S E L V IT E U C P R E LIM IN A R Y V1780J32 2 M x 32 E D O M E M O R Y M O D U LE Features Description m 2,097,152 x 32 bit organization The V1708J32 memory module is organized as 2,097,152 x 32 bits in a 72-lead single-in-line mod­ ule. The 2M x 32 memory module uses 4 MoselVitelic 1M x 16 DRAMs. The x32 modules are ideal


    OCR Scan     		V1780J32 72-lead cycles/16ms V1708J32 00037bl V1780J32 b3S3311 QQD37b2 PDF

    APPLICATIONS OF mod 8 COUNTER

    Abstract: mod 13 counter mod 10 counter mod 8 counter
    Text: CSCUbler You may count on Combination Time and Pulse Meter General Description The combination counter consists of a running time meter and an adding coun­ ter. In the standard version, these two meters are connected in parallel, this means that the adding counter registers


    OCR Scan     		PDF

    AM FM RDS TUNER module

    Abstract: AM FM TUNER module car AM FM TUNER module
    Text: KEC t u n e r m o d u le TECH N ICA L DA TA KOREA ELECTRO N ICS CO.,LTD. ELECTRONIC AM /FM /M PX TUNER. FE A T U R ES • Super Compact 1 Pack FM+AM MW/LW Tuner. • Ideal for Car Stereo and Car CD System. • Upper Side Band Super Heterodyne System. • SD/SM and IP Counter Terminal for DTS, RDS System Application.


    OCR Scan     		KCC1713V KCC1713 AM FM RDS TUNER module AM FM TUNER module car AM FM TUNER module PDF

    KCA333UA

    Abstract: AM FM TUNER module car 999KHZ AM FM TUNER module 144khz murata filter Z 459
    Text: K E C TUNER MODULE r• ~~w~-w~n. ~t ~~w~ A ~w T-v A KCA333UA/UH/EA/EH \ A AM TUNER C NC KOREA ELECTRONICS CO.,LTD. AM TUN ER FOR CAR AUDIO FE A T U R ES • Super Compact 3 -Gang AM MW/LW Electronic Tuner. • SD/SM Output Terminal and IF Counter Terminal for D TS System Application.


    OCR Scan     		KCA333UA/UH/EA/EH 520-1720kHz, 144kHz 281kHz. A333UA/UH/EA/EH KCA333U KCA333UA AM FM TUNER module car 999KHZ AM FM TUNER module murata filter Z 459 PDF