Untitled
Abstract: No abstract text available
Text: EMM5838V1B Ka-Band Power Amplifier MMIC FEATURES • High Output Power: Pout=26.0dBm typ. • High Linear Gain: GL=25.0dB (typ.) • Frequency Band: 29.5 to 30.0GHz • Impedance Matched Zin/Zout=50ohm • Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION
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EMM5838V1B
50ohm
EMM5838V1B
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Untitled
Abstract: No abstract text available
Text: EMM5838V1B Ka-Band Power Amplifier MMIC FEATURES • High Output Power: Pout=26.0dBm typ. • High Linear Gain: GL=25.0dB (typ.) • Frequency Band: 29.5 to 30.0GHz • Impedance Matched Zin/Zout=50ohm • Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION
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EMM5838V1B
50ohm
EMM5838V1B
17fier
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SMM5845V1
Abstract: MMIC marking code U
Text: SMM5845V1B K-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=22.0dB (typ.) Broad Band:21.2 to 23.6GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The SMM5845V1B is a MMIC amplifier that contains a four-stage
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SMM5845V1B
50ohm
SMM5845V1B
SMM5845V1
MMIC marking code U
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CXM3592AUR-T9
Abstract: ic 8355 jammer gsm
Text: Ultra-High Linearity SPDT Switch CXM3592AUR Description The CXM3592AUR is a high power and ultra-high linearity SPDT switch for wireless communication systems. The CXM3592AUR can be used for SVLTE and carrier aggregation requiring very high linearity. This IC has a 1.8 V CMOS compatible decoder.
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CXM3592AUR
CXM3592AUR
IMT2000
CXM3592AUR-T9
Code875340755
Code875342695
ic 8355
jammer gsm
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EMM5068
Abstract: No abstract text available
Text: EMM5068VU X/Ku-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=26.0dB (typ.) Broad Band: 9.5 to 13.3GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5068VU is a MMIC amplifier that contains a three-stages
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EMM5068VU
50ohm
EMM5068VU
EMM5068
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Untitled
Abstract: No abstract text available
Text: SMM5845V1B K-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=22.0dB (typ.) ・Broad Band:21.2 to 23.6GHz ・Impedance Matched Zin/Zout=50ohm ・Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The SMM5845V1B is a MMIC amplifier that contains a four-stage
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SMM5845V1B
50ohm
SMM5845V1B
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ALPHA dpdt Switch
Abstract: antenna diversity switch 393MS8GE 6 pins dpdt switch dpdt rf switch 0607 50 ohm 2 ghz Antenna Antenna Diversity insertion loss microwave antenna 8 GHz mmic marking 255
Text: HMC393MS8G / 393MS8GE v04.0607 GaAs MMIC DPDT DIVERSITY SWITCH, 5 - 6 GHz Typical Applications Features This switch is ideal for use as a DPDT Diversity Switch for 5.0 - 6.0 GHz applications: Low Insertion Loss: 1.2 dB @ 5.5 GHz • HiperLAN Positive Control: 0/+5V
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HMC393MS8G
393MS8GE
HMC393MS8G
HMC393MS8GE
ALPHA dpdt Switch
antenna diversity switch
393MS8GE
6 pins dpdt switch
dpdt rf switch
0607
50 ohm 2 ghz Antenna
Antenna Diversity insertion loss
microwave antenna 8 GHz
mmic marking 255
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Untitled
Abstract: No abstract text available
Text: EMM5841V1B Ka-Band Power Amplifier MMIC FEATURES High Output Power: Pout=30.0dBm typ. Linear Gain: GL=15.0dB (typ.) Frequency Band: 29.5 to 30.0GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The EMM5841V1B is a MMIC amplifier that contains a threestages amplifier, internally matched, for standard communications
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EMM5841V1B
50ohm
EMM5841V1B
10fier
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Untitled
Abstract: No abstract text available
Text: SMM5085V1B Ku-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・Linear Gain: GL=25.0dB (typ.) ・Frequency Band: 12.7 to 15.4GHz ・Impedance Matched Zin/Zout=50ohm ・Integrated Power Detector ・Small Hermetic Metal-Ceramic SMT Package(V1B)
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SMM5085V1B
50ohm
SMM5085V1B
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Untitled
Abstract: No abstract text available
Text: Ultra-High Linearity SPDT Switch CXM3592AUR Description The CXM3592AUR is a high power and ultra-high linearity SPDT switch for wireless communication systems. The CXM3592AUR can be used for SVLTE and carrier aggregation requiring very high linearity. This IC has a 1.8 V CMOS compatible decoder.
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CXM3592AUR
CXM3592AUR
IMT2000
CXM3592AUR-T9
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Untitled
Abstract: No abstract text available
Text: HMC393MS8G / 393MS8GE v02.0805 GaAs MMIC DPDT DIVERSITY SWITCH, 5.0 - 6.0 GHz Typical Applications Features This switch is ideal for use as a DPDT Diversity Switch for 5.0 - 6.0 GHz applications: Low Insertion Loss: 1.2 dB @ 5.5 GHz • HiperLAN Positive Control: 0/+5V
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HMC393MS8G
393MS8GE
HMC393MS8G
HMC393MS8GE
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Untitled
Abstract: No abstract text available
Text: SMM5085V1B Ku-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. Linear Gain: GL=25.0dB (typ.) Frequency Band: 12.7 to 15.4GHz Impedance Matched Zin/Zout=50ohm Integrated Power Detector Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION
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SMM5085V1B
50ohm
SMM5085V1B
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Untitled
Abstract: No abstract text available
Text: EMM5836V1B K-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.5dBm typ. High Linear Gain: GL=27.0dB (typ.) Broad Band: 17.7 to 19.7GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The EMM5836V1B is a MMIC amplifier that contains a four-stages
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EMM5836V1B
50ohm
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EMM5074VU
Abstract: EMM5074
Text: EMM5074VU C-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33dBm typ. High Linear Gain: GL=27dB (typ.) Broad Band: 5.8 to 8.5GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5074VU is a wide band power amplifier MMIC that
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EMM5074VU
33dBm
50ohm
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EMM5074
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CXM3630UR
Abstract: CXM3630UR-T9 CXM363
Text: Ultra-High Linearity SPDT Switch CXM3630UR Description The CXM3630UR is a high power and ultra-high linearity SPDT switch for wireless communication systems. The CXM3630UR can be used for SVLTE and carrier aggregation requiring very high linearity. This IC has a 1.8 V CMOS compatible decoder.
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CXM3630UR
CXM3630UR
IMT2000
CXM3630UR-T9
Code875342170
Code875342701
CXM363
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Untitled
Abstract: No abstract text available
Text: HMC387MS8 / 387MS8E v02.0705 HIGH IP3 GaAs MMIC MIXER, 450 - 500 MHz Typical Applications Features High Dynamic Range Infrastructure: +32 dBm Input IP3 • GSM 450 & GSM 480 Conversion Loss: 9.5 dB • CDMA 450 Low External Part Count • Private Land Mobile Radio
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HMC387MS8
387MS8E
HMC387MS8
HMC387MS8E
17dBm.
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mmic marking 255
Abstract: HMC413QS16G HMC450QS16G HMC450QS16GE
Text: HMC450QS16G / 450QS16GE v01.0605 AMPLIFIERS - SMT 8 GaAs InGaP HBT MMIC POWER AMPLIFIER, 0.8 - 1.0 GHz Typical Applications Features The HMC450QS16G / HMC450QS16GE is ideal for power and driver amplifier applications: Gain: 26 dB • GSM, GPRS, & Edge +40 dBm Output IP3
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HMC450QS16G
450QS16GE
HMC450QS16GE
HMC450QS16G
HMC413QS16G
HMC450QS16GE
mmic marking 255
HMC413QS16G
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EMM5832VU
Abstract: No abstract text available
Text: EMM5832VU K-Band Power Amplifier MMIC FEATURES High Output Power: Pout=31.0dBm typ. High Linear Gain: GL=20.0dB (typ.) Broad Band: 21.2 to 26.5GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package (VU) DESCRIPTION The EMM5832VU is a MMIC amplifier that contains a four-stage
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Untitled
Abstract: No abstract text available
Text: EMM5836V1B K-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.5dBm typ. ・High Linear Gain: GL=27.0dB (typ.) ・Broad Band: 17.7 to 19.7GHz ・Impedance Matched Zin/Zout=50ohm ・Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION
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EMM5836V1B
50ohm
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mmic marking a22z
Abstract: A22cd SGA-2263Z
Text: SGA-2263Z Product Description DC-5000 MHz, Cascadable SiGe HBT MMIC Amplifier Sirenza Microdevices’ SGA-2263Z is a high performance SiGe HBT MMIC Amplifier housed in a low-cost, lead-free RoHS compliant surface-mount package. A Darlington configuration featuring 1 micron emitters provides high FT and excellent
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SGA-2263Z
EDS-103636
DC-5000
mmic marking a22z
A22cd
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HMC410MS8GE
Abstract: HMC410MS8G
Text: HMC410MS8G / 410MS8GE v02.0607 Typical Applications Features The HMC410MS8G / HMC410MS8GE is ideal for: Conversion Loss: 8 dB • Long Haul Radio Platforms LO/RF Isolation: 40 dB • Microwave Radio LO/IF Isolation: 37 dB • VSAT Input IP3: +24 dBm No External Components
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HMC410MS8G
410MS8GE
HMC410MS8GE
HMC410MS8G
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A34Z
Abstract: SGA-3463Z SGA3463Z rf mmic 26 SOT363 SGA-3463 18 sot-363 rf power amplifier SGA3463Z marking
Text: SGA-3463 SGA-3463Z Product Description The SGA-3463 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities
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SGA-3463
SGA-3463Z
SGA-3463
DC-5000
OT-363
EDS-100636
A34Z
SGA-3463Z
SGA3463Z
rf mmic 26 SOT363
18 sot-363 rf power amplifier
SGA3463Z marking
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DC-3500 MHz, Cascadable SiGe HBT MMIC Amplifier
Abstract: SGA-4263Z SGA-4263 marking 34 sot-363 rf GETEK FR4 34 sot-363 rf power amplifier SGA4263Z
Text: SGA-4263 Product Description SGA-4263Z The SGA-4263 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities
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SGA-4263
SGA-4263Z
SGA-4263
DC-3500
OT-363
EDS-100640
DC-3500 MHz, Cascadable SiGe HBT MMIC Amplifier
SGA-4263Z
marking 34 sot-363 rf
GETEK FR4
34 sot-363 rf power amplifier
SGA4263Z
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SGA-3363
Abstract: A33CB
Text: SGA-3363 Product Description DC-5500 MHz, Cascadable SiGe HBT MMIC Amplifier Sirenza Microdevices SGA-3363 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high F T and excellent thermal perfomance. The heterojunction increases breakdown
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SGA-3363
DC-5500
SGA-3363
EDS-100634
A33CB
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