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    Rochester Electronics LLC MMRF1306HR5

    RF MOSFET LDMOS 50V NI1230
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    DigiKey MMRF1306HR5 Bulk 30 2
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    NXP Semiconductors MMRF1306HR5

    RF MOSFET LDMOS 50V NI1230
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    Freescale Semiconductor MMRF1306HR5

    RF Power Field-Effect Transistor
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    Rochester Electronics MMRF1306HR5 30 1
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    MMRF1306HR5 Datasheets (1)

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    MMRF1306HR5 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, TRANS RF N-CH 1000W 50V NI-1230 Original PDF

    MMRF1306HR5 Datasheets Context Search

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    MMZ20363B

    Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
    Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1306H Rev. 1, 8/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR CW or pulse applications, such as HF, VHF, and low-band UHF radar and high power


    Original     		MMRF1306H MMRF1306HR5 MMRF1306HR5 MMRF1306HSR5 PDF

    Product Selector Guide

    Abstract: NI-400S-2S
    Text: RF Military Power LDMOS Transistors Freescale’s LDMOS technology is ideally suited for military applications such as battlefield communications, primary radar covering HF, VHF, UHF, L-Band, S-Band, and avionics such as IFF transponders , and electronic warfare jamming. The high


    Original     		MMRF2004NBR1ï MMRF2006NT1ï 1230S--4L2L NI--780GS--4L NI--880XGS--2L NI--1230H--4S NI--1230S--4S4S OM--780--2L OM--780G--2L OM--780--4L Product Selector Guide NI-400S-2S PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1306H Rev. 0, 12/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR CW or pulse applications, such as HF, VHF, and low-band UHF radar and high power


    Original     		MMRF1306H MMRF1306HR5 MMRF1306HSR5 MMRF1306HR5 PDF