DIODE D 92 02 78.P
Abstract: PYQ+1748 tv 256 diode tv 256 R diode
Text: SKM 50GB123D . J3 L MN OD? * /299 .+:248'92 9 23'@'25 Absolute Maximum Ratings Symbol Conditions IGBT PDQ& JR L MN OD CD JR L TNU OD CDX$ TMUU P NU G J3092 L VU OD WU G TUU G Z MU P JR L TMN OD TU ^9 J3092 L MN OD NU G J3092 L VU OD WU G TUU G JR L TNU OD
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50GB123D
J3092
50GAL123D
J309ig.
DIODE D 92 02 78.P
PYQ+1748
tv 256 diode
tv 256 R diode
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Untitled
Abstract: No abstract text available
Text: SK75GARL065E B- L MN O$P 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT Q$RG BS L MN O$ C$ BS L WMN O$ C$ZJ UVV Q XV Y B- L XV O$ NN Y WXV Y [ MV Q BS L WMN O$ WV `- B- L MN O$ Na Y B- L XV O$ ¥X Y C$ZJL M : C$0%& *'-) Q$$ L ¥VV Q] QDR ^ MV Q]
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SK75GARL065E
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Abstract: No abstract text available
Text: SK50GH065F C- L MN O$P 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT K$QJ CR L MN O$ D$ CR L UMN O$ D$YZ *'-) STT K NV W C- L XT O$ VT W UTT W [ MT K CR L UMN O$ UT `- C- L MN O$ XM W C- L XT O$ NT W UMT W D$YZL M ; D$0%& K$$ L ¥TT K] KEQ ^ MT K]
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SK50GH065F
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c.i 7404
Abstract: No abstract text available
Text: SK55GARL065E B- L MN O$P 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT Q$RG BS L MN O$ C$ BS L WMN O$ C$[J UVV Q NX Y B- L ZV O$ XV Y WMV Y ¥ MV Q BS L WMN O$ WV a- B- L MN O$ ]U Y B- L ZV O$ MX Y C$[JL M : C$0%& *'-) Q$$ L ]VV Q^ QDR _ MV Q^
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SK55GARL065E
c.i 7404
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Abstract: No abstract text available
Text: SK 100 TAA HIGJ HIIJK H<IJ MNO CEE P H SEE CUEE H QEE CVEE ;N- O QE R$> GT CEE NPP EQ GT CEE NPP CV CWEE CDEE GT CEE NPP CD Characteristics Symbol Conditions SEMITOP 2 Two separated thyristors Values Units MN N- O CEER$ DX P MN N- O QER$ CEE P MNGJYMZGJ
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Untitled
Abstract: No abstract text available
Text: SK 35 TAA HIGJ HIIJK H<IJ MNO PQ R H UEE CPEE H SEE CWEE ;N- O SE T$> GVPQNRRES GVPQNRRCW CXEE CDEE GVPQNRRCD Characteristics Symbol Conditions SEMITOP 2 Two separated thyristors Values Units MN N- O CEET$ WP R MN N- O SET$ PQ R MNGJYMZGJ N@[ O WQ ;CWQ> T$¥ CE &-
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Abstract: No abstract text available
Text: SK 55 TAA HIGJ HIIJK H<IJ MNO PP Q H TEE CVEE H REE CWEE ;N- O RE S$> GUPPNQQER GUPPNQQCW CXEE CDEE GUPPNQQCD Characteristics Symbol Conditions SEMITOP 2 Two separated thyristors Values Units MN N- O CEES$ VD Q MN N- O RES$ PP Q MNGJYMZGJ N@[ O WP ;CWP> S$¥ CE &-
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Untitled
Abstract: No abstract text available
Text: SK 75 TAA HIGJ HIIJK H<IJ MNO PQ R H UEE CWEE H SEE CXEE ;N- O SE T$> GVPQNRRES GVPQNRRCX CPEE CDEE GVPQNRRCD Characteristics Symbol Conditions SEMITOP 2 Two separated thyristors Values Units MN N- O CEET$ YP R MN N- O SET$ PQ R MNGJZM[GJ N@¥ O XQ ;CXQ> T$] CE &-
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MNxx
Abstract: MN81 GWOY6039 GWOY6040 Q62702-P3555 Q62702-P5312 din 74 MN81-G
Text: Passively Cooled Diode Laser Bar SPL MNxx No Optics SPL MYxx Fast-Axis Collimation SP-pack. left , DL-pack. (right) Features Applications • Uncollimated (MN-series) or fast-axis collimated radiation (MY-series) • 1 cm-laser bar mounted on passive heat sink,
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GWOY6039
GWOY6040
MNxx
MN81
GWOY6039
GWOY6040
Q62702-P3555
Q62702-P5312
din 74
MN81-G
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din 74
Abstract: GWOY6039 GWOY6040 Q62702-P3555 Q62702-P5312 K1222
Text: Passively Cooled Diode Laser Bar SPL MNxx No Optics SPL MYxx Fast-Axis Collimation Preliminary Data SP-pack. left , DL-pack. (right) Features Applications • Uncollimated (MN-series) or fast-axis collimated radiation (MY-series) • 1 cm-laser bar mounted on passive heat sink,
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GWOY6039
GWOY6040
din 74
GWOY6039
GWOY6040
Q62702-P3555
Q62702-P5312
K1222
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din 74
Abstract: MN81G GWO06039 GWO06040 Q62702-P3555 Q62702-P5312
Text: Passively Cooled Diode Laser Bar SPL MNxx No Optics SPL MYxx Fast-Axis Collimation Preliminary Data SP-pack. left , DL-pack. (right) Features • Uncollimated (MN-series) or fast-axis collimated radiation (MY-series) • 1 cm-laser bar mounted on passive heat sink,
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GWO06039
GWO06040
din 74
MN81G
GWO06039
GWO06040
Q62702-P3555
Q62702-P5312
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Untitled
Abstract: No abstract text available
Text: Passively Cooled Diode Laser Bar SPL MNxx Only available in North America SP-pack. left , DL-pack. (right) Features Applications • Uncollimated (MN-series) • 1 cm-laser bar mounted on passive heat sink, no water required • Highly reliable strained layer InGa(Al)As/GaAs
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Untitled
Abstract: No abstract text available
Text: , laser diodes drawings Units in mn. FIG. 2 FIG. Units in mn. FIG. 4 FIG. 1-800-278-5666 www.lumex.com 11 ^ 1-800-944-2790 , LUàéi ÜL laser diodes drawings Units in mm. Units in mn. FIG. 6 Ball Lens Units in mm. FIG. 7 Flat Window s 1-800-278-5666 £§! www.lumex.com
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eltec
Abstract: No abstract text available
Text: ROHM Corporation representatives US and Canada Massachusetts (Connecticut, Maine, New Hampshire, Rhode Island, Vermont) Focus Sales, Inc., Taunton, MA (800) 933-2771 Minnesota (Iowa, North & South Dakota) Hopewell Associates, Lakeville, MN (612) 469-3222
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Untitled
Abstract: No abstract text available
Text: aJ*S^ I Ì ^ mn* l GaAs INFRARED EMITTING DIODE ^ U B OPTOELECTRONICS _CQX15, CQX17 |l«gOW iyilW |*] The CQX15/17 are 940nm LEDs in wide angle, TO-46 packages. II piumppi i I . .Ill mw I. ST1331 • Good optical to mechanical alignment SYMBOL
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CQX15,
CQX17
CQX15/17
940nm
ST1331
100rnA
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S0T426
Abstract: INCOMING QUALITY PLANNING FORMAT
Text: Philips Semiconductors PowerMOS transistors , ^ , . . . mn>- „ . Introduction including TOPFETs and IGBTs_ QUALITY Product conformance Total Quality Management The assurance of product conformance is an integral part of our quality assurance QA practice. This is achieved by:
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IS09000
CDF-AEC-Q100
-Q101
QS9000
S0T426
INCOMING QUALITY PLANNING FORMAT
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Untitled
Abstract: No abstract text available
Text: QUALITY TECHNOLOGIES AIGaAs Infrared Emitting Diode QEC123 DESCRIPTION The Q EC123 is a 880 mn AIGaAs LED encapsulated in a clear, purple tinted, plastic T-1 package. FEATURES •I 74bbß51 □ □D4fl fl cl 0 3 2 ■ Tight production Ee distribution with 3:1
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QEC123
EC123
December20,
74bbfl51
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Clairex Electronics
Abstract: CLD42 CLD41 CLD41BB CLD42BB
Text: 11E D CLAIREX ELECTRONICS DIV CLD41 Product Data CLD42 CLD41BB CLD42BB Silicon Planar Photovoltiac Diodes 3145711 000Q745 » •»Sot A. ±•010 •ti 6 I MN. II CATHOOE ANODE* GENERAL DESCRIPTIO N — The CLD Series of Photo diodes is specifically designed to optimize Photovoltaic
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000Q745
CLD41
CLD42
CLD41BB
CLD42BB
21427TT
GD74b
Clairex Electronics
CLD42BB
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Untitled
Abstract: No abstract text available
Text: High-Speed CMOS Logic MN74HC Series mn 74HC i o / mn 74HC ios MN74HC10/MN74HC10S T riple 3 -Input NAND G ates • Description M N 7 4 H C 1 0 /M N 7 4 H C 1 0 S c o n ta in th re e 3 -in p u t positiv e iso la tio n N A N D gate circu its. A d o p tio n o f a silico n gate C M O S p rocess has resulted in low
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MN74HC
MN74HC10/MN74HC10S
10-in
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h33 diode
Abstract: No abstract text available
Text: MIVR 42095 mn NEGATIVE HIGH TEMPERATURE REGULATOR Designed for use in high temperature environments FEATURES • Output current to 1.5 amps • Input voltage to -30V • Internal short circuit protection, foldbackand current limiting • StorageTemperature +250°C
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22-PIN
h33 diode
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Untitled
Abstract: No abstract text available
Text: 66139-XXX 4N50 mn- OPTICALLY COUPLED ISOLATOR OPTOELECTRONIC PRODUCTS DIVISION Features: Applications: • • • • • • • • • High Isolation High Transfer Ratio High Voltage Output Low Dissipation Isolated case Power supplies Transmitters Digital circuits
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66139-XXX
MIL-PRF19500
500VDC
100ii
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS30VS-3 HIGH-SPEED SWITCHING USE FS30VS-3 OUTLINE DRAWING Dimensions in mm 10.5MAX, 4.5 1.3 \ " t mn ? 3 S F Î 0.5 0.8 ^ 1 • i ; . 2, _ Q . !} GATE 2 DRAIN î SOURCE
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FS30VS-3
110ns
O-220S
1CH23
571Q-223
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN2D01FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H mN ? mnm r n i F 11 'm • ■ ULTRA HIGH SPEED 5WITCHING APPLICATION. Unit in mm HN2D01FU is composed of 3 independent diodes. TT Low Forward Voltage A A m T /m • Fast Reverse Recovery Time : trr = 1.6ns Typ.
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HN2D01FU
HN2D01FU
01//F
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YTF830
Abstract: Field Effect Transistor Silicon N Channel MOS vdss 600
Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOSH YTF830 HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-OC CONVERTER AND HOTOR Unit in mn DRIVE APPLICATIONS. 10.3MAX. ¿ 3 .6 * 0 . 2 -ë -f FEATURES:
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YTF830
00A/m
YTF830
Field Effect Transistor Silicon N Channel MOS vdss 600
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