IS-54
Abstract: SPDT FETs uPG13xG
Text: µPG13xG SERIES L-BAND SPDT SWITCH GaAs MMIC 1. OVERVIEW OF SERIES The µPG13xG Series is a collection of GaAs MMICs developed as SPDT Single-Pole, Double-Throw switches for digital mobile communications terminals on the L to S bands. These ICs can operate from 100 MHz to 2.5 GHz
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PG13xG
PG130G
PG131G
IS-54
SPDT FETs
uPG13xG
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BGA622L7
Abstract: Germanium Amplifier Germanium power
Text: Target Data, BGA622L7, July 2004 BGA622L7 Silicon Germanium Wide Band Low Noise Amplifier MMIC Secure Mobile Solutions Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2004-07-27 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München
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BGA622L7,
BGA622L7
D-81541
100nH
150pF
100nF
1575MHz
BGA622L7
Germanium Amplifier
Germanium power
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INFINEON package PART MARKING
Abstract: BGA622
Text: Preliminary data sheet, BGA622, Aug. 2002 BGA622 Silicon Germanium Wide Band Low Noise Amplifier MMIC Wireless Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2002-08-08 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München
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BGA622,
BGA622
D-81541
14GHz,
GPS05605
INFINEON package PART MARKING
BGA622
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BGA622L7
Abstract: INFINEON marking amplifier
Text: Data Sheet, Nov. 2004 BGA622L7 Silicon Germanium Wide Band Low Noise Amplifier MMIC Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2004-11-04 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany Infineon Technologies AG 2004
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BGA622L7
BGA622L7
INFINEON marking amplifier
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BGA430
Abstract: VPS05604
Text: P r e lim in a r y d a t a s h e e t , B G A 4 3 0 , M a y 2 0 0 2 y BG A4 3 0 li m in ar Broad Band High Gain LNA P re MMIC Wireless Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2002-05-03 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
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D-81541
BGA430
OT-363
EHA07193
BGA430
VPS05604
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Untitled
Abstract: No abstract text available
Text: P r e lim in a r y d a t a s h e e t , B G A 4 3 0 , Ja n u a r y 2 0 0 2 y BG A4 3 0 li m in ar Broad Band High Gain LNA P re MMIC Wireless Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2002-01-22 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
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D-81541
BGA430
100pF
BGA430
EHA07193
OT-363
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b6hf marking
Abstract: No abstract text available
Text: P r e lim in a r y d a t a s h e e t , B G A 4 3 0 , M a y 2 0 0 2 y BG A4 3 0 li m in ar Broad Band High Gain LNA P re MMIC Wireless Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2002-05-03 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
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D-81541
BGA430
100pF
BGA430
EHA07193
OT-363
b6hf marking
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CAP 0402
Abstract: GaAs FET amplifer mmic marking c8 GaAs FET amplifer chip CMH0819 VQFN-24 MMIC marking code 132 MMIC marking code 101 mmic code marking P 18 mmic c8
Text: GaAs MMIC CMH0819 • High-Linearity, Dual-Band LNA/Mixer IC for PCS use in CDMA and TDMA Mobile Phones Filter Ports • Integrated bypass switch for LNAs CDMA • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package LNA • LO Input power range: -7.0 to 0 dBm
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CMH0819
VQFN-24
CMH0819
CAP 0402
GaAs FET amplifer
mmic marking c8
GaAs FET amplifer chip
VQFN-24
MMIC marking code 132
MMIC marking code 101
mmic code marking P 18
mmic c8
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Untitled
Abstract: No abstract text available
Text: ;6 21 BGU8L1 SiGe:C Low Noise Amplifier MMIC for LTE Rev. 1 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description The BGU8L1 is a Low Noise Amplifier LNA for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGU8L1 requires one external
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Untitled
Abstract: No abstract text available
Text: ;6 21 BGU8M1 SiGe:C Low Noise Amplifier MMIC for LTE Rev. 1 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description The BGU8M1 is a Low Noise Amplifier LNA for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGU8M1 requires one external
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Untitled
Abstract: No abstract text available
Text: ASL033 5 ~ 4000 MHz MMIC Amplifier Features Description 14.6 dB Gain at 470 MHz 17 dBm P1dB at 470 MHz 18 dBm Output IP3 at 470 MHz 1.2 dB NF at 470 MHz MTTF > 100 Years Single Supply ASL033 is a one-stage LNA for mobile TV receiver
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ASL033
ASL033
OT363
OT363
OT-363
40x40
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Untitled
Abstract: No abstract text available
Text: ;6 21 BGU8H1 SiGe:C Low Noise Amplifier MMIC for LTE Rev. 1 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description The BGU8H1 is a Low Noise Amplifier LNA for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGU8H1 requires one external
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mmic c8
Abstract: mmic MIXER 210 CMH192 LNA marking A mmic code marking P 18 mmic marking code P 18 mmic code c8 mmic code c7 H-192 Q62705-K608
Text: GaAs MMIC CMH192 Datasheet • High-Linearity, PCS LNA/M ixer IC for use in US and Korean band CDM A Mobile Phones • Integrated bypass switch for LNA • G aAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SM T package • LO Input power range: -7.0 to 0 dBm
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CMH192
Q62705-K608
VQFN-20
10ability
CMH192
mmic c8
mmic MIXER 210
LNA marking A
mmic code marking P 18
mmic marking code P 18
mmic code c8
mmic code c7
H-192
Q62705-K608
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LNA ka-band
Abstract: MITSUBISHI CAPACITOR
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5109 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION The MGFC5109 is a GaAs MMIC chip especially designed for 27.0 ~ 30.0 GHz band
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MGFC5109
MGFC5109
LNA ka-band
MITSUBISHI CAPACITOR
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ka-band amplifier
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5110 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION The M GFC5110 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band
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MGFC5110
GFC5110
100pF
ka-band amplifier
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Vl02
Abstract: 9.75 GHz oscillator
Text: D a ta S h e e l ^ EiMhDIGICS Ku-Band DBS MMIC Downconverter ADVANCED PRODUCT INFORMATION Your GaAs ÍC Source _ REV 2 FUNCTIONAL i? ®! Integrated Monolithic Downconverter Covers both FSS & DBS Bands Band Switching Capability
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AKD2806
Vl02
9.75 GHz oscillator
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Untitled
Abstract: No abstract text available
Text: bEMSf lST DQlflD'lS 3^4 • MITSUBISHI SEMICONDUCTOR <GaAs MMIC MGF7134P -rv«s' « * * •« ate suW H ^ 2 ta m ^ wriW s""0” 1.90GHz BAND RX^X FRONT-END GaAs MMIC DESCRIPTION MGF7134P is a monolithic microwave integrated circuit for PHS OUTLINE DRAWING
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MGF7134P
90GHz
MGF7134P
55dBc
240MHz)
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5107 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5107 is a GaAs MMIC chip
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MGFC5107
MGFC5107
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5107 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5107 is a GaAs MMIC chip
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MGFC5107
MGFC5107
100pF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5108 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5108 is a GaAs MMIC chip
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MGFC5108
MGFC5108
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5109 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION BLOCK DIAGRAM TheM G FC 5109 is a GaAs MMIC chip
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MGFC5109
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5110 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Am plifier DESCRIPTION BLOCK DIAGRAM TheM G FC 5110 is a GaAs MMIC chip
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MGFC5110
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Untitled
Abstract: No abstract text available
Text: New Product Information TFE-1050 915 MHz to 2.4 GHz GaAs MMIC Transceiver Features: ♦ ♦ ♦ ♦ ♦ ♦ Half Duplex C onverter Fully Integrated RF Transceiver Functions 30 dB Transm it Conversion Gain 24 dBm Output Power at ±5v Application to U S/International 2.4 GHz Band
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TFE-1050
28-lead
TFE-1050
TKE-1050
25-pin
IVE1050
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MIL-STD-2015
Abstract: MAAM12022 MIL-STD-3015 MAAM22010 AM 12021 AM50-0002 m540 MMIC code D AM50-0001 DCS-1800
Text: A s fe m *A Application Note m an A M P com pany GaAs MMIC Low Noise Amplifiers SOIC-8 Platform M540 V 2.00 Introduction Early in 1994, M/A-COM began offering a family of plastic packaged GaAs MMIC low noise amplifiers LNAs featuring single positive supply voltage, low
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1500-MHz
1900-MHz
900-MHz
MIL-STD-2015
MAAM12022
MIL-STD-3015
MAAM22010
AM 12021
AM50-0002
m540
MMIC code D
AM50-0001
DCS-1800
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