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    MMIC CODE G Search Results

    MMIC CODE G Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    DM7842J/883 Rochester Electronics LLC DM7842J/883 - BCD/Decimal Visit Rochester Electronics LLC Buy
    9310FM Rochester Electronics LLC 9310 - BCD Decade Counter (Mil Temp) Visit Rochester Electronics LLC Buy
    54LS48J/B Rochester Electronics LLC 54LS48 - BCD-to-Seven-Segment Decoders Visit Rochester Electronics LLC Buy
    TLC32044IFK Rochester Electronics LLC PCM Codec, 1-Func, CMOS, CQCC28, CC-28 Visit Rochester Electronics LLC Buy

    MMIC CODE G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Reflow Soldering Guide

    Abstract: berex
    Text: BeRex Reflow Soldering Guide Application Note RF MMIC Innovator www.berex.com Classification: Reflow Soldering Document Number: Reflow61110 Revision code: 0.1 Reflow Soldering Guide for Surface Mount Devices Name Writer Date Signature BY KIM JH Bae OK Dr. Yoo


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    PDF Reflow61110 B61110 Reflow Soldering Guide berex

    smd MARKING CODE G72

    Abstract: No abstract text available
    Text: GaAs MMIC CGY 93P Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package


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    PDF MW-16 Q62702-G72 GPW05969 smd MARKING CODE G72

    amplifier 900mhz

    Abstract: amplifier siemens marking RF 98 CGY93P
    Text: CGY 93P GaAs MMIC Preliminary Data l l l Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped Package CGY 93P


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    PDF Q62702G72 amplifier 900mhz amplifier siemens marking RF 98 CGY93P

    93 ab chip

    Abstract: No abstract text available
    Text: GaAs MMIC CGY 93 Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package CGY 93


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    PDF MW-16 GPW05969 93 ab chip

    0918

    Abstract: amplifier siemens gsm signal amplifier marking gain stage GaAs MMIC AMPLIFIER DCS1800 Q62702G0077 CGY0918 CGY 8 pin
    Text: CGY 0918 GaAs MMIC l l l l Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package Power ramp control ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped


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    PDF 35dBm 34dBm Q62702G0077 0918 amplifier siemens gsm signal amplifier marking gain stage GaAs MMIC AMPLIFIER DCS1800 Q62702G0077 CGY0918 CGY 8 pin

    BGA310

    Abstract: Q62702-G0041
    Text: BGA310 Silicon Bipolar MMIC-Amplifier Preliminary Data l Cascadable 50 Ω-Gain Block l 9 dB typical Gain at 1.0 GHz l 9 dBm typical P at 1.0 GHz l 3 dB-Bandwidth: DC to 2.4 GHz l Plastic Package -1dB Type Marking BGA310 BLs Ordering Code 8-mm taped Q62702-G0041


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    PDF BGA310 Q62702-G0041 OT143 BGA310 Q62702-G0041

    BGA318

    Abstract: Q62702-G0043
    Text: BGA318 Silicon Bipolar MMIC-Amplifier Preliminary Data l Cascadable 50 Ω-Gain Block l 16 dB typical Gain at 1.0 GHz l 12 dBm typical P at 1.0 GHz l 3 dB-Bandwidth: DC to 1.2 GHz l Plastic Package -1dB Type Marking BGA318 BNs Ordering Code 8-mm taped Q62702-G0043


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    PDF BGA318 Q62702-G0043 OT143 BGA318 Q62702-G0043

    BGA312

    Abstract: Q62702-G0042 mmic-amplifier BMS 13-58 Type 01
    Text: BGA312 Silicon Bipolar MMIC-Amplifier Preliminary Data l Cascadable 50 Ω-Gain Block l 11 dB typical Gain at 1.0 GHz l 9 dBm typical P at 1.0 GHz l 3 dB-Bandwidth: DC to 2.0 GHz l Plastic Package -1dB Type Marking BGA312 BMs Ordering Code 8-mm taped Q62702-G0042


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    PDF BGA312 Q62702-G0042 OT143 BGA312 Q62702-G0042 mmic-amplifier BMS 13-58 Type 01

    Untitled

    Abstract: No abstract text available
    Text: EMM5838V1B Ka-Band Power Amplifier MMIC FEATURES • High Output Power: Pout=26.0dBm typ. • High Linear Gain: GL=25.0dB (typ.) • Frequency Band: 29.5 to 30.0GHz • Impedance Matched Zin/Zout=50ohm • Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION


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    PDF EMM5838V1B 50ohm EMM5838V1B

    Untitled

    Abstract: No abstract text available
    Text: EMM5838V1B Ka-Band Power Amplifier MMIC FEATURES • High Output Power: Pout=26.0dBm typ. • High Linear Gain: GL=25.0dB (typ.) • Frequency Band: 29.5 to 30.0GHz • Impedance Matched Zin/Zout=50ohm • Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION


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    PDF EMM5838V1B 50ohm EMM5838V1B 17fier

    SMM5845V1

    Abstract: MMIC marking code U
    Text: SMM5845V1B K-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=22.0dB (typ.) Broad Band:21.2 to 23.6GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The SMM5845V1B is a MMIC amplifier that contains a four-stage


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    PDF SMM5845V1B 50ohm SMM5845V1B SMM5845V1 MMIC marking code U

    EMM5068

    Abstract: No abstract text available
    Text: EMM5068VU X/Ku-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=26.0dB (typ.) Broad Band: 9.5 to 13.3GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5068VU is a MMIC amplifier that contains a three-stages


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    PDF EMM5068VU 50ohm EMM5068VU EMM5068

    Untitled

    Abstract: No abstract text available
    Text: SMM5085V1B Ku-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・Linear Gain: GL=25.0dB (typ.) ・Frequency Band: 12.7 to 15.4GHz ・Impedance Matched Zin/Zout=50ohm ・Integrated Power Detector ・Small Hermetic Metal-Ceramic SMT Package(V1B)


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    PDF SMM5085V1B 50ohm SMM5085V1B

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS CGY 93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped


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    PDF Q62702G72

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BGA318 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 i2-gain block • 16 dB typical gain at 1.0 GHz • 12 dBm typical P.-idB at 1.0 G • 3 dB-bandwidth: DC to 1.2 Gf RF IN o- Circuit Diagram EHA07312 Type Marking Ordering Code


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    PDF BGA318 EHA07312 Q62702-G0043 T-143

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS BGA310 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 il-G ain Block 9 dB typical Gain at 1.0 GHz 9 dBm typical P.1llB at 1.0 GHz 3 dB-Baridwidth: DC to 2.4 GHz Plastic Package Type Marking BGA310 BLs Ordering Code


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    PDF BGA310 Q62702-G0041 OT143

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BGA 312 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Q-gain block • 11 dB typical gain at 1.0 GHz • 9 dBm typical P.\ ¿b at 1 0 Gl• 3 dB-bandwidth: DC to 2.0 Gl RFINoCircuit Diagram EHA07312 Type Marking Ordering Code BGA 312 BMs


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    PDF EHA07312 Q62702-G0042 OT-143

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BGA310 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 i2-gain block • 9 dB typical gain at 1.0 GHz • 9 dBm typical P.-idB at 1 0 Gl • 3 dB-bandwidth: DC to 2.4 G RF IN o- Circuit Diagram EHA07312 Type Marking Ordering Code


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    PDF BGA310 Q62702-G0041 T-143

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BGA 318 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Q-gain block • 16 dB typical gain at 1.0 GHz • 12 dBm typical P_1db at 1.0 G • 3 dB-bandwidth: DC to 1.2 G\ R F IN o Circuit Diagram EHM 7312 Type Marking Ordering Code


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    PDF Q62702-G0043 OT-143 collect38

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BGA312 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 i2-gain block • 11 dB typical gain at 1.0 GHz • 9 dBm typical P.-idB at 1 0 Gl• 3 dB-bandwidth: DC to 2.0 Gl RF IN o- Circuit Diagram EHA07312 Type Marking Ordering Code


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    PDF BGA312 Q62702-G0042 T-143

    marking bms

    Abstract: No abstract text available
    Text: SIE M E N S BGA312 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 Q-Gain Block 11 dB typical Gain at 1.0 GHz 9 dBm typical P.1dB at 1.0 GHz 3 dB-8andwidth: DC to 2.0 GHz Plastic Package Type Marking Ordering Code 8-mm taped


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    PDF BGA312 Q62702-G0042 OT143 marking bms

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S BGA312 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 £2-Gain Block 11 dB typical Gain at 1.0 GHz 9 dBm typical P.1dB at 1.0 GHz 3 dB-Bandwidttv. DC to 2.0 GHz Plastic Package Type Marking BGA312 BMs Ordering Code


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    PDF BGA312 Q62702-G0042 OT143 te010 DDTDS33

    Untitled

    Abstract: No abstract text available
    Text: SIE M E N S BGA318 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 Q-Gain Block 16 dB typical Gain at 1.0 GH2 12 dBm typical P.1dB at 1.0 GHz 3 dB-Bandwidth: DC to 1.2 GHz Plastic Package Type Marking Ordering Code 8-mm taped


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    PDF BGA318 Q62702-G0043 OT143

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BGA 310 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 £2-gain block • 9 dB typical gain at 1.0 GHz • 9 dBm typical P.-idB at 1-0 ^ z • 3 dB-bandwidth: DC to 2.4 G Iz I" RF IN o- Circuit Diagram Type u Marking Ordering Code


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    PDF EHA07312 Q62702-G0041 OT-143